JP2005298898A - Film deposition apparatus and method, optical component, and projection aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a film of the desired film thickness distribution on a substrate even when a plurality of targets or the like are provided. <P>SOLUTION: Thin film layers of different compositions are alternately laminated on a substrate W to complete a multilayer film by alternately depositing film deposition substances from first and second target units 33, 34 on the substrate W while rotating the substrate W by a substrate holder 21. In this case, film deposition is performed by allowing a mask 41 to constantly face the first and second target units 33, 34 and an ion beam source 35, so that the treatment by each of the units 33-35 becomes equivalent. In addition, a main center MC of the mask 41 is constantly projected on a center point CP of the rotating substrate W, so that a multilayer film ML deposited on the substrate W can be manufactured as designed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a film forming apparatus and method for forming a film on a substrate surface, an optical component formed using the same, and an exposure apparatus incorporating the optical component.

  A lens is mainly used as an optical element in the visible light region. However, since the refractive index of a substance is close to 1 in the X-ray wavelength region, a conventional lens does not function sufficiently as an optical element and cannot be used. For these reasons, a reflecting mirror is used as an optical element in the X-ray wavelength region. In particular, a multilayer film X-ray reflector (having an X-ray reflective multilayer film on the reflection surface) capable of reflecting X-rays incident in a state close to normal incidence with a relatively high reflectance is used. Yes.

  One application of this multilayer X-ray reflector is a projection exposure apparatus for semiconductor manufacturing. In the projection exposure apparatus, when the wavelength of the exposure light is shortened in order to improve the resolution, the allowable upper limit value of the aberration is accordingly reduced. In the case of an X-ray projection exposure apparatus that uses X-rays as exposure light, if the X-ray wavelength is, for example, 13 nm, the allowable upper limit of aberration is about 1 nm (rms). In particular, with respect to the multilayer film as the reflection surface of the X-ray reflecting mirror, errors are likely to accumulate because a large number of films are stacked, so that the film thickness distribution needs to be controlled with high accuracy.

  As a film-forming device for forming a multilayer film on an X-ray reflector, for example, a substrate holder that rotates at a position facing the target is placed, and a mask whose aperture ratio is changed by the substrate holder radial distance is installed in the vicinity of the substrate holder (See Patent Document 1). In such a film forming apparatus, the mask is manufactured to have an opening shape corresponding to each type of substrate so that the film thickness distribution on the substrate has a desired distribution. Further, in this film forming apparatus, in order to precisely control the opening shape of the mask, a variable shape correction plate is provided adjacent to the mask so that the opening shape can be finely adjusted.

Further, as another film forming apparatus, a substrate holder that rotates at a position facing the target is disposed, and a triangular mask (pointing toward the center of the substrate holder) that can move in the radial direction of the substrate holder in the vicinity of the substrate holder ( There is one in which a movable mask) is arranged. In such a film forming apparatus, a desired film thickness distribution can be obtained on the substrate by moving the mask in the radial direction while controlling the mask with respect to the substrate.
JP 2002-285330 A

  However, the film forming apparatus as described above is based on the premise that the substrate and the target face each other on a one-to-one basis. In the film forming apparatus in which a plurality of targets and the like are provided in parallel to the substrate, Such a problem arises.

  That is, in a film forming apparatus provided with a plurality of targets, the shadow portion formed when the film forming particles emitted from each target fly on the substrate is different for each target. There is a problem that the film thickness distribution is different. In particular, in the latter film forming apparatus using a triangular mask, since the mask has a shape having a vertex, it becomes a great obstacle when the film thickness is controlled near the center of the substrate by using the mask vertex. The above problems are less likely to occur when the substrate surface is flat and close to the mask because there is almost no shadow displacement, but when the substrate surface is curved (particularly concave), the entire substrate is masked. It is difficult to make them close to each other, and a multilayer film having a desired film thickness cannot be formed on the substrate.

  Accordingly, an object of the present invention is to provide a film forming apparatus and method capable of forming a film having a desired film thickness distribution on a substrate even in a film forming apparatus provided with a plurality of targets and the like. .

  It is another object of the present invention to provide an optical component manufactured using the film forming apparatus as described above, a projection exposure apparatus incorporating the same, and the like.

  In order to solve the above-described problem, a film forming apparatus according to a first aspect of the present invention includes a substrate holder that holds a substrate in a rotatable manner, and a plurality of processing substance sources that are respectively disposed at positions facing the substrate holder. An injection processing unit including a film forming material source as at least one of a plurality of processing substance sources, and a substrate surface processing by the plurality of processing substance sources, which are disposed in the vicinity of the surface of the substrate held by the substrate holder A mask having a narrow portion for controlling the distribution of states and a shadow of the narrowest point of the narrow portion of the mask on each of a plurality of processing material sources on the surface of the substrate held by the substrate holder And a mask holder that can move the mask so that it is projected onto the center of rotation.

