JPH01257370A - ショットキバリア半導体装置 - Google Patents

ショットキバリア半導体装置

Info

Publication number
JPH01257370A
JPH01257370A JP8408788A JP8408788A JPH01257370A JP H01257370 A JPH01257370 A JP H01257370A JP 8408788 A JP8408788 A JP 8408788A JP 8408788 A JP8408788 A JP 8408788A JP H01257370 A JPH01257370 A JP H01257370A
Authority
JP
Japan
Prior art keywords
semi
semiconductor region
insulating semiconductor
schottky barrier
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8408788A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580157B2 (enrdf_load_stackoverflow
Inventor
Koji Otsuka
康二 大塚
Hideyuki Ichinosawa
市野沢　秀幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP8408788A priority Critical patent/JPH01257370A/ja
Publication of JPH01257370A publication Critical patent/JPH01257370A/ja
Publication of JPH0580157B2 publication Critical patent/JPH0580157B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP8408788A 1988-04-07 1988-04-07 ショットキバリア半導体装置 Granted JPH01257370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8408788A JPH01257370A (ja) 1988-04-07 1988-04-07 ショットキバリア半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8408788A JPH01257370A (ja) 1988-04-07 1988-04-07 ショットキバリア半導体装置

Publications (2)

Publication Number Publication Date
JPH01257370A true JPH01257370A (ja) 1989-10-13
JPH0580157B2 JPH0580157B2 (enrdf_load_stackoverflow) 1993-11-08

Family

ID=13820718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8408788A Granted JPH01257370A (ja) 1988-04-07 1988-04-07 ショットキバリア半導体装置

Country Status (1)

Country Link
JP (1) JPH01257370A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
US5389815A (en) * 1992-04-28 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JP2007305609A (ja) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置
WO2012157679A1 (ja) * 2011-05-18 2012-11-22 ローム株式会社 半導体装置およびその製造方法
JP2018082173A (ja) * 2016-11-14 2018-05-24 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ スタック状のショットキーダイオード

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
US5389815A (en) * 1992-04-28 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JP2007305609A (ja) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置
WO2012157679A1 (ja) * 2011-05-18 2012-11-22 ローム株式会社 半導体装置およびその製造方法
US9111769B2 (en) 2011-05-18 2015-08-18 Rohm Co., Ltd. Semiconductor device and method for producing same
JP2016066813A (ja) * 2011-05-18 2016-04-28 ローム株式会社 半導体装置およびその製造方法
US9548353B2 (en) 2011-05-18 2017-01-17 Rohm Co., Ltd. Wide band-gap semiconductor device including schotky electrode and method for producing same
JP2018082173A (ja) * 2016-11-14 2018-05-24 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ スタック状のショットキーダイオード

Also Published As

Publication number Publication date
JPH0580157B2 (enrdf_load_stackoverflow) 1993-11-08

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