JPH0637130A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0637130A JPH0637130A JP21217492A JP21217492A JPH0637130A JP H0637130 A JPH0637130 A JP H0637130A JP 21217492 A JP21217492 A JP 21217492A JP 21217492 A JP21217492 A JP 21217492A JP H0637130 A JPH0637130 A JP H0637130A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor chip
- cavity
- movable pin
- pins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フィルムキャリヤやリ
ードフレーム等のリード構造体に搭載した半導体チップ
をトランスファモールド法によって樹脂封止するように
した半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor chip mounted on a lead structure such as a film carrier or a lead frame is resin-sealed by a transfer molding method.
【０００２】[0002]
【従来の技術】半導体チップの実装技術の一つとして、
ＴＡＢ（Tape automated Bonding）方式が知られてい
る。このＴＡＢ方式は、図５（ａ）に示すように、ポリ
イミド樹脂等からなる可撓性かつ絶縁性を有するフィル
ム基材２上にＣｕ箔等の導電性金属材料からなる複数の
リード３を形成してなるフィルムキャリヤ１を用い、そ
れら各リード３と半導体チップ４に形成された複数の電
極とを一括して接合する方式である。2. Description of the Related Art As one of semiconductor chip mounting technologies,
A TAB (Tape automated Bonding) method is known. In this TAB method, as shown in FIG. 5A, a plurality of leads 3 made of a conductive metal material such as Cu foil are formed on a flexible and insulating film substrate 2 made of a polyimide resin or the like. This is a system in which the respective leads 3 and a plurality of electrodes formed on the semiconductor chip 4 are collectively joined by using the film carrier 1 formed as described above.
【０００３】そして、従来から、ＴＡＢ方式において半
導体チップ４を保護のために樹脂封止する方法の一つと
して、主にトランスファモールド法が用いられている。
このトランスファモールド法は、図５（ａ）に示すよう
に、半導体チップ４が搭載されたフィルムキャリヤ１を
上金型１１と下金型１２とからなる樹脂成形金型によっ
て挟持し、加熱溶融した樹脂２０を加圧して上金型１１
及び下金型１２のゲート１３及び１４からキャビティ１
５及び１６内に注入して固化させる方法である。Conventionally, the transfer mold method has been mainly used as one of the methods of resin-sealing the semiconductor chip 4 for protection in the TAB method.
In this transfer molding method, as shown in FIG. 5A, a film carrier 1 having a semiconductor chip 4 mounted thereon is sandwiched by a resin molding die including an upper die 11 and a lower die 12 and heated and melted. Press the resin 20 and press the upper mold 11
And the cavity 13 from the gates 13 and 14 of the lower mold 12.
It is a method of injecting into 5 and 16 and solidifying.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、ＴＡＢ
方式におけるフィルムキャリヤ１は極めて薄くかつ可撓
性を有しているため、半導体チップ４を樹脂封止する際
に、キャビティ１５及び１６内における樹脂２０の流動
バランスの変動の影響を受け、半導体チップ４が上下に
変動してしまうという問題があった。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
Since the film carrier 1 in the method is extremely thin and flexible, when the semiconductor chip 4 is sealed with resin, it is affected by the fluctuation of the flow balance of the resin 20 in the cavities 15 and 16, and the semiconductor chip is affected. There was a problem that 4 moved up and down.
