JPH01219155A - Laser vapor deposition apparatus - Google Patents

Laser vapor deposition apparatus

Info

Publication number
JPH01219155A
JPH01219155A JP63045101A JP4510188A JPH01219155A JP H01219155 A JPH01219155 A JP H01219155A JP 63045101 A JP63045101 A JP 63045101A JP 4510188 A JP4510188 A JP 4510188A JP H01219155 A JPH01219155 A JP H01219155A
Authority
JP
Japan
Prior art keywords
vapor deposition
ceramics
laser beam
laser
points
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63045101A
Other languages
Japanese (ja)
Inventor
Shigeru Adachi
茂 安達
Akimichi Takeda
明通 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63045101A priority Critical patent/JPH01219155A/en
Publication of JPH01219155A publication Critical patent/JPH01219155A/en
Pending legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To carry out the uniform vapor deposition of ceramics and to make an apparatus compact by dividing a laser beam to project the divided laser beams onto dissimilar positions in ceramics and also providing a means of moving a material to be subjected to vapor deposition. CONSTITUTION:A laser beam emitted from a laser generator 4 provided outside a vacuum chamber is alternately reflected by means of a beam splitter 5 or a reflecting mirror 6, respectively. The resulting reflected beams are focused through a condenser lens 7 for common use, respectively, passed through a window 8, and made incident alternately upon points A, B apart from each other by a proper distance in an axial direction on a ceramics 2, which the ceramics 2 is evaporated and vapor-deposited onto the surface of a material 3 to be subjected to vapor deposition. Then, the material 3 is moved in a direction orthogonal to a line connecting the points A, B or moved so that it describes a curve of circular-arc shape, etc., around the line connecting the points A, B. By this method, the nonuniformity of film thickness can be improved and equipment can be simplified.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば工具類等の被蒸着物にレーザビームを
用いてセラミックスを蒸着する装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for depositing ceramics onto an object to be deposited, such as tools, using a laser beam.

〔従来の技術〕[Conventional technology]

第4図は従来のレーザ蒸着装置(工業材料第35巻、第
9号、49頁)を示す断面図であり、チャンバ11内に
蒸発源である円柱状に成形したセラミックス12と被蒸
着物13とを所要の間隔を隔てて配置し、レーザ発振器
14から発せられたレーザビームを反射m16、集光レ
ンズ17、チャンバの窓18を経てセラミックス12の
周面に入射させ、セラミックス12を溶融蒸発せしめて
加熱された被蒸着物13の表面に蒸着せしめるようにな
っている。
FIG. 4 is a cross-sectional view showing a conventional laser evaporation apparatus (Industrial Materials Vol. 35, No. 9, p. 49), in which a ceramic 12 formed into a cylinder as an evaporation source and an object to be evaporated 13 are placed in a chamber 11. The laser beam emitted from the laser oscillator 14 is made incident on the circumferential surface of the ceramics 12 through the reflection m16, the condensing lens 17, and the chamber window 18, thereby melting and vaporizing the ceramics 12. The vapor is deposited on the surface of a heated object 13.

また第5図は電子ビームを用いた従来の一般的な蒸着装
置(工業材料第31巻、第12号、86頁)を示す縦断
面図であり、チャンバ21内の下部に蒸着物質22を、
またその上方に自公転治具24を用いて被蒸着物23を
夫々配設し、ヒータ29にて被蒸着物23を加熱しつつ
蒸着物質22に電子ビームを投射し、これを蒸発させて
被蒸着物23に均一に蒸着せしめるようになっている。
Furthermore, FIG. 5 is a vertical cross-sectional view showing a conventional general vapor deposition apparatus using an electron beam (Kogyo Materials Vol. 31, No. 12, page 86), in which a vapor deposition substance 22 is placed in the lower part of a chamber 21.
Moreover, the objects 23 to be vaporized are placed above the objects 23 using a rotating and revolving jig 24, and while the objects 23 to be vaporized are heated by the heater 29, an electron beam is projected onto the vapor deposition material 22 to evaporate it. The vapor deposition material 23 is made to be uniformly vapor-deposited.

