JPH01248543A - Chip carrier - Google Patents

Chip carrier

Info

Publication number
JPH01248543A
JPH01248543A JP63077140A JP7714088A JPH01248543A JP H01248543 A JPH01248543 A JP H01248543A JP 63077140 A JP63077140 A JP 63077140A JP 7714088 A JP7714088 A JP 7714088A JP H01248543 A JPH01248543 A JP H01248543A
Authority
JP
Japan
Prior art keywords
cap
tab
good thermal
adhesive
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63077140A
Other languages
Japanese (ja)
Other versions
JP2590521B2 (en
Inventor
Mutsuo Tsuji
睦夫 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63077140A priority Critical patent/JP2590521B2/en
Publication of JPH01248543A publication Critical patent/JPH01248543A/en
Application granted granted Critical
Publication of JP2590521B2 publication Critical patent/JP2590521B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To emit the heat generated by TAB and IC with good efficiency by using a metallic cap having a good thermal conduction rate to perform insulating coating on the cap upper surface. CONSTITUTION:A pad 2 for lead is formed on the surface and a pad 3 for in-and-output is formed on the rear of a wiring board 1, while the pad 2 for lead and a pad 3 for in-and-output are connected by an inner wiring 4. Further, a cap 5 is made of a metal (for instance, Cu/W) having a good thermal conduction rate and on the upper surface, an insulating coating 6 is thinly performed by an inorganic paste (for instance, glass paste) or organic insulating paste (for instance, polyimide, epoxy). TAB IC 7 is facedown mounted on the surface of the board 1 and the leads 8 of TAB IC 7 are connected to the pads 2 for lead. In TAB IC 7, a die is adhered to a cap 5 by an adhesive 9 having a good thermal conductive rate. Next, the cap 5 is adhered to the board 1 by an adhesive 10 and TAB IC 7 are sealed up. And finally, a heat sink 11 is adhered to the upper surface of the cap 5 by an adhesive 12 having a good thermal conductive rate.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電子装置等に使用される配線基板にＩＣを実
装するために用いるチップキャリアに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chip carrier used for mounting an IC on a wiring board used in an electronic device or the like.

〔従来の技術〕[Conventional technology]

従来、この種のチップキャリアは、ＩＣのダイとキャッ
プとの接着につかう接着剤に放熱性を良くするため導電
性の接着剤（例えばＡｇ入りエポキシ）を使うことが多
く、その場合、金属製のキャップを使うと、ＩＣと冷却
モジュールが絶縁されていなかった（例えばＵ、Ｓ、Ｐ
ａｔｅｎｔ４６５２９７０．あるいは、特許比１［５９
−６９７５９）　。Conventionally, this type of chip carrier often uses a conductive adhesive (for example, Ag-containing epoxy) to improve heat dissipation as the adhesive used to bond the IC die and cap. When using the cap, the IC and cooling module were not insulated (for example, U, S, P
agent4652970. Or, patent ratio 1 [59
-69759).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のチップキャリアは金属製のキャップを使
用するとＩＣと冷却モジュールが電気的に絶縁されてい
ないため、ＩＣと冷却モジュール等が電気的にショート
する危険がある。また、絶縁性材料（例えばＳｉＣ，Ａ
　　Ｎ）のキャップを使用すると、絶縁性材料はもろい
ため、厚くする必要があり、放熱性が悪くなるという欠
点がある。When the above-mentioned conventional chip carrier uses a metal cap, there is a risk of electrical short-circuiting between the IC and the cooling module because the IC and the cooling module are not electrically insulated. Also, insulating materials (e.g. SiC, A
If a cap of N) is used, since the insulating material is fragile, it needs to be thick, which has the disadvantage of poor heat dissipation.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のチップキャリアは、配線基板と該配線基板にフ
ェイスダウンで実装されるＴＡＢ　　ＩＣのダイに接着
され、かつ、該配線基板とで該ＴＡＢ　　ＩＣを密封す
る熱伝導率の良好な金属（例えばＣｕ　／　Ｗ　）から
できたキャップとからなり、冷却モジュールが接続され
る該キャップの上面に無機絶縁ペースト（例えばガラス
ペイント）あるいは、有機絶縁ペースト（例えば、ポリ
イミド、エポキシ）により絶縁コートが施されている。The chip carrier of the present invention is made of a metal having good thermal conductivity (e.g. The cap is made of Cu/W), and the upper surface of the cap to which the cooling module is connected is coated with an insulating coating using an inorganic insulating paste (e.g., glass paint) or an organic insulating paste (e.g., polyimide, epoxy). There is.

