JPS5967643A - Wire bonder - Google Patents

Wire bonder

Info

Publication number
JPS5967643A
JPS5967643A JP57177662A JP17766282A JPS5967643A JP S5967643 A JPS5967643 A JP S5967643A JP 57177662 A JP57177662 A JP 57177662A JP 17766282 A JP17766282 A JP 17766282A JP S5967643 A JPS5967643 A JP S5967643A
Authority
JP
Japan
Prior art keywords
wire
metal
discharge
ball
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57177662A
Other languages
Japanese (ja)
Inventor
Michio Okamoto
道夫 岡本
Susumu Okikawa
進 沖川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57177662A priority Critical patent/JPS5967643A/en
Publication of JPS5967643A publication Critical patent/JPS5967643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the eccentricity of a ball for bonding by disposing a metal easy to discharge electrons to one part of an electrode to which the tip of an Al wire is opposed. CONSTITUTION:The electrode 19, particularly, a discharge section 19a, is formed by a metal, such as stainless, tungsten, etc., but the metal easy to discharge electrons, a metal 20 through which discharge is easy to be generated, is buried at a position on the extension of the core center line of the Al wire 14. There are thorium tungsten, zirconium tungsten, aluminum oxide, etc. as the metal. It is preferable that the metal 20 is formed in a small area as much as possible in a limit where necessary discharge is obtained. Accordingly, the ball formed at the tip of the wire 14 is formed at a position just under the Al wire at all times because a discharge arc is directed in the core center line direction of the Al wire at all times, thus positively preventing the eccentricity of the ball.

Description

【発明の詳細な説明】 本発明はボンダビリティの良好なワイヤボンダに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonder with good bondability.

半導体装置の製造工程の一つに、リードフレームに固着
した半導体素子ペレットとリードフレームとを電気的に
接続する所謂ワイヤボンディング工程がある。そして、
このワイヤボンディングに用いるワイヤとしてＡｕ線、
Ａｔ線が使用されて（・るが低価格であるＡｔ線が近年
多用されて℃・る。One of the manufacturing processes for semiconductor devices is a so-called wire bonding process in which a semiconductor element pellet fixed to a lead frame is electrically connected to the lead frame. and,
The wire used for this wire bonding is Au wire,
In recent years, At wires have been widely used due to their low cost.

また、Ａｔ線を使用した場合にも、超音波ボンディング
法では、ワイヤとボンデイーフグに方向性の制約を受け
てワイヤボンディング作業が面倒になりかつワイヤボン
ダが複雑構造となることから、熱圧着法（ネイルヘッド
ボンディング法）が近年開発され実用化されている。Furthermore, even when At wires are used, in the ultrasonic bonding method, the wire bonding work becomes troublesome due to the directionality restrictions of the wire and the bonder, and the wire bonder has a complicated structure. Head bonding method) has been developed and put into practical use in recent years.

即ち、このワイヤボンディング法は、本出願人が先に提
案しているところであり、第１図に示すようにキャピラ
リ２を挿通させたＡｔ線１の先端を電極３に対向位置さ
せると共にＡ、　Ｌ線先端と電極：うとの間を所定のガ
ス（例えばＩ−１２＋Ａ　ｒ　）雰囲気に保ち、しかる
上で両者間に高圧電圧を印加して放電４を発生させるこ
とにより、この放電エネルギーによってＡｔ線線光先端
ボールを形成するようにしたものである。ボール形成後
は従来と同様に熱圧着としてＡ　／、線１をベレットや
リードフレームに接続することは言うまでもない。この
場合、特にカバー５を設けないものもある。That is, this wire bonding method was previously proposed by the present applicant, and as shown in FIG. By maintaining a predetermined gas atmosphere (for example, I-12+A r ) between the wire tip and the electrode, and then applying a high voltage between the two to generate a discharge 4, the At wire wire is A light tip ball is formed. Needless to say, after the ball is formed, the A/ and wire 1 are connected to the pellet or lead frame by thermocompression bonding as in the conventional method. In this case, there are some cases in which the cover 5 is not particularly provided.

ところで、このワイヤボンディング法にあっては、Ａｔ
線先端に形成されるボールは、第２図ｆＡ）にボール６
で示すようにＡｔ線ｌの芯中心線上にボール中心が位置
されることが好ましく、同図１１’ｌ）のようにボール
７が芯中心線から外れて偏心されることは好１しくない
。つまり、ボールが偏心するとキャピラリに対する熱圧
着中心位置がずれ、Ａ　ｔＨＢ、ｆａＨｔ３ｔ１位カベ
レットやリードフレームのパッド部からはみ出して短絡
事故が生じ、或いは接続不良が生じる等の不具合が発生
する。By the way, in this wire bonding method, At
The ball formed at the tip of the line is ball 6 in Figure 2 fA).
It is preferable that the ball center is located on the core center line of the At line 1 as shown in FIG. In other words, if the ball is eccentric, the center position of the thermocompression bonding with respect to the capillary is shifted, and the ball protrudes from the pad portion of the A tHB, faH 3 t 1 position covert or lead frame, causing problems such as a short circuit or a poor connection.