自公転治具24は回転盤24aの周縁部寄りの位置に周
方向の複数個所に回転台24bを枢支して構成されてお
り、各回転台24bに被蒸着物23をセットし、回転盤
24aにて回転させつつ回転台24bを回転させて蒸着
物質22に対する相対位置を変化させて、セラミックの
均一な蒸着を行い得るようにしである。
The rotation/revolution jig 24 is constructed by pivotally supporting rotary tables 24b at multiple locations in the circumferential direction near the periphery of a rotary disk 24a.The object to be deposited 23 is set on each rotary table 24b, and The rotary table 24b is rotated while being rotated by the rotary plate 24a to change the relative position with respect to the vapor deposition substance 22, thereby making it possible to perform uniform vapor deposition of the ceramic.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで上述した如き従来装置にあっては、前者の場合
セラミックス12は回転せしめることによって溶融に伴
うセラミックス12自体の変形の影響を低減する構成が
採られているが、被蒸着物13は固定されており、被蒸
着物13の形状等によっては蒸着セラミックの厚さが不
均一になるという問題がある。また後者の装置にあって
は比較的膜厚の均一化が図れるものの自公転治具24を
用いるため設備が大型化し、設備コストが高くなるとい
う問題があった。
By the way, in the conventional apparatus as described above, in the former case, the ceramic 12 is rotated to reduce the effect of deformation of the ceramic 12 itself due to melting, but the deposition target 13 is fixed. However, there is a problem in that the thickness of the vapor-deposited ceramic becomes non-uniform depending on the shape of the object 13 to be vapor-deposited. Furthermore, although the latter device can achieve a relatively uniform film thickness, there is a problem in that the use of the revolving jig 24 increases the size of the equipment and increases the cost of the equipment.

本発明はかかる事情に鑑みなされたものであって、その
目的とするところは自公転治具を用いるまでもなく均一
なセラミック膜の蒸着成形を行い得、しかも安価で小型
化の容易なレーザ蒸着装置を提供するにある。
The present invention has been made in view of the above circumstances, and its purpose is to enable uniform vapor deposition of a ceramic film without using a revolving jig, and which is inexpensive and easy to miniaturize using laser vapor deposition. We are in the process of providing equipment.

〔課題を解決するための手段〕 本発明に係るレーザ蒸着装置は、レーザビームを少なく
とも2以上に分割し、各レーザビームをセラミックの異
なる位置に投射せしめる光学系と、前記被蒸着物を直線
又は回転移動させる手段とを具備する。
[Means for Solving the Problems] A laser vapor deposition apparatus according to the present invention includes an optical system that divides a laser beam into at least two parts and projects each laser beam onto different positions on a ceramic, and and means for rotationally moving it.

〔作用〕[Effect]

本発明にあっては、これによって蒸発源と被蒸着物との
相対的な位置変化を行うまでもなく複数のセラミックス
蒸発源からの蒸気によって被蒸着物表面に均一な厚さの
セラミック薄膜の成形が可能となる。
According to the present invention, a ceramic thin film having a uniform thickness can be formed on the surface of the object by vapor from a plurality of ceramic evaporation sources without changing the relative position between the evaporation source and the object to be evaporated. becomes possible.

〔実施例〕〔Example〕

以下本発明をその実施例を示す図面に基づき具体的に説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.

第1図は本発明に係るレーザ蒸着装置の模式図であり、
図中2は蒸発源である円柱形に形成されたセラミックス
、3は例えば金属、セラミ・ンク等からなる被蒸着物を
示している。
FIG. 1 is a schematic diagram of a laser vapor deposition apparatus according to the present invention,
In the figure, reference numeral 2 indicates a cylindrical ceramic material serving as an evaporation source, and reference numeral 3 indicates an object to be evaporated made of, for example, metal, ceramic, or the like.