  In the film forming apparatus, the shadow of the narrowest point of the narrow part of the mask is projected onto the rotation center on the surface of the substrate held by the substrate holder for each of the plurality of processing substance sources. Thus, even if the plurality of processing material sources are switched, the same processing can be performed on the substrate surface. That is, for example, when forming a multilayer film on a substrate by repeatedly forming a film with different materials while switching the processing material source, it becomes easy to match the film thickness distribution of each layer constituting the multilayer film. A high-performance optical element can be provided. When the mask is appropriately displaced with reference to the state in which the shadow of the narrowest point of the narrow part of the mask is projected onto the center of rotation on the substrate surface, the desired film thickness is formed on the substrate depending on how the mask is displaced. A distribution can be formed.

  Further, the film forming apparatus according to the second invention is the film forming apparatus according to the first invention, wherein the injection processing unit is provided with a plurality of film forming materials provided corresponding to a plurality of film forming materials as a plurality of processing substance sources. It includes a plurality of targets that are sources and at least one ion beam source. In this case, when a multilayer film is formed on a substrate by repeatedly forming a film with different materials while switching a processing substance source, surface treatment such as smoothing or modification is performed at an intermediate stage of film formation by an ion beam source. Therefore, higher quality film formation becomes possible.

  The film forming apparatus according to a third aspect of the present invention is the film forming apparatus according to the first or second aspect of the present invention, wherein the mask has a pair of opposed tapered portions with the tips at the narrowest point as narrow portions. In this case, a desired film thickness distribution can be formed on the substrate without displacing the mask with a mask whose aperture ratio is fixedly adjusted.

  A film forming apparatus according to a fourth aspect of the present invention is the film forming apparatus according to the third aspect of the present invention, wherein the mask holder has a mask moving means capable of rotating the mask around an axis parallel to the rotation axis of the substrate holder. In this case, by appropriately rotating the mask around the above-mentioned axis at an appropriate timing, the mask can be aligned with respect to each processing material source with reference to the rotation center on the substrate, and a film forming material or the like can be obtained. In this state, the light can be incident on the substrate.

  The film forming apparatus according to a fifth aspect of the present invention is the film forming apparatus according to the fourth aspect of the present invention, wherein the mask moving means rotates the mask around the rotation axis of the substrate holder, and the plurality of processing substance sources are provided on the substrate holder. Arranged around the rotation axis at substantially the same inclination angle, the finest point of the mask and the rotation axis of the substrate holder are separated by a predetermined distance. In this case, a plurality of processing material sources can be arranged with good symmetry around the rotation axis of the substrate, and each layer is formed under the same conditions when forming a multilayer film on the substrate while switching the processing material sources. It becomes easy to do.

  According to a sixth aspect of the present invention, there is provided the film forming apparatus according to any one of the first and second aspects, wherein the mask has a tapered portion with the narrowest point as a tip as the narrow width portion. In this case, a desired film thickness distribution is formed on the substrate by appropriately displacing the mask with reference to a state in which the shadow of the narrowest point of the narrow width portion of the mask is projected on the rotation center on the surface of the substrate. Can do.

  The film forming apparatus according to a seventh aspect is the film forming apparatus according to the sixth aspect, wherein the mask holder can move the mask with respect to the moving direction of two or more axes, and at least one direction of the moving direction of two or more axes. The mask can be moved during processing by the processing material source. In this case, the movement of the mask with respect to a plurality of processing substance sources and the movement of the mask during film formation can be performed by the same mechanism, and the apparatus structure can be simplified.

  According to an eighth aspect of the present invention, there is provided the film forming apparatus according to the seventh aspect of the present invention, wherein the mask holder has a mask moving means for moving the mask independently with respect to the biaxial movement direction. The first direction in which the mask is moved during processing is the radial direction of the substrate holder, and the remaining second direction in which the mask is moved is the tangential direction orthogonal to the first direction. In this case, two-dimensional movement of the mask can be achieved by the mask moving means for moving the mask in the radial direction of the substrate and the tangential direction of the outer periphery of the substrate.

  According to a ninth aspect of the present invention, there is provided the film forming apparatus according to the seventh aspect, wherein the mask holder has a mask moving means for moving the mask independently with respect to the biaxial movement direction, depending on the processing substance source. The first direction in which the mask is moved during processing is the radial direction of the substrate holder, and the remaining second direction in which the mask is moved is the rotational direction around the rotation axis of the substrate holder. In this case, the two-dimensional movement of the mask can be achieved by the mask moving means for moving the mask in the radial direction of the substrate and the rotation direction of the substrate.

  An optical component according to a tenth invention has an optical film formed by depositing a film forming material injected from a film forming material source using the film forming apparatus according to the first to ninth inventions.

  In the optical component, since the optical film is formed using the above-described film forming apparatus, the film thickness distribution and the like are precisely controlled, and the optical performance such as the imaging characteristics in the X-ray region can be enhanced.

  An optical component according to an eleventh aspect of the invention is an optical component having an optical film formed by using the film forming apparatus of the first to ninth aspects, wherein a plurality of processing substance sources are a plurality of film forming materials. The optical film is a multilayer film including a plurality of targets provided corresponding to the above and at least one ion beam source, and the optical film is stacked by film formation from the plurality of targets.

  In the optical component, since the optical film formed of the multilayer film is formed using the above-described film forming apparatus, the film thickness distribution and the like are precisely controlled, and the reflection characteristics and the like in the X-ray region can be enhanced.

