JP2000223519A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JP2000223519A JP2000223519A JP11025971A JP2597199A JP2000223519A JP 2000223519 A JP2000223519 A JP 2000223519A JP 11025971 A JP11025971 A JP 11025971A JP 2597199 A JP2597199 A JP 2597199A JP 2000223519 A JP2000223519 A JP 2000223519A
- Authority
- JP
- Japan
- Prior art keywords
- columnar
- semiconductor device
- sealing film
- resin sealing
- columnar electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、柱状電極を有す
る半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a columnar electrode.
【０００２】[0002]
【従来の技術】半導体チップ単体やＣＳＰ(Chip Size P
ackage)等の半導体装置では、半導体基板あるいは中間
基板（インターポーザ）上に、他の回路基板等と接続さ
れる柱状電極が設けられている。従来のこのような半導
体装置の製造方法では、一例として、まず図８（Ａ）に
示すように、ウエハ状態のシリコン基板（半導体基板）
１上に複数の柱状電極２が形成されたものを印刷用ステ
ージ３の上面に位置決めして載置する。次に、シリコン
基板１の上面に印刷用マスク４を位置合わせして載置す
る。印刷用マスク４は、図８（Ａ）及び図９に示すよう
に、厚さが柱状電極２の高さよりもやや厚いマスク本体
４ａにシリコン基板１の平面サイズよりもやや小さい円
形状の開口部４ｂが形成されたものからなっている。2. Description of the Related Art A semiconductor chip alone or a CSP (Chip Size P)
In a semiconductor device such as an ackage, a columnar electrode connected to another circuit board or the like is provided on a semiconductor substrate or an intermediate substrate (interposer). In a conventional method of manufacturing such a semiconductor device, as an example, first, as shown in FIG. 8A, a silicon substrate (semiconductor substrate) in a wafer state is formed.
One having a plurality of columnar electrodes 2 formed thereon is positioned and mounted on the upper surface of a printing stage 3. Next, the printing mask 4 is positioned and placed on the upper surface of the silicon substrate 1. As shown in FIGS. 8A and 9, the printing mask 4 has a circular opening slightly smaller than the plane size of the silicon substrate 1 in a mask body 4 a having a thickness slightly larger than the height of the columnar electrode 2. 4b is formed.
【０００３】次に、図８（Ｂ）に示すように、スキージ
５で液状樹脂からなる封止材６を印刷用マスク４の開口
部４ｂ内に印刷し、硬化工程を経ることにより、樹脂封
止膜７を形成する。この状態では、柱状電極２の上面は
樹脂封止膜７によって覆われている。次に、樹脂封止膜
７の表面を適宜に研磨あるいはエッチングすることによ
り、図８（Ｃ）に示すように、柱状電極２の上面を露出
させる。次に、図８（Ｄ）に示すように、柱状電極２の
上面に半田ボール８を形成する。次に、ダイシング工程
を経ると、個々の半導体チップ（半導体装置）が得られ
る。[0003] Next, as shown in FIG. 8 (B), a sealing material 6 made of a liquid resin is printed in the opening 4 b of the printing mask 4 with a squeegee 5, and a curing process is performed. The stop film 7 is formed. In this state, the upper surface of the columnar electrode 2 is covered with the resin sealing film 7. Next, by appropriately polishing or etching the surface of the resin sealing film 7, the upper surface of the columnar electrode 2 is exposed as shown in FIG. 8C. Next, as shown in FIG. 8D, a solder ball 8 is formed on the upper surface of the columnar electrode 2. Next, after a dicing step, individual semiconductor chips (semiconductor devices) are obtained.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うにして得られた半導体装置では、例えば図８（Ｃ）に
示すように、樹脂封止膜７の厚さが柱状電極２の高さと
同じとなるので、柱状電極２が揺れ動きにくく、この結
果、図示しない回路基板上に搭載した後における温度サ
イクルテストにおいて、シリコン基板１と回路基板との
間の熱膨張係数差に起因して発生する応力を柱状電極２
で吸収することができず、不良が発生してしまうことが
あるという問題があった。この発明の課題は、柱状電極
で応力を吸収することができるようにすることである。However, in the semiconductor device thus obtained, the thickness of the resin sealing film 7 is equal to the height of the columnar electrode 2 as shown in FIG. 8C, for example. Therefore, the columnar electrode 2 hardly swings, and as a result, in a temperature cycle test after mounting on a circuit board (not shown), stress generated due to a difference in thermal expansion coefficient between the silicon substrate 1 and the circuit board is reduced. Columnar electrode 2
There is a problem that it is not possible to absorb it and defects may occur. An object of the present invention is to enable a columnar electrode to absorb stress.
