JPH01220300A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- JPH01220300A JPH01220300A JP63046013A JP4601388A JPH01220300A JP H01220300 A JPH01220300 A JP H01220300A JP 63046013 A JP63046013 A JP 63046013A JP 4601388 A JP4601388 A JP 4601388A JP H01220300 A JPH01220300 A JP H01220300A
- Authority
- JP
- Japan
- Prior art keywords
- counter
- nonvolatile memory
- write
- semiconductor memory
- count value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000012544 monitoring process Methods 0.000 claims abstract description 7
- 230000002411 adverse Effects 0.000 abstract 1
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電気的に消去可能な不揮発性半導体メモリに関
し、特にその書き込み回数による寿命を外部よりモニタ
する機能を有するメモリに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrically erasable nonvolatile semiconductor memory, and more particularly to a memory having a function of externally monitoring its lifespan based on the number of writes.
従来、この種の不揮発性半導体メモリは消去回数、書き
込み回数に制限があるが、外部から知る手段がなかった
。Conventionally, this type of non-volatile semiconductor memory has a limit on the number of times it can be erased and written, but there was no way to know this from the outside.
従って実際に使用して不具合が生じるまでわからないと
いう欠点がある6
本発明の目的は前記課題を解決した不揮発性半導体メモ
リを提供することにある。Therefore, there is a drawback that a problem is not known until it occurs during actual use.6 An object of the present invention is to provide a nonvolatile semiconductor memory that solves the above problems.
上記目的を達成するため、本発明の不揮発性半導体メモ
リにおいては、書き込み回数を計数する計数器と、該計
数値を記憶する不揮発性記憶部と、外部から所定の計数
値を超えたことをモニタする手段とを含むものである。In order to achieve the above object, the non-volatile semiconductor memory of the present invention includes a counter that counts the number of writes, a non-volatile storage section that stores the counted value, and an external monitor that monitors whether a predetermined counted value has been exceeded. and means to do so.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例のブロック図である。FIG. 1 is a block diagram of one embodiment of the present invention.
1は本来の不揮発性メモリ(記憶部)、2は書き込み回
数を計数するカウンタ、3はカウンタ2の出力を記憶す
る不揮発性メモリ(記憶部)で、その出力32はカウン
タ2の入力21に接続されている。1 is the original non-volatile memory (storage unit), 2 is a counter that counts the number of writes, 3 is a non-volatile memory (storage unit) that stores the output of counter 2, and its output 32 is connected to the input 21 of counter 2. has been done.
また4は消去回路、5はコンパレータである。カウンタ
2の出力22は不揮発性メモリ3の入力31と同時にコ
ンパレータ5の入力52に接続されている。Further, 4 is an erase circuit, and 5 is a comparator. The output 22 of the counter 2 is connected simultaneously to the input 31 of the non-volatile memory 3 and to the input 52 of the comparator 5.
ただし1本数はn本とする。そして不揮発性メモリ3の
消去人力33には消去回路4の出力42が接続され、消
去回路4の入力41は内部端子に接続されている。However, the number of pieces is n. The output 42 of the erasing circuit 4 is connected to the erasing power 33 of the nonvolatile memory 3, and the input 41 of the erasing circuit 4 is connected to an internal terminal.
コンパレータ5の他の入力51にはこの不揮発性メモリ
の限界保証値を設定しておく。コンパレータ5の出力は
、外部から所定の計数値をモニタするための外部出力端
子23に接続しである。The other input 51 of the comparator 5 is set with a guaranteed limit value of this nonvolatile memory. The output of the comparator 5 is connected to an external output terminal 23 for externally monitoring a predetermined count value.
次にその動作について説明する。Next, its operation will be explained.
まず内部端子41から消去回路4を駆動し、不揮発性メ
モリ3を初°期設定する。これは−回のみ実施するので
、外部出力端子23に出して誤操作により再び消去する
ことを避けることが望ましい。そして不揮発性メモリ1
を消去するときも不揮発性メモリ3は消去されない。First, the erase circuit 4 is driven from the internal terminal 41 to initialize the nonvolatile memory 3. Since this is performed only - times, it is desirable to output the data to the external output terminal 23 to avoid erasing it again due to an erroneous operation. and non-volatile memory 1
Even when erasing the data, the nonvolatile memory 3 is not erased.
