JPH01208839A - Manufacture of resin sealed type electronic device - Google Patents

Manufacture of resin sealed type electronic device

Info

Publication number
JPH01208839A
JPH01208839A JP3358688A JP3358688A JPH01208839A JP H01208839 A JPH01208839 A JP H01208839A JP 3358688 A JP3358688 A JP 3358688A JP 3358688 A JP3358688 A JP 3358688A JP H01208839 A JPH01208839 A JP H01208839A
Authority
JP
Japan
Prior art keywords
resin
support plate
mold
main surface
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3358688A
Other languages
Japanese (ja)
Other versions
JPH0671021B2 (en
Inventor
Tatsunori Watanabe
渡辺 辰紀
Takaaki Yokoyama
隆昭 横山
Hirohiko Kimura
裕彦 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP63033586A priority Critical patent/JPH0671021B2/en
Publication of JPH01208839A publication Critical patent/JPH01208839A/en
Publication of JPH0671021B2 publication Critical patent/JPH0671021B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

Abstract

PURPOSE:To improve heat-dissipating properties, and to form resin layers easily by respectively shaping the resin layer having excellent thermal conductivity on the other main surface side of a support plate and the resin layer having low thermal conductivity on one main surface side by a common molding die. CONSTITUTION:An outer lead for a chip-lead frame assembly is fitted into a groove 19 and held by a top force 14 and a bottom force 15 for a mold 11, and the underside of a support plate 2 is positioned under the state in which it is floated from the base of a molding void 16 at an interval L1. A first sealing resin 23 being fluidized by a pot 26 and having excellent thermal conductivity is pushed and injected to the whole or the greater part of the other main surface side of the support plate 2 from a gate 21, and a second sealing resin 24 having thermal conductivity lower than the first sealing resin 23 is pushed and injected to the whole or the greater part of one main surface side of the support plate 2. Two kinds of the sealing resins 23, 24 are formed easily by the common molding die 11, and a resin layer having superior thermal conductivity can be shaped on the underside side of the support plate 2.

Description

【発明の詳細な説明】 【産業上の利用分野〕 本発明は両主面に樹脂層ン有する樹脂封止型パワートラ
ンジスタや樹脂封止型電力用センタタップダイオードな
どの樹脂封止型電子装置め製造方法に関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention is applicable to resin-sealed electronic devices such as resin-sealed power transistors and resin-sealed power center tap diodes having resin layers on both main surfaces. Regarding the manufacturing method.

〔従来の技術〕[Conventional technology]

支持板の略全面を樹脂封止体にて被覆した樹脂封止型電
子装置がある。この種の手導体装置は放熱体等への取り
付けの際に絶縁シートラ必要としない。しかし、支持板
の下面側にも樹脂封止体の一部が形成さTLるため、支
持板の下面が露出したタイプの樹脂封止型子導体装置よ
り放熱性の点で不利である。従って、支持板の下面側の
樹脂封止体を厚さ0.5mm程度の薄い層にすることに
より、この不利!少なくしている。
There is a resin-sealed electronic device in which substantially the entire surface of a support plate is covered with a resin-sealed body. This type of hand conductor device does not require an insulating sheet roller when attached to a heat sink or the like. However, since a part of the resin sealing body is also formed on the lower surface of the support plate, it is disadvantageous in terms of heat dissipation than a resin-sealed child conductor device of the type in which the lower surface of the support plate is exposed. Therefore, by making the resin sealant on the lower surface side of the support plate a thin layer with a thickness of about 0.5 mm, this disadvantage can be avoided. I'm doing less.

〔発明が解決しようとする昧題〕[The problem that the invention attempts to solve]

しかし、パワートランジスタ等の大11流で使用する樹
脂刺止型電子装置では放熱性を少【−でも向上させる必
要がある。このため、樹脂層を薄く形成するだけでは不
十分である。また、樹脂層ケ薄く形成するにも強度と成
形性の点から賄界がある。
However, in resin-embedded electronic devices such as power transistors used in the 11th generation, it is necessary to improve heat dissipation even by a small amount. For this reason, simply forming a thin resin layer is insufficient. Further, there are limits to forming the resin layer thinly from the viewpoint of strength and moldability.

そこで、従来では放熱性(熱伝導性]に優れた制止樹脂
ya−使用することで、上記の要求に応えていた。し、
かじ、この糧の封止樹脂はコストが高いという欠唐ヲ有
し、又、熱伝導性を向上させるための結晶シリカ等の硬
質の物Sを多量に含有しているため、金型1%に封止樹
脂が圧力をかけて注入されるゲート部分を著しく摩耗さ
せ、?#J価な金型の耐用期間を短くするという欠点χ
有する。
Therefore, in the past, the above requirements were met by using a blocking resin ya- with excellent heat dissipation (thermal conductivity).
However, the sealing resin used in this product has the disadvantage of being expensive, and also contains a large amount of hard material S such as crystalline silica to improve thermal conductivity, so the mold is 1% The gate part where the sealing resin is injected under pressure is significantly worn out. #Disadvantage of shortening the service life of J-valent moldsχ
have

そこで1本発明の目的は、放熱性に優れている樹脂刺止
型電子装置を容易且つ低コストに製造することができる
方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for easily and inexpensively manufacturing a resin-embedded electronic device having excellent heat dissipation properties.

[fil!1を解決するだめの手段] 上記目的を遇成するための本発明は、リードフレームの
支持板の一方の主面に電子素子及び/又は胞路基叛が固
着されているリードフレーム組立体を用意する工程と、
前記支゛持板の一方の主面側と他方の主面側との両方を
樹脂刺止することができるように形成された成形空Pj
′rを有する成形用型を用意し、前記支持板の他方の主
面とこれに対向する前記成形空所の壁面との間隔が前記
支持板の一力の主面とこれに対向する前記成形空所の脅
面との間隔よりも小さくなるように前記リードフレーム
組立体を前記成形用型に配置する工程と、前記成形用型
の前記成形空所lζおける前記支持板の他方の主面側の
全部又は大部分に熱伝導性ζこ優4た第10封止樹脂′
%−流動化させた状態で押圧注入し、この第1の封止樹
脂の注入後に、前記支持板の一方の主面側の全部又は大
部分に前記第10封止樹脂より熱伝導性の低い第2の封
止樹脂を流動化させた状態で押圧注入して樹脂封止体を
得る工程とya−有する樹脂刺止型電子装置の製造方法
に係わるものである。
[fil! Means for Solving Problem 1] To achieve the above object, the present invention provides a lead frame assembly in which an electronic element and/or a circuit board is fixed to one main surface of a support plate of the lead frame. The process of
A molded hole Pj is formed so that both one main surface side and the other main surface side of the support plate can be pierced with resin.
A mold having a molding die having a distance of arranging the lead frame assembly in the mold so that the distance between the lead frame assembly and the threatening surface of the cavity is smaller than the distance between the lead frame assembly and the threatening surface of the mold, and the other main surface side of the support plate in the mold cavity lζ of the mold 10th sealing resin which has thermal conductivity in all or most of
% - Injected under pressure in a fluidized state, and after injecting the first sealing resin, a resin having lower thermal conductivity than the tenth sealing resin is applied to all or most of one main surface side of the support plate. The present invention relates to a method of manufacturing a resin-embedded electronic device including a step of press-injecting a second sealing resin in a fluidized state to obtain a resin-sealed body.

〔作 用〕[For production]

上記発明において、支持板の他方の主面@(下面側)に
熱伝導性の優r(た第1の封止樹脂を注入すると、ここ
に主として第1の封止樹脂から成る放熱性の良好な樹脂
層が得られる。−万、支持板の一方の主面@(上面側)
には主として第2の封止樹脂から成る放熱性の低い樹脂
層が得られる。
In the above invention, when the first sealing resin having excellent thermal conductivity is injected onto the other main surface @ (lower surface side) of the support plate, the first sealing resin mainly composed of the first sealing resin has good heat dissipation properties. A resin layer is obtained. - One main surface of the support plate @ (upper surface side)
A resin layer with low heat dissipation properties mainly consisting of the second sealing resin is obtained.

この2種類のm脂層は共通の成形用型で形成されるので
、成形用型のコストの上昇及び成形のための工程の大喝
な増加を抑えることができる。熱伝導性の良い樹脂は一
般に高いはかりでなく、成形用型を摩耗させる。しかし
1本発明では樹脂封止体の一部のみを熱伝導性の良い樹
脂層にしているので、コストの上昇及び底形用型の摩耗
を抑えることができる。
Since these two types of fat layers are formed using a common mold, it is possible to suppress an increase in the cost of the mold and a drastic increase in the number of molding steps. Resins with good thermal conductivity are generally not expensive and wear out molds. However, in the present invention, only a part of the resin sealing body is made of a resin layer with good thermal conductivity, so that it is possible to suppress an increase in cost and wear of the bottom mold.

〔実施例〕〔Example〕

第1図〜第11囚を参照し、て本発明の一実施例に係わ
る樹脂制止型パワートランジスタの表遣方法を説明する
With reference to FIGS. 1 to 11, a method for displaying a resin-sealed power transistor according to an embodiment of the present invention will be described.

まず、第11図に示すリードフレーム1を用意する。こ
のリードフレーム1は支持板2と、支持板2の一端lζ
配置された外部リード3と、外部リード3を並列ζζ連
結するタイバー4及び連結細条5を有する。実際のリー
ドフレーム1は初数の支持板2が装置さTした多累子取
り用となってい°る。
First, a lead frame 1 shown in FIG. 11 is prepared. This lead frame 1 includes a support plate 2 and one end lζ of the support plate 2.
It has external leads 3 arranged, tie bars 4 and connecting strips 5 that connect the external leads 3 in parallel. In actuality, the lead frame 1 is designed to take a multiplex element in which the first support plate 2 is mounted.

なお、6は外剖、放熱体への取rl付けに使用されるネ
ジの挿入用孔である。リードフレーム1には周知のダイ
ボンティング法により半湯体チップ7即ちトランジ、ス
タチツプが半田(図示せず)ヲ介して固着されている。
Note that 6 is a hole for inserting a screw used for external dissection and attachment to a heat sink. A semi-solid chip 7, that is, a transistor or a static chip is fixed to the lead frame 1 through solder (not shown) by a well-known die bonding method.

又1周知のワイヤボンディング法によりリード細線8が
接続されている。リード細線8は牛導体チップ7と外部
リード3を電気的にWWCする。こ71によりチップ・
リードフレーム組立体9が得らする。以下、チップ・リ
ードフレーム組立体9を単にリードフレーム組立体と呼
ぶ。リードフレームJi11立体9は第11図で膚腺で
示すように樹脂封止体10で被aされる。なお。
Further, thin lead wires 8 are connected by a well-known wire bonding method. The thin lead wire 8 electrically WWCs the conductor chip 7 and the external lead 3. With this 71, the chip
A lead frame assembly 9 is obtained. Hereinafter, the chip/lead frame assembly 9 will be simply referred to as a lead frame assembly. The three-dimensional lead frame Ji11 9 is covered with a resin sealant 10 as shown by the skin gland in FIG. In addition.

樹PIFIN止体10は後述から明らかlこなるように
2a類の樹脂から成る。
The tree PIFIN stopper 10 is made of resin of class 2a, as will be clear from the description below.

トランス7アモールド法によってm脂封止体10を形成
するために、リードフレーム組立体9を第1図に示すよ
うに金型11に配置する。金型11は上型14と下型1
5の他に、第1及び第2のスライド型12.13Y1j
している。スライド型12.13は上型14に対して相
対的に上下動可能となっている。上型14には凹部16
と円柱状の凸ff1s17が形成さfしており、凸If
!117は支持板2の孔61こ挿入されている。但し、
凸部17は孔6のFF3周面と&′L離間しているため
、孔60内周面には樹脂封止体10の一部が形成される
。下型15には凹部18.外部リード3の挿入用溝19
゜ランナ(樹脂流通路)20.ゲート(樹脂注入用口)
21が設けられている。上型14と下型15を閉じるこ
とで、凹部16と凸部17Iこより金型11内に樹脂封
止体10に対応した成形空所22が形成される。
In order to form the m-lipid sealing body 10 by the transformer 7 amolding method, the lead frame assembly 9 is placed in a mold 11 as shown in FIG. The mold 11 has an upper mold 14 and a lower mold 1
In addition to 5, the first and second slide molds 12.13Y1j
are doing. The slide molds 12 and 13 are movable up and down relative to the upper mold 14. The upper mold 14 has a recess 16
A cylindrical convex ff1s17 is formed f, and a convex If
! 117 is inserted into the hole 61 of the support plate 2. however,
Since the convex portion 17 is spaced apart from the peripheral surface of the FF 3 of the hole 6 by &'L, a part of the resin sealing body 10 is formed on the inner peripheral surface of the hole 60. The lower mold 15 has a recess 18. Groove 19 for inserting external lead 3
° Runner (resin flow path) 20. Gate (resin injection port)
21 are provided. By closing the upper mold 14 and the lower mold 15, a molding cavity 22 corresponding to the resin sealing body 10 is formed in the mold 11 through the concave portion 16 and the convex portion 17I.

リードフレーム組立体9の配置の際、外部リード6は溝
19#こ億合さtて上型14と下型15で挾持される。
When the lead frame assembly 9 is placed, the external leads 6 are held together by the upper die 14 and the lower die 15 with the grooves 19 # interlocked.

このため、支持&2の下面が成形空PJT16の底面か
ら0.5mm程展:の薄い間隔L1で浮いた状態で位置
決めされる。次に、スライド型12が下降し、その底面
が成形9.所16の底面から上記の薄い間隔L1と支持
板2の肉厚部の厚さを加えた間隔だけ離れて位置するよ
うに配置される。
Therefore, the lower surface of the support &2 is positioned in a state where it is floating at a thin distance L1 of about 0.5 mm from the bottom surface of the molded blank PJT 16. Next, the slide mold 12 is lowered and its bottom surface is molded 9. The support plate 2 is disposed so as to be spaced apart from the bottom surface of the support plate 16 by an interval equal to the above-mentioned thin interval L1 plus the thickness of the thick portion of the support plate 2.

従って、支持板2の外部リード3の連結された側と反対
側の端部が浮き上った支持板2であっても。
Therefore, even if the support plate 2 has a raised end on the side opposite to the side to which the external leads 3 are connected.

上記の反対側の端Sがスライド型12により押されて、
支持板2の下面と成形空&22の底面との間隔は安定に
薄い間隔Ll’!’保つ。本実施例ではリードフレーム
組立体9を配置し、上型14と下型15を閉じた後にス
ライド型12.13’l’上型14に対し進入させ第1
図に示す位置に配置した。
The opposite end S is pushed by the slide mold 12,
The distance between the lower surface of the support plate 2 and the bottom surface of the molding cavity &22 is a stably thin distance Ll'! 'keep. In this embodiment, the lead frame assembly 9 is arranged, and after the upper mold 14 and the lower mold 15 are closed, it is advanced to the slide mold 12.13'l' upper mold 14 and the first
It was placed in the position shown in the figure.

しかし、上型14と下型15を閉じる前に予めスライド
型12.13を上型14から成形空所22内に突出させ
ておいてもよい。
However, the slide mold 12.13 may be projected from the upper mold 14 into the molding cavity 22 before the upper mold 14 and the lower mold 15 are closed.

次に、第8図に示すように第1の封止樹脂23と第2の
制止樹脂24とが円柱状に一体化された樹脂ブロック2
5を第1図のボットC1f!B脂投入口)26に投入す
る。樹脂フロック25の下側の第1の制止樹脂26は、
結晶シリカ等の含有i!が多く熱伝導性に優れた樹脂で
あり1m2の制止樹脂24は第1の制止樹脂26に比べ
て結晶シリカ等の硬質物負の含有IIKが少なく熱伝導
性が低い樹脂である。なお、樹脂プクック25は超音波
加熱等によって軟化させてから、第1の制止樹脂23が
下側になるようにしてポット26に投入する。ポット2
6及び金型11を160℃程度に予め加熱しておくこと
により、ポット26に投入された樹脂ブロック25は溶
融し、流動化する。
Next, as shown in FIG. 8, a resin block 2 is formed in which the first sealing resin 23 and the second sealing resin 24 are integrated into a cylindrical shape.
5 to bot C1f in Figure 1! Pour into B fat inlet) 26. The first restraining resin 26 on the lower side of the resin flock 25 is
Contains crystalline silica etc. i! The 1 m 2 stopper resin 24 contains less IIK of hard substances such as crystalline silica than the first stopper resin 26, and has low thermal conductivity. The resin cooker 25 is softened by ultrasonic heating or the like, and then put into the pot 26 with the first restraining resin 23 facing downward. pot 2
By preheating the resin block 6 and the mold 11 to about 160° C., the resin block 25 placed in the pot 26 is melted and fluidized.

次に、ポット26内に転動自在に配tItさjているプ
ランジャC押し型)27によって樹脂ブロック25を押
圧し、流動化している第1及び第2の封止樹脂23.2
4をランナ20に111次に送り込む。なお、ポット2
6の径と樹脂ブロック25の径とけけは向−になってい
るため、第1及び第2の封止樹脂23.24が大きく混
ざり合うことはなく1分離された状態で111に供給さ
れる。この実施例ではポット26がこす【を中心に対称
に配置された2つの成形空15T22(1つは図示せず
)につながっているので、ar脂ツブロック252つの
樹脂刺止型トランジスタの樹脂封止体10を得るこがで
きる大きさに形成されている。
Next, the resin block 25 is pressed by a plunger 27 disposed in a rotatable manner in the pot 26, and the first and second sealing resins 23.2 which have been fluidized are pressed against the resin block 25.
4 is sent to the runner 20 in the 111st order. In addition, pot 2
Since the diameter of the resin block 6 and the diameter of the resin block 25 are in the opposite direction, the first and second sealing resins 23 and 24 are not mixed significantly and are supplied to the resin block 111 in a separated state. . In this embodiment, the pot 26 is connected to two molding cavities 15T22 (one not shown) arranged symmetrically with respect to the ar resin block 25, so that the two resin-sealed transistors are resin-sealed. It is formed to a size that allows the body 10 to be obtained.

第1の制止樹脂23を支持板2の下側に注入するために
、第1図に示す如く第1及び第2のスライドff112
.13を支持&2の上面に接するように下けておく。第
1のスライド型12は第9図に示すように切欠部12a
及び一対の脚部12b。
In order to inject the first restraining resin 23 into the lower side of the support plate 2, the first and second slides ff112 are moved as shown in FIG.
.. 13 is lowered so that it touches the top surface of support &2. The first slide mold 12 has a notch 12a as shown in FIG.
and a pair of legs 12b.

12cV有する。一方、第2のスライド型13は第10
図に示すように切欠部を有さない。第1及び第2のスラ
イドfJ!12.13にはそれぞれの駆動装置28.2
9が結合さ4.それぞ4が独立に上下動可能である。
It has 12 cV. On the other hand, the second slide mold 13 is
As shown in the figure, it does not have a notch. First and second slides fJ! 12.13 each drive 28.2
9 is combined 4. Each of the four can be moved up and down independently.

第1のスライド型12の切欠部12aには、第1図から
明らかなように上型14に設けられた突出部14aが挿
入されている。この突出部14aの下面は支持板2の止
面に対【、て樹脂封止体10の厚さ相当の間隙を胸する
。従って、突出部14aは第1のスライド型12の切欠
部12aの一部のみを埋める。
As is clear from FIG. 1, a protrusion 14a provided on the upper die 14 is inserted into the notch 12a of the first slide die 12. As shown in FIG. The lower surface of the protrusion 14a forms a gap equivalent to the thickness of the resin sealing body 10 with respect to the stop surface of the support plate 2. Therefore, the protrusion 14a fills only a part of the notch 12a of the first slide mold 12.

この実施例ではケート21が支持板2の上面以下に配a
さT(ている。従って、第1及び第20スライド型12
.13の下端が支持板2に接している第1図の状態にお
いて、ゲート21は支持板2の下側にはつながっている
が、上側にはつなかっていない。第1図の状態で1ラン
ジヤ27を押圧すると、第1の封止樹脂23がランナ2
0とゲート21とを成形空所22の下側即ち支持板2の
下側に注入さrIる。#!1の封止樹脂23V支持体2
の下側にW圧注入すると、支持″4!124ことrLを
浮き上げる方向の力が作用するが、#!1及び第2のス
ライド型12.13によって阻止されているので支持板
2の移動は生じない。なお、支持板2の側面とH,形空
所22の壁面との間隔は0.8mm程度であるので、支
持鈑2の下側から側面を・通っての上側への樹脂の流動
は匍1限さ11.第1の封止樹脂は主として支持板2の
下側に注入さ1+る。また。
In this embodiment, the cage 21 is disposed below the upper surface of the support plate 2.
Therefore, the first and 20th slide molds 12
.. In the state shown in FIG. 1 where the lower end of the gate 13 is in contact with the support plate 2, the gate 21 is connected to the lower side of the support plate 2, but not to the upper side. When the first runner 27 is pressed in the state shown in FIG.
0 and the gate 21 are injected into the lower side of the molding cavity 22, that is, the lower side of the support plate 2. #! 1 sealing resin 23V support 2
When W pressure is injected to the lower side, a force is applied in the direction of lifting the support "4!124" or "rL," but since it is blocked by #!1 and the second slide mold 12.13, the movement of the support plate 2 is Note that since the distance between the side surface of the support plate 2 and the wall surface of the H-shaped cavity 22 is approximately 0.8 mm, the resin will not flow from the bottom of the support plate 2 to the top through the side surface. The flow is limited to 11. The first sealing resin is mainly injected into the lower side of the support plate 2. Also.

第1図に示されていないが、ポット26の右1111の
ランナ20.ゲート21.成形空所22と1iin−形
状のものがボッ)26’に中心にして左側にも設けられ
ている。2つの成形空所22に至るランナ20の長さは
同一であるので、樹脂は同一の割合で注入される。
Although not shown in FIG. 1, the runner 20. on the right 1111 of pot 26. Gate 21. A forming cavity 22 and an in-shape are also provided to the left of the center of the box 26'. Since the lengths of the runners 20 leading to the two molding cavities 22 are the same, the resin is injected at the same rate.

プランジャ270位宜等から支持仮置の下側が第10封
止樹脂23で充填されたことが判ったら。
If it is found from the position of the plunger 270 that the lower side of the temporary support is filled with the tenth sealing resin 23.

第2のスライド型13を第2図及び第5脂に示すように
上方に移動させる。第1のスうイド型12は移動させな
いので、支持板2の上方への移動は阻止されている。ゲ
ート21から注入された樹脂はJ1!M4の突出s 1
4 aの下及び第2のスライド型16の下を通って支持
板2の上側lζ流入する。
The second slide mold 13 is moved upward as shown in Fig. 2 and Fig. 5. Since the first slide die 12 is not moved, upward movement of the support plate 2 is prevented. The resin injected from gate 21 is J1! M4 protrusion s 1
4a and the second slide mold 16 to flow into the upper side lζ of the support plate 2.

なお、支持板2の上側には第2の封止樹脂24又は第1
0掴止樹脂23の残りと第2の封止樹脂24が流入する
Note that the second sealing resin 24 or the first
The remainder of the zero gripping resin 23 and the second sealing resin 24 flow in.

支持板2の上側の手分以上が第2の封止樹脂24で充填
された時廃で第1のスライド型12を第3崗及び第6図
fこ示すように上方へ移動する。これにより、第1のス
ライドW12の脚1’lS12 b。
When the upper part of the support plate 2 is filled with the second sealing resin 24, the first slide mold 12 is moved upward to the third stage and as shown in FIG. This causes the leg 1'lS12b of the first slide W12.

12cが空所となり、ここにも第2の封止樹脂24が充
填される。m3囚及び第6図の状態では支持板2が#!
1及び第2のスライド型12.13r位置決めされてい
ないが、支持板2の下側に先に第1の封止樹脂26が充
填さr(、支持板2の上側の大部分にも!2の封止樹脂
24が充填されているので、支持板2の上下動は殆んど
住じない。注入樹脂が固化した後に金ff111からリ
ードフレーム組立体9を取り出し、タイバ及び連結細条
5を除去することによって第7囚に示すようにml及び
第2の封止樹脂層23a、24aから成る樹脂封止体1
01ζよって外部リード3以外の全部ン被榎した樹脂封
止型トランジスタが得ら4る。なお。
12c becomes a void, which is also filled with the second sealing resin 24. In the case of m3 prisoner and the state shown in Fig. 6, the support plate 2 is #!
Although the first and second slide molds 12 and 13r are not positioned, the lower side of the support plate 2 is first filled with the first sealing resin 26 (and most of the upper side of the support plate 2 is also filled!2 Since the sealing resin 24 is filled, vertical movement of the support plate 2 hardly occurs.After the injected resin has solidified, the lead frame assembly 9 is taken out from the metal FF111, and the tie bars and connecting strips 5 are removed. By removing it, the resin sealing body 1 consisting of the ml and the second sealing resin layers 23a and 24a as shown in the seventh column.
01ζ, a resin-sealed transistor in which all parts except the external lead 3 are sealed is obtained. In addition.

支持板2の下面側の封止樹脂層23aは、主として第1
の封止樹脂23から成る熱伝導性に優れた樹脂層でトリ
、支持板2の上面側の刺止樹脂層24aは第1の封止樹
脂層23aよりも熱伝導性が劣る主として第2の封止樹
脂24から成る樹脂層である。ml及び第2の封止樹脂
層23a、24aは共にエポキシ系樹脂であるので互い
に強固に密着している。
The sealing resin layer 23a on the lower surface side of the support plate 2 mainly consists of the first
The sealing resin layer 24a on the upper surface side of the support plate 2 is mainly composed of a second sealing resin layer 23a having a lower thermal conductivity than the first sealing resin layer 23a. This is a resin layer made of sealing resin 24. Since both the ml and second sealing resin layers 23a and 24a are made of epoxy resin, they are tightly adhered to each other.

不実施例は次の効果を有する。The non-embodiment has the following effects.

+11  支持板2の下面側と上面側とに異なる刺止樹
脂層23a、24aY容易に形成することができる。
+11 Different pricking resin layers 23a, 24aY can be easily formed on the lower surface side and the upper surface side of the support plate 2.

(2;  支持板2の下面側に熱伝導性に優れた樹脂層
23aを形成できる。このため、放熱性に優れた樹脂封
止型半導体装tltyr提供できる。
(2; The resin layer 23a with excellent thermal conductivity can be formed on the lower surface side of the support plate 2. Therefore, it is possible to provide a resin-sealed semiconductor device tltyr with excellent heat dissipation.

