JPH01239982A - Mounting of semiconductor laser - Google Patents

Abstract

PURPOSE:To execute a good die-bonding operation by a method wherein layers of Cr, Au and an AuSn alloy as metals for heat-welding are laminated one after another on an electrode of a semiconductor laser crystal and this crystal is die-bonded to a heat sink via the layers. CONSTITUTION:A resist pattern is formed on an electrode 104 of a semiconductor laser 105; Cr (100Angstrom ), Au (500Angstrom ) and an AuSn alloy (1mum) are vapor-deposited one after another on the electrode face 104. Then, the deposited film other than that on the electrode is removed by a lift-off process; a heat welded metal layer of a prescribed pattern is formed. A semiconductor laser crystal is die- bonded to a heat sink via the metal layers. By this setup, a good die-bonding operation can be executed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for mounting a semiconductor laser by fusing it to a heat sink via a fusing metal.

[Prior art] The conventional semiconductor laser mounting method is as shown in Figure 2.
On the (202) electrode of the semiconductor laser crystal, (201)
A semiconductor laser crystal was bonded to a heat sink using the AuSn alloy as a fusion metal.

[Problem to be solved by the invention]

However, in the conventional technology, during the lift-off process when patterning the fusion metal on the semiconductor laser crystal, the adhesion between the electrode surface and the AuSn alloy is poor, so the fusion metal pattern and the lift-off part are removed from the electrode of the semiconductor laser crystal. There were problems such as peeling off from the surface and poor adhesion even after die bonding, resulting in the semiconductor laser crystal coming off from the heat sink during the subsequent wire bonding process, which lowered yield. SUMMARY OF THE INVENTION The present invention aims to solve such problems, and its purpose is to provide a method for mounting a semiconductor laser that has good adhesion to the electrode surface of a semiconductor laser crystal and can perform good gripping. It's there to do.

[Means for Solving the Problems] In order to solve the above problems, the semiconductor laser mounting method of the present invention involves laminating chromium, gold, and a gold-tin alloy as fusion metals on the double positive surface of the semiconductor laser. process and
The method is characterized in that it includes a step of die-bonding the semiconductor laser to the heat sink via the fusion metal.

[Example 1] FIG. 1 is a perspective view of a semiconductor laser in the semiconductor laser mounting method of the present invention. A resist pattern is formed on the (104) electrode of the (105) semiconductor laser crystal by a normal photo process, and Cr is 100A and U is 500A.
1 μm of AuSn alloy was sequentially deposited on the +104) electrode surface. After the vapor deposition, the vapor deposited film on the resist other than the (104) electrode is removed by a lift-off process to form a (103) Cr layer, (102) Au6, (102) Au6, (
101) Form a fused metal layer consisting of an AuSn alloy layer. Since the [03) Cr layer enhances the adhesion with the (104)We, the fused metal layer does not peel off from the electrode surface during the lift-off process.

Next, a semiconductor laser crystal is die-bonded to the heat sink via this fused metal layer. (103) Cr layer and (10
The (102) Au layer between the A u S n alloy layer in 1) prevents the (103) Cr layer from corroding the (+01) AuSn alloy layer and weakening the adhesion with the heat sink, resulting in good die bonding. becomes possible.

[Effect of the invention 1] As described above, according to the present invention, a Cr layer, an Au layer, and an AuSn alloy layer are sequentially laminated on the electrode of a semiconductor laser crystal as a fusion metal, and die-bonded to a heat sink via this. This has the following effects. The peeling of the fused metal from the electrode due to poor adhesion when forming the fused metal pattern in the lift-off process is completely eliminated by laminating a Cr layer with good adhesion, which reduces the yield of the lift-off process. greatly improve. In addition, the Au layer is formed by alloying the Cr layer with the AuSn alloy layer.
This prevents the adhesion of Sn to the heat sink from deteriorating and enables good die bonding. Furthermore, as a result of the improved adhesion of the fusion metal, the degree of freedom in die bonding conditions can be increased, allowing the conditions to be set so as not to apply stress to the semiconductor laser crystal, thereby reducing the occurrence of defects due to tie pounds. Due to the above-described effects, the yield in the semiconductor laser mounting process can be greatly improved and manufacturing costs can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a semiconductor laser in the semiconductor laser mounting method of the present invention. FIG. 2 is a perspective view of a semiconductor laser in a conventional semiconductor laser mounting method. (lO])...AuSn alloy layer (102)...Au layer (103)...Cr layer (104)...electrode (1051...Semiconductor laser crystal or above Supplier Agent of Seiko Epson Corporation Person Patent Attorney Mogami Tsutomu (Iti! 1 person) / ρi
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Claims (1)

[Claims] A semiconductor laser comprising the steps of sequentially laminating chromium, gold, and gold-tin alloys as fusion metals on the electrode surface of a semiconductor laser crystal, and die-bonding the semiconductor laser to a heat sink via the fusion metals. How to implement.