JPH01241825A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce warpage of a semiconductor substrate due to film stress by providing grooves at any process time of forming and at any position on a film to be deposited on the principal plane of the semiconductor. CONSTITUTION:When a semiconductor substrate has been warped, grooves 1 and formed on a deposited film in a dicing line portion on a water by a laser beam. The number of grooves may be increased as necessary, although two grooves, one vertical and one horizontal, are formed in this case. The depth of the groove may take any value, shallower or deeper than, or equal to the deposited film thickness insofar as the warpage of the semiconductor substrate can be reduced to within + or -1-2mum accuracy of which is required for highly accurate patterning. The width of the film may be substantially zero microns if the surface of the substrate is warped in recess and it may be several microns if the surface is warped in projection. No high accuracy in terms of position is required as far as the grooves are positioned within the dicing line portion. The grooves may also be formed on chips on the condition that some chips are sacrificed. Substantially no positional accuracy is required in this case. The grooves may be formed at an arbitrary forming process before the lithography process as far as the warpage of the semiconductor substrate can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Minute Hand) The present invention particularly relates to a method of forming a highly accurate pattern in the manufacturing process of a semiconductor device.

(Prior Art) In recent semiconductor devices, in order to achieve high density and high integration, an LS structure in which the number 1 is also 0) is used.

In a structure like this, in which several layers of metal are deposited, the semiconductor substrate often warps due to my own stress (a problem that the invention aims to solve).As stated above, In addition, in the conventional method, the semiconductor substrate may warp due to the stress caused by the deposition, and for example, the pattern may be elongated or out of focus may occur in the lithography process, making it impossible to form a high fit f''l pattern.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that can easily reduce the cloudiness and warp of a semiconductor substrate as described above.

[111th Form of the Invention] (Means for Solving Section @) In order to achieve the above-mentioned object, one purpose is to apply a cloud 11i# which is deposited on the main surface of a semiconductor in any process and at any position.
The purpose of this is to reduce the warping of the semiconductor substrate caused by mechanical stress.

(Function) When manufacturing a semiconductor device according to the present invention, forming grooves on the main surface of a semiconductor electrode plate,
Since the stress caused by the deposition can be relaxed in the LJ) portion and the warpage of the medium conductor bottle plate can be reduced, it becomes possible to form a highly accurate pattern in the lithography process.

(Example) The following is a drawing of an example of this information? I will explain using

In the manufacturing process of a semiconductor device, when a semiconductor substrate is warped, as shown in FIG. 1, a laser beam is irradiated once to form a groove 1 in the deposited portion of the dicing 94 on the wafer. Here, in Figure 1, there are 111 lines, one each in the vertical and horizontal directions.
Although one was formed, the number can be increased if necessary.

In addition, if the depth of the groove can be reduced to within ±1 to 2/1 m, which is required for high-precision pattern formation, the warpage of the semiconductor substrate can be reduced even if it is shallower than the deposited thickness as shown in Figure 2+a). , 21st fb) According to (4), the thickness may be the same as the membrane thickness, or it may be deeper than the olfactory thickness as shown in Figure 2 (e).

In addition, the width of the groove is approximately 0 μm when the surface is concave or curved.
In the case of convex warping, a few micrometers is sufficient.

To prevent vinegar from forming in the grooves, it is only necessary that the grooves are dicing-lined, and a high degree of wiping is not required. By sacrificing a few more chips, grooves can be formed on the chips, in which case no positional accuracy is required.

If the timing for forming the grooves is in doubt, any process ζ that can reduce the warpage of the semiconductor substrate before the phosphorography process may be performed.

Another example of forming the groove is a method using a blade-like tool.

〔Effect of the invention〕

As stated above, according to the present invention, if the semiconductor substrate is warped due to stress of a semiconductor device (layered in the IT manufacturing process) of several 1%, Since warpage can be easily reduced, a high-precision cover tuff can be formed in the lithography process, and a high-density 1
Further ratios and higher integration ratios are possible.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the state of the art according to the present invention, and FIG. 2 is a cross-sectional view. In Figures 1 and 2. l...groove, 2...chip, 3...deposition/deposition 3 and layer region, 4...semiconductor substrate (wafer)
Agent Patent Attorney Noriyuki Chika

Claims (1)

[Claims] 1. A method of manufacturing a semiconductor device, comprising forming a groove at an arbitrary step and at an arbitrary position in a pattern deposited on a main surface of a semiconductor.