【０００５】[0005]
【課題を解決するための手段】この発明は、基板上に形
成された複数の柱状電極間の前記基板上にスクリーン印
刷法により樹脂封止膜を厚さが前記柱状電極の高さより
も薄くなるように形成するようにしたものである。この
発明によれば、樹脂封止膜の厚さを柱状電極の高さより
も薄くしているので、柱状電極を揺れ動き易くすること
ができ、ひいては柱状電極で応力を吸収することができ
る。According to the present invention, the thickness of a resin sealing film between a plurality of columnar electrodes formed on a substrate is reduced by a screen printing method on the substrate so as to be smaller than the height of the columnar electrodes. It is formed in such a manner. According to the present invention, since the thickness of the resin sealing film is made smaller than the height of the columnar electrode, the columnar electrode can be easily swung and the stress can be absorbed by the columnar electrode.
【０００６】[0006]
【発明の実施の形態】（第１実施形態）図１（Ａ）〜
（Ｄ）はそれぞれこの発明の第１実施形態における半導
体装置の各製造工程を示したものである。そこで、これ
らの図を順に参照して、この実施形態における半導体装
置の製造方法について説明する。まず、図１（Ａ）に示
すように、ウエハ状態のシリコン基板１１上に複数の柱
状電極１２が形成されたものを印刷用ステージ１３の上
面に位置決めして載置する。次に、シリコン基板１１の
上面に印刷用マスク１４を位置合わせして載置する。印
刷用マスク１４は、図１（Ａ）及び図２に示すように、
厚さが柱状電極１２の高さよりも適宜に薄い（例えば柱
状電極１２の高さの半分以下）マスク本体１４ａにシリ
コン基板１１の平面サイズよりもやや小さい円形状の開
口部１４ｂが形成されたものからなっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIGS.
(D) shows each manufacturing process of the semiconductor device in the first embodiment of the present invention. Therefore, a method of manufacturing the semiconductor device according to this embodiment will be described with reference to these drawings in order. First, as shown in FIG. 1 (A), a silicon substrate 11 in a wafer state on which a plurality of columnar electrodes 12 are formed is positioned and placed on the upper surface of a printing stage 13. Next, the printing mask 14 is positioned and placed on the upper surface of the silicon substrate 11. The printing mask 14 is, as shown in FIGS.
A mask body 14a whose thickness is appropriately smaller than the height of the columnar electrode 12 (for example, half or less of the height of the columnar electrode 12) and in which a circular opening 14b slightly smaller than the plane size of the silicon substrate 11 is formed. Consists of
【０００７】次に、図１（Ｂ）に示すように、ナイロン
等からなるスキージ１５で液状樹脂からなる封止材１６
を印刷用マスク１４の開口部１４ｂ内に印刷し、硬化工
程を経ることにより、樹脂封止膜１７を形成する。この
状態では、柱状電極１２の上面は樹脂封止膜１７によっ
て覆われているが、柱状電極１２間における樹脂封止膜
１７の厚さは柱状電極１２の高さよりも適宜に薄くなっ
ている。なお、スキージ１５をほぼ垂直にしてまたは若
干傾斜させて往復動させるようにしてもよい。次に、柱
状電極１２上及びその近傍の樹脂封止膜１７を適宜に研
磨あるいはエッチングすることにより、図１（Ｃ）に示
すように、柱状電極１２の上面を露出させる。次に、図
１（Ｄ）に示すように、柱状電極１２の上面に半田ボー
ル１８を形成する。次に、ダイシング工程を経ると、個
々の半導体チップ（半導体装置）が得られる。Next, as shown in FIG. 1B, a sealing material 16 made of a liquid resin is formed with a squeegee 15 made of nylon or the like.