【０００５】即ち、図５（ａ）に示すように、通常、半
導体チップ４は樹脂モールドの中央で封止されるように
キャビティ１５及び１６内の中央に位置させるが、その
半導体チップ４がフェイスダウンでフィルムキャリヤ１
に搭載されている場合には、半導体チップ４側であるキ
ャビティ１５の容積がキャビティ１６の容積よりも大き
くなる。このため、図５（ｂ）に示すように、注入され
た樹脂２０はキャビティ１５内で流動し易くキャビティ
１６内で流動し難くなり、この樹脂２０の流動バランス
の変動によって、半導体チップ４が下方に変動してしま
う。そして、このような状態になると、樹脂２０の流動
バランスの変動はさらに大きくなり、半導体チップ４の
変動量がさらに増大する。That is, as shown in FIG. 5 (a), the semiconductor chip 4 is normally positioned in the center of the cavities 15 and 16 so as to be sealed in the center of the resin mold. Film carrier 1 down
In the case of being mounted on the semiconductor chip 4, the volume of the cavity 15 on the semiconductor chip 4 side is larger than the volume of the cavity 16. For this reason, as shown in FIG. 5B, the injected resin 20 easily flows in the cavity 15 and becomes difficult to flow in the cavity 16, and the semiconductor chip 4 moves downward due to fluctuations in the flow balance of the resin 20. Will fluctuate. Then, in such a state, the fluctuation of the flow balance of the resin 20 further increases, and the fluctuation amount of the semiconductor chip 4 further increases.
【０００６】なお、キャビティ１６側への樹脂注入量や
樹脂注入圧をキャビティ１５側よりも大きくすることに
よって、樹脂２０の流動バランスをとることが考えられ
るが、これらの調整は非常に微妙なものが要求されるの
で極めて困難であり、場合によっては、図５（ｃ）に示
すように、半導体チップ４が上方に変動してしまうこと
もある。It is possible to balance the flow of the resin 20 by increasing the resin injection amount and the resin injection pressure into the cavity 16 side than in the cavity 15 side, but these adjustments are very delicate. Is extremely difficult, and in some cases, as shown in FIG. 5C, the semiconductor chip 4 may fluctuate upward.
【０００７】このように、樹脂封止時の半導体チップ４
の上下変動によって、フィルムキャリヤ１または半導体
チップ４の表面露出や、フィルムキャリヤ１即ちリード
３の変形等が発生し、樹脂モールドの成形が非常に不安
定になるという問題があった。Thus, the semiconductor chip 4 at the time of resin sealing
Due to the vertical movement of the film carrier, the surface of the film carrier 1 or the semiconductor chip 4 is exposed, the film carrier 1, that is, the leads 3 is deformed, and the molding of the resin mold becomes very unstable.
【０００８】なお、上述したフィルムキャリヤに限ら
ず、導電性材料によって形成されるリードフレームにお
いても、狭ピッチ・多ピン化の要求の中で、そのリード
フレームの薄膜化が進むと、半導体チップの樹脂封止時
に同様な問題が生じてくる。Not only the above-mentioned film carrier but also a lead frame formed of a conductive material is required to have a narrower pitch and a larger number of pins. A similar problem arises at the time of resin sealing.
【０００９】そこで本発明は、フィルムキャリヤやリー
ドフレーム等のリード構造体に搭載された半導体チップ
をトランスファモールド法によって樹脂封止する際に、
樹脂の流動バランスの変動に起因する半導体チップの上
下変動を未然に防止できるようにした半導体装置の製造
方法を提供することを目的とする。Therefore, the present invention, when a semiconductor chip mounted on a lead structure such as a film carrier or a lead frame is resin-sealed by a transfer molding method,
It is an object of the present invention to provide a method for manufacturing a semiconductor device capable of preventing vertical fluctuation of a semiconductor chip due to fluctuation of resin flow balance.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、半導体チップを搭載したリード構造体を
上金型及び下金型によって挟持し、前記上金型及び下金
型のキャビティ内に樹脂を注入して前記半導体チップを
樹脂封止するようにした半導体装置の製造方法におい
て、前記上金型及び下金型の少なくとも一方に進退自在
に設けた可動ピンを前記キャビティ内に進入させてその
可動ピンの先端を前記リード構造体または前記半導体チ
ップに当接させ、前記キャビティ内における前記樹脂の
注入状態に応じて前記可動ピンを後退させつつ前記半導
体チップを樹脂封止するものである。In order to achieve the above-mentioned object, the present invention has a structure in which a semiconductor chip mounted lead structure is sandwiched between an upper mold and a lower mold, and the upper mold and the lower mold have the same structure. In a method of manufacturing a semiconductor device in which a resin is injected into a cavity to seal the semiconductor chip with a resin, a movable pin provided in at least one of the upper mold and the lower mold so as to be movable back and forth is provided in the cavity. A structure in which the tip of the movable pin is brought into contact with the lead structure or the semiconductor chip, and the semiconductor chip is resin-sealed while retracting the movable pin according to the injection state of the resin in the cavity. Is.
