JPH01235343A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPH01235343A JPH01235343A JP63064205A JP6420588A JPH01235343A JP H01235343 A JPH01235343 A JP H01235343A JP 63064205 A JP63064205 A JP 63064205A JP 6420588 A JP6420588 A JP 6420588A JP H01235343 A JPH01235343 A JP H01235343A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- lead
- thin wire
- metal thin
- pressed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000008188 pellet Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000000151 deposition Methods 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
の１
本発明は金属細線を金属部材の素地にワイヤボンディン
グする方法に関する。DETAILED DESCRIPTION OF THE INVENTION (1) The present invention relates to a method of wire bonding a thin metal wire to a base of a metal member.
従】Ｊ口支蓋−
半導体装置は一般に基板上に半導体ペレｙ）をマウント
し、半導体ペレット上の電極と半導体ペレット近傍に配
置したリードとを金属細線で接続し、半導体ペレｙ）を
含む主要部を外装被覆した後、リードを連結したタイバ
を切断除去して個々の半導体装置に分解され製造される
。Semiconductor devices generally include a semiconductor pellet (y) mounted on a substrate, and an electrode on the semiconductor pellet and a lead placed near the semiconductor pellet are connected with a thin metal wire. After covering the parts, the tie bars connecting the leads are cut and removed, and the semiconductor devices are disassembled and manufactured into individual semiconductor devices.
従来、金属細線として細線か用いられていたが、高価で
あることから、アルミニウムや銅などが用いられるよう
になっている。一方、ペレットマウント部やリードには
ペレットのマウント性（半田付は性）を良好にする目的
で、あるいはワイヤボンディング性を良好にする目的で
、要部に金メツキなどを実施していたが、メツキ材料費
たけでなく工数かかかることから金属素地に直接半導体
ペレットを半田付けしたり、金属細線をボンディングす
るようにしている。Traditionally, thin metal wires have been used, but due to their high cost, aluminum, copper, etc. are now being used. On the other hand, gold plating was applied to the main parts of the pellet mount and leads in order to improve pellet mountability (solderability) or wire bondability. Since plating requires not only material costs but also man-hours, semiconductor pellets are soldered directly to the metal base, or thin metal wires are bonded.
金属細線をボンディングする方法として一般的に超音波
ボンディング法が知られている。Ultrasonic bonding is generally known as a method for bonding thin metal wires.
また超音波ボンディングの際にボンディング部を加熱す
るとボンディング性が向上することも知られている。It is also known that heating the bonding part during ultrasonic bonding improves bonding performance.
Ｂ （よ− 。B (Yo-).
しかしながら、金属細線として廉価なアルミニウム線を
、リードフレームとして銅素地のリードフレームをそれ
ぞれ用いた場合、加熱超音波ワイヤボンディング法では
加熱されたがイドレールＬをリードフレームか移動して
ボンディングポジ／コンに達するまでにボンディング予
定部表面か酸化し、ワイヤボンディングの際に超音波移
動により酸化膜を剥離してもアルミニウムと銅素地の間
に酸化物の欠片が介在し、加熱すると却ってボンディン
グ強度が低下するという問題があった。However, when an inexpensive aluminum wire is used as the thin metal wire and a copper-based lead frame is used as the lead frame, the idle rail L is heated in the heated ultrasonic wire bonding method, but the idle rail L is moved from the lead frame to the bonding positive/con. By the time the bonding area is reached, the surface of the area to be bonded will be oxidized, and even if the oxide film is peeled off by ultrasonic movement during wire bonding, oxide fragments will remain between the aluminum and copper base, and heating will actually reduce the bonding strength. There was a problem.
２ た の
本発明は上記問題点を解決するために提案されたもので
、金属細線を金属部材素地に押圧し、押圧部に超音波を
付与するに先たって、抑圧部を局部加熱することを特徴
とするワイヤボンディング方法を提供する。2. The present invention was proposed to solve the above-mentioned problems, and involves pressing a thin metal wire against a metal member base and locally heating the suppressing part before applying ultrasonic waves to the pressed part. A wire bonding method with features is provided.
