JPH01255664A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPH01255664A
JPH01255664A JP8184688A JP8184688A JPH01255664A JP H01255664 A JPH01255664 A JP H01255664A JP 8184688 A JP8184688 A JP 8184688A JP 8184688 A JP8184688 A JP 8184688A JP H01255664 A JPH01255664 A JP H01255664A
Authority
JP
Japan
Prior art keywords
etc
thin film
plasma
specimen
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8184688A
Inventor
Takashi Akahori
Original Assignee
Sumitomo Metal Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Ind Ltd filed Critical Sumitomo Metal Ind Ltd
Priority to JP8184688A priority Critical patent/JPH01255664A/en
Publication of JPH01255664A publication Critical patent/JPH01255664A/en
Application status is Granted legal-status Critical

Links

Abstract

PURPOSE: To form a thin film on a specimen without lowering step coverage and evenness while making damage affecting an element small by especially making both reactive gas added with etching gas and sputtering gas to plasma with plasma discharge and producing the excitation species.
CONSTITUTION: A magnetic field is generated in plasma chamber 7 by electrifying a magnetic coil 3 and microwaves are introduced 8 into the chamber 7. Simultaneously SiH4, etc., as a feed source incorporated in reactive gas, O2 and H2O, etc., as an O2 feed source incorporated therein, gaseous Ar as sputtering gas and furthermore SF6 and CF4, etc., as etching gas are introduced into the chamber 7 respectively. As a result, SiH4 and O2, etc., are dissociated by plasma discharge to generate the excitation species such as ions and radicals. A thin film is formed on a base plate (specimen) 2 by allowing these excitation species to react and also negative auto-bias is induced by impressing RF high frequency on a specimen base 1 with a high frequency power source 5 and directional property is given to the plasma flow and a thin film excellent in step coverage and evenness is formed.
COPYRIGHT: (C)1989,JPO&Japio
JP8184688A 1988-04-01 1988-04-01 Formation of thin film Granted JPH01255664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8184688A JPH01255664A (en) 1988-04-01 1988-04-01 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8184688A JPH01255664A (en) 1988-04-01 1988-04-01 Formation of thin film

Publications (1)

Publication Number Publication Date
JPH01255664A true JPH01255664A (en) 1989-10-12

Family

ID=13757841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8184688A Granted JPH01255664A (en) 1988-04-01 1988-04-01 Formation of thin film

Country Status (1)

Country Link
JP (1) JPH01255664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429995A (en) * 1992-07-17 1995-07-04 Kabushiki Kaisha Toshiba Method of manufacturing silicon oxide film containing fluorine
KR100722847B1 (en) * 2005-11-30 2007-05-22 주식회사 아이피에스 Method and apparatus for depositing thin film using magnetic field

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429995A (en) * 1992-07-17 1995-07-04 Kabushiki Kaisha Toshiba Method of manufacturing silicon oxide film containing fluorine
KR100722847B1 (en) * 2005-11-30 2007-05-22 주식회사 아이피에스 Method and apparatus for depositing thin film using magnetic field

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