本発明のチップキャリアは、配線基板と、該配線基板に
フェイスダウンで実装されるＴＡＢ　　ＩＣと、該ＴＡ
Ｂ　　ＩＣのダイと接着され、がっ、該配線基板とで該
ＴＡＢ　　ＩＣを密封する熱伝導率の良好な金属からで
きたキャップとからなり、該キャップの上面に冷却モジ
ュールが接続されるチップキャリアにおいて、前記キャ
ップ上面に絶縁コートを有することを特徴とするチップ
キャリアであり、前記絶縁コートが、無機絶縁ペースト
を塗布し硬化させて形成されることを特徴とするチップ
キャリアであり、あるいは、前記絶縁コートが、有機絶
縁ペーストを塗布し硬化させて形成されることを特徴と
するチップキャリアである。The chip carrier of the present invention includes a wiring board, a TAB IC mounted face down on the wiring board, and a TAB IC mounted face down on the wiring board.
A chip carrier consisting of a cap made of a metal with good thermal conductivity that is bonded to the B IC die and seals the TAB IC with the wiring board, and a cooling module is connected to the top surface of the cap. The chip carrier is characterized in that it has an insulating coat on the upper surface of the cap, and the insulating coat is formed by applying and curing an inorganic insulating paste, or The chip carrier is characterized in that the insulating coat is formed by applying and curing an organic insulating paste.

〔実施例〕 次に本発明について図面を参照して説明する。〔Example〕 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例の模式的な縦断面図である。FIG. 1 is a schematic vertical sectional view of an embodiment of the present invention.

配線基板１は表面にリード用パッド２゜裏面に入出力用
パッド３が形成されており、リード用パッド２と入出力
用パッド３は内部配線４により接続されている。また、
キャップ５は熱伝導率の良好な金属（例えばＣｕ　／　
Ｗ　）でできており、上面には、無機絶縁ペースト（例
えばガラスペースト）あるいは、有機絶縁ペースト（例
えばポリイミド、エポキシ）により絶縁コート６が薄く
（１０〜３０μ）施されいる。ＴＡＢ　　ＩＣ７は、基
板１の表面にフェイスダウンで実装されＴＡＢ　　ＩＣ
７のり−ド８はリード用パヅド２に接続される。ＴＡＢ
　　ＩＣ７のダイはキャップ５と熱伝導率の良好な接着
剤（例えばＡｇ入りエポキシ）９によって接着される。The wiring board 1 has lead pads 2 on the front surface and input/output pads 3 on the back surface, and the lead pads 2 and the input/output pads 3 are connected by internal wiring 4. Also,
The cap 5 is made of a metal with good thermal conductivity (for example, Cu/
A thin (10 to 30 μm) insulating coat 6 is applied to the top surface using an inorganic insulating paste (eg, glass paste) or an organic insulating paste (eg, polyimide, epoxy). The TAB IC7 is mounted face down on the surface of the board 1.
7 is connected to the lead pad 2. TAB
The IC 7 die is bonded to the cap 5 with an adhesive 9 having good thermal conductivity (for example, Ag-containing epoxy).

次に、キャップ５と基板１が接着剤１０により接着され
、ＴＡＢ　　ＩＣ７は密封される。そして最後にキャッ
プ５上面にヒートシンク１１が熱伝導率の良好な接着剤
１２（例えばＡｇ入りエポキシ）により接着される。Next, the cap 5 and the substrate 1 are bonded together with an adhesive 10, and the TAB IC 7 is sealed. Finally, a heat sink 11 is bonded to the upper surface of the cap 5 using an adhesive 12 having good thermal conductivity (for example, epoxy containing Ag).

ＩＣが発生する熱は、熱伝導率の良好な接着剤９を通し
て熱伝導率の良好な金属でできたキャップ５に伝わる。The heat generated by the IC is transmitted to the cap 5 made of metal with good thermal conductivity through adhesive 9 with good thermal conductivity.

そして、絶縁コート６はペーストを塗布し硬化させて形
成されるため大変薄く（１０〜３０μ）形成することが
できる。そのため、熱抵抗を増加させることなく、キャ
ップ５に伝わった熱を熱伝導率の良好な接着剤１２を通
してヒートシンク１１に伝え放出することができる。ま
た、ＴＡＢ　　ＩＣ７とヒートシンク１１は絶縁コート
６により完全に絶縁されショートすることはない、また
、キャップ５が金属でできているため薄＜　（１０，５
ｎｍ以下）作られており、熱の放出が効率よく行なえる
。Since the insulating coat 6 is formed by applying and curing a paste, it can be formed very thinly (10 to 30 μm). Therefore, the heat transmitted to the cap 5 can be transmitted to the heat sink 11 and released through the adhesive 12 having good thermal conductivity without increasing thermal resistance. In addition, the TAB IC 7 and the heat sink 11 are completely insulated by the insulating coat 6 and will not be short-circuited, and since the cap 5 is made of metal, it is thin < (10,5
(nm or less) and can efficiently release heat.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は熱伝導率の良好な金属性の
キャップを使い、キャップ上面に絶縁コートを施すこと
により、ＴＡＢ　　ＩＣの発生する熱を効率良く放出す
ることができ、また、ＴＡＢＩＣと冷却モジュール等の
電気的ショートを防ぐことができる。As explained above, the present invention uses a metal cap with good thermal conductivity and applies an insulating coating to the top surface of the cap, thereby making it possible to efficiently dissipate the heat generated by TAB IC. Electrical short circuits in cooling modules, etc. can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明のチップキャリアの一実施例の模式的な
縦断面図、第２図は従来のチップキャリアの模式的な縦
断面図である。 １・・・配線基板、２・・・リード用パッド、３・・・
入出力用パッド、４・・・内部配線、５・・・キャップ
、６・・・絶縁コート、７・・・ＴＡＢ　　ＩＣｌ３・
・・リード、９．１０．１２・・・接着剤、１１・・・
ヒートシンク。FIG. 1 is a schematic vertical cross-sectional view of an embodiment of a chip carrier of the present invention, and FIG. 2 is a schematic vertical cross-sectional view of a conventional chip carrier. 1... Wiring board, 2... Lead pad, 3...
Input/output pad, 4...internal wiring, 5...cap, 6...insulation coat, 7...TAB ICl3・
...Lead, 9.10.12...Adhesive, 11...
heat sink.