  An image forming system for projection according to the twelfth aspect includes the optical component according to the tenth and eleventh aspects. In this case, good imaging can be performed in the imaging system in the X-ray region or the like.

  A projection exposure apparatus according to a thirteenth aspect of the invention is an apparatus for projecting and exposing a mask pattern image onto a substrate using a projection optical system, and an illumination optical system for illuminating the mask with exposure light, and tenth and eleventh aspects. A projection optical system including an optical component of the optical component of the invention and forming a pattern image of a mask on a substrate.

  In the projection exposure apparatus, since the projection optical system includes the above-described optical components and forms a mask pattern image on the substrate, high-performance projection exposure in the X-ray region or the like is possible.

  A projection exposure apparatus according to a fourteenth aspect of the invention is an apparatus for projecting and exposing a mask pattern image onto a substrate using a projection optical system, including the optical parts of the tenth and eleventh aspects of the invention, and exposing the mask with exposure light. An illumination optical system for illuminating and a projection optical system for forming a mask pattern image on a substrate are provided.

  In the above projection exposure apparatus, the illumination optical system includes the above-described optical components and illuminates the mask with exposure light, so that high-intensity and uniform illumination in the X-ray region or the like is possible, and high-precision projection exposure is possible. Become.

  In addition, a film forming method according to the fifteenth aspect of the present invention includes a step of disposing a plurality of processing substance sources including a film forming material source at a position facing a substrate holder that should hold the substrate in a rotatable manner, and a plurality of processing materials. A step of arranging a mask having a narrow portion for controlling the distribution of the processing state of the substrate surface by the material source by shielding, in the vicinity of the surface of the substrate held by the substrate holder, and for each of the plurality of processing material sources On the other hand, a step of moving the mask so that the shadow of the narrowest point of the narrow part of the mask is projected onto the rotation center on the surface of the substrate held by the substrate holder.

  In the film formation method, the mask is projected so that the shadow of the narrowest point of the narrow part of the mask is projected onto the rotation center on the surface of the substrate held by the substrate holder for each of the plurality of processing material sources. Therefore, even if a plurality of processing material sources are switched, the same processing can be performed on the substrate surface.

[First Embodiment]
The first embodiment of the present invention will be described below. FIG. 1 is a diagram conceptually illustrating a front structure of a film forming apparatus according to the first embodiment, and FIG. 2 is a diagram conceptually illustrating a planar structure of the film forming apparatus.

  The film forming apparatus 10 includes a substrate holder 21, an injection processing unit 31, a mask 41, a mask holder 51, and a control device 61. Of these, the substrate holder 21, the injection processing unit 31, the mask 41, and the mask holder 51 are housed in a vacuum container 71 that enables film formation and the like in a low-pressure inert gas atmosphere.

  Here, the substrate holder 21 holds a substrate W that is a base material of a mirror that is an optical element and rotates together with the substrate W, and a rotation mechanism 24 that rotates the holding member 23 around the rotation axis RA. Consists of.

  The substrate W is a base material for forming a concave mirror, for example, and is formed of glass such as quartz, silicon carbide, or the like. The upper surface US of the substrate W is a smooth and highly accurate concave surface that is depressed at the center by grinding or polishing. When an appropriate multilayer film is formed on the upper surface US, a concave mirror is formed.

  The holding member 23 has a chuck for fixing the substrate W, and the rotation axis RA of the substrate holder 21 passes through the center of the substrate W. That is, the substrate W on the holding member 23 rotates, that is, rotates around the rotation axis RA set so as to substantially coincide with the axis passing through the center point CP of the upper surface US.

  The rotation mechanism 24 rotates the holding member 23 at an appropriate timing and speed. During film formation, the holding member 23 and the substrate W are rotated at a constant speed by being driven by the rotation mechanism 24, so that the shadow of the fixed mask 41 is relative to the upper surface US of the substrate W about the rotation axis RA. Will rotate. Therefore, a film without unevenness in the circumferential direction can be formed on the upper surface US of the substrate W.

  The injection processing unit 31 includes three units as processing substance sources for injecting a processing substance such as a film forming material. Specifically, surface treatment is performed on the first and second target units 33 and 34 which are two film forming material sources for forming a thin film on the upper surface US of the substrate W, and the thin film being formed on the substrate W. An ion beam source 35 for performing the above. These target units 33 and 34 and the ion beam source 35 are arranged symmetrically with respect to the rotation axis RA of the substrate holder 21. That is, the angle formed between the axis P1 of the first target unit 33 and the rotation axis RA of the substrate holder 21 is equal to the angle formed between the axis P2 of the second target unit 34 and the rotation axis RA of the substrate holder 21. The angle formed between the axis P3 of the ion beam source 35 and the rotation axis RA of the substrate holder 21 is equal to the angle formed by the axes P1 and P2 of both target units 33 and 34 with respect to the rotation axis RA. Each axis P1, P2, P3 intersects with the rotation axis RA at one point, and this point coincides with the center point CP of the upper surface US of the substrate W.