【００１１】また、本発明は、半導体チップを搭載した
リード構造体を上金型及び下金型によって挟持し、前記
上金型及び下金型のキャビティ内に樹脂を注入して前記
半導体チップを樹脂封止するようにした半導体装置の製
造方法において、前記上金型及び下金型の少なくとも一
方に進退自在に設けた可動ピンをキャビティ内に進入さ
せ、前記キャビティ内における前記樹脂の注入状態に応
じて前記可動ピンを後退させつつ前記半導体チップを樹
脂封止するものである。Further, according to the present invention, a lead structure having a semiconductor chip mounted thereon is sandwiched between an upper mold and a lower mold, and a resin is injected into the cavities of the upper mold and the lower mold to form the semiconductor chip. In a method of manufacturing a semiconductor device that is resin-sealed, a movable pin that is provided so as to advance and retract in at least one of the upper mold and the lower mold is inserted into a cavity, and the resin is injected into the cavity. Accordingly, the semiconductor chip is resin-sealed while retracting the movable pin.
【００１２】なお、前記リード構造体として絶縁性のフ
ィルム基材上に導電性のリードを形成してなるフィルム
キャリヤを用いるとよい。As the lead structure, it is preferable to use a film carrier formed by forming conductive leads on an insulating film base material.
【００１３】さらに、前記リード構造体として導電性材
料によって形成されたリードフレームを用いてもよい。Further, a lead frame made of a conductive material may be used as the lead structure.
【００１４】[0014]
【作用】上記のように構成された本発明によれば、可動
ピンをキャビティ内に進入させてその可動ピンの先端を
リード構造体または半導体チップに当接させることによ
って、リード構造体及び半導体チップをキャビティ内の
定位置に保持する。また、キャビティ内に進入させた可
動ピンによって、キャビティ内における樹脂の流動を制
御する。これによって、キャビティ内における樹脂の流
動バランスの変動に起因する半導体チップの上下変動が
防止される。そして、何れの場合も、可動ピンを樹脂の
注入状態に応じてキャビティ内から後退させることによ
って、成形される樹脂モールドの外観は従来と全く同様
になる。According to the present invention configured as described above, the lead structure and the semiconductor chip are made by advancing the movable pin into the cavity and bringing the tip of the movable pin into contact with the lead structure or the semiconductor chip. Hold in place in the cavity. Further, the flow of the resin in the cavity is controlled by the movable pin that has entered the cavity. This prevents vertical movement of the semiconductor chip due to fluctuations in the resin flow balance in the cavity. In either case, the appearance of the molded resin mold becomes exactly the same as the conventional one by retracting the movable pin from the inside of the cavity according to the injection state of the resin.
【００１５】[0015]
【実施例】以下、本発明の実施例を図１〜図４を参照し
て説明する。なお、前記従来例と実質的に同一の構成部
材には同一の符号を付してその説明を省略する。Embodiments of the present invention will be described below with reference to FIGS. The constituents substantially the same as those of the conventional example are designated by the same reference numerals, and the description thereof will be omitted.
【００１６】まず、図１及び図２は第１実施例を示すも
のである。図１（ａ）及び図２に示すように、本実施例
において使用するフィルムキャリヤ１は、前述と同様
に、フィルム基材２とこのフィルム基材２上に形成され
た複数のリード３とからなり、樹脂封止前には半導体チ
ップ４の各電極が各リード３に接合されている。First, FIGS. 1 and 2 show a first embodiment. As shown in FIGS. 1 (a) and 2, the film carrier 1 used in this embodiment includes a film base 2 and a plurality of leads 3 formed on the film base 2, as described above. Therefore, each electrode of the semiconductor chip 4 is bonded to each lead 3 before the resin sealing.
