JPH01276772A - Contact type image sensor - Google Patents
Contact type image sensorInfo
- Publication number
- JPH01276772A JPH01276772A JP63106383A JP10638388A JPH01276772A JP H01276772 A JPH01276772 A JP H01276772A JP 63106383 A JP63106383 A JP 63106383A JP 10638388 A JP10638388 A JP 10638388A JP H01276772 A JPH01276772 A JP H01276772A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- semiconductor image
- chip
- lead
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920001721 polyimide Polymers 0.000 abstract description 5
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical group C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ファクシミリやデジタル複写機などの画像入
力装置に用いられる密着型イメージセンサに関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a contact image sensor used in image input devices such as facsimiles and digital copying machines.
従来の技術
ファクシミリやデジタル複写機などの画像入力装置に用
いられる密着型イメージセンサには、ＣＯＤ 、ＭＯＳ
、バイポーラＩＣ型センサ等の単結晶シリコンからな
る半導体イメージセンサチップを用いるものと、アモル
ファスシリコンやＣｄ５−５ｅ等の半導体薄膜を用いた
ものがある。従来半導体イメージセンサチップを用いた
密着型イメージセンサは、第３図及び第４図に示すよう
にアルミナやガラス等の基板１の表面に金や銀−白金な
どの貴金属により所望する回路導体層２を形成した回路
基板上に、ＣＯＤ 、ＭＯＳ 、バイポーラＩＣ型セン
サ等の単結晶シリコンからなる半導体イメージセンサチ
ップ３を複数個直線状に高精度に配列してエポキシ系や
シアノアクリレート系の導電性接着剤４により回路基板
上に接着固・定し、ダイボンド後者半導体イメージセン
サチップ３の電極端子と回路導体層２とをワイヤーボン
ド法により金やアルミニウムなどの金属細線６で接続し
、しかる後カバーガラス６を被せて対土用接着剤７で固
定するハーメチック封止構造を有したセンサ基板をクリ
ップ端子で電気回路部品実装済プリント基板とを電気的
に接続していた。Conventional technology Contact image sensors used in image input devices such as facsimiles and digital copiers include COD and MOS.
There are those using a semiconductor image sensor chip made of single crystal silicon, such as a bipolar IC type sensor, and those using a semiconductor thin film such as amorphous silicon or Cd5-5e. Conventionally, a contact image sensor using a semiconductor image sensor chip has a circuit conductor layer 2 formed of a noble metal such as gold or silver-platinum on the surface of a substrate 1 made of alumina or glass, as shown in FIGS. 3 and 4. A plurality of semiconductor image sensor chips 3 made of single-crystal silicon such as COD, MOS, and bipolar IC type sensors are arranged in a straight line with high precision on the circuit board formed with epoxy or cyanoacrylate conductive adhesive. The electrode terminals of the die-bonded semiconductor image sensor chip 3 and the circuit conductor layer 2 are connected with thin metal wires 6 made of gold, aluminum, etc. by the wire bonding method, and then the cover glass is attached. A sensor board having a hermetic sealing structure in which a sensor board 6 is covered and fixed with a ground adhesive 7 is electrically connected to a printed circuit board on which electric circuit components are mounted using a clip terminal.
発明が解決しようとする課題
しかしながら、このような密着型イメージセンサでは、
薄型化がはかりにくいことや、機械的衝撃に対する電気
的接続の信頼性及び耐湿性などの信頼性に乏しいなどの
問題点があった。また半導体イメージセンサチップ３の
修正が困難であるために工程歩留まりが悪く経済性に欠
けたり、カバーガラス６が成形品であったジ基板１に回
路導体層２を形成しなければならず、そのため部品材料
が高価でコストの面でも問題点があった。本発明は、こ
のような問題点を解決するものであり、薄型で信頼性に
優れ、且つ組み立ての歩留まりを向上させて経済性に優
れた密着型イメージセンサを提供するものである。Problems to be Solved by the Invention However, in such a close-contact image sensor,
There are problems in that it is difficult to reduce the thickness, and reliability in electrical connection against mechanical shock and moisture resistance is poor. In addition, since it is difficult to modify the semiconductor image sensor chip 3, the process yield is low and economic efficiency is poor, and the circuit conductor layer 2 must be formed on the di-substrate 1 where the cover glass 6 is a molded product. There was also a problem in terms of cost because the parts materials were expensive. The present invention solves these problems and provides a contact image sensor that is thin, highly reliable, and has an improved assembly yield and is highly economical.
