JPH01218032A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPH01218032A
JPH01218032A JP63043697A JP4369788A JPH01218032A JP H01218032 A JPH01218032 A JP H01218032A JP 63043697 A JP63043697 A JP 63043697A JP 4369788 A JP4369788 A JP 4369788A JP H01218032 A JPH01218032 A JP H01218032A
Authority
JP
Japan
Prior art keywords
pellet
bonding
wire bonding
stage
semiconductor pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63043697A
Other languages
Japanese (ja)
Inventor
Katsuo Takei
武井　勝男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63043697A priority Critical patent/JPH01218032A/en
Publication of JPH01218032A publication Critical patent/JPH01218032A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78743—Suction holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78743—Suction holding means
    • H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To execute a wire bonding operation by a method wherein a region composed of a protrusion or a film which has been insulated from an internal element and a wiring part of a semiconductor pellet is formed in the semiconductor pellet, the region is supported from the outside and the semiconductor pellet is fixed. CONSTITUTION:A semiconductor pellet 2 is fixed to a bonding stage 3 for pellet use via a pellet island 1. A wire bonding operation on the surface of the pellet 2 is completed. The bonded face of the pellet 2 and an inner lead 4 are reversed by using a mounting mechanism; the face is mounted on the stage 3 so as to face the stage 3. The island of the pellet 2 is vacuum-sucked; the pellet 2 is fixed to the stage 3; the wire bonding operation of the rear is executed. By this setup, the wire bonding operation is executed while the pellet 2 is fixed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ペレットのワイヤーボンディング方法に
関し、特に表裏両面に素子及び配線を有する半導体ペレ
ットのワイヤーボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for wire bonding semiconductor pellets, and more particularly to a method for wire bonding semiconductor pellets having elements and wiring on both the front and back sides.

〔従来の技術〕[Conventional technology]

従来、半導体ペレットの内部電極であるパッドと外部リ
ードを結線するためのワイヤーボンディング方法におい
ては、ワイヤーボンディングの前工程で第５図に示すよ
うにリードフレーム８のアイランド１０に接合剤９によ
り半導体ペレット２の裏面を接合しておき、ワイヤーボ
ンディング時においては、この半導体ペレット２を搭載
したフレーム８を第６図に示すようにボンディングステ
ージ１１上に固定しペレット２の表面にあるパッドとイ
ンナーリード４をワイヤー７にて結線するものであった
。Conventionally, in a wire bonding method for connecting a pad that is an internal electrode of a semiconductor pellet to an external lead, the semiconductor pellet is bonded to an island 10 of a lead frame 8 using a bonding agent 9 in a pre-wire bonding process as shown in FIG. The back surfaces of the semiconductor pellets 2 are bonded together, and during wire bonding, the frame 8 on which the semiconductor pellet 2 is mounted is fixed on the bonding stage 11 as shown in FIG. were connected by wire 7.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のワイヤーボンディング方法では、半導体
ペレット２の裏面がアイランド１０への接合に用いられ
ているため、表裏両面にウェハープロセスを施し、表裏
両面に素子及び配線を有するような半導体ペレットにつ
いては、ワイヤーボンディングができないという欠点が
ある。In the conventional wire bonding method described above, the back surface of the semiconductor pellet 2 is used for bonding to the island 10. Therefore, for semiconductor pellets that undergo wafer processing on both the front and back surfaces and have elements and wiring on both the front and back surfaces, The disadvantage is that wire bonding is not possible.

本発明の目的は前記課題を解決したワイヤーボンディン
グ方法を提供することにある。An object of the present invention is to provide a wire bonding method that solves the above problems.

〔発明の従来技術に対する相違点〕[Differences between the invention and the prior art]

上述した従来のワイヤーボンディング方法に対し、本発
明は表裏両面に素子及び配線を形成した半導体ペレット
の表裏両面にワイヤーボンディングを行うことができる
という相違点を有する。The present invention differs from the above-described conventional wire bonding method in that wire bonding can be performed on both the front and back sides of a semiconductor pellet on which elements and wiring are formed.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため、本発明のワイヤーボンディン
グ方法においては、半導体ペレットの片面もしくは両面
に半導体ペレットの内部素子及び配線とは絶縁された突
起もしくは膜よりなる領域を形成し、この領域を外部よ
り支持することにより半導体ペレットを固定してワイヤ
ーボンディングを行うものである。In order to achieve the above object, in the wire bonding method of the present invention, a region consisting of a protrusion or film insulated from the internal elements and wiring of the semiconductor pellet is formed on one or both sides of the semiconductor pellet, and this region is exposed from the outside. By supporting the semiconductor pellet, the semiconductor pellet is fixed and wire bonding is performed.

〔実施例〕〔Example〕

以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.