  Each of the target units 33 and 34 incorporates different types of targets TA1 and TA2 made of different film forming materials, and generates particles of the film forming material. For example, a magnetron sputtering apparatus is provided mainly behind each of the targets TA1 and TA2, and plasma composed of inert gas ions is formed in front of the targets TA1 and TA2 by the magnetron sputtering apparatus. By the plasma self-bias, ions of the inert gas are accelerated and collide with the targets TA1 and TA2, and film formation particles made of atoms, molecules, or the like of the material corresponding to the targets TA1 and TA2 are formed. Such film-forming particles are ejected from the targets TA1 and TA2, fly substantially along the axes P1 and P2 and the periphery thereof, and enter the entire upper surface US of the substrate W relatively uniformly. As the pair of targets TA1 and TA2, for example, a combination of Ni / Ti can be used, and for example, a combination of Ni / C can be used. If the target units 33 and 34 are alternately operated at appropriate timing, a Ni / Ti multilayer film having a desired film thickness or a Ni / C multilayer film can be easily formed on the substrate W. That is, as shown in FIG. 3, the first thin film layer L1 and the second thin film layer L2 are alternately laminated on the substrate W in an appropriate fractional unit of wavelength to form a multilayer film ML of several to several hundred layers. To do. In this way, the multilayer film ML deposited on the substrate W is, for example, a concave multilayer film reflecting mirror that focuses, diverges, or simply reflects a desired light beam such as soft X-rays. can do.

  The magnetron sputtering apparatus incorporated in the above target units 33 and 34 can be replaced with various sputtering apparatuses such as a DC sputtering apparatus. Further, instead of the magnetron sputtering apparatus, a sputtering ion source that strikes the targets TA1 and TA2 from an oblique direction can be used. Furthermore, each target unit 33 and 34 can be replaced with, for example, an evaporation source of a vacuum deposition apparatus. In this case, the vertical relationship between the injection processing unit 31 and the substrate holder 21 is normally reversed.

  The ion beam source 35 is for ion beam polishing, draws an inert gas, and irradiates the upper surface US of the substrate W. That is, the ions of the inert gas exit the ion beam source 35, fly substantially along the axis P3, and enter the entire upper surface US of the substrate W relatively uniformly. Thus, the inert gas ions emitted from the ion beam source 35 smooth the surface of the thin film layer on the substrate W. The timing of operating the ion beam source 35 can be set at each stage of stacking the multilayer film ML on the upper surface US of the substrate W. For example, ion beam polishing can be performed on both thin film layers L1 and L2 constituting the multilayer multilayer film ML, and one thin film layer L1 or the other thin film layer L2 constituting the multilayer film ML is applied to the thin film layers L1 and L2. It is also possible to perform ion beam polishing only on the surface. As the ion beam source 35, a Kaufman ion source, a packet ion source, an ECR ion source, or the like can be used.

  The mask 41 is for partially shielding the film forming substance from the injection processing unit 31 side, and is close to the upper surface US of the substrate W held by the substrate holder 21 with respect to the upper surface US. Arranged almost in parallel. The mask 41 has such a shape that the vertices of a pair of triangles are butted together. That is, the mask 41 is composed of a pair of opposed tapered portions 41a and 41b, and in the narrow width portion NW that is a portion where the tapered portions 41a and 41b are abutted, the narrowest point where both tapered portions 41a and 41b are in contact at the tip, The width is the narrowest at the point MC. The apex of each of the taper portions 41a and 41b constituting the mask 41 does not need to be an acute angle, but is preferably an acute angle in view of the utilization efficiency of the film forming material. Further, the edges on both sides of each of the taper portions 41a and 41b do not need to be straight lines, and can be set to appropriate curves according to the purpose and application.

  The mask holder 51 includes a holding member 53 that holds the mask 41 and rotates together with the mask 41, and a rotation mechanism 54 that rotates the holding member 53 around a rotation axis RA common to the substrate holder 21.

  The holding member 53 fixes the mask 41 to the upper part, and holds the mask 41 and the rotation axis RA of the substrate holder 21 in a state in which they are aligned in a predetermined relationship in a plane.

  The rotation mechanism 54 is a mask moving unit formed by using a stepping motor or a slide mechanism, and rotates the holding member 53 at an appropriate timing. Along with this, the mask 41 also rotates above the substrate holder 21. The timing for rotating the mask 41 is when the three units constituting the injection processing unit 31 are switched. For example, when the processing is switched from the first target unit 33 to the ion beam source 35, the mask 41 is rotated 120 ° counterclockwise by the rotation mechanism 54. Further, when processing is performed by switching the operation from the second target unit 34 to the ion beam source 35, the rotation mechanism 54 rotates the mask 41 clockwise by 120 °. Further, when the processing is switched from the first target unit 33 to the second target unit 34, the mask 41 is rotated 120 ° clockwise by the rotation mechanism 54.

  FIG. 4 is a diagram illustrating a state in which the shadow of the narrow width portion NW of the mask 41 is projected onto the substrate W on the substrate holder 21, and FIG. 4A is an enlarged plan view. 4 (b) is an enlarged side view.

