JPH01283976A - Josephson transistor - Google Patents
Josephson transistorInfo
- Publication number
- JPH01283976A JPH01283976A JP63115233A JP11523388A JPH01283976A JP H01283976 A JPH01283976 A JP H01283976A JP 63115233 A JP63115233 A JP 63115233A JP 11523388 A JP11523388 A JP 11523388A JP H01283976 A JPH01283976 A JP H01283976A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- transistor
- josephson
- film
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005668 Josephson effect Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 229920001940 conductive polymer Polymers 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はジョセフソン効果を用いたトランジスタ構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a transistor structure using the Josephson effect.
従来ジョセフソン効果素子としてはトンネル・ダイオー
ドと呼称されている如く、２極素子は有ったがトランジ
スタすなわち３極素子は無かった。Conventional Josephson effect elements include bipolar elements, such as tunnel diodes, but not transistors, ie, tripolar elements.
［発明が解決しようとする課題］
しかし、上記従来技術によると、ダイオードのみでは集
積回路を組み難いと云う課題が有った。[Problem to be Solved by the Invention] However, the above-mentioned conventional technology has a problem in that it is difficult to assemble an integrated circuit using only diodes.
本発明は、かかる従来技術の課題を解決するために、ジ
ョセフソン効果を用いた新らしいトランジスタ構造を提
供する事を目的とする。An object of the present invention is to provide a new transistor structure using the Josephson effect in order to solve the problems of the prior art.
上記課題を解決するために、本発明はジョセフソン ト
ランジスタに係り、第１の電極と第２の電極間には第１
のトンネル膜を形成し、前記第２の電極と第３の電極間
には第２のトンネル膜を形成する手段を取る事を基本と
する。In order to solve the above problems, the present invention relates to a Josephson transistor, in which a first electrode is connected between a first electrode and a second electrode.
Basically, a means is taken to form a second tunnel film between the second electrode and the third electrode.
［作 用］
前記手段を用いる事により、例へば第１の電極をエミッ
タとし、第２の電極をベースとし、第３の電極をコレク
タとしたトランジスタ作用を現出させる事ができる。[Function] By using the above-mentioned means, for example, a transistor effect can be realized in which the first electrode is used as an emitter, the second electrode is used as a base, and the third electrode is used as a collector.
［実 施 例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す基本的なジョセフソン
トランジスタの断面図である。すなわち、ガラス等か
ら成る基板１の表面には、ＮｂＮやＡＪ２等から成る第
１の電極２、第２の電極３及び第３の電極４が形成され
、これら第１の電極２と第２の電極３の間、及び第２の
電極３と第３の電極４との間にはＳ ｉ ＯｚやＳｉ、
Ｎ４やＡ４２゜０３あるいはＮｂＯ等から成る第１のト
ンネル膜５と第２のトンネル膜６とが形成されて成り、
前記第１の電極をエミッタ７、第２の電極３をベース８
、第３の電極４をコレクタ９としたトランジスタ構造が
形成されて成る。尚、第１の電極２、第２の電極３及び
第３の電極４の材料としては導電性高分子体やセラミッ
ク系高温超電導体あるいは金属合金や導電性の窒化物等
であっても良く、又、それらの組み合わせであっても良
い、又、第１のトンネル膜及び第２のトンネル膜は絶縁
性高分子体であっても良く、第２の電極３は半導体であ
っても良い。FIG. 1 is a cross-sectional view of a basic Josephson transistor illustrating one embodiment of the present invention. That is, a first electrode 2, a second electrode 3, and a third electrode 4 made of NbN, AJ2, etc. are formed on the surface of a substrate 1 made of glass or the like. Between the electrodes 3 and between the second electrode 3 and the third electrode 4, SiOz, Si,
A first tunnel film 5 and a second tunnel film 6 made of N4, A42°03, NbO, etc. are formed,
The first electrode is an emitter 7, and the second electrode 3 is a base 8.
, a transistor structure is formed in which the third electrode 4 is the collector 9. The materials for the first electrode 2, second electrode 3, and third electrode 4 may be conductive polymers, ceramic-based high-temperature superconductors, metal alloys, conductive nitrides, etc. Alternatively, a combination thereof may be used, the first tunnel film and the second tunnel film may be made of an insulating polymer, and the second electrode 3 may be made of a semiconductor.