Is printed in the opening 14b of the printing mask 14, and a curing process is performed to form the resin sealing film 17. In this state, the upper surface of the columnar electrode 12 is covered with the resin sealing film 17, but the thickness of the resin sealing film 17 between the columnar electrodes 12 is appropriately smaller than the height of the columnar electrode 12. Note that the squeegee 15 may be reciprocated substantially vertically or slightly inclined. Next, the upper surface of the columnar electrode 12 is exposed as shown in FIG. 1C by appropriately polishing or etching the resin sealing film 17 on and near the columnar electrode 12. Next, as shown in FIG. 1D, a solder ball 18 is formed on the upper surface of the columnar electrode 12. Next, after a dicing step, individual semiconductor chips (semiconductor devices) are obtained.
【０００８】次に、このようにして得られた半導体装
置、すなわち図１（Ｄ）に示すような半導体装置を回路
基板上に搭載した場合について、図３を参照して説明す
る。半導体装置１０は、半田ボール１８が回路基板２１
の上面の所定の箇所に設けられた接続パッド２２に接合
されていることにより、回路基板２１上に搭載されてい
る。Next, the case where the semiconductor device thus obtained, that is, the semiconductor device as shown in FIG. 1D is mounted on a circuit board will be described with reference to FIG. In the semiconductor device 10, the solder balls 18 are
It is mounted on the circuit board 21 by being joined to the connection pad 22 provided at a predetermined position on the upper surface of the substrate.
【０００９】ところで、半導体装置１０の柱状電極１２
間における樹脂封止膜１７の厚さは柱状電極１２の高さ
よりも適宜に薄くなっているので、柱状電極１２を揺れ
動き易くすることができる。この結果、半導体装置１０
を回路基板２１上に搭載した後における温度サイクルテ
ストにおいて、シリコン基板１１と回路基板２１との間
の熱膨張係数差に起因して発生する応力を柱状電極１２
で吸収することができ、ひいては不良が発生しにくいよ
うにすることができる。The columnar electrode 12 of the semiconductor device 10
Since the thickness of the resin sealing film 17 between them is appropriately smaller than the height of the columnar electrode 12, the columnar electrode 12 can be easily shaken. As a result, the semiconductor device 10
In the temperature cycle test after mounting on the circuit board 21, the stress generated due to the difference in thermal expansion coefficient between the silicon substrate 11 and the circuit board 21
Can be absorbed, and as a result, defects can be prevented from occurring.
【００１０】（第２実施形態）図４はこの発明の第２実
施形態における半導体装置の製造方法を説明するために
示したものである。この実施形態では、印刷用マスク１
４の厚さは、柱状電極１２の高さと同じであってもよ
く、また柱状電極１２の高さよりも薄くても厚くてもよ
い。その代わりに、印刷用ステージ１３とスキージ１５
とのうちいずれか一方を柱状電極１２の配置に応じて上
下動させる。この場合、図５に示すように、印刷用マス
ク１４は、マスク本体１４ａにシリコン基板１１の平面
サイズよりもやや小さい円形状の開口部１４ｂが形成さ
れ、この開口部１４ｂの所定の両側におけるマスク本体
１４ａの上面に複数の溝１４ｃが柱状電極１２の配置に
応じて（すなわち柱状電極１２間に対応する位置に）形
成されたものからなっている。溝１４ｃの全体としての
長さＬはスキージ１８の長さよりも長くなっている。溝
１４ｃの部分におけるマスク本体１４ａの厚さは、一例
として、柱状電極１２の高さが１００〜１５０μｍ程度
である場合には、３０μｍ程度とする。(Second Embodiment) FIG. 4 shows a method for manufacturing a semiconductor device according to a second embodiment of the present invention. In this embodiment, the printing mask 1
The thickness of 4 may be the same as the height of the columnar electrode 12, and may be smaller or larger than the height of the columnar electrode 12. Instead, the printing stage 13 and the squeegee 15
Is moved up and down according to the arrangement of the columnar electrodes 12. In this case, as shown in FIG. 5, in the printing mask 14, a circular opening 14b slightly smaller than the plane size of the silicon substrate 11 is formed in the mask body 14a, and masks on predetermined sides of the opening 14b are formed. A plurality of grooves 14c are formed on the upper surface of the main body 14a in accordance with the arrangement of the columnar electrodes 12 (that is, at positions corresponding to between the columnar electrodes 12). The overall length L of the groove 14c is longer than the length of the squeegee 18. As an example, the thickness of the mask body 14a in the groove 14c is about 30 μm when the height of the columnar electrode 12 is about 100 to 150 μm.