このようなボールの偏心は、本発明者の検討によれば、
放電のアークの方向がＡＡ線の芯中心方向に安定して得
られず、種々の条件の違いに応じてアーク方向が偏倚さ
れるため、このアークの延長方向に生ずるアーク力がボ
ールを偏心させろことによって発生されるものと考えら
れる。例えば、同図（Ｃ１のようにＡ７線１が電極３の
端部近傍に対向位置しているときにはアーク４は電極中
央部に向かって生じるため、そのアーク方法にボール中
心が偏倚されることになろう したがって本発明の目的はＡｔ線に形成するボンディン
グ用ボールの偏心を防止してポンダビリティの良好なワ
イヤボンディングを行なうことができるワイヤボンダを
提供することにある。According to the inventor's study, such eccentricity of the ball is caused by:
The direction of the arc of the discharge cannot be stably obtained in the direction of the center of the core of the AA wire, and the arc direction is deviated depending on various conditions, so the arc force generated in the direction of extension of this arc causes the ball to become eccentric. This is thought to be caused by this. For example, when the A7 wire 1 is located opposite the end of the electrode 3 as shown in the same figure (C1), the arc 4 is generated toward the center of the electrode, so the center of the ball is biased due to the arc method. Therefore, an object of the present invention is to provide a wire bonder capable of performing wire bonding with good bondability by preventing eccentricity of a bonding ball formed on an At wire.

このような目的を達成するために本発明は、Ａｔ線の先
端が対向する電極の一部に電子を放出し易い金属を配設
するようにしている。In order to achieve such an object, the present invention disposes a metal that easily emits electrons in a part of the electrode where the tip of the At wire faces.

以下、本発明を図示の実施例により説明する。Hereinafter, the present invention will be explained with reference to illustrated embodiments.

第３図は本発明の一実施例を示し、ＸＹテーブル１０上
に搭載したボンディングへラド１１上には上下揺動可能
にボンディングアーム１２を支持し、このアーム１２の
先端にキャピラリ１３を固着している。このキャピラリ
１３には図外のスプールに捲回したワイヤ、即ちＡｔ線
線種４挿通し、Ａｔ線線種４先端をキャピラリ１３の下
方へ突出させている。前記キャピラリ１３の下方にはボ
ンディングステージ１５を配設し、この上にはワイヤボ
ンディングが施される半導体構体１６を載置している。FIG. 3 shows an embodiment of the present invention, in which a bonding arm 12 is supported on a bonding arm 11 mounted on an XY table 10 so as to be able to swing up and down, and a capillary 13 is fixed to the tip of this arm 12. ing. A wire wound around a spool (not shown), that is, an At wire type 4 is inserted into the capillary 13, and the tip of the At wire type 4 projects downward from the capillary 13. A bonding stage 15 is provided below the capillary 13, and a semiconductor structure 16 to be wire bonded is placed on the bonding stage 15.

一方、前記キャピラリ１３の近傍位置には支持体１７に
よってその上端を軸持１８した略Ｉ・字状の電極１９を
配設し、下辺の放電部１９ａを紙面と直角方向に揺動で
きるようにすると共に、その下動位置において前記Ａｔ
線１４の先端に対向位置できるようにしている。また、
電極１９とクランパ２６間に印加した高圧電流により放
電部１９ａとＡｔ線１４間に放電が発生するようにし、
更に両者間には例えばＡｒとＨ２の混合ガスを通流して
そのガス雰囲気を形成している。On the other hand, a substantially I-shaped electrode 19 whose upper end is supported 18 by a supporter 17 is disposed near the capillary 13 so that the discharge section 19a on the lower side can be swung in a direction perpendicular to the plane of the paper. At the same time, the At
It is arranged so that it can be positioned opposite to the tip of the wire 14. Also,
A high voltage current applied between the electrode 19 and the clamper 26 causes a discharge to occur between the discharge portion 19a and the At wire 14,
Further, a mixed gas of, for example, Ar and H2 is passed between the two to form a gas atmosphere.

