JPH01257370A - ショットキバリア半導体装置 - Google Patents
ショットキバリア半導体装置Info
- Publication number
- JPH01257370A JPH01257370A JP8408788A JP8408788A JPH01257370A JP H01257370 A JPH01257370 A JP H01257370A JP 8408788 A JP8408788 A JP 8408788A JP 8408788 A JP8408788 A JP 8408788A JP H01257370 A JPH01257370 A JP H01257370A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- semiconductor region
- insulating semiconductor
- schottky barrier
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 230000004888 barrier function Effects 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001446276 Helia <angisperm> Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408788A JPH01257370A (ja) | 1988-04-07 | 1988-04-07 | ショットキバリア半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408788A JPH01257370A (ja) | 1988-04-07 | 1988-04-07 | ショットキバリア半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01257370A true JPH01257370A (ja) | 1989-10-13 |
| JPH0580157B2 JPH0580157B2 (ko) | 1993-11-08 |
Family
ID=13820718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8408788A Granted JPH01257370A (ja) | 1988-04-07 | 1988-04-07 | ショットキバリア半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01257370A (ko) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148241A (en) * | 1989-12-15 | 1992-09-15 | Kabushiki Kaisha Toshiba | Method of manufacturing a schottky diode device |
| US5389815A (en) * | 1992-04-28 | 1995-02-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
| US5608244A (en) * | 1992-04-28 | 1997-03-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
| JP2007305609A (ja) * | 2006-04-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| WO2012157679A1 (ja) * | 2011-05-18 | 2012-11-22 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP2018082173A (ja) * | 2016-11-14 | 2018-05-24 | ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ | スタック状のショットキーダイオード |
-
1988
- 1988-04-07 JP JP8408788A patent/JPH01257370A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148241A (en) * | 1989-12-15 | 1992-09-15 | Kabushiki Kaisha Toshiba | Method of manufacturing a schottky diode device |
| US5389815A (en) * | 1992-04-28 | 1995-02-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
| US5608244A (en) * | 1992-04-28 | 1997-03-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
| JP2007305609A (ja) * | 2006-04-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| WO2012157679A1 (ja) * | 2011-05-18 | 2012-11-22 | ローム株式会社 | 半導体装置およびその製造方法 |
| US9111769B2 (en) | 2011-05-18 | 2015-08-18 | Rohm Co., Ltd. | Semiconductor device and method for producing same |
| JP2016066813A (ja) * | 2011-05-18 | 2016-04-28 | ローム株式会社 | 半導体装置およびその製造方法 |
| US9548353B2 (en) | 2011-05-18 | 2017-01-17 | Rohm Co., Ltd. | Wide band-gap semiconductor device including schotky electrode and method for producing same |
| JP2018082173A (ja) * | 2016-11-14 | 2018-05-24 | ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ | スタック状のショットキーダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580157B2 (ko) | 1993-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |