JPH0121093B2 - - Google Patents
Info
- Publication number
- JPH0121093B2 JPH0121093B2 JP59136457A JP13645784A JPH0121093B2 JP H0121093 B2 JPH0121093 B2 JP H0121093B2 JP 59136457 A JP59136457 A JP 59136457A JP 13645784 A JP13645784 A JP 13645784A JP H0121093 B2 JPH0121093 B2 JP H0121093B2
- Authority
- JP
- Japan
- Prior art keywords
- silica
- reaction
- acid
- less
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 224
- 239000000377 silicon dioxide Substances 0.000 claims description 109
- 238000006243 chemical reaction Methods 0.000 claims description 51
- 239000002253 acid Substances 0.000 claims description 33
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000011707 mineral Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 18
- 229910052910 alkali metal silicate Inorganic materials 0.000 claims description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000002244 precipitate Substances 0.000 claims description 8
- 238000010306 acid treatment Methods 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 40
- 239000004115 Sodium Silicate Substances 0.000 description 24
- 239000011734 sodium Substances 0.000 description 24
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 24
- 229910052911 sodium silicate Inorganic materials 0.000 description 24
- 239000002002 slurry Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000000243 solution Substances 0.000 description 17
- 239000000047 product Substances 0.000 description 12
- 238000005406 washing Methods 0.000 description 12
- 235000002639 sodium chloride Nutrition 0.000 description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 229910052776 Thorium Inorganic materials 0.000 description 10
- 229910017604 nitric acid Inorganic materials 0.000 description 10
- 229910052770 Uranium Inorganic materials 0.000 description 9
- 239000000945 filler Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012452 mother liquor Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- -1 alkali metal salts Chemical class 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000941 radioactive substance Substances 0.000 description 3
- 239000012066 reaction slurry Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000004111 Potassium silicate Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000000516 activation analysis Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 2
- 229910052912 lithium silicate Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052913 potassium silicate Inorganic materials 0.000 description 2
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000012264 purified product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 229960004029 silicic acid Drugs 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000012065 filter cake Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000009775 high-speed stirring Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13645784A JPS6117416A (ja) | 1984-07-03 | 1984-07-03 | 高純度シリカおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13645784A JPS6117416A (ja) | 1984-07-03 | 1984-07-03 | 高純度シリカおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6117416A JPS6117416A (ja) | 1986-01-25 |
| JPH0121093B2 true JPH0121093B2 (zh) | 1989-04-19 |
Family
ID=15175557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13645784A Granted JPS6117416A (ja) | 1984-07-03 | 1984-07-03 | 高純度シリカおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6117416A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1271307A (en) * | 1985-06-27 | 1990-07-10 | Iwao Ohshima | Process for manufacturing high purity silica |
| JPS63291808A (ja) * | 1987-05-25 | 1988-11-29 | Kawatetsu Kogyo Kk | 高純度シリカの製造方法 |
| JP4163919B2 (ja) * | 2001-09-25 | 2008-10-08 | 三菱化学株式会社 | シリカ、及びシリカの製造方法 |
| CN100545085C (zh) * | 2005-06-10 | 2009-09-30 | 德固赛嘉联白炭黑（南平）有限公司 | 硫酸钠法生产白炭黑、亚硫酸钠和亚硫酸氢钠的工艺 |
| CN103635425B (zh) * | 2011-07-04 | 2016-04-06 | 太平洋水泥株式会社 | 由二氧化硅与碳构成的颗粒以及二氧化硅与碳的混合物的制造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039296A (zh) * | 1973-08-10 | 1975-04-11 | ||
| JPS56116647A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Manufacturing of silica-alumina type filler for semiconductor memory element covering resin |
| JPS57195151A (en) * | 1981-05-27 | 1982-11-30 | Denki Kagaku Kogyo Kk | Low-radioactive resin composition |
| JPS57212224A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS5947744A (ja) * | 1982-09-10 | 1984-03-17 | Toshiba Ceramics Co Ltd | Ｉｃパツケ−ジ用フイラ−材 |
| JPS5954632A (ja) * | 1982-09-21 | 1984-03-29 | Mitsubishi Metal Corp | 石英ガラス粉末の製造法 |
-
1984
- 1984-07-03 JP JP13645784A patent/JPS6117416A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039296A (zh) * | 1973-08-10 | 1975-04-11 | ||
| JPS56116647A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Manufacturing of silica-alumina type filler for semiconductor memory element covering resin |
| JPS57195151A (en) * | 1981-05-27 | 1982-11-30 | Denki Kagaku Kogyo Kk | Low-radioactive resin composition |
| JPS57212224A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS5947744A (ja) * | 1982-09-10 | 1984-03-17 | Toshiba Ceramics Co Ltd | Ｉｃパツケ−ジ用フイラ−材 |
| JPS5954632A (ja) * | 1982-09-21 | 1984-03-29 | Mitsubishi Metal Corp | 石英ガラス粉末の製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6117416A (ja) | 1986-01-25 |
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