JPH01206655A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01206655A JPH01206655A JP3321188A JP3321188A JPH01206655A JP H01206655 A JPH01206655 A JP H01206655A JP 3321188 A JP3321188 A JP 3321188A JP 3321188 A JP3321188 A JP 3321188A JP H01206655 A JPH01206655 A JP H01206655A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- brominated epoxy
- semiconductor device
- organic group
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000003822 epoxy resin Substances 0.000 claims abstract description 68
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 68
- 239000000203 mixture Substances 0.000 claims abstract description 22
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 16
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 16
- 239000005011 phenolic resin Substances 0.000 claims abstract description 11
- -1 hydrotalcite compound Chemical class 0.000 claims description 14
- 229960001545 hydrotalcite Drugs 0.000 claims description 10
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 10
- 125000000962 organic group Chemical group 0.000 claims 7
- 125000003277 amino group Chemical group 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229920003986 novolac Polymers 0.000 abstract description 11
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 229910052736 halogen Inorganic materials 0.000 abstract description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 abstract description 4
- 229930003836 cresol Natural products 0.000 abstract description 4
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 229920001568 phenolic resin Polymers 0.000 abstract description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 125000005375 organosiloxane group Chemical group 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical class [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 102100026810 Cyclin-dependent kinase 7 Human genes 0.000 description 1
- 101000911952 Homo sapiens Cyclin-dependent kinase 7 Proteins 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Sealing Material Composition (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は高温雰囲気中においても優れた信頼性を保持
する半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device that maintains excellent reliability even in a high temperature atmosphere.
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子は、一般に
エポキシ樹脂組成物を用いて封止され半導体装置化され
ている。上記エポキシ樹脂は、その電気特性、耐湿性、
接着性等が良好であることから、半導体装置の封止に用
いられており良好な成績を収めている。しかしながら、
近年、自動車等の、多くの屋外使用機器においても半導
体装置が大量に使用されるにしたがって、今まで以上の
耐熱性、特に従来では問題にならなかった高温での保存
信頼性が、多（の半導体装置に要求されるようになって
きた。Semiconductor elements such as transistors, ICs, and LSIs are generally sealed using epoxy resin compositions to form semiconductor devices. The above epoxy resin is characterized by its electrical properties, moisture resistance,
Because it has good adhesive properties, it is used for sealing semiconductor devices and has achieved good results. however,
In recent years, as semiconductor devices have been used in large quantities in many outdoor devices such as automobiles, they have become more heat resistant than ever before, especially storage reliability at high temperatures, which was not a problem in the past. It has come to be required for semiconductor devices.
〔発明が解決しようとする問題点〕 □このよう
な耐熱性の向上のためには、従来から、封止に用いるエ
ポキシ樹脂の難燃性を高めることによって行っている。[Problems to be Solved by the Invention] □In order to improve such heat resistance, conventionally, the flame retardance of the epoxy resin used for sealing has been increased.
すなわち、臭素化エポキシ樹脂と酸化アンチモンとを組
み合わせてエポキシ樹脂組成物中に配合することにより
、エポキシ樹脂組成物硬化体の難燃性を高め、それによ
って封止樹脂の耐熱性の向上を図っている。上記臭素化
エポキシ樹脂と酸化アンチモンとの組み合わせは、難燃
性の点では良好な結果を示す。ところが、゛高温におけ
る保存安定性の点では問題が生じる。That is, by blending a combination of brominated epoxy resin and antimony oxide into an epoxy resin composition, the flame retardance of the cured epoxy resin composition is increased, thereby improving the heat resistance of the sealing resin. There is. The combination of the above-mentioned brominated epoxy resin and antimony oxide shows good results in terms of flame retardancy. However, a problem arises in terms of storage stability at high temperatures.