そして、前記電極１９、特に放電部１９ａは第４図（Ａ
）、ＦＢＩのように、全体をステンレスやタングステン
等の金属にて形処しているが、前記Ａｔ線１４に正対す
る位置、換言すればＡｔ１１ａＩ４の芯中心線の延長上
の位置には電子を放出し易い金属、つまり放電の生じ易
い金属２０を埋設しているうこの金属としては、トリウ
ムタングステン、ジルコニウムタングステン、酸化アル
ミニウム等がある。また、この金属２０は必要な放電が
得られる限度でなるべく小面積に形成することが好まし
い。The electrode 19, especially the discharge portion 19a, is shown in FIG.
), the entire body is made of metal such as stainless steel or tungsten like the FBI, but electrons are emitted at the position directly facing the At line 14, in other words, at the position on the extension of the core center line of At11aI4. Examples of the metal in which the metal 20 that is likely to generate electric discharge is buried include thorium tungsten, zirconium tungsten, aluminum oxide, and the like. Further, it is preferable that the metal 20 be formed in as small an area as possible within the limit that the necessary discharge can be obtained.

以上の構成によれば、第３図および第４図のように、電
極１９を下方に揺動位置してＡｔ線線種４先端に放電部
１９ａを正対させ、必要に応じてＡｒ十８２ガスを供給
しながら電極１９、キャピラリ１３間に高圧電流を印加
する。これにより、放電部１９ａでは励起された電子が
Ａｔ線線種４向かって放出され、即ち放電が生じ、その
放電エネルギーによってＡｔ線１４先端にボール２１が
形成される。このとき、放電部１９ａでは、電子を放出
し易い金属２０の特性によってこの金属とＡｔ線線種４
の間に放電（アーク）が生じろことになり、結局放電ア
ークはＡｔ線線種４芯中心線に沿った方向に発生するこ
とになる。According to the above configuration, as shown in FIG. 3 and FIG. A high voltage current is applied between the electrode 19 and the capillary 13 while supplying gas. As a result, excited electrons are emitted toward the At line type 4 in the discharge section 19a, that is, a discharge occurs, and a ball 21 is formed at the tip of the At line 14 by the discharge energy. At this time, in the discharge part 19a, due to the characteristics of the metal 20 that easily emits electrons, this metal and the At line type 4
A discharge (arc) will occur between the two, and the discharge arc will eventually occur in the direction along the center line of the four cores of the At wire type.

したがって、Ａｔ線線種４先端に形成されるボールは、
放電アークが常にＡｔ線の窓中心線方向であることによ
って、常にＡｔ線の直下位置に形成されることになり、
その偏心を確実に防止することができるのである。これ
により、常に安定したワイヤボンディングを可能にし、
そのボンダピリティを向上することができる。Therefore, the ball formed at the tip of At line type 4 is
Since the discharge arc is always in the direction of the window center line of the At line, it is always formed directly below the At line.
This makes it possible to reliably prevent eccentricity. This enables stable wire bonding at all times,
The bondability can be improved.

なお、ボール形成後は電極１９を上方へ揺動して放電部
１９ａｉキヤピラリ１３の下方から退避させ、しかる上
でボンディングアーム１２を作動してボールを半導体構
体１６上に圧着し、ワイヤボンディングを完了させるこ
とは言うまでもない。After the ball is formed, the electrode 19 is swung upward to retreat from below the discharge section 19ai capillary 13, and then the bonding arm 12 is actuated to press the ball onto the semiconductor structure 16, completing wire bonding. Needless to say, let's do it.

第５図は本発明の他の実施例を示す。本実施例では、電
極２２、特に放電部２２ａの全体を電子を放出し易い金
属２３（例えば、トリウムタングステン）にて形成する
と共に、この外周にテフロン等の金属にてカバー２４を
設けないようにしたものである。つまり、Ａｔ線線種４
先端に正対する位置にのみ電子を放出し易い金属を露呈
させ、電極２２とＡｔ線線種４の放電に際してはこの露
呈部分２５とＡｔ線との間でのみ放電アークが生じるよ
うにしている。FIG. 5 shows another embodiment of the invention. In this embodiment, the entire electrode 22, especially the discharge portion 22a, is formed of a metal 23 that easily emits electrons (for example, thorium tungsten), and a cover 24 made of a metal such as Teflon is not provided on the outer periphery of the metal 23. This is what I did. In other words, At line type 4
A metal that easily emits electrons is exposed only at a position directly facing the tip, and when the electrode 22 and the At wire type 4 are discharged, a discharge arc is generated only between the exposed portion 25 and the At wire.

したがって本実施例においても放電アークはＡｔ線線種
４芯中心線上に発生し、ボールの偏心を防止して良好な
ボンダビリティを得ることができる。Therefore, in this embodiment as well, the discharge arc is generated on the center line of the four cores of the At wire type, thereby preventing eccentricity of the ball and achieving good bondability.

