JPH0122729B2 - - Google Patents
Info
- Publication number
- JPH0122729B2 JPH0122729B2 JP59005863A JP586384A JPH0122729B2 JP H0122729 B2 JPH0122729 B2 JP H0122729B2 JP 59005863 A JP59005863 A JP 59005863A JP 586384 A JP586384 A JP 586384A JP H0122729 B2 JPH0122729 B2 JP H0122729B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- ion
- source
- crucible
- source material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 44
- 150000002500 ions Chemical class 0.000 description 35
- 238000010884 ion-beam technique Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- -1 compound ions Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electron Sources, Ion Sources (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/493,871 US4424104A (en) | 1983-05-12 | 1983-05-12 | Single axis combined ion and vapor source |
| US493871 | 1983-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208841A JPS59208841A (ja) | 1984-11-27 |
| JPH0122729B2 true JPH0122729B2 (en, 2012) | 1989-04-27 |
Family
ID=23962042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59005863A Granted JPS59208841A (ja) | 1983-05-12 | 1984-01-18 | 蒸気流及びイオン流発生装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4424104A (en, 2012) |
| EP (1) | EP0134399B1 (en, 2012) |
| JP (1) | JPS59208841A (en, 2012) |
| DE (1) | DE3477711D1 (en, 2012) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4690744A (en) * | 1983-07-20 | 1987-09-01 | Konishiroku Photo Industry Co., Ltd. | Method of ion beam generation and an apparatus based on such method |
| CH664163A5 (de) * | 1985-03-01 | 1988-02-15 | Balzers Hochvakuum | Verfahren zum reaktiven aufdampfen von schichten aus oxiden, nitriden, oxynitriden und karbiden. |
| US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| DE3832693A1 (de) * | 1988-09-27 | 1990-03-29 | Leybold Ag | Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe |
| JPH089774B2 (ja) * | 1990-06-25 | 1996-01-31 | 三菱電機株式会社 | 薄膜形成装置 |
| GB2261226B (en) * | 1991-11-08 | 1994-10-26 | Univ Hull | Deposition of non-conductive material |
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| DE19600993A1 (de) * | 1995-01-13 | 1996-08-08 | Technics Plasma Gmbh | Vorrichtung und Verfahren zur anodischen Verdampfung eines Materials mittels einer Vakuumlichtbogenentladung |
| US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
| FR2825379B1 (fr) * | 2001-05-29 | 2004-07-16 | Addon | Equipements d'epitaxie par jet moleculaire |
| GB0128913D0 (en) * | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
| JP4980866B2 (ja) * | 2007-10-05 | 2012-07-18 | 日本電子株式会社 | 膜形成装置 |
| JP4428467B1 (ja) * | 2008-08-27 | 2010-03-10 | 日新イオン機器株式会社 | イオン源 |
| CN113005404B (zh) * | 2021-02-23 | 2022-12-06 | 中国科学院空天信息创新研究院 | 碱金属源的制备装置及制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2600151A (en) | 1946-08-15 | 1952-06-10 | John G Backus | Ion producing mechanism |
| US2715692A (en) | 1946-09-20 | 1955-08-16 | Alvin B Cardwell | Ion producing apparatus |
| CH425015A (de) * | 1965-09-22 | 1966-11-30 | Balzers Patent Beteilig Ag | Anordnung zur Behandlung der Oberfläche eines Körpers mit Ionen |
| GB1154379A (en) | 1965-12-30 | 1969-06-04 | Atomic Energy Authority Uk | Improvements in or relating to Cold-Cathode Discharge Devices |
| US3428546A (en) * | 1966-09-27 | 1969-02-18 | Atomic Energy Commission | Apparatus for vacuum deposition on a negatively biased substrate |
| DE1900569C3 (de) | 1969-01-07 | 1976-01-08 | Varian Mat Gmbh, 2800 Bremen | Festkörper-Ionenquelle |
| US3583361A (en) | 1969-12-18 | 1971-06-08 | Atomic Energy Commission | Ion beam deposition system |
| US4054810A (en) | 1971-07-06 | 1977-10-18 | Varian Mat Gmbh | Field emission ion source having heated anode |
| FR2165265A5 (en, 2012) | 1971-12-23 | 1973-08-03 | Thomson Csf | |
| US3756193A (en) | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
| JPS542066B2 (en, 2012) | 1974-03-25 | 1979-02-01 | ||
| US3974059A (en) | 1974-10-03 | 1976-08-10 | Yoichi Murayama | High vacuum ion plating device |
| US4217855A (en) | 1974-10-23 | 1980-08-19 | Futaba Denshi Kogyo K.K. | Vaporized-metal cluster ion source and ionized-cluster beam deposition device |
| US4170662A (en) | 1974-11-05 | 1979-10-09 | Eastman Kodak Company | Plasma plating |
| US3913320A (en) | 1974-11-13 | 1975-10-21 | Ion Tech Inc | Electron-bombardment ion sources |
| US4082636A (en) | 1975-01-13 | 1978-04-04 | Sharp Kabushiki Kaisha | Ion plating method |
| US4016389A (en) | 1975-02-21 | 1977-04-05 | White Gerald W | High rate ion plating source |
| US4039416A (en) | 1975-04-21 | 1977-08-02 | White Gerald W | Gasless ion plating |
| JPS523583A (en) | 1975-06-27 | 1977-01-12 | Toshinori Takagi | Crystal film forming process |
| DE2644208C3 (de) | 1976-09-30 | 1981-04-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage |
| CH631743A5 (de) | 1977-06-01 | 1982-08-31 | Balzers Hochvakuum | Verfahren zum aufdampfen von material in einer vakuumaufdampfanlage. |
| JPS581186B2 (ja) | 1977-12-13 | 1983-01-10 | 双葉電子工業株式会社 | イオンプレ−テイング装置 |
| US4250009A (en) * | 1979-05-18 | 1981-02-10 | International Business Machines Corporation | Energetic particle beam deposition system |
| US4367429A (en) | 1980-11-03 | 1983-01-04 | Hughes Aircraft Company | Alloys for liquid metal ion sources |
-
1983
- 1983-05-12 US US06/493,871 patent/US4424104A/en not_active Expired - Lifetime
-
1984
- 1984-01-18 JP JP59005863A patent/JPS59208841A/ja active Granted
- 1984-04-25 EP EP84104623A patent/EP0134399B1/en not_active Expired
- 1984-04-25 DE DE8484104623T patent/DE3477711D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0134399B1 (en) | 1989-04-12 |
| EP0134399A3 (en) | 1986-10-29 |
| US4424104A (en) | 1984-01-03 |
| JPS59208841A (ja) | 1984-11-27 |
| DE3477711D1 (en) | 1989-05-18 |
| EP0134399A2 (en) | 1985-03-20 |
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