  As shown in FIG. 4B, due to the upper surface US of the substrate W being concave, the mask 41 and the upper surface US of the substrate W are separated by a certain distance. For this reason, the point MC where the width of the mask 41 is the thinnest is arranged at a position offset by a predetermined distance D from the rotation axis RA of the substrate holder 21. That is, in the state A in which the first target unit 33 is operated, the point MC where the width of the mask 41 is the thinnest is shifted by the predetermined distance D in the −Y direction from the rotation axis RA of the substrate holder 21. It is said. Here, the path on which the film-forming substance from the first target unit 33 is incident on the upper surface US of the substrate W is inclined along the axis P1, so that the main point MC of the mask 41 is the upper surface of the substrate W. Projected to the center point CP of the US. As a result, a pair of shadows SHa and SHb corresponding to the tapered portions 41a and 41b are formed on both sides in the ± Y direction across the center point CP on the substrate W. A point NP at which the shadow combining these shadows SHa and SHb becomes the thinnest is a vertex common to the shadows SHa and SHb, and coincides with the center point CP on the substrate W. Accordingly, as the substrate holder 21 rotates, the shadows SHa and SHb rotate relative to the substrate W about the center point CP on the substrate W (that is, the point NP at which the shadows SHa and SHb become thinnest). become. That is, the shadows SHa and SHb of the mask 41 are formed on the substrate W as if the first target unit 33 exists on the extended line of the rotation axis RA of the substrate holder 21, and rotates on the upper surface US of the substrate W. .

  The above is the description of the state A in which the first target unit 33 is operated. However, in the state B in which the second target unit 34 is operated, the mask 41 rotates from the state A by 120 °. At this time, the main point MC of the mask 41 moves around the center point CP along the circular locus TC. Also in this case, the point NP at which the shadow of the mask 41 in the state B becomes the smallest coincides with the center point CP on the substrate W. Therefore, as the substrate holder 21 rotates, the shadow of the mask 41 rotates relative to the substrate W around the center point CP on the substrate W (that is, the point NP where the shadow becomes the thinnest).

  Similarly, in the state C in which the ion beam source 35 is operated, the mask 41 is further rotated by 120 ° from the state B. At this time, the main point MC of the mask 41 moves around the center point CP along the circular locus TC. Also in this case, the point NP at which the shadow of the mask 41 in the state C becomes the smallest coincides with the center point CP on the substrate W. Therefore, as the substrate holder 21 rotates, the shadow of the mask 41 rotates relative to the substrate W about the center point CP on the substrate W (that is, the point NP where the shadow becomes the thinnest).

  Returning to FIG. 1, the control device 61 controls the overall operation of the film forming apparatus 10, and controls the operation timing of the substrate holder 21, the injection processing unit 31, the mask holder 51, and the like. It is adjusting.

  The operation of the apparatus according to the embodiment shown in FIGS. First, the substrate W is set on the substrate holder 21. Next, the mask holder 51 is operated to arrange the mask 41 so as to face any one of the units 33 to 35. That is, the point MC of the mask 41 is projected onto the center point CP on the substrate W with respect to the specific units 33 to 35 (for example, the first target unit 33). In this state, while the substrate W is rotated by the substrate holder 21 at an appropriate speed, the specific units 33 to 35 (for example, the first target unit 33) are appropriately operated to perform a film forming process or the like. Next, the mask holder 51 is operated to arrange the mask 41 so as to face the other units 33 to 35. That is, the point MC of the mask 41 is projected onto the center point CP on the substrate W with respect to the other units 33 to 35 (for example, the second target unit 34). In this state, while rotating the substrate W at an appropriate speed by the substrate holder 21, another unit 33 to 35 (for example, the second target unit 34) is appropriately operated to perform film forming processing, ion beam polishing, or the like. By repeating the processing as described above, the first and second thin film layers L1 and L2 are alternately stacked on the substrate W to complete the multilayer film ML. At this time, since the film is formed with the mask 41 always facing the units 33 to 35, that is, the first and second target units 33 and 34 and the ion beam source 35, the units 33 to 35 are used. Processing is equivalent. In addition, since the main point MC of the mask 41 is always projected onto the center point CP on the rotating substrate W, the multilayer film ML formed on the substrate W can be made as designed. That is, according to the film forming apparatus 10 of the present embodiment, it is possible to maintain high wavefront accuracy during light collection and divergence while freely increasing the reflectance of the multilayer film reflecting mirror.

[Second Embodiment]
Hereinafter, the film forming apparatus of the second embodiment will be described. The film forming apparatus of the second embodiment is obtained by changing the film forming apparatus 10 of the first embodiment shown in FIG. 1 and the like with respect to the shape and driving method of the mask 41, and the same portions are denoted by the same reference numerals. Duplicate explanation is omitted.

  FIG. 5 is a diagram conceptually illustrating the planar structure of the film forming apparatus according to the second embodiment. In the case of the film forming apparatus 110, the mask 141 includes one triangular tapered portion 141a and a handle 141c that supports the tapered portion 141a. The mask 141 is disposed substantially parallel to the upper surface US in a state of being close to the upper surface US of the substrate W. As is apparent from the drawing, the taper portion 141a of the mask 141 has the narrowest width of the mask 141 at the apex AP in the narrow width portion that is the tip portion of the taper portion 141a. The apex of each tapered portion 141a constituting the mask 141 is not limited to that shown in the figure, and can be set in various ways. Further, the edges on both sides of the tapered portion 141a do not have to be straight lines, and can be set to an appropriate curve according to the purpose and application.