【００１７】本実施例において使用する樹脂成形金型の
上金型１１及び下金型１２には、それぞれキャビティ１
５及び１６内に対して進退自在に構成された可動ピン１
７及び１８が設けられている。これら可動ピン１７及び
１８はそれぞれ丸棒状をなし、図２に示すように、半導
体チップ４の各コーナー部の外方におけるフィルム基材
２の位置に対応して４本ずつ設けられている。The cavity 1 is formed in each of the upper mold 11 and the lower mold 12 of the resin molding mold used in this embodiment.
Movable pin 1 configured to move back and forth within 5 and 16
7 and 18 are provided. Each of the movable pins 17 and 18 has a round bar shape, and as shown in FIG. 2, four movable pins 17 and 18 are provided corresponding to the positions of the film base material 2 outside the corners of the semiconductor chip 4.
【００１８】本実施例の製造方法においては、まず、図
１（ａ）に示すように、半導体チップ４を搭載したフィ
ルムキャリヤ１を上金型１１と下金型１２とによって挟
持し、可動ピン１７及び１８をキャビティ１５及び１６
内に進入させて、その先端をフィルムキャリヤ１に当接
させる。これにより、半導体チップ４をキャビティ１５
及び１６内のほぼ中央の定位置に保持する。In the manufacturing method of this embodiment, first, as shown in FIG. 1A, a film carrier 1 having a semiconductor chip 4 mounted thereon is sandwiched between an upper mold 11 and a lower mold 12 to form a movable pin. 17 and 18 into cavities 15 and 16
The film carrier 1 is advanced into the inside and the tip thereof is brought into contact with the film carrier 1. As a result, the semiconductor chip 4 is placed in the cavity 15
And held in place approximately centrally within 16.
【００１９】この状態で、加熱溶融した樹脂２０を加圧
してゲート１３及び１４からキャビティ１５及び１６内
に注入する。In this state, the heat-melted resin 20 is pressurized and injected from the gates 13 and 14 into the cavities 15 and 16.
【００２０】そして、図１（ｂ）に示すように、キャビ
ティ１５及び１６内における樹脂２０の注入状態に応じ
て可動ピン１７及び１８を次第に後退させていく。可動
ピン１７及び１８をフィルムキャリヤ１から離間させる
タイミングは、キャビティ１５及び１６の容積、樹脂２
０の性質や注入圧力等に基づいて設定するが、一例とし
ては、樹脂２０がキャビティ１５及び１６内のほぼ中央
まで流動したときがよい。また、４本の可動ピン１７及
び１８の後退は、ゲート１３及び１４に近いものから順
次、即ち図２において一点鎖線で示す樹脂２０の流動に
沿って順次行うとよい。Then, as shown in FIG. 1B, the movable pins 17 and 18 are gradually retracted according to the injection state of the resin 20 in the cavities 15 and 16. The timing of separating the movable pins 17 and 18 from the film carrier 1 depends on the volumes of the cavities 15 and 16 and the resin 2.
Although it is set based on the property of 0, injection pressure, etc., as an example, it is preferable that the resin 20 has flowed to almost the center of the cavities 15 and 16. Further, the four movable pins 17 and 18 may be retracted sequentially from the ones closer to the gates 13 and 14, that is, along the flow of the resin 20 shown by the one-dot chain line in FIG.
【００２１】そして、図１（ｃ）に示すように、樹脂２
０がキャビティ１５及び１６内に完全に充填された状態
では、可動ピン１７及び１８をキャビティ１５及び１６
内から完全に後退させ、可動ピン１７及び１８の先端を
キャビティ１５及び１６の底面と一致させる。Then, as shown in FIG. 1 (c), the resin 2
0 is completely filled in the cavities 15 and 16, the movable pins 17 and 18 are moved to the cavities 15 and 16
It is completely retracted from the inside so that the tips of the movable pins 17 and 18 are aligned with the bottom surfaces of the cavities 15 and 16.