次に不揮発性メモリ3の出力(現在0に初期設定されて
いる)をカウンタ2にロードする。その後、不揮発性メ
モリ1を消去、書き込みを行うたびにカウンタ2を1回
づつアップする。然る後、電源がrOFF Jになるこ
とを検出した場合はカウンタ2の内容を不揮発性メモリ
3に書き込む。逆に電源が「ON」になることを検出し
たら、不揮発性メモリ3の内容をカウンタ2にロードす
る。後は同様にして不揮発性メモリ1を消去、書き込み
するたびに1回カウンタ2をアップする。このようにし
て不揮発性メモリ1に対する総書き込み回数、すなわち
累積書き込み回数が不揮発性メモリ3に記憶される。ま
た最新の累積書き込み回数はカウンタ2に入っているが
、この値が限界値を超えたとき、コンパレータ5の出力
が変化するので、この変化を出力端子23からモニタす
れば容易に外部から知ることができる。Next, the output of the non-volatile memory 3 (currently initialized to 0) is loaded into the counter 2. Thereafter, the counter 2 is incremented by one each time the nonvolatile memory 1 is erased or written. After that, when it is detected that the power becomes rOFF J, the contents of the counter 2 are written into the nonvolatile memory 3. Conversely, when it is detected that the power is turned on, the contents of the nonvolatile memory 3 are loaded into the counter 2. After that, the counter 2 is incremented once each time the nonvolatile memory 1 is erased or written in the same manner. In this way, the total number of writes to the nonvolatile memory 1, that is, the cumulative number of writes, is stored in the nonvolatile memory 3. The latest cumulative number of writes is stored in the counter 2, and when this value exceeds the limit value, the output of the comparator 5 changes, so by monitoring this change from the output terminal 23, you can easily know from the outside. Can be done.
以上説明したように本発明は、累積書き込み回数を超え
たことを出力端子からモニタすることにより電気的に有
効な書き込みであることを保証できる。As described above, the present invention can ensure that writing is electrically effective by monitoring from the output terminal whether the cumulative number of writes has been exceeded.
従って、実際に不良になる前に取り換え等の手を打つこ
とで事前に事故を防止できる効果を有する。Therefore, by taking measures such as replacing the product before it actually becomes defective, it is possible to prevent accidents in advance.
第1図は本発明の一実施例を示すブロック図である。 FIG. 1 is a block diagram showing one embodiment of the present invention.
Claims (1)
、書き込み回数を計数する計数器と、その計数値を記憶
する不揮発性記憶部と、外部から所定の計数値を超えた
ことをモニタする手段とを含むことを特徴とする不揮発
性半導体メモリ。1. In an electrically erasable non-volatile semiconductor memory, a counter that counts the number of writes, a non-volatile storage section that stores the counted value, and means for externally monitoring whether a predetermined counted value has been exceeded. A nonvolatile semiconductor memory characterized by comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63046013A JPH01220300A (en) | 1988-02-29 | 1988-02-29 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63046013A JPH01220300A (en) | 1988-02-29 | 1988-02-29 | Nonvolatile semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01220300A true JPH01220300A (en) | 1989-09-01 |
Family
ID=12735174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63046013A Pending JPH01220300A (en) | 1988-02-29 | 1988-02-29 | Nonvolatile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01220300A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04115398U (en) * | 1991-03-27 | 1992-10-13 | シヤープ株式会社 | flash memory |
JPH0527924A (en) * | 1991-07-12 | 1993-02-05 | Internatl Business Mach Corp <Ibm> | External storage system using semiconductor memory and control method thereof |
-
1988
- 1988-02-29 JP JP63046013A patent/JPH01220300A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04115398U (en) * | 1991-03-27 | 1992-10-13 | シヤープ株式会社 | flash memory |
JPH0527924A (en) * | 1991-07-12 | 1993-02-05 | Internatl Business Mach Corp <Ibm> | External storage system using semiconductor memory and control method thereof |
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