【００１１】そして、例えば印刷用ステージ１３を柱状
電極１２の配置に応じて上下動させながら、スキージ１
５を図４において左側から右側に移動させると、図４に
おいて一点鎖線で示すように、スキージ１５が印刷用マ
スク１４の溝１４ｃの部分において相対的に下降する。
かくして、スキージ１５で液状樹脂からなる封止材１６
を印刷用マスク１４の開口部１４ｅ内に印刷し、硬化工
程を経ることにより、樹脂封止膜１７を形成する。した
がって、この場合も、柱状電極１２の上面は樹脂封止膜
１７によって覆われるが、柱状電極１２間における樹脂
封止膜１７の厚さは柱状電極１２の高さよりも適宜に薄
くなる。次に、柱状電極１２上及びその近傍の樹脂封止
膜１７を適宜に研磨あるいはエッチングすることによ
り、柱状電極１２の上面を露出させる。次に、図示して
いないが、柱状電極１２の上面に半田ボールを形成す
る。次に、ダイシング工程を経ると、個々の半導体チッ
プ（半導体装置）が得られる。The squeegee 1 is moved up and down, for example, according to the arrangement of the columnar electrodes 12.
4 is moved from the left side to the right side in FIG. 4, the squeegee 15 relatively lowers at the groove 14c of the printing mask 14, as indicated by the dashed line in FIG.
Thus, the sealing material 16 made of a liquid resin is
Is printed in the opening 14e of the printing mask 14, and the resin sealing film 17 is formed through a curing process. Therefore, also in this case, the upper surface of the columnar electrode 12 is covered with the resin sealing film 17, but the thickness of the resin sealing film 17 between the columnar electrodes 12 is appropriately smaller than the height of the columnar electrode 12. Next, the upper surface of the columnar electrode 12 is exposed by appropriately polishing or etching the resin sealing film 17 on and near the columnar electrode 12. Next, although not shown, a solder ball is formed on the upper surface of the columnar electrode 12. Next, after a dicing step, individual semiconductor chips (semiconductor devices) are obtained.
【００１２】（第３実施形態）図６（Ａ）〜（Ｄ）はそ
れぞれこの発明の第３実施形態における半導体装置の各
製造工程を示したものである。この実施形態における印
刷用マスク１４は、図６（Ａ）及び図７に示すように、
厚さが柱状電極１２の高さよりも適宜に厚いマスク本体
１４ａの下面にシリコン基板１１の平面サイズよりもや
や小さい円形状の凹部１４ｄが形成され、この凹部１４
ｄの部分におけるマスク本体１４ａに複数のスリット状
の開口部１４ｅが柱状電極１２の配置に応じて（すなわ
ち柱状電極１２間に対応する位置に）形成されたものか
らなっている。この場合、凹部１４ｄの深さは柱状電極
１２の高さと同じとなっている。開口部１４ｅの幅ｄは
柱状電極１２間の間隔Ｄよりも適宜に小さくなってい
る。(Third Embodiment) FIGS. 6A to 6D show respective manufacturing steps of a semiconductor device according to a third embodiment of the present invention. As shown in FIGS. 6A and 7, the printing mask 14 in this embodiment
On the lower surface of the mask body 14a whose thickness is appropriately larger than the height of the columnar electrode 12, a circular concave portion 14d slightly smaller than the plane size of the silicon substrate 11 is formed.
A plurality of slit-shaped openings 14e are formed in the mask main body 14a at the portion d in accordance with the arrangement of the columnar electrodes 12 (that is, at positions corresponding to between the columnar electrodes 12). In this case, the depth of the recess 14 d is the same as the height of the columnar electrode 12. The width d of the opening 14e is appropriately smaller than the interval D between the columnar electrodes 12.
