JPH01214009A - Semiconductor chip for integrated circuit - Google Patents

Abstract

PURPOSE:To stabilize an electrical characteristic and to prevent the destruction of an active element and the like formed on an active element formation region by a method wherein the region is formed into a circular shape or a polygonal shape with five sides or more by setting a semiconductor chip as the center. CONSTITUTION:In a semiconductor chip 5 for integrated circuit use, an active element formation region 5a is formed into a circular shape or a polygonal shape with five sides or more by setting the semiconductor chip 5 as the center. For example, while the active element formation region 5a of the semiconductor chip 5 is formed to be circular-shaped, a circuit which is not used during the operation of an integrated circuit or a dummy circuit for process condition confirmation use or for inspection use which is used during the manufacture of the integrated circuit is formed at a peripheral part 5b of the active element formation region 5a. By this setup, a die bonding material 6 creeps to the whole of the lower part of the formation part 5a of an active element which generates heat; the heat generated by the active element formed on the semiconductor chip 5 can be dissipated efficiently.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to semiconductor chips for integrated circuits.

[Prior art]

In recent years, the speed of integrated circuits has increased, and as a result,
Heat generation from integrated circuits on semiconductor chips has become a problem.

Such an integrated circuit is usually formed on a Si single crystal substrate (hereinafter referred to as a wafer) or a GaAs substrate using photolithography technology or thin film formation technology. In its formation, as shown in FIG. 2(a), a plurality of integrated circuits are formed on a wafer, and the plurality of integrated circuits are divided into rectangular semiconductor chips 2 by dicing or the like. Then, the divided semiconductor chip 2 is die-bonded to a die-bonding base, and then wire bonding or the like is performed to complete a semiconductor integrated circuit device. Then, this die bonding state is changed to the second (b) state.
), FIG. 2(C), and FIG. 2(d). First, the die bonding material 4 was dropped onto the die bonding base 3, and the semiconductor chip 2 was bonded thereon.

In this rectangular semiconductor chip 2, active elements were formed in a region surrounded by a dotted line 2a shown in FIG. 2(b) in order to increase the degree of integration of active elements incorporated therein.

[Problems to be solved by the present invention]

In semiconductor integrated circuits, since active elements are integrated therein, heat generation during operation becomes a problem.

Heat generated from active elements and the like during operation is radiated through the semiconductor chip substrate, the bonding material, and the die bonding base. In particular, this heat dissipation problem becomes more serious as the operating speed of integrated circuits becomes faster.

However, in the conventional semiconductor chip element as shown in FIG. 2(d), the bonding material does not sufficiently wrap around the lower side of the peripheral corner 2b of the semiconductor chip 2, and this corner region 2c
The heat generated by the active elements formed in the bonding material is not radiated through the bonding material. As a result, heat dissipation from active elements and the like has been uneven. Due to this unevenness in heat dissipation, the electrical characteristics of the integrated circuit may become unstable, and the active elements formed at the peripheral corner portion 2b may be destroyed.

Furthermore, if the amount of die bonding material is increased because the bonding material is not sufficiently wrapped around the lower side of the peripheral corner 2b, as shown in FIG. The overlying wire adheres to the bonding pad, causing problems during wire bonding. Furthermore, in order to increase the amount of bonding material in this manner, the bonding material must be dropped several times. As a result, air bubbles are generated between the back surface of the semiconductor chip and the die bonding material, and heat dissipation in the air bubbles is not sufficient, which may cause the problems described above.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a semiconductor chip for an integrated circuit that has stable electrical characteristics and that does not destroy active elements formed thereon.

[Means to solve the problem]

In order to solve the above-mentioned problems, in the present invention, in a semiconductor chip for an integrated circuit, an active element forming region is formed into a circular shape or a polygonal shape of pentagon or more with the semiconductor chip as the center.

[゛effect]

In the semiconductor chip of the present invention, active elements and the like are formed on the surface of the semiconductor chip in a region where the back surface of the chip contacts the die bonding material, thereby enabling sufficient heat dissipation.

- [Examples] Examples according to the present invention will be described below with reference to the drawings.

Elements with the same reference numerals have the same functions, so duplicate explanations will be omitted.