Claims (1)

【特許請求の範囲】[Claims] 　配線基板と、該配線基板にフェイスダウンで実装され
るＴＡＢＩＣと、該ＴＡＢＩＣのダイと接着され、かつ
、該配線基板とで該ＴＡＢＩＣを密封する熱伝導率の良
好な金属からできたキャップとからなり、該キャップの
上面に冷却モジュールが接続されるチップキャリアにお
いて、前記キャップ上面に絶縁コートを有することを特
徴とするチップキャリア。A wiring board, a TABIC mounted face down on the wiring board, and a cap made of a metal with good thermal conductivity that is bonded to the die of the TABIC and seals the TABIC with the wiring board. A chip carrier having a cooling module connected to the upper surface of the cap, characterized in that the upper surface of the cap has an insulating coat.
JP63077140A 1988-03-29 1988-03-29 Chip carrier Expired - Lifetime JP2590521B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63077140A JP2590521B2 (en) 1988-03-29 1988-03-29 Chip carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63077140A JP2590521B2 (en) 1988-03-29 1988-03-29 Chip carrier

Publications (2)

Publication Number Publication Date
JPH01248543A true JPH01248543A (en) 1989-10-04
JP2590521B2 JP2590521B2 (en) 1997-03-12

Family

ID=13625499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63077140A Expired - Lifetime JP2590521B2 (en) 1988-03-29 1988-03-29 Chip carrier

Country Status (1)

Country Link
JP (1) JP2590521B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03244145A (en) * 1990-02-22 1991-10-30 Nec Corp Chip carrier
US5825625A (en) * 1996-05-20 1998-10-20 Hewlett-Packard Company Heat conductive substrate mounted in PC board for transferring heat from IC to heat sink
US5960535A (en) * 1997-10-28 1999-10-05 Hewlett-Packard Company Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink
US5966290A (en) * 1997-09-03 1999-10-12 Internatioinal Business Machines Corporation Electronic packages and a method to improve thermal performance of electronic packages
US6911724B1 (en) * 2001-09-27 2005-06-28 Marvell International Ltd. Integrated chip package having intermediate substrate with capacitor
JP2010171030A (en) * 2008-12-22 2010-08-05 Kaneka Corp Heat radiating structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001008221A1 (en) * 1999-07-26 2001-02-01 Tdk Corporation High frequency module

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03244145A (en) * 1990-02-22 1991-10-30 Nec Corp Chip carrier
JP2570880B2 (en) * 1990-02-22 1997-01-16 日本電気株式会社 Chip carrier
US5825625A (en) * 1996-05-20 1998-10-20 Hewlett-Packard Company Heat conductive substrate mounted in PC board for transferring heat from IC to heat sink
US5966290A (en) * 1997-09-03 1999-10-12 Internatioinal Business Machines Corporation Electronic packages and a method to improve thermal performance of electronic packages
US5960535A (en) * 1997-10-28 1999-10-05 Hewlett-Packard Company Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink
US6018193A (en) * 1997-10-28 2000-01-25 Hewlett-Packard Company Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink
US6911724B1 (en) * 2001-09-27 2005-06-28 Marvell International Ltd. Integrated chip package having intermediate substrate with capacitor
US6979894B1 (en) * 2001-09-27 2005-12-27 Marvell International Ltd. Integrated chip package having intermediate substrate
US6995463B1 (en) * 2001-09-27 2006-02-07 Marvell International Ltd. Integrated chip package having intermediate substrate and multiple semiconductor chips
US8525317B1 (en) 2001-09-27 2013-09-03 Marvell International Ltd. Integrated chip package having intermediate substrate with capacitor
JP2010171030A (en) * 2008-12-22 2010-08-05 Kaneka Corp Heat radiating structure

Also Published As

Publication number Publication date
JP2590521B2 (en) 1997-03-12

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