131  支持板2の上面側の樹脂層24aは半導体チ
ップ7の発熱の放熱にさほど関与しないので。
131 The resin layer 24a on the upper surface side of the support plate 2 does not contribute much to the radiation of heat generated by the semiconductor chip 7.

一般ニ低コストの熱伝導性に劣る樹脂を使用できる。従
って、低コストの樹脂封止型半導体装置を提供できる。
In general, low-cost resins with poor thermal conductivity can be used. Therefore, a low-cost resin-sealed semiconductor device can be provided.

(41*W11を摩耗させるシリカ等を多く含む第1の
封+h樹脂23は樹脂封止体10の一部ン形成するのみ
であるので、この使用量が少なくなり。
(The first sealing + h resin 23, which contains a large amount of silica etc. that wears out the W11, forms only a portion of the resin sealing body 10, so the amount used is reduced.

金型11のゲート21等の摩耗を低減し、耐用期間を増
大することができる。
Wear of the gate 21 and the like of the mold 11 can be reduced and the service life can be increased.

(5)  検数の成形空所22に共通のボット26から
廷びるランナ20の長さが等しくなっている。
(5) The lengths of the runners 20 that extend from the common bot 26 to the molding spaces 22 of the counts are equal.

従って、それぞれの成形空PJr22に注入される第1
の封止樹脂26の量が略等しくなる。また、第2の封止
樹脂24についても同様である。このため、放熱特性等
にバラツキを住じることがない。
Therefore, the first injected into each forming air PJr22
The amounts of the sealing resin 26 are approximately equal. The same applies to the second sealing resin 24. Therefore, there is no variation in heat dissipation characteristics, etc.

(61ポット26から砥びるランナ20の長さが等しく
なっている。従って、成形空所22内に注入される制止
樹脂の童はプランジャ27の高さ憂こ依存する。このた
め、スライド型12.13の引抜き時点が1ランジヤ2
7の高さ位置に基づいて制御でき、スライド型1113
の移動制御が容易である。
(61 The lengths of the runners 20 sharpened from the pot 26 are equal. Therefore, the amount of stopper resin injected into the molding cavity 22 depends on the height of the plunger 27. .13 is pulled out at 1 runge 2
Can be controlled based on the height position of 7, sliding type 1113
Easy to control movement.

(7)  第1及び第2のスライド型12.13を使用
するので、支持板2の高さ位置を一定に保ちながら支持
l&2の下側と上側に区別して樹脂を注入することが可
能になる。
(7) Since the first and second slide molds 12.13 are used, it is possible to separately inject resin into the lower and upper sides of supports L & 2 while keeping the height position of support plate 2 constant. .

〔変形例〕[Modified example]

本発明は上述の実施例に限定されるものでなく。 The invention is not limited to the embodiments described above.

例えば次の変形が可能なものである。For example, the following transformations are possible.

+11  第12囚に示すように、ゲート21の一部が
支持板2の上面よりも上側に位置し、残部が上面よりも
下側に位置するようにしてもよい。このth合、第iの
スライド型12のMIIIS12b、12Cの位置する
th P′jrがゲート21に直接に通じているので、
スライド型12の引抜きが遅くなっても。
+11 As shown in the 12th prisoner, a part of the gate 21 may be located above the top surface of the support plate 2, and the remaining part may be located below the top surface. In this case, since th P'jr where MIIIS 12b and 12C of the i-th slide mold 12 are located directly communicates with the gate 21,
Even if the slide die 12 is pulled out slowly.

スライド型12の脚部12b、12cの位@ 1.た箇
所に確実に樹脂を注入することができる。
Legs 12b and 12c of slide mold 12 @1. The resin can be reliably injected into the places where the resin has been removed.

(2)  第10封止樹脂26と第2の封止樹脂24と
を樹脂ブロック25とせすに1分離してもよいOこの場
合、初めに第1の封止樹脂23を注入し、次に第2の封
止樹脂24を注入する。
(2) The tenth sealing resin 26 and the second sealing resin 24 may be separated by one part each from the resin block 25. In this case, first the first sealing resin 23 is injected, and then A second sealing resin 24 is injected.

(3+  ゲート21につながるランチ20が2本に分
れ、一方のランチにつながるポットに第1の封止樹脂2
6を投入し、他方のランチにつながるポットに第2の封
止樹脂24を投入してもよい。
(3+ The launch 20 connected to the gate 21 is divided into two, and the first sealing resin 2 is placed in the pot connected to one of the launches.
6, and the second sealing resin 24 may be added to the pot connected to the other lunch.

+41  第13因に示すように第1の制止樹脂26用
のグー)2.1a及びランナ20aと第2の制止樹脂2
4用のグー)21 b及びランナ20bとを分離して設
けてもよい。この場合、熱伝導性に優れた第1の制止樹
脂26用のゲート21aを支持板2の上面よりも下方に
設け、第2の制止樹脂24用のグー)21bを支持板2
の上面よりも上方に設けるのが良い。第1の制止樹脂2
6の注入σ)際は第2の制止樹脂24用のゲート21b
を第2のスライド型16にて閉塞しておく。このと?t
+41 As shown in the 13th factor, goo for the first restraining resin 26) 2.1a, the runner 20a and the second restraining resin 2
The runner 21b and the runner 20b may be provided separately. In this case, a gate 21a for the first restraining resin 26 with excellent thermal conductivity is provided below the upper surface of the support plate 2, and a gate 21b for the second restraining resin 24 is provided on the support plate 2.
It is best to provide it above the top surface of the First restraining resin 2
6 injection σ), the gate 21b for the second restraining resin 24
is closed with a second slide mold 16. With this? t
.