【００２２】このように、樹脂注入時に可動ピン１７及
び１８によってフィルムキャリヤ１即ち半導体チップ４
を定位置に保持するので、キャビティ１５及び１６内に
おいて樹脂２０の流動バランスが変動しても、半導体チ
ップ４が上下に変動することを未然に防止することがで
きる。そして、可動ピン１７及び１８を樹脂２０の注入
状態に応じて次第に後退させ、注入完了時には、可動ピ
ン１７及び１８の先端をキャビティ１５及び１６の底面
と一致させているので、従来と全く同様な外観の樹脂モ
ールドを成形することができる。ところで、可動ピン１
７及び１８は、フィルムキャリヤ１の保持用であるが、
離型の際のエジェクトピンとしても利用することができ
る。Thus, when the resin is injected, the movable pins 17 and 18 are used to move the film carrier 1, that is, the semiconductor chip 4.
Is held at a fixed position, it is possible to prevent the semiconductor chip 4 from vertically moving even if the flow balance of the resin 20 in the cavities 15 and 16 changes. Then, the movable pins 17 and 18 are gradually retracted according to the injection state of the resin 20, and when the injection is completed, the tips of the movable pins 17 and 18 are aligned with the bottom surfaces of the cavities 15 and 16, so that it is exactly the same as the conventional one. An external resin mold can be formed. By the way, movable pin 1
7 and 18 are for holding the film carrier 1,
It can also be used as an eject pin during release.
【００２３】次に、図３は第２実施例を示すものであ
り、可動ピン１７及び１８をキャビティ１５及び１６内
に進入させて、その先端を半導体チップ４に当接させる
ことによって、半導体チップ４をキャビティ１５及び１
６内の定位置に保持するものである。そして前述と同様
に、樹脂２０の注入状態に応じて可動ピン１７及び１８
を次第に後退させていく。Next, FIG. 3 shows a second embodiment, in which the movable pins 17 and 18 are inserted into the cavities 15 and 16 and the tips thereof are brought into contact with the semiconductor chip 4, thereby the semiconductor chip 4 for cavities 15 and 1
It is held at a fixed position within 6. Then, in the same manner as described above, the movable pins 17 and 18 are moved according to the injection state of the resin 20.
Gradually recede.
【００２４】次に、図４は第３実施例を示すものであ
り、上金型１１に設けた可動ピン１９を、フィルムキャ
リヤ１または半導体チップ４の保持用ではなく、樹脂２
０の流動制御のために用いたものである。可動ピン１９
は注入ゲート１３の先端近傍に配置され、この可動ピン
１９をキャビティ１５内に進入させる。これによって、
キャビティ１５の容積をキャビティ１６の容積と同等に
して、キャビティ１５及び１６内における樹脂２０の流
動バランスをとる。そして前述と同様に、樹脂２０の注
入状態に応じて可動ピン１９を次第に後退させていく。Next, FIG. 4 shows a third embodiment, in which the movable pin 19 provided on the upper mold 11 is not used for holding the film carrier 1 or the semiconductor chip 4 but the resin 2
It was used for zero flow control. Movable pin 19
Is arranged in the vicinity of the tip of the injection gate 13, and causes the movable pin 19 to enter the cavity 15. by this,
The volume of the cavity 15 is made equal to that of the cavity 16 to balance the flow of the resin 20 in the cavities 15 and 16. Then, similarly to the above, the movable pin 19 is gradually retracted according to the injection state of the resin 20.
【００２５】なお、上記各実施例ではフィルムキャリヤ
１に半導体チップ４を搭載したものについて述べたが、
導電性金属材料によって形成されたリードフレームを用
い、このリードフレームに半導体チップを搭載したもの
についても、同様に適用することができる。In each of the above embodiments, the film carrier 1 on which the semiconductor chip 4 is mounted has been described.
