JPH0124290B2 - - Google Patents
Info
- Publication number
- JPH0124290B2 JPH0124290B2 JP10100681A JP10100681A JPH0124290B2 JP H0124290 B2 JPH0124290 B2 JP H0124290B2 JP 10100681 A JP10100681 A JP 10100681A JP 10100681 A JP10100681 A JP 10100681A JP H0124290 B2 JPH0124290 B2 JP H0124290B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- methacrylate
- ionizing radiation
- pattern
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005865 ionizing radiation Effects 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 229920001577 copolymer Polymers 0.000 claims description 9
- 238000007334 copolymerization reaction Methods 0.000 claims description 6
- KBWPORYZNRETSR-UHFFFAOYSA-N 2,2-dichloroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(Cl)Cl KBWPORYZNRETSR-UHFFFAOYSA-N 0.000 claims description 4
- IUGNCEABJSRDPG-UHFFFAOYSA-N 2,2,2-trichloroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(Cl)(Cl)Cl IUGNCEABJSRDPG-UHFFFAOYSA-N 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10100681A JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10100681A JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11494979A Division JPS5639537A (en) | 1979-09-07 | 1979-09-07 | Ionized radiation sensitive resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57108847A JPS57108847A (en) | 1982-07-07 |
| JPH0124290B2 true JPH0124290B2 (enrdf_load_stackoverflow) | 1989-05-11 |
Family
ID=14289157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10100681A Granted JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57108847A (enrdf_load_stackoverflow) |
-
1981
- 1981-06-29 JP JP10100681A patent/JPS57108847A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57108847A (en) | 1982-07-07 |
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