  The mask holder 151 supports the handle 141c of the mask 141 as a mask moving means, and moves the tapered portion 141a in the radial direction of the substrate holder 21, that is, the substrate W, and the tapered portion 141a as the first driving device. 155 and a second drive device 156 that moves the substrate holder 21 in the tangential direction of the substrate W.

  The first drive unit 155 includes a remotely controlled stepping motor, a slide mechanism, and the like, and can finely move the mask 141 to be displaced to a desired position in the ± Y direction. The second driving device 156 also includes a remotely controlled stepping motor, a slide mechanism, and the like, and can finely move the mask 141 and displace it to a desired position in the ± X direction. That is, the first and second driving devices 155 and 156 allow the mask 141 to move two-dimensionally in the XY plane without changing its posture.

  In the state A in which the first target unit 33 is operated, the mask 141 is arranged with the solid line state as a reference position. At this time, the shadow of the apex AP of the mask 141 with respect to the first target unit 33 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position of the state A, the shadow of the mask 41 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In film formation performed while rotating the substrate W in this way, the mask 141 can be shifted two-dimensionally in the XY plane, so that the distribution of the film thickness deposited on the substrate W is set to a desired distribution. be able to. The trajectory for displacing the mask 141 from the solid reference position can be appropriately set according to the design of the multilayer film ML to be formed on the substrate W. Normally, a linear motion is performed in which the mask 141 reciprocates in the ± Y directions using only the first driving device 155.

  The above is the description about the state A in which the first target unit 33 is operated. However, in the state B in which the second target unit 34 is operated, the mask holder 151 is operated as appropriate, and the mask 141 is moved. Move from the position of the solid line to the new reference position of the dashed line. Accordingly, the shadow of the vertex AP of the mask 141 with respect to the second target unit 34 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position in the state B, the shadow of the mask 141 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In such film formation, the mask 141 is shifted two-dimensionally in the XY plane, whereby the film thickness distribution deposited on the substrate W can be set to a desired distribution. Normally, a linear motion is performed in which the mask 141 reciprocates in the ± Y directions using only the first driving device 155.

  Similarly, in the state C in which the ion beam source 35 is operated, the mask holder 151 is appropriately operated to move the mask 141 to the new reference position of the two-dot chain line from the one-dot chain line position. Thereby, the shadow of the apex AP of the mask 141 with respect to the ion beam source 35 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position of the state C, the shadow of the mask 141 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In such film formation, the mask 141 is shifted two-dimensionally in the XY plane, whereby the film thickness distribution deposited on the substrate W can be set to a desired distribution. Normally, a linear motion is performed in which the mask 141 reciprocates in the ± Y directions using only the first driving device 155.

  Also in the film forming apparatus 110 of the second embodiment, film formation is performed with reference to the position where the tip of the mask 141 is always properly arranged with respect to the first and second target units 33 and 34 and the ion beam source 35. Therefore, the processes by the units 33 to 35 are substantially equivalent. Further, the film thickness on the substrate W can be arbitrarily controlled by operating the mask holder 151 during film formation and displacing the mask 141 in the radial direction of the substrate holder 21, for example.

[Third Embodiment]
Hereinafter, the film forming apparatus of the third embodiment will be described. The film forming apparatus of the third embodiment is obtained by changing the film forming apparatus of the second embodiment with respect to the shape of the mask 141 and the driving method.

  FIG. 6 is a diagram conceptually illustrating the planar structure of the film forming apparatus of the third embodiment. In the case of the film forming apparatus 210, a mask holder 251 serving as a mask moving unit supports the handle 141c of the mask 141 and moves the tapered portion 141a in the radial direction of the substrate holder 21, that is, the substrate W; The taper part 141a is provided with the 1st drive device 155 and the 2nd drive device 256 which rotates the board | substrate holder 21, ie, the circumferential direction of the board | substrate W, with it.

  The second driving device 256 includes a remotely controlled stepping motor, a slide mechanism, and the like, and rotates the first driving device 155 that supports the mask 141 around the rotation axis RA of the substrate holder 21. In other words, by appropriately operating the first and second driving devices 155 and 256, the mask 141 is not only reciprocating in the radial direction moving toward and away from the rotation axis RA of the substrate holder 21, but also around the rotation axis RA. It is also possible to move around in a rotating direction.

  In the state A in which the first target unit 33 is operated, the mask 141 is arranged with the solid line state as a reference position. At this time, the shadow of the apex AP of the mask 141 with respect to the first target unit 33 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position of the state A, the shadow of the mask 41 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In the film formation performed while rotating the substrate W in this way, the mask 141 can be displaced in the radial direction of the substrate holder 21, so that the distribution of the film thickness deposited on the substrate W is set to a desired distribution. Can do.