【００１３】そして、まず図６（Ａ）に示すように、シ
リコン基板１１を印刷用ステージ１３の上面に位置決め
して載置し、次いでシリコン基板１１の上面に印刷用マ
スク１４を位置合わせして載置する。この状態では、柱
状電極１２の上面は、印刷用マスク１４のうち開口部１
４ｅ間におけるマスク本体１４ａによって覆われてい
る。Then, as shown in FIG. 6A, the silicon substrate 11 is positioned and placed on the upper surface of the printing stage 13, and then the printing mask 14 is positioned on the upper surface of the silicon substrate 11. Place. In this state, the upper surface of the columnar electrode 12 is
It is covered by the mask body 14a between 4e.
【００１４】次に、図６（Ｂ）に示すように、スキージ
１５で液状樹脂からなる封止材１６を印刷用マスク１４
の開口部１４ｅ内に印刷し、硬化工程を経ることによ
り、樹脂封止膜１７を形成する。この場合、印刷用マス
ク１４の開口部１４ｅの幅ｄが柱状電極１２間の間隔Ｄ
よりも適宜に小さくなっているので、開口部１４ｅを介
して柱状電極１２間におけるシリコン基板１１上に印刷
される封止材１６の量が適宜に少なく、且つ、この印刷
された封止材１６が表面張力により流動して柱状電極１
２の側面を覆うようになる。したがって、この場合に
は、図６（Ｃ）に示すように、柱状電極１２の上面は樹
脂封止膜１７によって覆われず、且つ、柱状電極１２間
における樹脂封止膜１７の厚さは柱状電極１２の高さよ
りも適宜に薄くなる。したがって、この場合には、樹脂
封止膜１７の表面を研磨またはエッチングする必要は無
い。次に、図６（Ｄ）に示すように、柱状電極１２の上
面に半田ボール１８を形成する。次に、ダイシング工程
を経ると、個々の半導体チップ（半導体装置）が得られ
る。Next, as shown in FIG. 6B, a sealing material 16 made of a liquid resin is
The resin sealing film 17 is formed by performing printing in the opening 14e of the above and through a curing process. In this case, the width d of the opening 14 e of the printing mask 14 is equal to the distance D between the columnar electrodes 12.
The amount of the sealing material 16 printed on the silicon substrate 11 between the columnar electrodes 12 via the opening 14e is appropriately reduced, and the printed sealing material 16 Flows due to surface tension and the columnar electrode 1
2 will be covered. Therefore, in this case, as shown in FIG. 6C, the upper surface of the columnar electrode 12 is not covered with the resin sealing film 17, and the thickness of the resin sealing film 17 between the columnar electrodes 12 is columnar. The thickness is appropriately smaller than the height of the electrode 12. Therefore, in this case, it is not necessary to polish or etch the surface of the resin sealing film 17. Next, as shown in FIG. 6D, a solder ball 18 is formed on the upper surface of the columnar electrode 12. Next, after a dicing step, individual semiconductor chips (semiconductor devices) are obtained.
【００１５】なお、図６（Ｂ）に示す印刷工程におい
て、図４に示す場合と同様に、印刷用ステージ１３とス
キージ１５とのうちいずれか一方を印刷用マスク１４の
開口部１４ｅの配置に応じて上下動させるようにしても
よい。この場合、印刷用マスク１４の開口部１４ｅの幅
ｄを柱状電極１２間の間隔Ｄと同じとしてもよい。In the printing step shown in FIG. 6B, one of the printing stage 13 and the squeegee 15 is moved to the position of the opening 14e of the printing mask 14 similarly to the case shown in FIG. You may make it move up and down according to it. In this case, the width d of the opening 14 e of the printing mask 14 may be the same as the distance D between the columnar electrodes 12.