セラミックス2、被蒸着物3は図示しないチャンバ内に
所要の間隔を隔てて、セラミックス2の周面が被蒸着物
3の表面に対向させた状態で配設されている。セラミッ
クス2はその軸心線図りに回転、並びに軸長方向への移
動可能に配設され、また被蒸着物3はセラミックス2の
軸長方向と直交する方向に往復移動可能に配設されてい
る。
The ceramic 2 and the object 3 to be evaporated are placed in a chamber (not shown) with a predetermined distance therebetween, with the peripheral surface of the ceramic 2 facing the surface of the object 3 to be evaporated. The ceramic 2 is arranged so that it can rotate along its axis and move in the axial direction, and the deposition target 3 is arranged so that it can reciprocate in a direction perpendicular to the axial direction of the ceramic 2. .

レーザ発振器4はチャンバの外部に配設されており、こ
のレーザ発振器4から発せられたレーザビームLBは光
学系を構成するビームスプリンタ5又は反射鏡6で交互
に反射され、兼用の集光レンズ7で集束された後、チャ
ンバの窓8を通してセラミックス2における軸長方向に
適長離れたA。
A laser oscillator 4 is disposed outside the chamber, and the laser beam LB emitted from the laser oscillator 4 is alternately reflected by a beam splinter 5 or a reflecting mirror 6 constituting an optical system, and is reflected by a condenser lens 7 which also serves as a condenser lens. A is focused at a suitable distance in the axial direction of the ceramic 2 through the window 8 of the chamber.

B点に交互に入射せしめられるようになっている。The beams are made to be incident on point B alternately.

第2図(イ)、(ロ)はレーザビームの分割態様を示す
説明図である。ビームスプリッタ5は円板を半割した形
状の反射板5aをレーザビームLBの伝送域中でモータ
Mにて所定の速度で回転させるよう構成されており、反
射板5aがレーザビームLBの伝送域内を横切る略A回
転の間はレーザビームLBを反射して直接集光レンズ7
に入射させ、また他のA回転の間は反射鏡6にて反射さ
れ、集光レンズ7に入射せしめられるようになっている
FIGS. 2(A) and 2(B) are explanatory diagrams showing how the laser beam is divided. The beam splitter 5 is configured to rotate a reflecting plate 5a in the shape of a half-disk by a motor M at a predetermined speed within the transmission range of the laser beam LB. During approximately A rotation across the
During the other A rotations, the light is reflected by the reflecting mirror 6 and is made to enter the condenser lens 7.

第3図は本発明装置によった場合の被蒸着物表面の蒸着
膜厚分布を示す説明図である。いまセラミックス2のA
点に投射されたレーザビームLBによって蒸発され、被
蒸着物3の表面に蒸着される蒸着膜の膜厚分布は一点鎖
線で示す如(A点と対応する被蒸着物3表面のA1点で
膜厚が最も大きく、ここから遠ざかるに従って漸次減少
してA。
FIG. 3 is an explanatory diagram showing the distribution of the thickness of the deposited film on the surface of the object to be deposited when the apparatus of the present invention is used. Now Ceramics 2 A
The film thickness distribution of the vapor deposited film evaporated by the laser beam LB projected onto the point and deposited on the surface of the vapor deposition object 3 is as shown by the dashed line (the film is evaporated at point A1 on the surface of the vapor deposition object 3 corresponding to point A). The thickness is the largest and gradually decreases as you move away from this point.

点を中心とする同心円状となる。一方セラミックス20
B点に投射されたレーザビームLBによって蒸発され、
被蒸着物3の表面に蒸着される蒸着膜の膜厚分布は二点
鎖線で示す如くB点と対応する被蒸着物3表面のB、点
で膜厚が最も大きく、ここから遠ざかるに従って漸次減
少して83点を中心とする同心円状となる。
They form concentric circles centered on the point. On the other hand, ceramics 20
It is evaporated by the laser beam LB projected at point B,
The film thickness distribution of the vapor deposited film deposited on the surface of the vapor deposition object 3 is as shown by the two-dot chain line.The film thickness is greatest at point B on the surface of the vapor deposition object 3 corresponding to point B, and gradually decreases as the distance from this point increases. This results in concentric circles centered on 83 points.