The same applies to the case where a lead frame formed of a conductive metal material is used and a semiconductor chip is mounted on this lead frame.
【００２６】以上、本発明の実施例に付き説明したが、
本発明は上記実施例に限定されることなく、本発明の技
術的思想に基づいて各種の有効な変更並びに応用が可能
である。例えば、可動ピンは、キャビティの容積や樹脂
の性質等に応じた本数でよく、また半導体チップが変動
し易い方向に応じて上金型及び下金型の両方または何れ
か一方だけに設けてもよい。なお、実施例では可動ピン
を丸棒状としたが、角棒状や楕円棒状等でもよい。The embodiments of the present invention have been described above.
The present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention. For example, the number of movable pins may be the number according to the volume of the cavity, the properties of the resin, or the like, and may be provided on either or both of the upper mold and the lower mold depending on the direction in which the semiconductor chip is likely to change. Good. Although the movable pin has a round bar shape in the embodiment, it may have a square bar shape or an elliptical bar shape.
【００２７】[0027]
【発明の効果】以上説明したように、本発明によれば、
キャビティ内に進入させた可動ピンによりリード構造体
または半導体チップを定位置に保持することによって、
また、キャビティ内に進入させた可動ピンにより樹脂の
流動を制御することによって、キャビティ内における樹
脂の流動バランスの変動に影響されることなく、半導体
チップの上下変動を未然に防止することができる。従っ
て、リード構造体または半導体チップの表面露出やリー
ドの変形等がない、極めて安定した樹脂モールドを成形
することができる。そして、樹脂の注入状態に応じて可
動ピンを後退させることによって、従来と全く同様な外
観の樹脂モールドを成形することができる。また、本発
明によれば、保持用の可動ピンによるリード構造体また
は半導体チップの保持高さ位置、流動制御用の可動ピン
の進入量等を、金型を変更することなく任意に設定する
ことができるので、形状や大きさが異なる各種のリード
構造体及び半導体チップに対する汎用性が非常に高い。As described above, according to the present invention,
By holding the lead structure or semiconductor chip in place by the movable pin that has entered the cavity,
Further, by controlling the flow of the resin by the movable pin that has entered the cavity, it is possible to prevent the semiconductor chip from vertically moving without being affected by the fluctuation of the resin flow balance in the cavity. Therefore, it is possible to mold an extremely stable resin mold without exposing the surface of the lead structure or the semiconductor chip or deforming the leads. Then, by retracting the movable pin according to the resin injection state, it is possible to mold a resin mold having an appearance that is completely the same as the conventional one. Further, according to the present invention, the holding height position of the lead structure or the semiconductor chip by the movable holding pin, the entering amount of the movable pin for flow control, etc. can be arbitrarily set without changing the mold. Therefore, it is extremely versatile for various lead structures and semiconductor chips having different shapes and sizes.
【図１】本発明の第１実施例による半導体装置の製造工
程を順に示す断面図である。FIG. 1 is a sectional view sequentially showing a manufacturing process of a semiconductor device according to a first embodiment of the present invention.
【図２】本発明の実施例において使用したフィルムキャ
リヤの平面図である。FIG. 2 is a plan view of a film carrier used in an embodiment of the present invention.
【図３】本発明の第２実施例による半導体装置の製造工
程の断面図である。FIG. 3 is a sectional view of a manufacturing process of a semiconductor device according to a second embodiment of the present invention.
【図４】本発明の第３実施例による半導体装置の製造工
程の断面図である。FIG. 4 is a cross-sectional view of the manufacturing process of the semiconductor device according to the third embodiment of the present invention.
【図５】従来の半導体装置の製造工程を順に示す断面図
である。5A to 5C are cross-sectional views sequentially showing manufacturing steps of a conventional semiconductor device.