課題を解決するだめの手段
上記課題を解決するために本発明の密着型イメージセン
サは、透光性基板上に半導体イメージセンサチップをフ
ェースダウンで複数個直線状に透光性接着剤で接着固定
し、半導体イメージセンサチップと電気回路部品実装済
プリント基板をフィルムリードで電気的に接続した構造
を有するものである。Means for Solving the Problems In order to solve the above problems, the contact image sensor of the present invention consists of adhesively fixing a plurality of semiconductor image sensor chips face down on a transparent substrate in a straight line with a transparent adhesive. However, it has a structure in which a semiconductor image sensor chip and a printed circuit board with electrical circuit components mounted thereon are electrically connected by film leads.
作用
上記本発明の構造を用いることにより、構造的に薄型で
且つ電気的接続や耐湿度性などの信頼性に優れ、さらに
は組み立ての歩留まりが向上し低コストの密着型イメー
ジセンサが実現できる。Effects By using the structure of the present invention described above, it is possible to realize a contact type image sensor that is structurally thin and has excellent reliability in terms of electrical connection and moisture resistance, and further improves the assembly yield and is low in cost.
実施例
以下、本発明の一実施例を図面を参照しながら説明する
。第１図は、本発明の一実施例における密着イメージセ
ンサの斜視図、第２図はその要部断面図である。第１図
、第２図において１１は透光性基板、１２は半導体イメ
ージセンサチップ、１３は透光性接着剤、１４はポリイ
ミドフィルム、１６はポリイミドフィルム１４を支持基
板にしたフィルムリード、１６はバンプ、１７は電気回
路部品実装済プリント基板である。以下第１図、第２図
に基づいて詳細に述べる。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a contact image sensor according to an embodiment of the present invention, and FIG. 2 is a sectional view of a main part thereof. 1 and 2, 11 is a transparent substrate, 12 is a semiconductor image sensor chip, 13 is a transparent adhesive, 14 is a polyimide film, 16 is a film lead using the polyimide film 14 as a supporting substrate, 16 is a Bump 17 is a printed circuit board on which electric circuit components are mounted. A detailed description will be given below based on FIGS. 1 and 2.
（実施例１）
半導体プロセスを用いて単結晶シリコン基板上に、フォ
トトランジスタやフォトダイオード等の光検知素子アレ
ーとＭＯＳやＣＬＯＤ 、バイポーラＩＣ等のスイッチ
ング素子等で構成した半導体イメージセンサの電極端子
上にバリヤー金属としてＣｒ 、 Ｔｉ 、 Ｐｄ等を
形成し、その上にＣｕ 、 Ａｕ 。(Example 1) On the electrode terminal of a semiconductor image sensor, which is constructed using a semiconductor process on a single crystal silicon substrate, and is composed of a photodetecting element array such as a phototransistor or a photodiode, and a switching element such as a MOS, CLOD, or bipolar IC. Cr, Ti, Pd, etc. are formed as barrier metals on top of which Cu, Au are formed.
Ｉｎ等を蒸着法やメツキ法でバンプ１６を作成し、この
単結晶シリコン基板から高精度ダイシング技術を駆使し
て切断加工することにより半導体イメージセンサチップ
１２を作成する。次にポリイミドフィルム１４上に所望
する銅箔パターンを３５μｍの膜厚で形成したフィルム
リード１５へＱ、５μｍの膜厚でＳｎメツキ処理を施し
てフィルムキャリアを作成し、半導体イメージセンサチ
ップ１２の電極端子上のバンプ１６とフィルムリード１
５をツールでボンディング圧力０．０５〜２．５に９゜
ヒートタイム１〜３ ｓｅｃ ＊ボンディング温度１０
０〜６０Ｑ℃の条件でインナーボンディングし半導体イ
メージセンサチップ１２とフィルムリード１５を電気的
に接続する。ついでガラス基板等の透光性基板１１上の
所定の位置にシリコーン系。The bumps 16 are created using In or the like by vapor deposition or plating, and the semiconductor image sensor chip 12 is created by cutting the single crystal silicon substrate using high-precision dicing technology. Next, film leads 15 with a desired copper foil pattern formed on the polyimide film 14 with a film thickness of 35 μm are subjected to Sn plating treatment with a film thickness of 5 μm to create a film carrier, and electrodes of the semiconductor image sensor chip 12 are formed. Bump 16 on the terminal and film lead 1
5 with a tool to a bonding pressure of 0.05 to 2.5 at 9° heat time 1 to 3 seconds *Bonding temperature 10
The semiconductor image sensor chip 12 and the film lead 15 are electrically connected by inner bonding at a temperature of 0 to 60Q°C. Next, silicone is applied to a predetermined position on a transparent substrate 11 such as a glass substrate.