従ってA、B点に投射されたレーザビームLBによって
蒸発され、被蒸着物3の表面に蒸着される蒸着膜の膜厚
分布は前2者による膜厚の和である実線で示す如くにな
り、レーザビームLBの投射点であるA、B点を結ぶ方
向における膜厚の不均一性が大幅に改善されることとな
る。
Therefore, the film thickness distribution of the vapor deposited film evaporated by the laser beam LB projected at points A and B and deposited on the surface of the deposition target 3 is as shown by the solid line, which is the sum of the film thicknesses of the former two, The non-uniformity of the film thickness in the direction connecting points A and B, which are the projection points of the laser beam LB, is significantly improved.

そこで被蒸着物3をA、B点を結ぶ線と直交する方向、
即ち第1図に矢符で示す方向に直線的に移動させれば、
この方向における膜厚の不均一性も改善し得ることとな
る。
Therefore, move the deposition object 3 in a direction perpendicular to the line connecting points A and B,
That is, if you move it linearly in the direction shown by the arrow in Figure 1,
The non-uniformity of the film thickness in this direction can also be improved.

なお上述の実施例はレーザビームを分割手段としてビー
ムスプリッタを用いた場合につき説明したが、何らこれ
に限るものではなく、分割手段としてはハーフミラ−を
用いてもよく、また分割数も2分割以上何分割してもよ
い。
Although the above embodiment has been described using a beam splitter as the means for dividing the laser beam, the invention is not limited to this in any way; a half mirror may be used as the means for dividing the laser beam, and the number of divisions may be two or more. You can divide it into any number of parts.

また被蒸着物3の移動方向はセラミックス2に対するレ
ーザビームの入射点A、B点を結ぶ線と直交する方向に
直線移動させる場合につき説明したが、A、B点を結ぶ
線を中心とする円弧状、又は楕円状等の曲線運動を行わ
せることとしてもよい。
In addition, although the moving direction of the deposition target 3 has been explained in the case where it is moved in a straight line in the direction perpendicular to the line connecting the incident points A and B of the laser beam on the ceramic 2, It is also possible to perform a curved movement such as an arc shape or an elliptical shape.