  In the state B in which the second target unit 34 is operated, the mask holder 251 is appropriately operated, and the mask 141 is rotated clockwise by 120 ° to move from the position indicated by the solid line to a new reference position indicated by the one-dot chain line. . Accordingly, the shadow of the vertex AP of the mask 141 with respect to the second target unit 34 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position in the state B, the shadow of the mask 141 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In such film formation, the mask 141 is displaced in the radial direction of the substrate holder 21, so that the film thickness distribution deposited on the substrate W can be a desired distribution.

  Further, in the state C in which the ion beam source 35 is operated, the mask holder 251 is appropriately operated, and the mask 141 is rotated clockwise by 120 ° to a new reference position of the two-dot chain line from the position of the one-dot chain line. Move. Thereby, the shadow of the apex AP of the mask 141 with respect to the ion beam source 35 coincides with the center point CP on the substrate W. Therefore, when the mask 141 is fixed at the reference position of the state C, the shadow of the mask 141 is the substrate W with the shadow of the vertex AP projected onto the center point CP on the substrate W as the substrate holder 21 rotates. It will rotate relative to the top. In such film formation, the mask 141 is displaced in the radial direction of the substrate holder 21, so that the film thickness distribution deposited on the substrate W can be a desired distribution.

Also in the film forming apparatus 210 of the third embodiment, film formation is performed with reference to the position where the mask 141 is always directly facing the first and second target units 33 and 34 and the ion beam source 35. The processes by the units 33 to 35 are almost equivalent. Further, by moving the mask holder 251 during film formation and displacing the mask 141 in, for example, the radial direction of the substrate holder 21, the film thickness on the substrate W can be arbitrarily controlled.
[Fourth Embodiment]
FIG. 7 is a block diagram showing an X-ray exposure apparatus which is an example of a projection exposure apparatus in which an optical element such as a multilayer film reflecting mirror illustrated in FIG. 3 is incorporated as an optical component.

  This X-ray exposure apparatus mainly includes a soft X-ray light source S, a condenser C, illumination optical systems IR1 to IR4, a stage MST that supports a mask M, projection imaging optical systems PR1 to PR4, and a stage WST that supports a wafer WA. Etc.

  The soft X-ray light source S is provided with a laser light source L that generates laser light for plasma excitation, and a tube T that supplies a gas such as a target material such as xenon into the housing SC. By condensing the laser light from the laser light source L onto xenon emitted from the tip of the tube T, the target material in that portion is turned into plasma and emits soft X-rays. The capacitor C collects soft X-rays generated at the tip of the tube T. The soft X-rays that have passed through the capacitor C pass through the transmission window 320 while being converged, exit from the casing SC, and enter the collimator mirror CM. Note that, instead of the laser plasma light source as described above, emitted light from a discharge plasma light source, a SOR light source, or the like can be used.

  The illumination system optical elements IR1 to IR4 are constituted by reflection type optical inch IR1 and IR2, condenser mirror IR3 and the like. The illumination system optical elements IR1 to IR4 can uniformly illuminate the mask M with X-rays having a desired wavelength.

  Since there is no completely transparent substance in the X-ray wavelength region, a reflective mask is used as the mask M instead of a conventional transmissive mask.

The projection imaging optical systems PR1 to PR4 are composed of a plurality of multilayer film mirrors and the like. The circuit pattern formed on the mask M forms an image on the wafer WA coated with a resist by such projection imaging optical systems PR1 to PR4, and is transferred to the resist. Although X-rays are absorbed and attenuated by the atmosphere, the entire apparatus is covered with the vacuum chamber VC, and the optical path of the X-rays is maintained at a predetermined degree of vacuum (for example, 1.3 × 10 ⁻³ Pa or less). Thus, the attenuation of X-rays is reduced.

  In the fourth embodiment described above, the illumination optical system such as the condenser C, the collimator mirror CM, and the illumination system optical elements IR1 to IR4 is composed of a multilayer film optical element (for example, a multilayer film reflector) illustrated in FIG. Such an optical element is manufactured by the film forming apparatuses 10, 110, and 210 exemplified in FIGS.

  In the fourth embodiment, the mask M and the projection imaging optical systems PR1 to PR4 are also composed of multilayer optical elements (for example, multilayer reflectors) illustrated in FIG. 3 and the like. 1, the film forming apparatus 10, 110, 210 illustrated in FIGS.

  In the X-ray exposure apparatus of the present embodiment, optical components controlled with high reflectivity and high precision manufactured by the film forming apparatuses 10, 110, and 210 illustrated in FIGS. 1, 5, 6 and the like are used. Therefore, the illuminance unevenness in the exposure area is reduced, and a desired exposure accuracy can be achieved.

  Although the present invention has been described based on the above embodiments, the present invention is not limited to the above embodiments. For example, the positions where the first and second target units 33 and 34, the ion beam source 35, and the like are arranged can be changed as appropriate. Further, the distance for offsetting the main point MC of the mask 41 from the rotation axis RA of the substrate holder 21 and the distance for offsetting the apex AP of the mask 141 from the rotation axis RA of the substrate holder 21 are the first and second target units 33 and 34. The ion beam source 35 and the like can be appropriately changed according to the position where the ion beam source 35 is disposed.