ＬＩ
以トに本発明の実施例を第１図乃至第 図から説明する
。図において１は半導体ペレット２をマウントした放熱
板、３は複数のリード３ａ、３ｂを一端を半導体ペレッ
ト２の近傍に配設し、図示しないがリード３ａ、３ｂの
各中間部を連結して一体化したリードフレーム（金属部
材）で、放熱板１は図示しないかリードフレーム３に連
結されている。LI Hereinafter, embodiments of the present invention will be explained with reference to FIGS. In the figure, 1 is a heat dissipation plate on which a semiconductor pellet 2 is mounted, and 3 is a plurality of leads 3a and 3b, one end of which is disposed near the semiconductor pellet 2, and although not shown, the intermediate parts of the leads 3a and 3b are connected to form an integral body. The heat dissipation plate 1 is connected to a lead frame 3 (not shown).
４はワイヤボンディングポジションで放熱板１及びリー
ドフレーム３のリード内端部を支持するガイドレールで
、このガイドレール４には放熱板ＩＦの半導体ペレット
２の加熱を主目的としたヒータ（図示せず）が埋込まれ
ている。５はガイドレール４のワイヤボンディングポジ
ションでリード３ａ 、３ｂのボンディング予定部表面
に一端が対向する光ファイバ、６は金属細線７をガイド
するキャピラリで、−Ｌ下動及び水平動し、超音波振動
が付与される。８は加熱源としての赤外線ランプで、ガ
イドレール５の下方に配置されている。この赤外線ラン
プ８から放出された光はプリズム９により分岐されさら
にプリズム１０．１１によっテ光ファイバ５．５にガイ
ドされる。この光路中にレンズ（図示せず）が挿入され
リード３ａ、３ｂ裏面に集光するように設定されている
。■２はキャピラリ６と連動しボンディング予定のリー
ドにのみ光を透過させるンヤノタを示す。Reference numeral 4 denotes a guide rail that supports the inner ends of the leads of the heat sink 1 and the lead frame 3 at the wire bonding position.This guide rail 4 is equipped with a heater (not shown) whose main purpose is to heat the semiconductor pellet 2 of the heat sink IF. ) is embedded. 5 is an optical fiber at the wire bonding position of the guide rail 4, one end of which faces the surface of the bonding area of the leads 3a and 3b; 6 is a capillary that guides the thin metal wire 7; -L moves downward and horizontally, and generates ultrasonic vibration; will be granted. Reference numeral 8 denotes an infrared lamp as a heating source, which is arranged below the guide rail 5. The light emitted from the infrared lamp 8 is split by a prism 9 and further guided to an optical fiber 5.5 by a prism 10.11. A lens (not shown) is inserted into this optical path and is set to focus the light on the back surfaces of the leads 3a and 3b. ② 2 indicates a wire that works in conjunction with the capillary 6 to transmit light only to the leads to be bonded.
以下にこの動作を説明する。先ず第１図に示すようにボ
ンディングポジンヨンに放熱板１を移動させると、半導
体ペレット２はボンディングに好適な温度に昇温する。This operation will be explained below. First, as shown in FIG. 1, when the heat sink 1 is moved to the bonding position, the temperature of the semiconductor pellet 2 is raised to a temperature suitable for bonding.
この間’） −ト３ａ、３ｂは表面か酸化する温度以下
に保たれる。この位置でキャピラリ６が下降し金属細線
７の一端をペレット２にボンディングする。次にキャピ
ラリ６をリード３ａの上方に移動させ、金属細線７の中
間をリード３ａ−４１に押圧する。この時にはキャピラ
リ６には超音波は付与されていない。During this time, the surfaces of the plates 3a and 3b are kept at a temperature below oxidation. At this position, the capillary 6 descends to bond one end of the thin metal wire 7 to the pellet 2. Next, the capillary 6 is moved above the lead 3a, and the middle of the thin metal wire 7 is pressed against the lead 3a-41. At this time, no ultrasonic waves are applied to the capillary 6.