すなわち、高温状態においては、臭素化エポキシ樹脂の
熱分解により臭化水素が発生し、この臭化水素が半導体
素子の金線とアルミパッドの接合部とに反応して合金の
生成を促し、これによって電−気抵抗値の増加を招き、
導通不良をもたらす。このように、従来の半導体装置で
は、難燃性の点においては問題はないが、高温状態にお
ける放置、特に長時間の放置では信頼性の点に問題があ
る。In other words, under high temperature conditions, hydrogen bromide is generated due to thermal decomposition of the brominated epoxy resin, and this hydrogen bromide reacts with the joint between the gold wire and aluminum pad of the semiconductor element, promoting the formation of an alloy. This causes an increase in electrical resistance,
This results in poor continuity. As described above, conventional semiconductor devices do not have any problems in terms of flame retardancy, but they do have problems in terms of reliability when left in high temperature conditions, especially when left unused for long periods of time.
この発明は、このような事情にｉろなされたもので、高
温雰囲気中に長時間放置しても優れた信頼性を保持する
半導体装置の提供をその目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that maintains excellent reliability even when left in a high temperature atmosphere for a long time.
〔問題点を解決するための手段］
上記の目的を達成するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｄ）成分を含有する臭素含有ＭＯ１５
〜５重量％のエポキシ樹脂組成物を用いて半導体素子を
封止するという構成をとる。[Means for solving the problems] In order to achieve the above object, the semiconductor device of the present invention has the following features:
Bromine-containing MO15 containing the following components (A) to (D)
The structure is such that the semiconductor element is encapsulated using ~5% by weight of the epoxy resin composition.
（Ａ）エポキシ樹脂。(A) Epoxy resin.
（Ｂ）フェノール樹脂。(B) Phenol resin.
（Ｃ）臭素含有量２０〜６０重量％の臭素化エポキシ樹
脂。(C) Brominated epoxy resin with a bromine content of 20 to 60% by weight.
（Ｄ）下記の一般式（１）で表されるハイドロタルサイ
ト類化合物。(D) A hydrotalcite compound represented by the following general formula (1).
すなわち、本発明者らは、上記の目的を達成するため、
一連の研究を重ねた結果、難燃剤としての臭素化エポキ
シ樹脂の熱分解の際に発生するハロゲンイオンガスを、
上記一般式（１）で表される特殊なハイドロタルサイト
類化合物が捕捉トラップし、高温雰囲気下の信頼性を効
果的に保持させることをつきとめた。そして、さらに研
究を重ねた結果、上記ハイドロタルサイト類化合物の捕
捉１−ラップ効果は、上記臭素化エポキシ樹脂として特
定の臭素含有量のものに対して有効であり、しかも、エ
ポキシ樹脂組成物全体における臭素含有量が、特定の範
囲内で特に有効であることを見出しこの発明に到達した
。That is, in order to achieve the above object, the present inventors
As a result of a series of research, we have discovered that the halogen ion gas generated during the thermal decomposition of brominated epoxy resin as a flame retardant,
It has been found that a special hydrotalcite compound represented by the above general formula (1) traps and effectively maintains reliability under a high-temperature atmosphere. As a result of further research, it was found that the trapping 1-wrap effect of the hydrotalcite compound is effective for the brominated epoxy resin with a specific bromine content, and that it is effective for the brominated epoxy resin with a specific bromine content. The present invention was achieved by discovering that the bromine content is particularly effective within a specific range.
この発明の半導体装置で使用するエポキシ樹脂組成物は
、エポキシ樹脂（Ａ）とフェノール樹脂（Ｂ）と臭素含
有量２０〜６０重量％の臭素化エポキシ樹脂（Ｃ）と前
記一般式（Ｉ）で表されるハイドロタルサイト類化合物
（Ｄ）とを用いて得られるものであり、通常、粉末状も
しくはそれを打錠したタブレット状になっている。The epoxy resin composition used in the semiconductor device of the present invention is composed of an epoxy resin (A), a phenol resin (B), a brominated epoxy resin (C) having a bromine content of 20 to 60% by weight, and the general formula (I). It is obtained using the following hydrotalcite compound (D), and is usually in the form of a powder or a tablet formed by compressing it.