【００１６】また、上記各実施形態において、樹脂封止
膜を真空スクリーン印刷法により形成するようにしても
よい。このようにした場合には、樹脂封止膜中に空気
（気泡）が混入しないようにすることができる上、柱状
電極の根元の部分を樹脂封止膜でその間に空気（気泡）
を介在させることなく覆うことができる。また、樹脂封
止膜をディスペンサ方式により形成するようにしてもよ
い。In each of the above embodiments, the resin sealing film may be formed by a vacuum screen printing method. In this case, air (bubbles) can be prevented from being mixed into the resin sealing film, and the root portion of the columnar electrode can be sealed with the resin sealing film between the air (bubbles).
Can be covered without intervening. Further, the resin sealing film may be formed by a dispenser method.
【００１７】さらに、上記各実施形態では、半導体装置
の柱状電極の上面（露出面）に半田ボールを形成した場
合について説明したが、半田ボールを形成せずに、半導
体装置の柱状電極の露出面側を回路基板上に異方性導電
接着剤を介して搭載するようにしてもよい。Further, in each of the above embodiments, the case where the solder ball is formed on the upper surface (exposed surface) of the columnar electrode of the semiconductor device has been described. However, the exposed surface of the columnar electrode of the semiconductor device is formed without forming the solder ball. The side may be mounted on a circuit board via an anisotropic conductive adhesive.
【００１８】[0018]
【発明の効果】以上説明したように、この発明によれ
ば、樹脂封止膜の厚さを柱状電極の高さよりも薄くして
いるので、柱状電極を揺れ動き易くすることができ、ひ
いては柱状電極で応力を吸収することができ、不良が発
生しにくいようにすることができる。As described above, according to the present invention, the thickness of the resin sealing film is smaller than the height of the columnar electrode, so that the columnar electrode can be easily swung and moved. Can absorb the stress, and can prevent defects from occurring.
【図面の簡単な説明】[Brief description of the drawings]
【図１】（Ａ）〜（Ｄ）はそれぞれこの発明の第１実施
形態における半導体装置の各製造工程の断面図。FIGS. 1A to 1D are cross-sectional views of respective manufacturing steps of a semiconductor device according to a first embodiment of the present invention.
【図２】図１（Ａ）に示す印刷用マスクの平面図。FIG. 2 is a plan view of the printing mask shown in FIG.
【図３】図１（Ｄ）に示すような半導体装置を回路基板
上に搭載した状態の断面図。FIG. 3 is a cross-sectional view illustrating a state where the semiconductor device as illustrated in FIG. 1D is mounted on a circuit board.
【図４】この発明の第２実施形態における半導体装置の
製造方法を説明するために示す断面図。FIG. 4 is a cross-sectional view for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
【図５】図４に示す印刷用マスクの平面図。FIG. 5 is a plan view of the printing mask shown in FIG. 4;
【図６】（Ａ）〜（Ｄ）はそれぞれこの発明の第３実施
形態における半導体装置の各製造工程の断面図。FIGS. 6A to 6D are cross-sectional views of respective manufacturing steps of a semiconductor device according to a third embodiment of the present invention.
【図７】図６（Ａ）に示す印刷用マスクの平面図。FIG. 7 is a plan view of the printing mask shown in FIG.
【図８】（Ａ）〜（Ｄ）はそれぞれ従来の半導体装置の
一例の各製造工程の断面図。8A to 8D are cross-sectional views of respective manufacturing steps of an example of a conventional semiconductor device.
【図９】図８（Ａ）に示す印刷用マスクの平面図。FIG. 9 is a plan view of the printing mask shown in FIG.
１１ シリコン基板 １２ 柱状電極 １３ 印刷用ステージ １４ 印刷用マスク １５ スキージ １７ 樹脂封止膜 １８ 半田ボール Reference Signs List 11 silicon substrate 12 columnar electrode 13 printing stage 14 printing mask 15 squeegee 17 resin sealing film 18 solder ball
Claims (6)
前記基板上にスクリーン印刷法により樹脂封止膜を厚さ
が前記柱状電極の高さよりも薄くなるように形成するこ
とを特徴とする半導体装置の製造方法。1. A method according to claim 1, wherein a resin sealing film is formed on the substrate between the plurality of columnar electrodes formed on the substrate by screen printing so that the thickness is smaller than the height of the columnar electrodes. Semiconductor device manufacturing method.