第２図は本発明の他の実施例であり、ラテラルジョセフ
ソン トランジスタの断面図である。FIG. 2 is another embodiment of the present invention, which is a cross-sectional view of a lateral Josephson transistor.
すなわち、基板１１の表面には、第１の電極１２及び第
３の電極１４が形成され、該第１の電極１２及び第３の
電極１４上には、ＣＶＤ法等によりＳｉＯ□等から成る
厚い絶縁膜２０と、それらの側面に第１のトンネル膜１
５及び第２のトンネル膜１６を形成し、これらトンネル
膜と絶縁膜上には、第２の電極１３が形成され、前記第
１の電極１２をエミッタ１７、第２の電極１３をベース
、第３の電極１４をコレクタとしたラテラル ジョセフ
ソン トランジスタが形成されて成る。That is, a first electrode 12 and a third electrode 14 are formed on the surface of the substrate 11, and a thick layer made of SiO□ or the like is formed on the first electrode 12 and third electrode 14 by a CVD method or the like. An insulating film 20 and a first tunnel film 1 on the side surfaces thereof.
5 and a second tunnel film 16 are formed, and a second electrode 13 is formed on these tunnel films and an insulating film. A lateral Josephson transistor is formed with the electrode 14 of No. 3 as a collector.
第３図は本発明の他の実施例であるラテラルホリゾンタ
ル ジョセフソン トランジスタの断面図である。すな
わち、基板２１の表面には第１の電極２２及び第３の電
極２４が形成され、該第１の電極２２と第３の電極２４
間は絶縁１ｌ１３０にて埋め込まれて成ると共に、それ
らの表面に第１のトンネルｌｌＩ２５及び第２のトンネ
ル１１！２６を形成し、これらトンネル膜と絶縁膜上に
は第２の電極２３が形成され、前記第１の電極２２をエ
ミッタ２７、第２の電極２３をベース、第３の電極２４
をコレクタとした、ラテラル ホリゾンクルジョセフソ
ン トランジスタが形成されて成る。FIG. 3 is a cross-sectional view of a lateral horizontal Josephson transistor according to another embodiment of the present invention. That is, a first electrode 22 and a third electrode 24 are formed on the surface of the substrate 21, and the first electrode 22 and the third electrode 24
The space between the two tunnels is filled with an insulating film 1130, and a first tunnel llI25 and a second tunnel 11!26 are formed on their surfaces, and a second electrode 23 is formed on these tunnel films and the insulating film. , the first electrode 22 is an emitter 27, the second electrode 23 is a base, and the third electrode 24 is
A lateral horizontal Josephson transistor is formed with the collector as the collector.
第４図は本発明のその他の実施例を示す分子ジョセフソ
ン トランジスタの分子構造である。すなわち、Ｇａフ
タロシアニユンとＮｉフタロシアニユンの積層により、
金属原子に達らなった、導電性高分子鎖（ＳＮ） 、、
をベース３２とし、ＧａフタロシアニユンのリングＡに
連らなったアルキルシアン基（Ｎ＝（、：Ｒ）をトンネ
ル膜として、該アルキルシアン基に連らなった導電性高
分子鎖（ＳＮ） 。をエミッタ３１及びコレクタ３３
となした分子レベルでジョセフソン トランジスタが構
成されて成る。FIG. 4 is a molecular structure of a molecular Josephson transistor showing another embodiment of the present invention. That is, by laminating Ga phthalocyaninyune and Ni phthalocyaninyune,
Conductive polymer chains (SN) that do not reach metal atoms.
is the base 32, and an alkyl cyan group (N=(,:R) is used as a tunnel film to form a conductive polymer chain (SN) connected to the alkyl cyan group. Emitter 31 and collector 33
A Josephson transistor is constructed at the molecular level.
［発明の効果］
本発明によりジョセフソン効果を用いたトランジスタが
容易に形成出来、高速で低消費電力且つ高集積のジョセ
フソン集積回路装置を製作する事ができる効果がある。[Effects of the Invention] According to the present invention, a transistor using the Josephson effect can be easily formed, and a Josephson integrated circuit device with high speed, low power consumption, and high integration can be manufactured.