（実施例１） 第１図（ａ）〜（ト）は本発明の実施例１を工程順に示
す図である。(Example 1) FIGS. 1A to 1G are diagrams showing Example 1 of the present invention in order of steps.

本発明において、半導体ペレット２はその片面もしくは
両面に半導体ペレットの内部素子及び配線とは絶縁され
た突起もしくは膜を有し、またワイヤーボンディング装
置は半導体ペレット２の突起及び膜を支持することによ
り半導体ペレット２を固定するペレット用ボンディング
ステージ３を有し、半導体ペレットを加熱する図示しな
い加熱手段が上記ペレット用ボンディングステージ３に
設けられている。あるいは非接触にて半導体ペレット２
を加熱する加熱手段を有している。In the present invention, the semiconductor pellet 2 has a protrusion or film on one or both sides thereof that is insulated from the internal elements and wiring of the semiconductor pellet, and the wire bonding device supports the protrusion and film of the semiconductor pellet 2 to The pellet bonding stage 3 has a pellet bonding stage 3 for fixing the pellet 2, and a heating means (not shown) for heating the semiconductor pellet is provided on the pellet bonding stage 3. Or semiconductor pellet 2 without contact
It has a heating means for heating.

第１図（ａ）　、　（ｂ）　、　（ｃ）　、　（ｄ）　
、　（ｅ）　、　（ｆ）は本発明の実施例１を工程順に
示す説明図である。表裏両面に素子及び配線を有する半
導体ペレット２の両面に絶縁物質よりなるペレットアイ
ランド１が蒸着あるいは塗付あるいは貼付等の手法によ
り固着されている。Figure 1 (a), (b), (c), (d)
, (e) and (f) are explanatory diagrams showing Example 1 of the present invention in order of steps. Pellet islands 1 made of an insulating material are fixed to both sides of a semiconductor pellet 2 having elements and wiring on both sides by vapor deposition, painting, pasting, or the like.

ペレット用ボンディングステージ３はその内部が中空と
なっており、図示しない外部配管及び制御機構により半
導体ペレット２を所定のタイミングでボンディングステ
ージ３上に真空吸引し固定する。次に本発明による動作
について説明する。第１図（ａ）において、図示しない
搭載機構により半導体ペレット２及びインナーリード４
をそれぞれペレット用ボンディングステージ３及びイン
ナーリード用ボンディングステージ５上に搭載する。搭
載が完了すると、第１図（ｂ）に示すようにペレット用
ボンディングステージ３の中空部と図示しない外部配管
及び制御機構が作用し１図中の矢印で示すように半導体
ペレット２をペレットアイランド１を介してペレット用
ボンディングステージ３上に固定する。固定後、ボンデ
ィング装置はボンディングを開始し、第１図（ｃ）に示
すように半導体ペレット２の表面（半導体ペレット２で
先にボンディングする面を表面、次にボンディングする
面を裏面とした）のワイヤーボンディングを完了する。The pellet bonding stage 3 is hollow inside, and the semiconductor pellet 2 is vacuum-suctioned and fixed onto the bonding stage 3 at a predetermined timing using external piping and a control mechanism (not shown). Next, the operation according to the present invention will be explained. In FIG. 1(a), a semiconductor pellet 2 and an inner lead 4 are mounted by a mounting mechanism (not shown).
are mounted on the pellet bonding stage 3 and the inner lead bonding stage 5, respectively. When the loading is completed, as shown in FIG. 1(b), the hollow part of the pellet bonding stage 3 and the external piping and control mechanism (not shown) act to transfer the semiconductor pellet 2 to the pellet island 1 as shown by the arrow in FIG. It is fixed on the pellet bonding stage 3 via the pellet. After fixing, the bonding device starts bonding, and as shown in FIG. Complete wire bonding.

表面のワイヤーボンディングが完了した半導体ペレット
２とインナーリード４は第１図（ｄ）に示すように図示
しない搭載機構によりボンディングされた面を反転させ
、ボンディングステージ３及び５と正対するようにステ
ージ３及び５に搭載される。As shown in FIG. 1(d), the semiconductor pellet 2 and the inner lead 4, whose surfaces have been wire-bonded, have their bonded surfaces reversed by a mounting mechanism (not shown), and are placed on the stage 3 so as to directly face the bonding stages 3 and 5. and 5.

次に第１図（ｅ）に示すように半導体ペレット２のペレ
ットアイランド１を真空吸引し半導体ペレット２をペレ
ット用ボンディングステージ３上に固定して裏面のワイ
ヤーボンディングを行う。このようにして第１図（ト）
に示すように半導体ペレット２の表裏両面のワイヤーボ
ンディングが完了する。Next, as shown in FIG. 1(e), the pellet island 1 of the semiconductor pellet 2 is vacuum-suctioned, the semiconductor pellet 2 is fixed on the pellet bonding stage 3, and wire bonding is performed on the back surface. In this way, Figure 1 (G)
As shown in FIG. 2, wire bonding on both the front and back surfaces of the semiconductor pellet 2 is completed.