FIG. 1 shows a state in which a semiconductor chip according to an embodiment of the present invention is bonded to a die bonding substrate, ie, the bed portion of a lead frame. Figure 1(a) is a top view, Figure 1(b) is a view viewed from the direction of arrow X in Figure 1(a), and Figure 1(c) is viewed from the direction of arrow Y in Figure 1(a). This is a diagram.

As shown in FIG. 1(a), the active element forming region 5a of the semiconductor chip 5 has a circular shape. The reason why such a shape was adopted is as follows.

When the semiconductor chip 5 is die-bonded to the die-bonding base 7, a die-bonding material 6 is applied to the die-bonding base 7, and bonding is performed via the die-bonding material 7.

This die bonding material 6 spreads into a circular shape when applied. Here, active elements and the like are formed on the upper surface of the semiconductor chip 5, but the bonding material must wrap around the entire lower side of the active element formation region. As described above, the die bonding material 6 spreads into a circular shape, and in order to match this, the active element forming region 5a is formed into a circular shape.

Then, in the peripheral portion 5b of the active element region 5a, a circuit that is not used during the operation of the integrated circuit, such as a dummy circuit for checking process conditions or testing used during the manufacture of the integrated circuit, is formed. That is, since it is difficult for die bonding material 6 to exist below this peripheral portion 5b, an element that is not used during operation of the integrated circuit and does not generate heat is formed.

The formation of the active elements and the dummy circuit can be performed using photolithography technology, thin film formation technology, etc., and since this technology is conventionally known, it will be omitted in this specification.

Note that forming the active element forming region 5a in a limited manner on the semiconductor chip 5 in this way can be easily done by simply changing the pattern of the photomask used in the photolithography process, without changing the manufacturing process. It can be carried out.

A method of die bonding this semiconductor chip 5 to the die bonding base 7 will be explained.

First, the die bonding material 6 is applied to the die bonding substrate 7. This application method is performed by dropping the die bonding material. Next, this die bonding base 7 is moved in a circular shape to stretch the die bonding material. Next, a semiconductor chip is bonded onto this stretched die bonding material.

By performing die bonding using the above method using a semiconductor chip having a circular active element area, the die bonding material can be provided completely below the active element area of the semiconductor chip without any gaps.

The present invention is not limited to the above embodiments, and various modifications may be made.

Specifically, in the above embodiment, the active element forming area of the semiconductor chip is formed into a circular shape centered on the center of the semiconductor chip, but the shape is not limited to this, and even a polygon of pentagon or more can be formed on the die. The bonding material sufficiently wraps around the back surface of the semiconductor chip.

Furthermore, in the above embodiment, when bonding the single conductor chip to the die bonding substrate, the die bonding material is applied to the substrate, but the die bonding material may be applied to the semiconductor chip side instead. In this case, the die bonding material is dropped onto the center of the back surface of the semiconductor chip, the semiconductor chip is pressed against the die bonding base, and the semiconductor chip is stretched and bonded.

〔Effect of the invention〕

In the semiconductor chip of the present invention, the active element forming region is
By forming a circle or a polygon of pentagon or larger with the chip at the center, the die bonding material wraps around the entire lower side of the active element formation area that generates heat, making it possible to efficiently dissipate the heat generated by the active elements formed on the semiconductor chip. It can dissipate heat well. Therefore, by employing a semiconductor chip having such a shape, the problem of heat generation can be easily solved, especially in high-speed devices.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a state in which a semiconductor chip according to the present invention is die-bonded, and FIG. 2 is a diagram illustrating a conventional example. 1... Wafer, 2.5... Semiconductor chip, 2a.
...Active element formation area, 2c...Semiconductor chip peripheral corner, 3.7...Die bonding base, 4.6...
・Die bonding material, 5a...active element formation area,
5c...Dummy circuit formation area. Patent applicant: Sumitomo Electric Industries, Ltd. Representative patent attorney Yoshiki Hase
Fumiaki Terashima Figure 1 = 2a (b), Conventional example Figure 2 (C) (d) ゝ3 (e)

Claims (1)

[Claims] 1. A semiconductor chip for an integrated circuit, characterized in that an active element formation region has a circular shape or a polygonal shape of pentagon or more with the semiconductor chip at the center.