１ フィルムキャリヤ ２ フィルム基材 ３ リード ４ 半導体チップ １１ 上金型 １２ 下金型 １３、１４ ゲート １５、１６ キャビティ １７、１８、１９ 可動ピン ２０ 樹脂 1 Film Carrier 2 Film Base Material 3 Lead 4 Semiconductor Chip 11 Upper Mold 12 Lower Mold 13, 14 Gate 15, 16 Cavity 17, 18, 19 Movable Pin 20 Resin
Claims (4)
上金型及び下金型によって挟持し、前記上金型及び下金
型のキャビティ内に樹脂を注入して前記半導体チップを
樹脂封止するようにした半導体装置の製造方法におい
て、 前記上金型及び下金型の少なくとも一方に進退自在に設
けた可動ピンを前記キャビティ内に進入させてその可動
ピンの先端を前記リード構造体または前記半導体チップ
に当接させ、前記キャビティ内における前記樹脂の注入
状態に応じて前記可動ピンを後退させつつ前記半導体チ
ップを樹脂封止することを特徴とする半導体装置の製造
方法。1. A lead structure on which a semiconductor chip is mounted is sandwiched between an upper mold and a lower mold, and a resin is injected into a cavity of the upper mold and the lower mold to seal the semiconductor chip with a resin. In the method of manufacturing a semiconductor device as described above, a movable pin provided to be movable back and forth in at least one of the upper mold and the lower mold is advanced into the cavity, and the tip of the movable pin is connected to the lead structure or the semiconductor. A method of manufacturing a semiconductor device, which comprises contacting a chip, and encapsulating the semiconductor chip with a resin while retracting the movable pin according to an injection state of the resin in the cavity.
上金型及び下金型によって挟持し、前記上金型及び下金
型のキャビティ内に樹脂を注入して前記半導体チップを
樹脂封止するようにした半導体装置の製造方法におい
て、 前記上金型及び下金型の少なくとも一方に進退自在に設
けた可動ピンを前記キャビティ内に進入させ、前記キャ
ビティ内における前記樹脂の注入状態に応じて前記可動
ピンを後退させつつ前記半導体チップを樹脂封止するこ
とを特徴とする半導体装置の製造方法。2. A lead structure on which a semiconductor chip is mounted is sandwiched between an upper mold and a lower mold, and a resin is injected into a cavity of the upper mold and the lower mold to seal the semiconductor chip with a resin. In the method for manufacturing a semiconductor device as described above, a movable pin provided to be movable back and forth in at least one of the upper mold and the lower mold is advanced into the cavity, and the resin is injected in the cavity according to an injection state of the resin. A method of manufacturing a semiconductor device, characterized in that the semiconductor chip is resin-sealed while retracting the movable pin.
ム基材上に導電性のリードを形成してなるフィルムキャ
リヤを用いることを特徴とする請求項１または２記載の
半導体装置の製造方法。3. The method of manufacturing a semiconductor device according to claim 1, wherein a film carrier in which conductive leads are formed on an insulating film substrate is used as the lead structure.