上記エポキシ樹脂組成物のＡ成分となるエポキシ樹脂は
、特に制限するものではなく、フェノールノボラック型
エポキシ樹脂、タレゾールノボラック型エポキシ樹脂、
ビスフェノールＡ型エポキシ樹脂等、従来より用いられ
ている各種のエポキシ樹脂があげられる。これらのエポ
キシ樹脂は単独で用いてもよいし、併用してもよい。The epoxy resin serving as component A of the epoxy resin composition is not particularly limited, and includes phenol novolac type epoxy resin, talesol novolac type epoxy resin,
Examples include various epoxy resins that have been used conventionally, such as bisphenol A epoxy resin. These epoxy resins may be used alone or in combination.
上記エポキシ樹脂の中でも好適なエポキシ樹脂としては
、エポキシ当量１７０〜３００のノボラック型エポキシ
樹脂あり、例えばフェノールノボラック型エポキシ樹脂
、クレゾールノボラック型エポキシ樹脂等があげられる
。Among the above epoxy resins, suitable epoxy resins include novolac type epoxy resins having an epoxy equivalent of 170 to 300, such as phenol novolac type epoxy resins, cresol novolac type epoxy resins, and the like.
上記Ｂ成分のフェノール樹脂は、上記エポキシ樹脂の硬
化剤として作用するものであり、フェノールノボラック
樹脂、クレゾールノボラック樹脂等が好適に用いられる
。これらのフェノール樹脂は、軟化点が５０〜１１０°
Ｃ３水酸基当量が７０〜１５０であることが好ましい。The phenol resin of component B acts as a curing agent for the epoxy resin, and phenol novolak resin, cresol novolac resin, etc. are preferably used. These phenolic resins have a softening point of 50 to 110°
It is preferable that the C3 hydroxyl equivalent is 70 to 150.
上記のようなエポキシ樹脂およびフェノール樹脂は片方
または双方が、下記の一般式（ＩＩ）ＲＲＲ
で表されるオルガノシロキサンと反応しているものを用
いることが好ましい。このようなエポキシ樹脂あるいは
フェノール樹脂ないしは、双方の変性樹脂を用いること
によって、耐クラック性、耐ヒートサイクル性が向上す
る。この場合、上記オルガノシロキサンの使用量は、エ
ポキシ樹脂組成物中の有機成分総量（Ａ＋Ｂ＋Ｃ）に対
して、オルガノシロキサンが１〜５０重量％（以下「％
」と略す）になるよう設定することが好適であり、より
好適なのは５〜３０％である。すなわち、上記オルガノ
シロキサンの含有量が１％を下回ると、充分な低応力効
果がみられなくなり、逆に５０％を上回ると、樹脂強度
の低下現象がみられるからである。It is preferable to use one or both of the above-mentioned epoxy resins and phenol resins that are reacted with an organosiloxane represented by the following general formula (II) RRR. By using such epoxy resin, phenol resin, or both modified resins, crack resistance and heat cycle resistance are improved. In this case, the amount of the organosiloxane used is 1 to 50% by weight (hereinafter referred to as "%") based on the total amount of organic components (A+B+C) in the epoxy resin composition.
It is suitable to set it so that it becomes (abbreviated as ""), and more preferably it is 5 to 30%. That is, if the content of the organosiloxane is less than 1%, a sufficient stress-lowering effect will not be observed, whereas if it exceeds 50%, a decrease in resin strength will occur.
上記（Ｃ）成分の臭素化エポキシ樹脂は、特に制限する
ものではなく、クレゾールノボラック型臭素化エポキシ
樹脂、フェノールノボラック型臭素化エポキシ樹脂、ビ
スフェノール型臭素化エポキシ樹脂等が挙げられる。そ
して、このような臭素化エポキシ樹脂は 臭素含有量が
２０〜６０％、好適には３０〜５０％のものを使用する
ことが必要である。すなわち、このような臭素含有量の
臭素化エポキシ樹脂に対して、上記ハイドロタルザイ）
１化合物の捕捉トラップ効果が充分に発揮され、それに
よって半導体装置の高温雰囲気下における信頼性が得ら
れるようになるからである。特に、上記臭素含有量の臭
素化エポキシ樹脂のなかでも、エポキシ当量が４２０〜
５５０のビスフェノール型臭素化エポキシを使用するこ
とが好結果をもたらす。The brominated epoxy resin of the component (C) is not particularly limited, and examples thereof include cresol novolac type brominated epoxy resin, phenol novolak type brominated epoxy resin, bisphenol type brominated epoxy resin, and the like. It is necessary to use such a brominated epoxy resin having a bromine content of 20 to 60%, preferably 30 to 50%. That is, for a brominated epoxy resin with such a bromine content, the above hydrotalzai)
This is because the capture and trapping effect of one compound is fully exhibited, and thereby reliability of the semiconductor device in a high-temperature atmosphere can be obtained. In particular, among the brominated epoxy resins with the above bromine content, the epoxy equivalent is 420 to 420.
