JPH01244626A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH01244626A
JPH01244626A JP63072601A JP7260188A JPH01244626A JP H01244626 A JPH01244626 A JP H01244626A JP 63072601 A JP63072601 A JP 63072601A JP 7260188 A JP7260188 A JP 7260188A JP H01244626 A JPH01244626 A JP H01244626A
Authority
JP
Japan
Prior art keywords
load
bonding
time
landing
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63072601A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawabata
川端　数博
Hiroshi Honda
本田　坦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63072601A priority Critical patent/JPH01244626A/en
Publication of JPH01244626A publication Critical patent/JPH01244626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218—Translational movements
    • H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce impact load at the time of landing, and to prevent the damage of a chip, etc., by setting load at the time of landing to load different from load at the time of bonding. CONSTITUTION:When lowering speed changes from high to constant near a bonding surface 11, an electromagnetic solenoid 14 for following up high speed turns OFF; subsequently, a bonding arm 7 is supported only by an electromagnetic solenoid 13 for setting bonding and is lowered at a uniform rate. Load at the time of the landing of a capillary 8 in the electromagnetic solenoid 13 for setting bonding is set to load P2 of 50% of bonding load P1, small impact load is applied centering around load P2 for a time from t1 to t2 at the time of landing, and load required for bonding is applied centering around load P1 for a time from t2 to t3 at the time of bonding after a time t2. That is, impact load at the time of landing is inhibited largely.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体チップの表面電極と外部リード電極
の間をワイヤ接続するワイヤボンディング方法の改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a wire bonding method for connecting a surface electrode of a semiconductor chip and an external lead electrode with a wire.

〔従来の技術〕[Conventional technology]

第４図は例えば特開昭５７−８７１４８号公報に開示さ
れている従来のワイヤボンディング方法であり、丁なわ
ち％第５図１０１のようにＩＥ滝…によりワイヤｕ２１
の先端にポール（１２＆＞　ｆ形成し１次に、第５図１
ｂ＋のようにキャピラリ（８）が下降して＠ｌボンディ
ング点である半導体チップ１１５１にボンディング荷重
と等荷重でポール（ｔｅａ）を圧着し、−に、第５図１
０１のようにワイヤ（１２１１１ｒ繰り出しながらキャ
ピラリ（８１が上昇し１次に、第５図１ｄｌのようにキ
ャピラリ（８）がＸＹ方向に移動しながらさらに上昇し
。FIG. 4 shows a conventional wire bonding method disclosed in, for example, Japanese Unexamined Patent Publication No. 57-87148.
Form a pole (12&>f) at the tip of the primary
The capillary (8) descends as indicated by b+, and presses the pole (tea) onto the semiconductor chip 1151, which is the bonding point, with a load equal to the bonding load.
As shown in 01, the capillary (81) rises as the wire (12111r) is fed out, and the capillary (8) further rises while moving in the XY direction as shown in FIG. 5, 1dl.

その後第５図Ｉｅ！のようにワイヤ１１２１　’５ひき
こみながら下降移動し、さらに、第５図１０１のように
下降してリードａ１１にワイヤｎ２１’に接触させ、第
５図ｔｇｌのようにワイヤループ１１７１を形成してリ
ードαＧにワイヤα２Ｊヲキャピラ１月８１でボンディ
ング荷重と等荷重で＠２ボンディング点に圧着し、更に
第５図１ｕｌｌのように、クランパ（図示せず）　ＶＣ
よりワイヤ１１２１　ｉ引張ってＩＪＪ断しながら再び
上昇して次のボンディングへ１＃よるという一専の作業
で行なわれてきた。After that, Figure 5 Ie! As shown in FIG. 5, the wire 1121'5 is pulled in and moved downward, and further, as shown in FIG. Crimp the wire α2J to the lead αG at the bonding point @2 with a capillar 81 with a load equal to the bonding load, and then use a clamper (not shown) VC as shown in Fig. 5 1ull.
This has been carried out as a one-time job, in which the wire 1121i is pulled, IJJ is cut, the wire is raised again, and the next bonding is carried out by 1#.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のワイヤボンディング方法ではキャピラリの智地時
ｔ１時点にボンディング粂件のＯ！嘔ｐ１（第５図中）
と寺荷筐で、ポールがチップに衝突したり、父、第２ボ
ンディング点ではワイヤがリードに衝突し、第５図ｒＣ
示すように大きな衝撃荷電でチップやリードが損傷する
という課題があった。In the conventional wire bonding method, the bonding point O! is reached at time t1 of the capillary. vomit p1 (in Figure 5)
At the terminal, the pole collided with the chip, and at the second bonding point, the wire collided with the lead.
As shown, there was a problem in that the chip and leads were damaged by large impact charges.