って形成されたリードフレームを用いることを特徴とす
る請求項１または２記載の半導体装置の製造方法。4. The method of manufacturing a semiconductor device according to claim 1, wherein a lead frame made of a conductive material is used as the lead structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21217492A JPH0637130A (en) | 1992-07-16 | 1992-07-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21217492A JPH0637130A (en) | 1992-07-16 | 1992-07-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0637130A true JPH0637130A (en) | 1994-02-10 |
Family
ID=16618136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21217492A Withdrawn JPH0637130A (en) | 1992-07-16 | 1992-07-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0637130A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5685884A (en) * | 1995-10-13 | 1997-11-11 | Bently Nevada Corporation | Method of making a transducer |
| US5712562A (en) * | 1995-10-13 | 1998-01-27 | Bently Nevada Corporation | Encapsulated transducer with an alignment plug and method of manufacture |
| US5770941A (en) * | 1995-10-13 | 1998-06-23 | Bently Nevada Corporation | Encapsulated transducer and method of manufacture |
| US5818224A (en) * | 1995-10-13 | 1998-10-06 | Bently Nevada Corporation | Encapsulated transducer with an integrally formed full length sleeve and a component alignment preform and method of manufacture |
| US6643909B2 (en) | 2001-04-10 | 2003-11-11 | Bently Nevada Llc | Method of making a proximity probe |
| WO2006114903A1 (en) * | 2005-04-22 | 2006-11-02 | Mitsubishi Denki Kabushiki Kaisha | Process for producing molded object with embedded member |
| JP2009090573A (en) * | 2007-10-10 | 2009-04-30 | Panasonic Electric Works Co Ltd | Method for manufacturing rotor section of motor-integrated pump and motor-integrated pump equipped with the rotor section |
| JP2009129822A (en) * | 2007-11-27 | 2009-06-11 | Stanley Electric Co Ltd | Method of manufacturing lens cover |
| EP2228354B1 (en) | 2007-10-29 | 2014-09-10 | Kyocera Corporation | Process for producing conductor built-in ceramic |
-
1992
- 1992-07-16 JP JP21217492A patent/JPH0637130A/en not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5685884A (en) * | 1995-10-13 | 1997-11-11 | Bently Nevada Corporation | Method of making a transducer |
| US5712562A (en) * | 1995-10-13 | 1998-01-27 | Bently Nevada Corporation | Encapsulated transducer with an alignment plug and method of manufacture |
| US5770941A (en) * | 1995-10-13 | 1998-06-23 | Bently Nevada Corporation | Encapsulated transducer and method of manufacture |
| US5818224A (en) * | 1995-10-13 | 1998-10-06 | Bently Nevada Corporation | Encapsulated transducer with an integrally formed full length sleeve and a component alignment preform and method of manufacture |
| US6072312A (en) * | 1995-10-13 | 2000-06-06 | Bently Nevada Corporation | Encapsulated transducer having a protective sleeve |
| US6131267A (en) * | 1995-10-13 | 2000-10-17 | Bently Nevada Corporation | Method of manufacture of an encapsulated transducer |
| US6131270A (en) * | 1995-10-13 | 2000-10-17 | Bently Nevada Corporation | Method of manufacturing an encapsulated transducer with an integrally formed full length sleeve and a component alignment preform |
| US6170148B1 (en) | 1995-10-13 | 2001-01-09 | Bently Nevada Corporation | Method of making an encapsulated transducer with an alignment plug |
| US6643909B2 (en) | 2001-04-10 | 2003-11-11 | Bently Nevada Llc | Method of making a proximity probe |
| WO2006114903A1 (en) * | 2005-04-22 | 2006-11-02 | Mitsubishi Denki Kabushiki Kaisha | Process for producing molded object with embedded member |
| US8038921B2 (en) | 2005-04-22 | 2011-10-18 | Mitsubishi Electric Corporation | Process for producing molded object with embedded member |
| JP2009090573A (en) * | 2007-10-10 | 2009-04-30 | Panasonic Electric Works Co Ltd | Method for manufacturing rotor section of motor-integrated pump and motor-integrated pump equipped with the rotor section |
| KR100986474B1 (en) * | 2007-10-10 | 2010-10-08 | 파나소닉 전공 주식회사 | Method for manufacturing rotor unit of motor-integrated pump and motor integrated pump including the rotor unit |
| JP4605202B2 (en) * | 2007-10-10 | 2011-01-05 | パナソニック電工株式会社 | Method for manufacturing rotor part of motor-integrated pump |
| EP2228354B1 (en) | 2007-10-29 | 2014-09-10 | Kyocera Corporation | Process for producing conductor built-in ceramic |
| JP2009129822A (en) * | 2007-11-27 | 2009-06-11 | Stanley Electric Co Ltd | Method of manufacturing lens cover |
| JP4553932B2 (en) * | 2007-11-27 | 2010-09-29 | スタンレー電気株式会社 | Lens cover manufacturing method |
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Legal Events
| Date | Code | Title | Description |
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| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19991005 |