封止膜の形成は、厚さが前記柱状電極の高さよりも薄い
印刷用マスクを用いて行うことを特徴とする半導体装置
の製造方法。2. The method according to claim 1, wherein the formation of the resin sealing film is performed using a printing mask having a thickness smaller than the height of the columnar electrode. .
封止膜の形成は、スキージと前記基板とのうちいずれか
一方を前記柱状電極の配置に応じて上下動させて行うこ
とを特徴とする半導体装置の製造方法。3. The invention according to claim 1, wherein the formation of the resin sealing film is performed by vertically moving one of a squeegee and the substrate in accordance with the arrangement of the columnar electrodes. Semiconductor device manufacturing method.
前記樹脂封止膜をスクリーン印刷法により形成した後、
少なくとも前記柱状電極の上面に形成された樹脂封止膜
を除去することを特徴とする半導体装置の製造方法。4. The invention according to claim 2 or 3,
After forming the resin sealing film by a screen printing method,
A method of manufacturing a semiconductor device, comprising removing at least a resin sealing film formed on an upper surface of the columnar electrode.
封止膜の形成は、前記柱状電極の上面を覆う印刷用マス
クを用いて行うことを特徴とする半導体装置の製造方
法。5. The method according to claim 1, wherein the resin sealing film is formed using a printing mask that covers an upper surface of the columnar electrode.
用マスクには複数のスリット状の開口部が前記柱状電極
の配置に応じて形成され、且つ、該開口部の幅が前記柱
状電極間の間隔よりも小さくなっていることを特徴とす
る半導体装置の製造方法。6. The printing mask according to claim 5, wherein a plurality of slit-shaped openings are formed in the printing mask in accordance with the arrangement of the columnar electrodes, and the width of the openings is between the columnar electrodes. A method for manufacturing a semiconductor device, wherein the distance is smaller than the distance between the semiconductor devices.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02597199A JP3430289B2 (en) | 1999-02-03 | 1999-02-03 | Method for manufacturing semiconductor device |
| US09/487,165 US6319851B1 (en) | 1999-02-03 | 2000-01-19 | Method for packaging semiconductor device having bump electrodes |
| TW089101623A TW479303B (en) | 1999-02-03 | 2000-01-31 | Methods for packaging semiconductor device having bump electrodes |
| KR1020000005201A KR100333060B1 (en) | 1999-02-03 | 2000-02-02 | Method for packging semiconductor device having bump electrodes |
| CNB001007548A CN1160769C (en) | 1999-02-03 | 2000-02-03 | Method for packaging semiconductor device with convex electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02597199A JP3430289B2 (en) | 1999-02-03 | 1999-02-03 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000223519A true JP2000223519A (en) | 2000-08-11 |
| JP3430289B2 JP3430289B2 (en) | 2003-07-28 |
Family
ID=12180626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02597199A Expired - Fee Related JP3430289B2 (en) | 1999-02-03 | 1999-02-03 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3430289B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467674B1 (en) * | 1999-12-09 | 2002-10-22 | Casio Computer Co., Ltd. | Method of manufacturing semiconductor device having sealing film on its surface |
| WO2003003798A1 (en) * | 2001-06-29 | 2003-01-09 | Toray Engineering Co., Ltd. | Joining method using anisotropic conductive adhesive |
| CN116825752A (en) * | 2023-08-29 | 2023-09-29 | 江西兆驰半导体有限公司 | Wafer and printing method thereof |
-
1999
- 1999-02-03 JP JP02597199A patent/JP3430289B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467674B1 (en) * | 1999-12-09 | 2002-10-22 | Casio Computer Co., Ltd. | Method of manufacturing semiconductor device having sealing film on its surface |
| WO2003003798A1 (en) * | 2001-06-29 | 2003-01-09 | Toray Engineering Co., Ltd. | Joining method using anisotropic conductive adhesive |
| CN116825752A (en) * | 2023-08-29 | 2023-09-29 | 江西兆驰半导体有限公司 | Wafer and printing method thereof |
| CN116825752B (en) * | 2023-08-29 | 2024-02-09 | 江西兆驰半导体有限公司 | Wafer and printing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3430289B2 (en) | 2003-07-28 |
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