The use of 550 bisphenol type brominated epoxy gives good results.
上記エポキシ樹脂（臭素化エポキシ樹脂を含む）とフェ
ノール樹脂との相互の使用割合は、エポキシ樹脂のエポ
キシ当量と、フェノール樹脂の水酸基当量との関係から
適宜に選択されるが、エポキシ基に対するフェノール性
水酸基の当量比が、０．５〜１．５の範囲内になるよう
設定することが好ましい。The ratio of the above-mentioned epoxy resin (including brominated epoxy resin) and phenol resin is selected appropriately based on the relationship between the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin. It is preferable that the equivalent ratio of hydroxyl groups is set within the range of 0.5 to 1.5.
当量比が上記範囲を外れると、エポキシ樹脂組成物の硬
化性が劣る傾向がみられるようになる。When the equivalent ratio is out of the above range, the curability of the epoxy resin composition tends to be poor.
上記（Ｄ）成分のハイドロタルサイト類化合物は、前記
一般式（Ｉ［）で表される特殊なハイドロタルサイト類
化合物である。この化合物は、エポキシ樹脂組成物中の
ハロゲンイオンおよび有機酸イオンを自己の００３−イ
オンと置換するか配位結合することによって捕捉し、臭
素化エポキシ樹脂の熱分解に起因する臭化水素の発生を
防止する作用を奏するものと考えられる。上記ハイドロ
タルサイト化合物の種類は、前記一般式（１）における
ｘ、ｙ、ｚの数の比による区別等によって多くの種類に
分けられる。このようなハイドロタルサイト類化合物は
、単独でも、シ＜は二種以上を混合して使用することが
可能である。The hydrotalcite compound as the component (D) is a special hydrotalcite compound represented by the general formula (I[). This compound captures the halogen ions and organic acid ions in the epoxy resin composition by replacing or coordinating with its own 003-ion, and generates hydrogen bromide due to thermal decomposition of the brominated epoxy resin. It is thought that it has the effect of preventing this. The above hydrotalcite compounds can be divided into many types depending on the ratio of the numbers of x, y, and z in the general formula (1). Such hydrotalcite compounds can be used alone or in combination of two or more.
このハイドロタルサイト類化合物は、エポキシ樹脂組成
物中における分散性の観点から平均粒径が０．５〜３０
μｍ、最大粒径が７４μｍ以下であることが好適である
。そして、このようなり成分の含有量は、エポキシ樹脂
組成物の樹脂成分（ＡｆＢ十Ｃ）に対して０．１〜５％
になるように設定することが好ましい。すなわち、配合
量が０．１％を下回ると高温放置特性の改善効果が充分
現れず逆に５％を上回ると耐湿性の低下現象がみられる
ようになるからである。This hydrotalcite compound has an average particle size of 0.5 to 30% from the viewpoint of dispersibility in the epoxy resin composition.
It is preferable that the maximum particle size is 74 μm or less. The content of such a component is 0.1 to 5% based on the resin component (AfB+C) of the epoxy resin composition.
It is preferable to set it so that That is, if the blending amount is less than 0.1%, the effect of improving the high-temperature storage properties will not be sufficiently exhibited, but if it exceeds 5%, a phenomenon of deterioration of moisture resistance will be observed.