〔発明の効果〕〔Effect of the invention〕

以上の如く本発明装置にあってはレーザビームを2以上
に分割してセラミックスの異なる位置に投射せしめて蒸
着を行わせるようにしであるから、被蒸着物に対する蒸
着膜厚の均一化が図り易く、それだけ蒸発源であるセラ
ミックスに対する被蒸着物の動作も単純化出来て設備が
簡略化され、コスト低減が図れるなど本発明は優れた効
果を奏するものである。
As described above, in the apparatus of the present invention, the laser beam is divided into two or more and is projected onto different positions on the ceramic to perform the vapor deposition, so that it is easy to achieve uniformity of the thickness of the vapor deposited film on the object to be vaporized. The present invention has excellent effects, such as simplifying the operation of the evaporation object relative to the ceramics that is the evaporation source, simplifying the equipment, and reducing costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明装置の模式図、第2図(イ)。 (ロ)はレーザビームの分割態様を示す説明図、第3図
は被蒸着物に対する蒸着膜厚分布を示す説明図、第4.
5図は夫々従来装置の模式図である。 2・・・セラミックス 3・・・被蒸着物4・・・レー
ザ発振器 5・・・ビームスプリンタ6・・・反射鎖 
7・・・集光レンズ 8・・・窓なお、図中、同一符号
は同一、又は相当部分を示す。 代理人   大   岩   増   雄見 1  Σ (ロ) 第 2  図 第 3 図 $4 図 第 57 手続補正書(自発) 1、事件の表示   特願昭63−45101 号2、
発明の名称 レーザ蒸着装置 3、補正をする者 事件との関係 特許出願人 住 所    東京都千代田区丸の内二丁目2番3号名
 称  (601)三菱電機株式会社代表者志岐守哉 4、代理人 住 所    東京都千代田区丸の内二丁目2番3号三
菱電機株式会社内 氏名 (7375)弁理士大岩増雄  ・(連絡先03
(213)3421特許部)  ・ 、7′5、補正の
対象 明細書の「発明の詳細な説明」の欄 6、補正の内容 明細書の第5頁3行目に「往復移動可能に配設されてい
る。」とあるを「直線移動可能に配設されている。」と
訂正する。
FIG. 1 is a schematic diagram of the device of the present invention, and FIG. 2 (A). (b) is an explanatory diagram showing how the laser beam is divided, FIG.
FIG. 5 is a schematic diagram of each conventional device. 2...Ceramics 3...Deposition object 4...Laser oscillator 5...Beam splinter 6...Reflection chain
7... Condensing lens 8... Window In the drawings, the same reference numerals indicate the same or corresponding parts. Agent Masu Oiwa Yumi 1 Σ (b) Figure 2 Figure 3 Figure $4 Figure 57 Procedural amendment (voluntary) 1. Indication of case Patent application No. 1988-45101 2.
Name of the invention: Laser vapor deposition device 3, relationship with the person making the amendment Patent applicant address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Moriya Shiki 4, Agent Address Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (7375) Masuo Oiwa, patent attorney (contact information 03)
(213) 3421 Patent Department) 7'5, "Detailed Description of the Invention" column 6 of the specification to be amended, page 5, line 3 of the specification of the contents of the amendment, "Arranged so as to be reciprocally movable" Correct the statement "It is arranged so that it can be moved in a straight line."

Claims (1)

【特許請求の範囲】 1、真空チャンバ内でセラミックにレーザビームを投射
して蒸発させ、これを被蒸着物表面に蒸着せしめるよう
にしたレーザ蒸着装置において、 レーザビームを少なくとも2以上に分割し、分割された
各レーザビームをセラミックの異なる位置に投射せしめ
る光学系と、前記被蒸着物を直線又は曲線移動させる手
段とを具備することを特徴とするレーザ蒸着装置。
[Claims] 1. A laser evaporation apparatus that projects a laser beam onto a ceramic in a vacuum chamber to evaporate it and deposit it on the surface of an object to be evaporated, comprising: dividing the laser beam into at least two parts; A laser vapor deposition apparatus comprising: an optical system for projecting each divided laser beam onto different positions on a ceramic; and means for moving the object to be deposited in a straight line or in a curve.
JP63045101A 1988-02-25 1988-02-25 Laser vapor deposition apparatus Pending JPH01219155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63045101A JPH01219155A (en) 1988-02-25 1988-02-25 Laser vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63045101A JPH01219155A (en) 1988-02-25 1988-02-25 Laser vapor deposition apparatus

Publications (1)

Publication Number Publication Date
JPH01219155A true JPH01219155A (en) 1989-09-01

Family

ID=12709899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63045101A Pending JPH01219155A (en) 1988-02-25 1988-02-25 Laser vapor deposition apparatus

Country Status (1)

Country Link
JP (1) JPH01219155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2300001A (en) * 1992-11-30 1996-10-23 Mitsubishi Electric Corp Thin film forming apparatus using plurality of lasers
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62192579A (en) * 1986-02-19 1987-08-24 Mitsubishi Electric Corp Ceramic coating device by laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62192579A (en) * 1986-02-19 1987-08-24 Mitsubishi Electric Corp Ceramic coating device by laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2300001A (en) * 1992-11-30 1996-10-23 Mitsubishi Electric Corp Thin film forming apparatus using plurality of lasers
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
GB2300001B (en) * 1992-11-30 1997-05-28 Mitsubishi Electric Corp Thin film forming apparatus using laser

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