尚、この場合のペレットアイランド１及びペレット用ボ
ンディングステージ３の寸法は第２図（ａ）部に示すよ
うにボンディングツール６とペレットアイランド１がボ
ンディング時に干渉することなく。In this case, the dimensions of the pellet island 1 and the pellet bonding stage 3 are such that the bonding tool 6 and the pellet island 1 do not interfere with each other during bonding, as shown in FIG. 2(a).

また第２図（ｂ）部に示すようにワイヤーボンディング
された半導体ペレット２を反転させボンディングステー
ジ３上に搭載するときに結線されたワイヤー７とボンデ
ィングステージ３が干渉することのない寸法とする。さ
らにインナーリード用ボンディングステージ５の寸法及
び表裏両面のインナーリード４上のボンディング位置は
、第３図（ａ）。Further, as shown in FIG. 2(b), the dimensions are such that when the wire-bonded semiconductor pellet 2 is inverted and mounted on the bonding stage 3, the connected wire 7 and the bonding stage 3 do not interfere with each other. Furthermore, the dimensions of the bonding stage 5 for inner leads and the bonding positions on the inner leads 4 on both the front and back surfaces are shown in FIG. 3(a).

（ｂ）に示すように表面ボンディング時に結線されたワ
イヤー７が裏面ボンディング時にインナーリード用ボン
ディングステージ５と干渉することがないように、表面
側のインナーリード４上のボンディング位置が裏面側の
ボンディング位置よりもインナーリード４の先端近くま
たインナーリード用ボンディングステージ５の寸法は裏
面ボンディング時には表面ボンディング時よりもΔＱ短
くなり（図示しない伸縮機構により裏面ボンディング時
にはΔＱだけ短くなる。あるいは裏面ボンディング時に
はΔαだけ短いインナーリード用ボンディングステージ
５を用いる）、ワイヤー７との干渉がないような寸法及
び位置となっている。またペレットアイランド１の強度
及びペレットアイランド１と半導体ペレット２との接合
強度は半導体ペレット２をペレットアイランド１を介し
てペレット用ボンディングステージ３に搭載し、保持す
る場合に作用する外部力によって半導体ペレット２に損
傷を生じない強度を有するものとする。一方、前記ボン
ディングステージ３は図示しない加熱体が先端に配備さ
れており、半導体ペレットを接触にて加熱することがで
きる。また、この加熱については赤外線ランプにより非
接触にて加熱することもできる。As shown in (b), the bonding position on the inner lead 4 on the front side is the bonding position on the back side so that the wire 7 connected during front side bonding does not interfere with the bonding stage 5 for inner leads during back side bonding. The dimensions of the bonding stage 5 for the inner lead 4 are shorter by ΔQ when bonding on the back side than when bonding on the front side. (using the inner lead bonding stage 5), the dimensions and position are such that there is no interference with the wire 7. In addition, the strength of the pellet island 1 and the bonding strength between the pellet island 1 and the semiconductor pellet 2 are determined by the external force that acts when the semiconductor pellet 2 is mounted on the pellet bonding stage 3 via the pellet island 1 and held. It shall have the strength not to cause any damage. On the other hand, the bonding stage 3 is equipped with a heating body (not shown) at its tip, and can heat the semiconductor pellet by contact. Moreover, this heating can also be performed in a non-contact manner using an infrared lamp.

（実施例２） 第４図は本発明の実施例２の説明図である。(Example 2) FIG. 4 is an explanatory diagram of Embodiment 2 of the present invention.

アイランド１は２段形状よりなり、その先端部をオス型
１ａとするとペレット用ボンディングステージ３はその
先端部にオス型に対応したメス型の溝３ａを有する。型
の断面（Ａ−Ａ断面矢視方向）の形状は円形ではないも
のとする。The island 1 has a two-stage shape, and if the tip thereof is a male type 1a, the pellet bonding stage 3 has a female groove 3a corresponding to the male type at its tip. It is assumed that the shape of the cross section of the mold (in the direction of arrows on the A-A cross section) is not circular.