この発明は上記のような課題を解消するためになされた
もので、衝突時の衝撃荷屯を小又は犬にすることでボン
ディングの信幀性を向上できるワイヤポンディング方法
ゲ得ることｔ目的とする。This invention was made in order to solve the above-mentioned problems, and its purpose is to provide a wire bonding method that can improve the reliability of bonding by reducing the impact load at the time of collision. do.

〔課題を解決するための手段〕[Means to solve the problem]

この発明ｒＣ係るワイヤボンディング方法はチップやリ
ードに衝突する着地時の荷重を、必要とされるポンディ
ング荷電とは異なる荷重に設定したものである。In the wire bonding method according to this invention rC, the load at the time of landing that collides with the chip or the lead is set to a load different from the required bonding charge.

〔作用〕[Effect]

この発明におけるワイヤボンディング方法は、着地前に
ポンディング荷重とぼ異なる荷重ｅζ設定し１着地検出
後、ボンディングに必要な荷重に設定し、ボンディング
の倍幀性倉向上している＠〔発明の実施例〕 以下、この発明の一夾施例倉第１図ないし第２図で説明
する。図において、１２１はＸＹテーブル（図示せず）
に支持された二重支点、＋３１　ｉｄこの二重支点１２
１を中心とし、円弧・ｊの作による近似上下動Ｑ（能に
支持され北上下動ブロックで、ベアリングガイ）″（８
ａ　）（ｚ有している。＋４１１ｒＸ　１ｉｌｉ１様に
二電支点（２１に支承され次ボンディングアーム取付ｔ
ｇ、１６１は上下動ブロック（３１ヲ上下動させるリン
ク板で、先端にはベアリングガイ）″（１１１ｏ）’Ｉ
ｃガイドされたベアリング（５ａ）を有している。（６
）はリンク板＋５１にｉ！！切するモータ、（７１は前
記ボンディングアーム取付台１４１に取付けたボンディ
ングアーム、１８）は中心ｖｃ頁通孔を有した先細面形
状のキャピラリでボンディングアーム１’１ｌＶｃ取付
支持されている。In the wire bonding method of this invention, a load eζ that is almost different from the pounding load is set before landing, and after landing is detected, the load is set to the required load for bonding, thereby improving the bonding performance. Example] Hereinafter, one embodiment of the present invention will be explained with reference to FIGS. 1 and 2. In the figure, 121 is an XY table (not shown)
double fulcrum supported on +31 id this double fulcrum 12
1 as the center, approximate vertical movement Q by arc j (north vertical movement block supported by Noh, bearing guy)'' (8
a ) (z has.+411r
g, 161 is a vertical movement block (31 is a link plate that moves up and down, and there is a bearing guy at the tip)''(111o)'I
c-guided bearing (5a). (6
) is on the link board +51 i! ! The cutting motor (71 is a bonding arm attached to the bonding arm mount 141, and 18) is mounted and supported on the bonding arm 1'11Vc by a capillary having a tapered surface having a center vc through hole.

Ｕυはボンディング面、　１１２１はワイヤ％１３１　
、　＋１４１　ｉそれぞれボンディングアーム取付台（
４１にプランジャ一部（１８ａｌ（ｊ４ａ）を、上下動
ブロック１３＋にコイル部（１８ｂ）ｒ１４ｄ）ｇ４Ｉ
ｌを固定した第２の電磁ソレノイドｔｍ成するボンディ
ング荷夏設定用”ＩＣ磁ソレノイｒ、及び第１Ｌ７）１
［磁ソレノイドヲ構成する高速追従タンパ用電磁ソレノ
イｙ　、　　（ｔ４ａ）はボンディングアーム増付台（
４１に可調明に螺合されてプランジャ一部（１８ａ）を
貫通する接触子で接続線ｒ五〇ａ）に接続されている。Uυ is the bonding surface, 1121 is the wire% 131
, +141 i Each bonding arm mounting base (
41 is the plunger part (18al (j4a)), and the vertical movement block 13+ is the coil part (18b) r14d) g4I
A second electromagnetic solenoid (tm) with a fixed IC magnetic solenoid (R) and a first L (7) 1
[The electromagnetic solenoid y for the high-speed tracking tamper that constitutes the magnetic solenoid (t4a) is the bonding arm extension stand (
41, and is connected to the connecting wire r50a) by a contact that passes through a part of the plunger (18a).