2つのランナ20a、20bは同一のポ゛ノドにつなが
っていてもよいし、別々のボ゛ノドにつながっていても
よい◎ (51第2のスライド型13のみであってもよい。
The two runners 20a and 20b may be connected to the same port or may be connected to separate ports. (51 Only the second slide mold 13 may be used.

この場合、支持板2の固定を確実とするため、上型14
及び下型15に支持板2の固定用ビンが設けられた金型
な使用するか、支持板2の外部り−ド3の連結さ才した
側と反対側の端部から位置決め用のリードが導出さtた
リードフレームを使用するのが望ましい。
In this case, in order to securely fix the support plate 2, the upper mold 14
Use a mold in which the lower mold 15 is provided with a pin for fixing the support plate 2, or use a positioning lead from the end of the support plate 2 opposite to the connecting slanted side of the outer lead 3. It is desirable to use a derived lead frame.

(61支持板2の上面側と下面側へと流れる樹脂を分離
する手段はスライド型12.13を用いたものでなくて
もよい。例えば、第14図及び第15図に示す如(2つ
のゲート21 a、21 bを設け、上型14のゲート
21b近傍に突出部30を設け、下方のゲート21aか
も注入さiる樹脂は前記突出部30により上面へと流れ
にくくシ、主に下面へと流【5.上方のグー)21 b
から注入される樹脂は突出fB530による抑制を受け
ずスムーズに支持板2の上面へと流れるようにしてもよ
し・。
(61 The means for separating the resin flowing to the upper surface side and the lower surface side of the support plate 2 does not need to be the one using the slide mold 12.13. For example, as shown in FIGS. 14 and 15 (two Gates 21 a and 21 b are provided, and a protrusion 30 is provided near the gate 21 b of the upper die 14 , so that the resin injected into the lower gate 21 a is difficult to flow to the upper surface due to the protrusion 30 and mainly flows to the lower surface. Toryu [5. Upper Goo] 21 b
The resin injected from the base plate 2 may be allowed to flow smoothly to the upper surface of the support plate 2 without being restrained by the protrusion fB530.

(71支持板2の外部リード3の連結さすした側と反対
側の端部から位置決め用のリードを延ばし。
(71 Extend the positioning lead from the end of the support plate 2 on the opposite side to the side where the external lead 3 is connected.

支持板2を金型11で両持ち支持するタイプのリードフ
レームも使用できる。
A lead frame in which the support plate 2 is supported on both sides by the mold 11 can also be used.

(81エポキシ樹脂のような熱硬化性樹脂(こ限ること
なく、熱可塑性樹脂を使用する場合にも適用可能である
(Thermosetting resins such as 81 epoxy resins (not limited to this) can also be applied when using thermoplastic resins.

(91トランジスタに1恨ることな(、ダイオード装置
、複合半導体素子、工C等の電子装置にも適用可能であ
る。
(Don't begrudge 91 transistors.) It can also be applied to electronic devices such as diode devices, composite semiconductor devices, and electronic devices.

[発明の効果] 以上のように1本発明によれば放熱性に優れ且つコスト
の安い樹脂側止型電子装置を容易に卿造することができ
る。また成形用型の摩耗を低減させることができる。
[Effects of the Invention] As described above, according to the present invention, it is possible to easily manufacture a resin-side stop type electronic device that has excellent heat dissipation properties and is inexpensive. Furthermore, wear of the molding die can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例をこ係わる樹脂側止型トランジ
、スタの製造Gこ使用する金型とチップ・リードフレー
ム組立体との関係を第11図のT−1Mに対応する部分
で示す断面図。 第2図は第1図の金型の第2のスライド型を上方lこ移
動じた状態を示す断面図。 第3図は第1図の金型の第1及び第2のスライド型を上
方に移動した状態を示す断面図。 第4図は第1図のIV −rV線6r、対に、する部分
の断面図。 第5図は第2図のV−マ線に対応する部分の断面図。 第6図は第3図のW−%I細に対応する部分の断面図。 第7図は光取した樹脂封止型トランジスタを示す一部切
欠断面図。 第8図は第1図のポットに投入する樹脂ブロックを示す
斜視図。 第9図1は第1のスライド型を示す斜視図。 第10図は第2のスライド型を示す斜視図。 第11図は第11i!!Jのリードフレーム和文体を示
す平面図。 第12図は金型の変形例を示す第1図に対発する部分の
断面図。 第16図は金型の別の変形例を示す第1図Cζ対応する
部分の断面図。 第14図は金型の史lこ別の変形例を示す第1図に対応
する部分の断面図。 第15図は第14図のXV −IV腺を示す断面図であ
る。 1・・・リードフレーム、2・・支持板、7・・・チッ
プ。 9・・・リードフレーム組立体、10・・・樹脂封止体
。 11・・・金型、12・・・第1の、スライド型、13
・・・第2の、スライド型、14・・・上型、15・・
・下型、22・・・R形窒所、26・・・第1の封止樹
脂、24・・・第2の制止樹脂。 代  理  人   高  野  則  次第4図 第5図 第11図 −エ
FIG. 1 shows the relationship between the mold and the chip/lead frame assembly used in the manufacture of a resin side-stop type transistor and star according to an embodiment of the present invention, and is shown in a section corresponding to T-1M in FIG. 11. A sectional view shown. FIG. 2 is a sectional view showing a state in which the second slide mold of the mold shown in FIG. 1 has been moved upward. FIG. 3 is a sectional view showing a state in which the first and second slide molds of the mold shown in FIG. 1 have been moved upward. FIG. 4 is a cross-sectional view of a portion corresponding to the IV-rV line 6r in FIG. 1. FIG. 5 is a sectional view of a portion corresponding to the V-line in FIG. 2. FIG. 6 is a sectional view of a portion corresponding to the W-%I line in FIG. 3. FIG. 7 is a partially cutaway sectional view showing a resin-sealed transistor with light extraction. FIG. 8 is a perspective view showing a resin block to be put into the pot of FIG. 1. FIG. 9 1 is a perspective view showing the first slide mold. FIG. 10 is a perspective view showing the second slide mold. Figure 11 is 11i! ! A plan view showing the lead frame Japanese style of J. FIG. 12 is a sectional view of a portion opposite to FIG. 1 showing a modified example of the mold. FIG. 16 is a sectional view of a portion corresponding to FIG. 1 Cζ showing another modification of the mold. FIG. 14 is a cross-sectional view of a portion corresponding to FIG. 1 showing a modified example of the history of the mold. FIG. 15 is a sectional view showing the XV-IV gland of FIG. 14. 1... Lead frame, 2... Support plate, 7... Chip. 9... Lead frame assembly, 10... Resin sealing body. 11... Mold, 12... First slide mold, 13
...Second slide mold, 14...Upper mold, 15...
- Lower mold, 22... R-shaped nitrogen, 26... first sealing resin, 24... second restraining resin. Agent Nori Takano Figure 4 Figure 5 Figure 11-E