なお、本例では金属を埋設する加工が不要であり、その
形成が容易である。Note that in this example, processing for embedding metal is not required, and the formation thereof is easy.

ここで、電子を放出し易い金属は、電極の他の部分との
相対比で考えてもよく、種々の金属の適用が可能である
。Here, the metal that easily emits electrons may be considered in terms of the relative ratio to other parts of the electrode, and various metals can be used.

以上のように本発明のワイヤボンダは、Ａｔ線に正対す
る電極位置を電子を放出し易い金属にて構成しているの
で、Ａｔ線と放電部との間に発生する放電アークの方向
を常にＡｔ線の窓中心線に沿う方向にすることができ、
これによりＡｔ線の先端に形成したボールの偏心を確実
に防止し、かつ良好なポンダビリティのワイヤポンディ
ングを行なうことができるという効果を奏する。As described above, in the wire bonder of the present invention, since the electrode position directly facing the At wire is made of a metal that easily emits electrons, the direction of the discharge arc generated between the At wire and the discharge part is always aligned with the At wire. The line can be oriented along the window center line,
This has the effect that eccentricity of the ball formed at the tip of the At wire can be reliably prevented and wire bonding with good bondability can be performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のワイヤボンダの一部の構成図、第２図（
Ａｌ、（Ｂｌはボール形状を示す図、（ＣＩはボールの
偏心を説明する図、 第３図は本発明のワイヤボンダの全体構成図、第４図（
Ａｌ、ＩＢＩは要部の拡大図と平面図、第５図は他の実
施例の断面図である。 １１・・・ボンディングヘッド、１２・・・ボンディン
グアーム、１３・・・キャピラリ、１４・・・Ａｔ線、
１９・・・電極、２０・・・電子の放出し易い金属、２
１・・・ボール、２２・・・電極、２３・・・電子の放
出し易い金属、２４・・・カバー、２５・・・露呈部分
。 第　　１　　図 （Ａ）　　（８）　　　　　　ｃすFigure 1 is a partial configuration diagram of a conventional wire bonder, and Figure 2 (
Al, (Bl is a diagram showing the shape of the ball, (CI is a diagram explaining the eccentricity of the ball, Fig. 3 is an overall configuration diagram of the wire bonder of the present invention, Fig. 4 is
Al and IBI are enlarged views and plan views of essential parts, and FIG. 5 is a sectional view of another embodiment. 11... Bonding head, 12... Bonding arm, 13... Capillary, 14... At wire,
19... Electrode, 20... Metal that easily emits electrons, 2
DESCRIPTION OF SYMBOLS 1...Ball, 22...Electrode, 23...Metal that easily emits electrons, 24...Cover, 25...Exposed portion. Figure 1 (A) (8)

Claims (1)

【特許請求の範囲】 １　ボンディング用ワイヤとしてＡｔ線を使用し、この
Ａｔ線の先端と電極との間に放電を発生してＡ４線の先
端に熱圧着用のボールを形成するワイヤボンダであって
、前記電極はＡｔ線の先端が正対する部分を電子の放出
し易い金属にて形成したことを特徴とするワイヤボンダ
。 ２　電子の放出し易い金属を電極に埋設してなる特許請
求の範囲第１項記載のワイヤボンダ。 ３　電極を電子の放出し易い金属にて形成すると共に、
前記正対する部分を除いて他の金属でカバーを形成して
なる特許請求の範囲第１項記載のワイヤボンダ。[Claims] 1. A wire bonder that uses an At wire as a bonding wire and generates a discharge between the tip of the At wire and an electrode to form a ball for thermocompression at the tip of the A4 wire. . A wire bonder, characterized in that the portion of the electrode directly facing the tip of the At wire is formed of a metal that easily emits electrons. 2. The wire bonder according to claim 1, wherein a metal that easily emits electrons is embedded in the electrode. 3. Forming the electrode from a metal that easily emits electrons,
2. The wire bonder according to claim 1, wherein a cover is formed of another metal except for the directly facing portion.
JP57177662A 1982-10-12 1982-10-12 Wire bonder Pending JPS5967643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57177662A JPS5967643A (en) 1982-10-12 1982-10-12 Wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57177662A JPS5967643A (en) 1982-10-12 1982-10-12 Wire bonder

Publications (1)

Publication Number Publication Date
JPS5967643A true JPS5967643A (en) 1984-04-17

Family

ID=16034905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57177662A Pending JPS5967643A (en) 1982-10-12 1982-10-12 Wire bonder

Country Status (1)

Country Link
JP (1) JPS5967643A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183323A (en) * 1993-12-22 1995-07-21 Nec Yamagata Ltd Wire bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183323A (en) * 1993-12-22 1995-07-21 Nec Yamagata Ltd Wire bonding method

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