金属細線７をリード３ａに押圧した状態では金属細線７
はリード３ａの素地に直接接続している。When the thin metal wire 7 is pressed against the lead 3a, the thin metal wire 7
is directly connected to the base of the lead 3a.
次にシャッタ１２により赤外光をリード３ａ［而に導き
押圧部を局部的に加熱する。加熱後リードフレーム３ａ
の表面は酸化し、第２図に示すように押圧部きんぼうに
近傍に酸化ＢＩ３が形成されるが、加熱開始と同時にキ
ャピラリ６に超音波を付与することにより金属細線７は
リード３ａ素地と接触したままボンディングされる。ボ
ンディング完了後、シャッタ１２を閉じ、リード３ａの
温度をドけ、 し金属細線７を切断し次のボンディン
グの準備をして上記動作を繰返し、他のリードへのボン
ディングを行う。Next, the shutter 12 directs the infrared light to the lead 3a and locally heats the pressing part. Lead frame 3a after heating
The surface of the lead 3a is oxidized and oxidized BI3 is formed near the pressing part as shown in FIG. Bonded while still in contact. After the bonding is completed, the shutter 12 is closed, the temperature of the lead 3a is lowered, and the thin metal wire 7 is cut to prepare for the next bonding, and the above operation is repeated to bond to other leads.
尚、本発明は上記実施例にのみ限定されることなく、例
えば加熱源は赤外線ランプだけでな（、レーザ光源でも
よい。It should be noted that the present invention is not limited to the above-mentioned embodiments; for example, the heating source is not limited to an infrared lamp (or may be a laser light source).
また、キャピラリの代わりにウェッジを用いることもで
きる。Also, a wedge can be used instead of a capillary.
光１と塾未−
以上のように本発明に寄ればボンディング性を良好にす
るためのメツキが施されていない金属部材でも、金属細
線を金属部材の素地に押圧した状態で加熱超音波ボンデ
ィングすることによりボンディング界面に酸化物が介在
せず、強固なボンディングが可能である。Hikari 1 and Juku Mi - As described above, according to the present invention, even metal parts that have not been plated to improve bonding properties can be bonded by heating and ultrasonic waves while the thin metal wire is pressed against the base of the metal part. As a result, no oxide is present at the bonding interface, and strong bonding is possible.
またボンディング時の加熱は未ボンディング部に及ばな
いから、均質なボンディングが可能である。Furthermore, since the heating during bonding does not reach the unbonded portion, homogeneous bonding is possible.
第１図は本発明の詳細な説明するためのワイヤボンディ
ング装置の断面図、第２図はボンディング装置を説明す
るための要部拡大断面図である。
３・・・金属部材（リードフレーム）、７・・・金属細
線。
Ｃ（
腑FIG. 1 is a cross-sectional view of a wire bonding apparatus for explaining the present invention in detail, and FIG. 2 is an enlarged cross-sectional view of a main part for explaining the bonding apparatus. 3... Metal member (lead frame), 7... Metal thin wire. C( sense
Claims (1)
付与するに先だって、押圧部を局部加熱することを特徴
とするワイヤボンディング方法。A wire bonding method characterized by pressing a thin metal wire against a metal member base and locally heating the pressing part before applying ultrasonic waves to the pressing part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63064205A JPH01235343A (en) | 1988-03-16 | 1988-03-16 | Wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63064205A JPH01235343A (en) | 1988-03-16 | 1988-03-16 | Wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01235343A true JPH01235343A (en) | 1989-09-20 |
Family
ID=13251337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63064205A Pending JPH01235343A (en) | 1988-03-16 | 1988-03-16 | Wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01235343A (en) |
-
1988
- 1988-03-16 JP JP63064205A patent/JPH01235343A/en active Pending
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