この発明に用いられるエポキシ樹脂組成物には、上記Ａ
−Ｄ成分以外にも、必要に応じて従来より用いられてい
るその他の添加剤が含有される。The epoxy resin composition used in this invention includes the above A
In addition to component -D, other conventionally used additives may be included as necessary.
上記その他の添加剤としては、例えば硬化促進剤、離型
剤９着色剤、シランカップリング剤等があげられる。Examples of the other additives include a curing accelerator, a mold release agent, a coloring agent, and a silane coupling agent.
上記硬化促進剤としては、三級アミン、四級アンモニウ
ム塩、イミダゾール類、有機リン系化合物およびホウ素
化合物等があげられる。これらの化合物は単独でもしく
は併せて使用される。Examples of the curing accelerator include tertiary amines, quaternary ammonium salts, imidazoles, organic phosphorus compounds, and boron compounds. These compounds may be used alone or in combination.
上記離型剤としては、従来公知のステアリン酸、パルミ
チン酸等の長鎖のカルボン酸、ステアリン酸亜鉛１ステ
アリン酸カルシウｌ、等の長鎖カルボン酸の金属塩、カ
ルナバワックス、モンタンワックス等のワックス類を用
いることができる。Examples of the above-mentioned mold release agent include conventionally known long-chain carboxylic acids such as stearic acid and palmitic acid, metal salts of long-chain carboxylic acids such as zinc stearate and calcium stearate, and waxes such as carnauba wax and montan wax. can be used.
なお、上記の原料からなるエポ＝１＝シ樹脂組成物は、
臭素含有量が０．５〜５％である必要がある。In addition, the Epo=1=Si resin composition consisting of the above raw materials is as follows:
The bromine content should be between 0.5 and 5%.
すなわち、臭素含有量が上記の範囲内にあるものに対し
て、ハイドロタルサイト類化合物のハロゲンイオン捕捉
効果が効果的に作用するからである。That is, the halogen ion-trapping effect of the hydrotalcite compound acts effectively on those whose bromine content is within the above range.
この発明に用いるエポキシ樹脂組成物は、例えばつぎの
ようにして製造することができる。すなわち、上記Ａ−
Ｄ成分原料ならびに上記その他の添加剤を適宜配合し、
この混合物をミキシングロール機等の混練機に掛は加熱
状態で溶融混合し、これを室温に冷却したのち公知の手
段により粉砕し、必要に応じて打錠するという一連の工
程により、目的とするエポキシ樹脂組成物を得ることが
できる。The epoxy resin composition used in this invention can be produced, for example, as follows. That is, the above A-
Component D raw materials and the other additives mentioned above are appropriately blended,
This mixture is melt-mixed in a heated state by passing through a kneading machine such as a mixing roll machine, cooled to room temperature, pulverized by known means, and, if necessary, tableted. An epoxy resin composition can be obtained.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は、特に制限するものではなく、通常のトランスフ
ァー成形等の公知のモールド方法により行うことができ
る。The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.
このようにして得られる半導体装置は、高温放置時の信
頼性を充分に保持している。The semiconductor device thus obtained maintains sufficient reliability when left at high temperatures.
以上のように、この発明の半導体装置は、特定の臭素化
エポキシ樹脂（Ｃ成分）と、特殊なハイドロタルサイト
類化合物（Ｄ成分）とを含む特定臭素含有量のエポキシ
樹脂組成物を用いて封止されており、その封止樹脂中の
Ｄ成分が、高温雰囲気中における長時間放置において発
生するハロゲンイオンを捕捉するため、高温放置時にお
いて優れた信頼性を有している。As described above, the semiconductor device of the present invention uses an epoxy resin composition with a specific bromine content containing a specific brominated epoxy resin (component C) and a specific hydrotalcite compound (component D). The D component in the sealing resin captures halogen ions generated when left in a high temperature atmosphere for a long time, so it has excellent reliability when left in a high temperature atmosphere.
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
〔実施例１〜８、比較例１〜２〕
後記の第１表に示すような原料を準備し、上記原料を同
表に示す割合で配合し、ミキシングロール機で混練して
冷却後粉砕し目的とする粉末状のエポキシ樹脂組成物を
得た。[Examples 1 to 8, Comparative Examples 1 to 2] Raw materials as shown in Table 1 below were prepared, the above raw materials were blended in the proportions shown in the table, kneaded with a mixing roll machine, cooled, and then ground. The desired powdered epoxy resin composition was obtained.
