JPS6436065A - Bipolar type semiconductor device - Google Patents
Bipolar type semiconductor deviceInfo
- Publication number
- JPS6436065A JPS6436065A JP62190086A JP19008687A JPS6436065A JP S6436065 A JPS6436065 A JP S6436065A JP 62190086 A JP62190086 A JP 62190086A JP 19008687 A JP19008687 A JP 19008687A JP S6436065 A JPS6436065 A JP S6436065A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- isolation regions
- finess
- inter
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To repair defective writing and to realize finess of an element and to improve reliability in wiring by flattening, by burying an insulating substance and polycrystalline silicon held in insulation and the like into grooves formed in a semiconductor substrate. CONSTITUTION:In a structure of grooves composing element isolation regions 4 and inter-cell isolation regions 8, insulation films 4a and 8a such as oxide films are formed respectively on inner surfaces of the grooves, and spaces formed between the grooves are filled with polycrystalline silicon materials 4b and 8b. When element isolation regions in a bipolar transistor or the like are composed of deep grooves 4 and the inter-cell isolation regions are composed of grooves 8 smaller in depth than the grooves 4, widthwise spreading of the isolation regions can be reduced to realize finess of the element. These grooves 4 and 8 can be formed sufficiently deep compared with depth of impurities in the elements and the cells, dispersion in breakdown strength and bit interference due to a parasitic pnpn between the cells can be prevented to make good writing possible. Further flatness on the isolation region can be realized, and aluminum wirings or the like can be prevented from being disconnected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62190086A JPS6436065A (en) | 1987-07-31 | 1987-07-31 | Bipolar type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62190086A JPS6436065A (en) | 1987-07-31 | 1987-07-31 | Bipolar type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6436065A true JPS6436065A (en) | 1989-02-07 |
Family
ID=16252133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62190086A Pending JPS6436065A (en) | 1987-07-31 | 1987-07-31 | Bipolar type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6436065A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614445A (en) * | 1991-04-02 | 1997-03-25 | Fuji Electric Co., Ltd. | Method of dicing semiconductor wafer |
| EP0823736A2 (en) * | 1996-08-05 | 1998-02-11 | Sifu Hu | Vertical bipolar transistor and method of manufacturing the same |
-
1987
- 1987-07-31 JP JP62190086A patent/JPS6436065A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614445A (en) * | 1991-04-02 | 1997-03-25 | Fuji Electric Co., Ltd. | Method of dicing semiconductor wafer |
| EP0823736A2 (en) * | 1996-08-05 | 1998-02-11 | Sifu Hu | Vertical bipolar transistor and method of manufacturing the same |
| EP0823736A3 (en) * | 1996-08-05 | 1999-07-21 | Sifu Hu | Vertical bipolar transistor and method of manufacturing the same |
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