第１図は本発明の一実施例を示すジョセフソントランジ
スタの断面図、第２図は本発明の他の実施例を示すラテ
ラル ジョセフソン トランジスタの断面図、第３図は
本発明の他の実施例を示すラテラル ホリゾンタル ジ
ョセフソン トランジスタの断面図、第４図（ａ）、（
ｂ）は本発明のその他の実施例を示す分子ジョセフソン
トランジスタの分子構造図である。
１．１１．２１・・・・・基板
２．１２．２２・・・・・第１の電極
３．１３．２３・・・・・第２の電極
４．１４．２４・・・・・第３の電極
５．１５．２５・・・・・第１のトンネル膜６．１６．
２６・・・・・第２のトンネル膜７．１７．２７．３１
・・エミッタ
８．１８．２８．３２・・ベース
９．１９．２９．３３・・コレクタ
２０・・・・・・・・・・絶縁膜
第１０
多９２目
溶３に１FIG. 1 is a sectional view of a Josephson transistor showing one embodiment of the invention, FIG. 2 is a sectional view of a lateral Josephson transistor showing another embodiment of the invention, and FIG. 3 is a sectional view of another embodiment of the invention. Cross-sectional view of a lateral horizontal Josephson transistor showing an example, Figure 4(a), (
b) is a molecular structure diagram of a molecular Josephson transistor showing another embodiment of the present invention. 1.11.21... Substrate 2.12.22... First electrode 3.13.23... Second electrode 4.14.24... Number No. 3 electrode 5.15.25...first tunnel film 6.16.
26...Second tunnel film 7.17.27.31
・・Emitter 8.18.28.32・・・Base 9.19.29.33・・Collector 20・・・Insulating film 10th 92nd layer 3 to 1
Claims (1)
成され、前記第２の電極と第３の電極間には第２のトン
ネル膜が形成されて成る事を特徴とするジョセフソント
ランジスタ。A first tunnel film is formed between the first electrode and the second electrode, and a second tunnel film is formed between the second electrode and the third electrode. Son transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115233A JPH01283976A (en) | 1988-05-11 | 1988-05-11 | Josephson transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115233A JPH01283976A (en) | 1988-05-11 | 1988-05-11 | Josephson transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283976A true JPH01283976A (en) | 1989-11-15 |
Family
ID=14657643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63115233A Pending JPH01283976A (en) | 1988-05-11 | 1988-05-11 | Josephson transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283976A (en) |
-
1988
- 1988-05-11 JP JP63115233A patent/JPH01283976A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1092726A (en) | Structure and fabrication method for integrated circuits with polysilicon lines having low sheet resistance | |
| EP0029099A3 (en) | Semiconductor memory device | |
| KR900001394B1 (en) | Super high frequency intergrated circuit device | |
| KR840002162A (en) | Semiconductor device | |
| KR890007433A (en) | Semiconductor device having bipolar transistor and manufacturing method thereof | |
| MY104983A (en) | Vertical bipolar transistor. | |
| JPH01283976A (en) | Josephson transistor | |
| KR840005930A (en) | Semiconductor device | |
| JPS6477961A (en) | Manufacture of semiconductor device | |
| JPS6425551A (en) | Semiconductor device | |
| JPH04370978A (en) | Quantum-effect type field-effect transistor | |
| EP0391420A3 (en) | Radiation resistant semiconductor structure | |
| JPS6436065A (en) | Bipolar type semiconductor device | |
| JPH02230778A (en) | Tunnel effect element | |
| JPH01283977A (en) | Josephson transistor | |
| JPS5348680A (en) | Semiconductor device | |
| JPS6459954A (en) | Semiconductor integrated circuit | |
| JPS57210659A (en) | Semiconductor device | |
| JPS6419759A (en) | Semiconductor integrated circuit | |
| JPS649657A (en) | Junction transistor | |
| JPS6411349A (en) | Semiconductor device | |
| JPS6466979A (en) | Superconducting transistor | |
| JPS5673460A (en) | Semiconductor integrated circuit | |
| JPS5769784A (en) | Manufacture of semiconductor light emitting device | |
| JPS56118365A (en) | Semiconductor device |