It is a front structure figure of the film-forming apparatus concerning a 1st embodiment. It is a plane structure figure of the film-forming apparatus shown in FIG. It is a sectional side view explaining the multilayer-film reflective mirror formed with the film-forming apparatus shown in FIG. (A), (b) is the enlarged plan view and enlarged side view explaining the state where the shadow of the narrow part of a mask is projected on a board | substrate. It is a front structure figure of the film-forming apparatus concerning a 2nd embodiment. It is a front structure figure of the film-forming apparatus concerning a 3rd embodiment. It is a figure explaining the X-ray exposure apparatus which concerns on 4th Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus, 21 ... Substrate holder, 23 ... Holding member, 24 ... Rotation mechanism, 31 ... Injection processing part, 33 ... First target unit, 34 ... Second target unit, 35 ... Ion beam source, 41 ... Mask 41a, 41b ... taper part, 51 ... mask holder, 53 ... holding member, 54 ... rotating mechanism, 61 ... control device, 71 ... vacuum vessel, MC ... main point, CP ... central point, P1, P2, P3 ... axis, RA: Rotating shaft, SHa, SHb ... Shadow, TA1, TA2 ... Target, M ... Mask, L1 ... First thin film layer, L2: Second thin film layer, ML ... Multilayer film, US ... Upper surface, W ... Substrate

Claims (15)

A substrate holder for holding the substrate in a rotatable manner;
An injection processing unit having a plurality of processing substance sources respectively disposed at positions facing the substrate holder, and including a film forming material source as at least one of the plurality of processing substance sources;
A mask that is disposed near the surface of the substrate held by the substrate holder and has a narrow portion for controlling the distribution of the processing state of the substrate surface by the plurality of processing substance sources;
For each of the plurality of processing substance sources, the mask is projected so that the shadow of the narrowest point of the narrow part of the mask is projected onto the rotation center on the surface of the substrate held by the substrate holder. A film forming apparatus comprising a mask holder that can be moved.   The injection processing unit includes, as the plurality of processing substance sources, a plurality of targets that are a plurality of film forming material sources provided corresponding to a plurality of film forming materials, and at least one ion beam source. The film forming apparatus according to claim 1.   3. The film forming apparatus according to claim 1, wherein the mask has a pair of opposed tapered portions each having a tip attached to the narrowest point as the narrow width portion. .   4. The film forming apparatus according to claim 3, wherein the mask holder has a mask moving means capable of rotating the mask around an axis parallel to a rotation axis of the substrate holder.   The mask moving means rotates the mask around a rotation axis of the substrate holder, and the plurality of processing substance sources are arranged at substantially the same inclination angle around the rotation axis of the substrate holder; 5. The film forming apparatus according to claim 4, wherein the finest point of the mask and the rotation axis of the substrate holder are separated by a predetermined distance.   3. The film forming apparatus according to claim 1, wherein the mask has a taper portion having the narrowest point as a tip as the narrow width portion. 4.   The mask holder can move the mask with respect to two or more axes of movement directions, and can move the mask during processing by the processing substance source with respect to at least one direction of the two or more axes of movement directions. The film forming apparatus according to claim 6.   The mask holder has a mask moving means for moving the mask independently with respect to the moving direction of the two axes, and a first direction for moving the mask during processing by the processing material source is that of the substrate holder. 8. The film forming apparatus according to claim 7, wherein the remaining second direction in which the mask is moved in a radial direction is a tangential direction perpendicular to the first direction.   The mask holder has a mask moving means for moving the mask independently with respect to the moving direction of the two axes, and a first direction for moving the mask during processing by the processing material source is that of the substrate holder. 8. The film forming apparatus according to claim 7, wherein the second direction in which the mask is moved in the radial direction is a rotation direction around a rotation axis of the substrate holder.   An optical component having an optical film formed by depositing a film forming material injected from the film forming material source using the film forming apparatus according to claim 1. An optical component having an optical film formed by using the film forming apparatus according to any one of claims 1 to 9,
The plurality of processing substance sources include a plurality of targets provided corresponding to a plurality of film forming materials and at least one ion beam source, and the optical film is stacked by film formation from the plurality of targets. An optical component that is a multilayered film.   An imaging system for projection comprising the optical component according to any one of claims 10 and 11. An apparatus for projecting and exposing a mask pattern image on a substrate using a projection optical system,
An illumination optical system that illuminates the mask with exposure light;
A projection exposure apparatus comprising the optical component according to any one of claims 10 and 11, and a projection optical system that forms a pattern image of the mask on a substrate. An apparatus for projecting and exposing a mask pattern image on a substrate using a projection optical system,
An illumination optical system that includes the optical component according to claim 10 and that illuminates a mask with exposure light;
A projection exposure apparatus comprising: a projection optical system that forms a pattern image of the mask on a substrate. Arranging a plurality of processing substance sources including a film-forming material source at a position facing a substrate holder that should hold the substrate in a rotatable manner;
Disposing a mask having a narrow portion for controlling the distribution of the processing state of the substrate surface by the plurality of processing substance sources by shielding in the vicinity of the surface of the substrate held by the substrate holder;
For each of the plurality of processing substance sources, the mask is projected so that the shadow of the narrowest point of the narrow part of the mask is projected onto the rotation center on the surface of the substrate held by the substrate holder. And a step of moving the film.

Images