（以下余白）
つぎに上記のようにして得られた粉末状エポキシ樹脂組
成物の硬化物特性を調べ後記の第２表に示した。(The following is a blank space.) Next, the properties of the cured product of the powdered epoxy resin composition obtained as described above were investigated and are shown in Table 2 below.
（以下余白）
なお、上記第２表において、線膨張係数はＴＭＡ（理学
電機社製）にて測定した。曲げ弾性率はテンシロン万能
試験ａ（東洋ボールドウィン社製）３測定した。体積抵
抗率はＪ Ｉ Ｓ−に−６９１１に準拠して測定した。(The following is a blank space) In Table 2 above, the linear expansion coefficient was measured using TMA (manufactured by Rigaku Denki Co., Ltd.). The bending elastic modulus was measured using Tensilon Universal Test A (manufactured by Toyo Baldwin Co., Ltd.) 3. The volume resistivity was measured in accordance with JIS-6911.
また、高温状態における素子不良の測定は、半導体素子
を樹脂封止して半導体装置を組み立て、全量２０個を高
温にざらし、導通不良になる個数を求めて評価した。Ｔ
ＣＴ試験は、半導体素子を樹脂封止して、半導体装置を
組み立て、−５０°Ｃ１５分〜１５０°Ｃ１５分の２０
００回の温度サイクルテストを行い、またＰＣＴ試験は
、上記半導体装置をプレッシャークツカー状態（１２１
°（：Ｘ２ａｊｍＸ１００％ＲＨ）に放置し、アルミ腐
食の発生数を測定した。Furthermore, element failure in high temperature conditions was evaluated by assembling a semiconductor device by sealing semiconductor elements with resin, exposing a total of 20 pieces to high temperature, and determining the number of pieces that showed conduction failure. T
The CT test involves sealing the semiconductor element with resin, assembling the semiconductor device, and heating it at -50°C for 15 minutes to 150°C for 20 minutes.
A temperature cycle test of 00 times was performed, and a PCT test was conducted in which the semiconductor device was placed in a pressure stressor state (121
° (:X2ajmX100%RH), and the number of occurrences of aluminum corrosion was measured.
第３表の結果から、実施例品は比較例品に比べ高温状態
に放置したときの素子の信頼性が高いことがわかる。From the results in Table 3, it can be seen that the device reliability of the example products when left in a high temperature state is higher than that of the comparative example products.
特許出願人 日東電気工業株式会社 代理人 弁理士 西 藤 征 彦Patent applicant: Nitto Electric Industry Co., Ltd. Agent: Patent attorney Yukihiko Nishifuji
Claims (2)
０．５〜５重量％のエポキシ樹脂組成物を用いて半導体
素子を封止してなる半導体装置。 （Ａ）エポキシ樹脂。 （Ｂ）フェノール樹脂。 （Ｃ）臭素含有量２０〜６０重量％の臭素化エポキシ樹
脂。 （Ｄ）下記の一般式（Ｉ）で表されるハイドロタルサイ
ト類化合物。 ＭｇｘＡｌｙ（ＯＨ）＿２ｘ＿＋＿３ｙ＿−＿２ｚ（Ｃ
Ｏ＿３）＿２・＿ｍＨ＿２Ｏ…（ I ）式（ I ）中、ｘ
、ｙおよびｚは、それぞれ ０＜ｙ／ｘ≦１、０≦ｚ／ｙ＜１．５なる関係を有し、
ｍは整数を表す。(1) A semiconductor device in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (D) and having a bromine content of 0.5 to 5% by weight. (A) Epoxy resin. (B) Phenol resin. (C) Brominated epoxy resin with a bromine content of 20 to 60% by weight. (D) A hydrotalcite compound represented by the following general formula (I). MgxAly(OH)_2x_+_3y_-_2z(C
O_3)_2・__mH_2O...(I) In formula (I), x
, y and z have the relationships of 0<y/x≦1 and 0≦z/y<1.5, respectively,
m represents an integer.