この実施例ではアイランド１及びアイランド１を搭載す
るペレット用ボンディングステージ３がそれぞれ円形で
ない（オス型をメス型に挿入した場合、挿入方向と直交
する平面内での半導体ペレット２の回転による移動がな
い）ため、ボンディング時において半導体ペレット２を
そのアイランド１の先端部のオス型１ａがペレット用ボ
ンディングステージ３のメス型溝３ａに挿入されるよう
に搭載すれば、常に一定の位置精度で半導体ペレット２
をペレット用ボンディングステージ３上に搭載できると
いう利点がある。In this embodiment, the island 1 and the pellet bonding stage 3 on which the island 1 is mounted are not circular (when a male mold is inserted into a female mold, there is no rotational movement of the semiconductor pellet 2 in a plane perpendicular to the insertion direction). ) Therefore, if the semiconductor pellet 2 is mounted so that the male mold 1a at the tip of the island 1 is inserted into the female mold groove 3a of the pellet bonding stage 3 during bonding, the semiconductor pellet 2 can be positioned with constant positional accuracy.
It has the advantage that it can be mounted on the pellet bonding stage 3.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は半導体ペレットのボンディ
ング面に半導体ペレットの内部素子及び配線とは絶縁さ
れた所定厚の突起もしくは膜よりなる領域を形成し、こ
の領域のみを外部より支持することにより半導体ペレッ
トを固定してワイヤーボンディングを行うため、半導体
ペレットの内部素子及び配線には何らの損傷を与えるこ
となく、半導体ペレットの表裏両面にワイヤーボンディ
ングを行うことができるという効果がある。As explained above, the present invention forms a region on the bonding surface of the semiconductor pellet consisting of a protrusion or film of a predetermined thickness that is insulated from the internal elements and wiring of the semiconductor pellet, and supports only this region from the outside. Since wire bonding is performed with the pellet fixed, there is an effect that wire bonding can be performed on both the front and back surfaces of the semiconductor pellet without causing any damage to the internal elements and wiring of the semiconductor pellet.

【図面の簡単な説明】 第１図（ａ）〜（ト）は本発明の実施例１を工程順に示
す説明図、第２図及び第３図（ａ）、　（ｂ）は実施例
１の形状寸法を示す説明図、第４図は本発明のワイヤー
ボンディング方法の実施例２を示す説明図、第５図は従
来のワイヤーボンディングの前工程が完了したワークを
示す斜視図、第６図は従来のワイヤーボンディング方法
によるワークの縦断面図である。 １・・・ペレットアイランド　２・・・半導体ペレット
３・・・ペレット用ボンディングステージ４・・・イン
ナーリード ５・・・インナーリード用ボンディングステージ６・・
・ボンディングツール７・・・ワイヤー８・・・リード
フレーム　　　９・・・接合剤１０・・・アイランド　
　　１１・・・ボンディングステージ（ｂ） 第１図 Ｃｆ） 第１図 （ａ） 第３図 （ｂ） 第４図[Brief Description of the Drawings] Figures 1 (a) to (g) are explanatory diagrams showing the first embodiment of the present invention in the order of steps, and Figures 2 and 3 (a) and (b) are illustrations of the first embodiment of the present invention. FIG. 4 is an explanatory diagram showing Embodiment 2 of the wire bonding method of the present invention. FIG. 5 is a perspective view showing a workpiece after the conventional wire bonding process has been completed. FIG. 6 is an explanatory diagram showing the shape and dimensions. FIG. 2 is a longitudinal cross-sectional view of a workpiece obtained by a conventional wire bonding method. 1... Pellet island 2... Semiconductor pellet 3... Bonding stage for pellets 4... Inner lead 5... Bonding stage 6 for inner lead...
・Bonding tool 7... Wire 8... Lead frame 9... Bonding agent 10... Island
11... Bonding stage (b) Figure 1 Cf) Figure 1 (a) Figure 3 (b) Figure 4

Claims (1)

【特許請求の範囲】[Claims] １、半導体ペレットの片面もしくは両面に半導体ペレッ
トの内部素子及び配線とは絶縁された突起もしくは膜よ
りなる領域を形成し、この領域を外部より支持すること
により半導体ペレットを固定してワイヤーボンディング
を行うことを特徴とするワイヤーボンディング方法。1. Form a region on one or both sides of the semiconductor pellet consisting of a protrusion or film that is insulated from the internal elements and wiring of the semiconductor pellet, and support this region from the outside to fix the semiconductor pellet and perform wire bonding. A wire bonding method characterized by:
JP63043697A 1988-02-26 1988-02-26 Wire bonding Pending JPH01218032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63043697A JPH01218032A (en) 1988-02-26 1988-02-26 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63043697A JPH01218032A (en) 1988-02-26 1988-02-26 Wire bonding

Publications (1)

Publication Number Publication Date
JPH01218032A true JPH01218032A (en) 1989-08-31

Family

ID=12671021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63043697A Pending JPH01218032A (en) 1988-02-26 1988-02-26 Wire bonding

Country Status (1)

Country Link
JP (1) JPH01218032A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423102B1 (en) 1994-11-30 2002-07-23 Sharp Kabushiki Kaisha Jig used for assembling semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423102B1 (en) 1994-11-30 2002-07-23 Sharp Kabushiki Kaisha Jig used for assembling semiconductor devices

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