アクリル系、エポキシ系で紫外線硬化型、熱硬化型、紫
外線硬化と熱硬化併用型の透光性接着剤１３をスクリー
ン印刷やデイスペンサー等で所定の膜厚だけ塗布し、そ
の上にフィルムリード付半導体イメージセンサチップ１
２をフェースダウンで複数個直線状に配列した後、フィ
ルムリード１５と電気回路部品実装済プリント基板用１
７の電極端子をアウタリードボンディング法で、ボンデ
ィング温度１００〜５００℃、ボンディング圧力。、０
５〜２．５に９．ヒートタイム１〜３ｓｅｃの条件で接
続する。その後、紫外線照射または加熱して透光性接着
剤１３を硬化し、半導体イメージセンサチップ１２と透
光性基板１１を接着固定して密着型イメージセンサを作
成する。Apply a transparent adhesive 13 of acrylic or epoxy type, ultraviolet curing type, thermosetting type, or combination of ultraviolet curing and thermosetting type, to a predetermined thickness using screen printing or a dispenser, and attach a film lead on top of it. Semiconductor image sensor chip 1
After arranging a plurality of 2 in a straight line face down, film lead 15 and printed circuit board 1 with electrical circuit components mounted
The electrode terminal No. 7 was bonded using the outer lead bonding method at a bonding temperature of 100 to 500°C and a bonding pressure. ,0
5 to 2.5 to 9. Connect under the condition of heat time of 1 to 3 seconds. Thereafter, the transparent adhesive 13 is cured by ultraviolet irradiation or heating, and the semiconductor image sensor chip 12 and the transparent substrate 11 are bonded and fixed to create a contact type image sensor.
（実施例２）
実施例１において半導体イメージセンサチップ１２の電
極端子上のバンプ材料としてＰｄ−６％Ｓｎノハンタハ
ンブ１６を用いてフィルムＩＪ−）”１５と密着・加熱
して電気的に接続を行って密着型イメージセンサを構成
した。(Example 2) In Example 1, Pd-6%Sn Nohantahanb 16 was used as the bump material on the electrode terminal of the semiconductor image sensor chip 12, and electrical connection was made by closely contacting and heating the film IJ-15. A contact-type image sensor was constructed.
（実施例３）
実施例１において半導体イメージセンサチップ１２の電
極端子とフィルムリード１５間にあるパンブ１６を転写
バンブ方式によりフィルムリード１６上に形成して密着
型イメージセンサを構成した。(Example 3) In Example 1, the bump 16 between the electrode terminal of the semiconductor image sensor chip 12 and the film lead 15 was formed on the film lead 16 by the transfer bump method to construct a contact type image sensor.
以上実施例１〜３ではアウターリードボンディング法で
ボンディングした後、透光性接着剤１３を硬化させたが
、先に半導体イメージセンサチップ１２と透光性基板１
１硬化・接着・固定させた後アウターリードボンディン
グを行ってもよい。In Examples 1 to 3, the transparent adhesive 13 was cured after bonding by the outer lead bonding method, but the semiconductor image sensor chip 12 and the transparent substrate 1 were first bonded.
1. After curing, adhesion, and fixing, outer lead bonding may be performed.
また信頼性向上及び機械的ダメージ防止の目的で半導体
イメージセンサチップ１２の表面をエポキシ系やシリコ
ーン系、アクリル系の接着剤でモールドすると効果的で
ある。Furthermore, for the purpose of improving reliability and preventing mechanical damage, it is effective to mold the surface of the semiconductor image sensor chip 12 with an epoxy, silicone, or acrylic adhesive.