Claims (1)

【特許請求の範囲】 〔1〕リードフレームの支持板の一方の主面に電子素子
及び/又は回路基板が固着されているリードフレーム組
立体を用意する工程と、 前記支持板の一方の主面側と他方の主面側との両方を樹
脂封止することができるように形成された成形空所を有
する成形用型を用意し、前記支持板の他方の面とこれに
対向する前記成形空所の壁面との間隔が前記支持板の一
方の主面とこれに対向する前記成形空所の壁面との間隔
よりも小さくなるように前記リードフレーム組立体を前
記成形用型に配置する工程と、 前記成形用型の前記成形空所における前記支持板の他方
の主面側の全部又は大部分に熱伝導性に優れた第1の封
止樹脂を流動化させた状態で押圧注入し、この第1の封
止樹脂の注入後に、前記支持板の一方の主面側の全部又
は大部分に前記第1の封止樹脂より熱伝導性の低い第2
の封止樹脂を流動化させた状態で押圧注入して樹脂封止
体を得る工程と を有する樹脂封止型電子装置の製造方法。
[Scope of Claims] [1] A step of preparing a lead frame assembly in which an electronic element and/or a circuit board is fixed to one main surface of a support plate of a lead frame, and one main surface of the support plate. A molding mold having a molding cavity formed so that both the side and the other main surface side can be resin-sealed is prepared, and the other side of the support plate and the molding cavity opposite thereto are prepared. arranging the lead frame assembly in the molding mold such that the distance between the lead frame assembly and the wall surface of the molding cavity is smaller than the distance between one main surface of the support plate and the wall surface of the molding cavity facing thereto; , a first sealing resin having excellent thermal conductivity is press-injected in a fluidized state into all or most of the other main surface side of the support plate in the molding cavity of the mold; After injecting the first sealing resin, a second sealing resin having lower thermal conductivity than the first sealing resin is applied to all or most of one main surface side of the support plate.
A method for manufacturing a resin-sealed electronic device, comprising the step of press-injecting a fluidized sealing resin to obtain a resin-sealed body.
JP63033586A 1988-02-16 1988-02-16 Method for manufacturing resin-sealed electronic device Expired - Fee Related JPH0671021B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63033586A JPH0671021B2 (en) 1988-02-16 1988-02-16 Method for manufacturing resin-sealed electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63033586A JPH0671021B2 (en) 1988-02-16 1988-02-16 Method for manufacturing resin-sealed electronic device

Publications (2)

Publication Number Publication Date
JPH01208839A true JPH01208839A (en) 1989-08-22
JPH0671021B2 JPH0671021B2 (en) 1994-09-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP63033586A Expired - Fee Related JPH0671021B2 (en) 1988-02-16 1988-02-16 Method for manufacturing resin-sealed electronic device

Country Status (1)

Country Link
JP (1) JPH0671021B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111768A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor device of resin sealing type
JPS62219642A (en) * 1986-03-20 1987-09-26 Hitachi Ltd Resin package type electronic part
JPH01205431A (en) * 1988-02-10 1989-08-17 Sanken Electric Co Ltd Manufacture of resin-sealed electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111768A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor device of resin sealing type
JPS62219642A (en) * 1986-03-20 1987-09-26 Hitachi Ltd Resin package type electronic part
JPH01205431A (en) * 1988-02-10 1989-08-17 Sanken Electric Co Ltd Manufacture of resin-sealed electronic device

Also Published As

Publication number Publication date
JPH0671021B2 (en) 1994-09-07

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