（１４ｂ）は上下動ブロック１Ｂ＋　）貫通して上記コ
イル部ｒ１４ｄ）に給金された接触子で、接続線（１０
ｂ）を介して接層されている。(14b) is a contact that passes through the vertical movement block 1B+) and is fed to the coil part r14d), and is a contact wire (10
b).

上記の様に構成されたものにおいては、−一の下降切作
において、まず、扁速追従用’ｇａソレノイドＧ４とボ
ンド荷重設定ｍｔａンレノイＦ０３とが付勢されており
、各プランジャ都（１８ａ）（１４０）はコイル部（１
８ｂ）（１４ｄ）ｇｉｌｌに吸引され、接触子（１４ａ
）（ｔ４ｂ）が接触している。この状態で。In the device configured as described above, in the -1 downward cutting, first, the flat velocity following 'ga solenoid G4 and the bond load setting mtan solenoid F03 are energized, and each plunger capital (18a) is energized. (140) is the coil part (1
8b) (14d) It is attracted to the gill, and the contact (14a
)(t4b) are in contact. In this condition.

ボンディングアーム（８）はアーム取付台（４１を介し
て高速下降される。つまり、各電磁ソレノイドＪ３１１
１４　Ｋより、上下動ブロック１３１とアーム取付台１
４：とが′電磁的に津結されており、モータ１Ｂ）の回
転力がリンク板（６）、上下動ブロック１３１、アーム
取付台１４１　ｉ介してボンディングアーム（７１の上
下動として伝達される。The bonding arm (8) is lowered at high speed via the arm mount (41).In other words, each electromagnetic solenoid J311
14 From K, vertical movement block 131 and arm mounting base 1
4 are electromagnetically connected, and the rotational force of the motor 1B is transmitted as the vertical movement of the bonding arm (71) via the link plate (6), the vertical movement block 131, and the arm mounting base 141i. .

ところで−万、ポンディング面αυ近傍で下降速度が高
速から等速へ切り変わる１際、高速追従用′巾；磁ソレ
ノイ１″［１４１は０ＦＦｌ、、それ以降、ボンディン
グアーム；７１ケボンド設定用電磁ソレノイド１１３１
のみにより支持され等速下降を行う。ボンディングアー
ム＋？ｌ　ｎ　、等速で下降する為に、チャタリングを
起こすことはない。父、二重支点１２１により、上下動
ブロック（３）とアーム取付ｆ３１４１　ｕ支持されて
いるので、キャピラリ（８）がボンディング面ｔｌｌｌ
Ｋ”ｆｉるとボンディングアーム１７）？介してアーム
取付台１４１の下降に停止し、上下動ブロック’３１の
みわずかに下降し、接触子ｒ１４ａ）１１４ｂ）が離れ
、ボンディング面ｕ′ＩＪに到達したこと？電気信号と
して検知し、設定された時間だけ上下動？停止しボンデ
ィングを行う。By the way, when the descending speed changes from high speed to constant speed near the bonding surface αυ, the magnetic solenoid 1" for high-speed tracking [141 is 0FFl, after that, the bonding arm; 71 Solenoid 1131
It is supported by a chisel and descends at a constant speed. Bonding arm +? l n , because it descends at a constant speed, no chattering occurs. Since the vertical movement block (3) and the arm mounting f3141 u are supported by the double fulcrum 121, the capillary (8) is attached to the bonding surface tllll.
When K"fi, the arm mounting base 141 stops descending via the bonding arm 17)?, only the vertical movement block '31 descends slightly, and the contacts r14a) and 114b) separate and reach the bonding surface u'IJ. Detects it as an electrical signal, moves up and down for a set period of time, and then stops and performs bonding.

ところで、ボンド設定用回磁ソレノイド−は第２図のよ
うにキャピラリ（８）の宥地時の荷重がボンディング荷
重Ｐ１０５０％の荷重Ｐ２に設定されており１着地時に
は第２図ＩＥのようｖｃｔｌ力・らｔ２の間、荷重ｐ２
１中心として小さな爾撃荷血が与えられ、また、ｔ２時
点からのボンディング時ｖｃは、ｔ２からｔ３の間、荷
重Ｐ１ｆｔ中心としてボンディングに必要な荷重が与え
られる。つまり、着地時の衝撃荷重は大幅に抑制される
。By the way, as shown in Fig. 2, the bond setting rotating magnetic solenoid is set so that the load when the capillary (8) rests is P2 which is 1050% of the bonding load P1, and when the capillary (8) lands, the vctl force is applied as shown in Fig. 2 IE.・Between t2 and t2, load p2
A small force is applied as the center of the load, and a load necessary for bonding is applied to VC during bonding from time t2 as the center of load P1ft between t2 and t3. In other words, the impact load upon landing is significantly suppressed.

