JPH01260842A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH01260842A
JPH01260842A JP8941588A JP8941588A JPH01260842A JP H01260842 A JPH01260842 A JP H01260842A JP 8941588 A JP8941588 A JP 8941588A JP 8941588 A JP8941588 A JP 8941588A JP H01260842 A JPH01260842 A JP H01260842A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
junction
signal wiring
type
capacitor
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8941588A
Inventor
Yutaka Arita
Yoichi Hida
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To decrease the capacitance value of a parasitic capacitor of a signal wiring, by providing a p-n junction in a semiconductor substrate beneath the signal wiring.
CONSTITUTION: A p-type island 5 is provided in the surface region of an n-type semiconductor substrate 1 beneath a signal wiring 3 through an insulating film 2. The p-type island 5 incorporates p-type low-concentration impurities. A p-n junction is provided with the island 5 and n-type silicon substrate 1. In this constitution, a parasitic capacitor C1 between the signal wiring 3 and the p-type island 5 is connected in series with a capacitor C2 formed with the p-n junction between the p-type island 5 and the n-type semiconductor substrate 1. The capacitor C2 is a junction capacitor which is formed with a depletion region at the p-n junction part. The value of the junction capacitance depends on a junction area 52 and a thickness d2 of the depletion layer. Since the p-n junction capacitor C2 is connected with the parasitic capacitor C1 in series, a capacitance C of the signal wiring 3 becomes the synthesized capacitance of the capacitors C1 and C2. Since the capacitance value C of the signal wiring 3 is decreased, the speed of an electric signal which is transmitted through the signal wiring 3 becomes high, and high-speed semiconductor memories and the like can be sufficiently handled.
COPYRIGHT: (C)1989,JPO&Japio
JP8941588A 1988-04-12 1988-04-12 Semiconductor integrated circuit Pending JPH01260842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8941588A JPH01260842A (en) 1988-04-12 1988-04-12 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8941588A JPH01260842A (en) 1988-04-12 1988-04-12 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH01260842A true true JPH01260842A (en) 1989-10-18

Family

ID=13970019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8941588A Pending JPH01260842A (en) 1988-04-12 1988-04-12 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH01260842A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1341377A2 (en) * 2002-02-27 2003-09-03 Canon Kabushiki Kaisha Signal processing device for image pickup apparatus
JP2006190761A (en) * 2005-01-05 2006-07-20 Elpida Memory Inc Semiconductor chip and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1341377A2 (en) * 2002-02-27 2003-09-03 Canon Kabushiki Kaisha Signal processing device for image pickup apparatus
US7429764B2 (en) 2002-02-27 2008-09-30 Canon Kabushiki Kaisha Signal processing device and image pickup apparatus using the same
JP2009088539A (en) * 2002-02-27 2009-04-23 Canon Inc Imaging apparatus
EP1341377A3 (en) * 2002-02-27 2010-11-03 Canon Kabushiki Kaisha Signal processing device for image pickup apparatus
JP2006190761A (en) * 2005-01-05 2006-07-20 Elpida Memory Inc Semiconductor chip and semiconductor device
JP4502820B2 (en) * 2005-01-05 2010-07-14 エルピーダメモリ株式会社 The semiconductor chip and semiconductor device

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