発明の効果
以上のように本発明によれば、透光性基板上に半導体イ
メージセンサチップをフェースダウンで複数個直線状に
透光性接着剤で接着・固定し、半導体イメージセンサチ
ップと電気回路部品実装済プリント基板をフィルムリー
ドで電気的に接続した構造を有するために、基板に回路
導体層を形成しなくて済みまたカバーガラスがなくなり
薄型で材料費が下がる。また透光性接着剤や樹脂で半導
体イメージセンサチップをモールドしているために機械
的振動に強く、電気的接続や耐湿性などの信頼性が向上
する。さらに透光性接着剤（ｉ−硬化させる前に電気的
にチエツクできるために半導体イメージセンサチップの
修正が容易であり、したがって組み立て歩留まりが向上
し低コストで作成できるという効果がある。Effects of the Invention As described above, according to the present invention, a plurality of semiconductor image sensor chips are bonded and fixed in a straight line with a light-transmitting adhesive face down on a light-transmitting substrate, and the semiconductor image sensor chips and an electric circuit are bonded together. Since it has a structure in which a printed circuit board with mounted components is electrically connected with a film lead, there is no need to form a circuit conductor layer on the board, and there is no need for a cover glass, resulting in a thinner structure and lower material costs. Additionally, since the semiconductor image sensor chip is molded with a translucent adhesive or resin, it is resistant to mechanical vibrations and has improved reliability in terms of electrical connections and moisture resistance. Furthermore, since the translucent adhesive (i-) can be electrically checked before being cured, it is easy to modify the semiconductor image sensor chip, which improves the assembly yield and can be manufactured at low cost.
第１図は本発明の実施例における密着イメージセンサの
斜視図、第２図はその断面図、第３図は従来の密着イメ
ージセンサの斜視図、第４図はその断面図である。
１１・・・・・・透光性基板、１２・・・・・・半導体
イメージセンサチップ、１３・・・・・・透光性接着剤
、１４・・・・・・ポリイミドフィルム、１５・・・・
・・フィルムリード、１６・・・・・・バンプ、１ア・
・・・・・電気回路部品実装済プリント基板。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ノソ
ノｒ＋へ孜
第３図FIG. 1 is a perspective view of a contact image sensor according to an embodiment of the present invention, FIG. 2 is a sectional view thereof, FIG. 3 is a perspective view of a conventional contact image sensor, and FIG. 4 is a sectional view thereof. 11... Transparent substrate, 12... Semiconductor image sensor chip, 13... Transparent adhesive, 14... Polyimide film, 15...・・・
...Film lead, 16...Bump, 1A...
...Printed circuit board with electrical circuit components mounted. Name of agent: Patent attorney Toshio Nakao and one other person
Claims (1)
スダウンで複数個直線状に透光性接着剤で接着固定し、
前記半導体イメージセンサチップと電気回路部品実装済
プリント基板をフィルムリードで電気的に接続した密着
型イメージセンサ。Multiple semiconductor image sensor chips are glued and fixed in a straight line face down on a transparent substrate using a transparent adhesive.
A close-contact image sensor in which the semiconductor image sensor chip and a printed circuit board on which electric circuit components are mounted are electrically connected by a film lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63106383A JPH0719895B2 (en) | 1988-04-28 | 1988-04-28 | Contact image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63106383A JPH0719895B2 (en) | 1988-04-28 | 1988-04-28 | Contact image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01276772A true JPH01276772A (en) | 1989-11-07 |
| JPH0719895B2 JPH0719895B2 (en) | 1995-03-06 |
Family
ID=14432184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63106383A Expired - Lifetime JPH0719895B2 (en) | 1988-04-28 | 1988-04-28 | Contact image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719895B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008219854A (en) * | 2007-02-05 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Optical device, optical device wafer, method for manufacturing them, and camera module and endoscope module equipped with optical device |
| US8455902B2 (en) | 2007-02-05 | 2013-06-04 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
-
1988
- 1988-04-28 JP JP63106383A patent/JPH0719895B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008219854A (en) * | 2007-02-05 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Optical device, optical device wafer, method for manufacturing them, and camera module and endoscope module equipped with optical device |
| US8455902B2 (en) | 2007-02-05 | 2013-06-04 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0719895B2 (en) | 1995-03-06 |
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