なお、上記実施例では、設定ポンディング荷＠により小
さくして、衝撃荷重？少くするものｆｔ説明したが、逆
に衝撃値を利用してポールをつぶしたい時は第３図に示
すように１着地前に設定ボンディング荷重より大きくす
ることも考えられる。In addition, in the above embodiment, the impact load is reduced by setting the pounding load @. As explained above, if you want to use the impact value to crush the pole, you can consider increasing it to a value greater than the set bonding load before landing, as shown in Figure 3.

〔発明の効果〕〔Effect of the invention〕

以上のようＶにの発明は、着地時の荷重を、ボンディン
グ時の荷重とは異なる荷重に設定したので、着地時の衝
撃性ｑヶ小さくして、チップ等の損傷を防止でき、また
、着地時の爾撃荷嘔會大とした時に汀ポールを確実につ
ぶすことがでＡ１ボ／ディングの信頼性を同上できる効
果がある。As described above, the invention in V sets the load at the time of landing to be different from the load at the time of bonding, so the impact strength at the time of landing is reduced by q, thereby preventing damage to chips, etc. By reliably crushing the poles when the meeting is large, the reliability of the A1 boarding can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例を示す部分断面国面図、第
２図り第１図の衝撃荷重と設定荷重を示すグラフ、第３
図は他の実施例を示すグラフ、妃４図は従来装置を示す
動作図、第５図は第４図の衝撃荷重と設定荷重を示すグ
ラフである。 図中、１８）はキャピラリ、　ａ’ｚｒはワイヤ、　Ｑ
３１はボンド荷重設定用電磁ソレノイＶである。 なお、６図中−−符号は同−又は相当部分を示す。Fig. 1 is a partial cross-sectional national view showing an embodiment of the present invention, Fig. 2 is a graph showing the impact load and set load in Fig. 1, and Fig. 3 is a graph showing the impact load and set load in Fig. 1.
Figure 4 is a graph showing another embodiment, Figure 4 is an operation diagram showing the conventional device, and Figure 5 is a graph showing the impact load and set load of Figure 4. In the figure, 18) is a capillary, a'zr is a wire, Q
31 is an electromagnetic solenoid V for setting a bond load. Note that in Figure 6, the symbols indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 　キャピラリ先端のポール又はワイヤの着地後、上記キ
ャピラリに荷重を加えた状態でボンディングするワイヤ
ボンディング方法において、着地時の荷重を、ボンディ
ング時の荷重とは異なる荷重に設定したことを特徴とす
るボンディング方法。A wire bonding method in which bonding is performed with a load applied to the capillary after the pole or wire at the tip of the capillary lands, characterized in that the load at the time of landing is set to a load different from the load at the time of bonding. .
JP63072601A 1988-03-25 1988-03-25 Wire bonding method Pending JPH01244626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63072601A JPH01244626A (en) 1988-03-25 1988-03-25 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63072601A JPH01244626A (en) 1988-03-25 1988-03-25 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH01244626A true JPH01244626A (en) 1989-09-29

Family

ID=13494082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63072601A Pending JPH01244626A (en) 1988-03-25 1988-03-25 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH01244626A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02231736A (en) * 1989-03-06 1990-09-13 Shinkawa Ltd Wire bonding method
EP0502674A2 (en) * 1991-03-04 1992-09-09 Kulicke & Soffa Investments, Inc High yield clampless wire-bonding method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126647A (en) * 1985-11-28 1987-06-08 Toshiba Corp Wire bonding method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126647A (en) * 1985-11-28 1987-06-08 Toshiba Corp Wire bonding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02231736A (en) * 1989-03-06 1990-09-13 Shinkawa Ltd Wire bonding method
EP0502674A2 (en) * 1991-03-04 1992-09-09 Kulicke & Soffa Investments, Inc High yield clampless wire-bonding method
EP0502674A3 (en) * 1991-03-04 1993-09-01 Kulicke & Soffa Investments Inc High yield clampless wire-bonding method

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