一方が、下記の一般式（II） （余白） ▲数式、化学式、表等があります▼…（II） 式（II）中、Ｒは１価の有機基であり、相 互に同じであっても異なつていてもよい。ただし、１分
子中において、上記Ｒのうちの少なくとも２個はアミノ
基置換有機基、エポキシ基置換有機基、水酸基置換有機
基、ビニル基置換有機基、メルカプト基置換有機基およ
びカルボキシル基置換有機基からなる群から選択された
基である。ｍは０〜５００の整数である。 で表されるオルガノポリシロキサンと反応してるもので
ある請求項１記載の半導体装置。(2) At least one of the epoxy resin and the phenol resin has the following general formula (II) (margin) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(II) In formula (II), R is a monovalent organic group and may be the same or different. However, in one molecule, at least two of the above R are an amino-substituted organic group, an epoxy-substituted organic group, a hydroxyl-substituted organic group, a vinyl-substituted organic group, a mercapto-substituted organic group, and a carboxyl-substituted organic group. A group selected from the group consisting of m is an integer from 0 to 500. 2. The semiconductor device according to claim 1, wherein the semiconductor device is reacted with an organopolysiloxane represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63033211A JP2635350B2 (en) | 1988-02-15 | 1988-02-15 | Semiconductor device and epoxy resin composition used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63033211A JP2635350B2 (en) | 1988-02-15 | 1988-02-15 | Semiconductor device and epoxy resin composition used therefor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24193396A Division JP2872973B2 (en) | 1996-09-12 | 1996-09-12 | Semiconductor device and epoxy resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01206655A true JPH01206655A (en) | 1989-08-18 |
| JP2635350B2 JP2635350B2 (en) | 1997-07-30 |
Family
ID=12380115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63033211A Expired - Lifetime JP2635350B2 (en) | 1988-02-15 | 1988-02-15 | Semiconductor device and epoxy resin composition used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2635350B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006182802A (en) * | 2004-12-24 | 2006-07-13 | Sumitomo Bakelite Co Ltd | Mold release restoring resin composition and method for producing semiconductor device |
| JP2007009166A (en) * | 2005-06-03 | 2007-01-18 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing, and electronic component apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57212225A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS60147141A (en) * | 1984-01-11 | 1985-08-03 | Hitachi Ltd | Resin sealed type semiconductor device |
| JPS60202118A (en) * | 1984-03-26 | 1985-10-12 | Toshiba Corp | Sealing epoxy resin composition and semiconductor device sealed therewith |
| JPS6119625A (en) * | 1984-07-05 | 1986-01-28 | Toshiba Corp | Epoxy resin composition for sealing semiconductor |
| JPS62136860A (en) * | 1985-12-10 | 1987-06-19 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS62254453A (en) * | 1986-04-25 | 1987-11-06 | Nitto Electric Ind Co Ltd | Semiconductor device |
-
1988
- 1988-02-15 JP JP63033211A patent/JP2635350B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57212225A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS60147141A (en) * | 1984-01-11 | 1985-08-03 | Hitachi Ltd | Resin sealed type semiconductor device |
| JPS60202118A (en) * | 1984-03-26 | 1985-10-12 | Toshiba Corp | Sealing epoxy resin composition and semiconductor device sealed therewith |
| JPS6119625A (en) * | 1984-07-05 | 1986-01-28 | Toshiba Corp | Epoxy resin composition for sealing semiconductor |
| JPS62136860A (en) * | 1985-12-10 | 1987-06-19 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS62254453A (en) * | 1986-04-25 | 1987-11-06 | Nitto Electric Ind Co Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006182802A (en) * | 2004-12-24 | 2006-07-13 | Sumitomo Bakelite Co Ltd | Mold release restoring resin composition and method for producing semiconductor device |
| JP2007009166A (en) * | 2005-06-03 | 2007-01-18 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing, and electronic component apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2635350B2 (en) | 1997-07-30 |
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