JPH01257370A - Schottky barrier semiconductor device - Google Patents

Schottky barrier semiconductor device

Info

Publication number
JPH01257370A
JPH01257370A JP8408788A JP8408788A JPH01257370A JP H01257370 A JPH01257370 A JP H01257370A JP 8408788 A JP8408788 A JP 8408788A JP 8408788 A JP8408788 A JP 8408788A JP H01257370 A JPH01257370 A JP H01257370A
Authority
JP
Japan
Prior art keywords
semi
insulating semiconductor
schottky barrier
reverse
plurality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8408788A
Other versions
JPH0580157B2 (en
Inventor
Hideyuki Ichinosawa
Koji Otsuka
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP8408788A priority Critical patent/JPH0580157B2/ja
Publication of JPH01257370A publication Critical patent/JPH01257370A/en
Publication of JPH0580157B2 publication Critical patent/JPH0580157B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To obtain high level breakdown strength and reverse surge strength of a Schottky barrier diode by relieving electric field concentration in a semiconductor region under the surroundings of the Schottky barrier induced at the time of reverse voltage application by first and second semi-insulating semiconductor regions.
CONSTITUTION: Second semi-insulating semiconductor regions 4 are provided in a region surrounded by a first semi-insulating semiconductor region 3 and are formed into a plurality of islands separated from each other. As the second semi-insulating semiconductor regions 4 are exposed on the top surface of a semiconductor substrate 1 like the first semi-insulating semiconductor region 3, they are in contact with the lower surface of a barrier electrode 2. Therefore, in the cross section, a plurality of the island-shape second semi-insulating semiconductor regions 4 and a plurality of n-type regions 1b are arranged alternately in the region surrounded by the first semi-insulating semiconductor region 4. As a result, even if a reverse surge current is concentrated to the surroundings of a Schottky barrier 10, the reverse current is widely dispersed. With this constitution, a Schottky barrier diode with a high reverse surge strength can be obtained.
COPYRIGHT: (C)1989,JPO&Japio
JP8408788A 1988-04-07 1988-04-07 Expired - Fee Related JPH0580157B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8408788A JPH0580157B2 (en) 1988-04-07 1988-04-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8408788A JPH0580157B2 (en) 1988-04-07 1988-04-07

Publications (2)

Publication Number Publication Date
JPH01257370A true JPH01257370A (en) 1989-10-13
JPH0580157B2 JPH0580157B2 (en) 1993-11-08

Family

ID=13820718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8408788A Expired - Fee Related JPH0580157B2 (en) 1988-04-07 1988-04-07

Country Status (1)

Country Link
JP (1) JPH0580157B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
US5389815A (en) * 1992-04-28 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JP2007305609A (en) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd Semiconductor device
WO2012157679A1 (en) * 2011-05-18 2012-11-22 ローム株式会社 Semiconductor device and method for producing same
JP2018082173A (en) * 2016-11-14 2018-05-24 3−5 パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング3−5 Power Electronics GmbH Stacked Schottky diode

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
US5389815A (en) * 1992-04-28 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JP2007305609A (en) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd Semiconductor device
WO2012157679A1 (en) * 2011-05-18 2012-11-22 ローム株式会社 Semiconductor device and method for producing same
US9111769B2 (en) 2011-05-18 2015-08-18 Rohm Co., Ltd. Semiconductor device and method for producing same
JP2016066813A (en) * 2011-05-18 2016-04-28 ローム株式会社 Semiconductor device and method of manufacturing the same
US9548353B2 (en) 2011-05-18 2017-01-17 Rohm Co., Ltd. Wide band-gap semiconductor device including schotky electrode and method for producing same
JP2018082173A (en) * 2016-11-14 2018-05-24 3−5 パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング3−5 Power Electronics GmbH Stacked Schottky diode

Also Published As

Publication number Publication date
JPH0580157B2 (en) 1993-11-08

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