JPH01201964A - Semiconductor device - Google Patents

Abstract

PURPOSE:To deposit polysilicon and to measure both transistor and electric characteristics on a stage of polysilicon pattern formation, by making a contact hole on a source.drain layer in the structure of a MOS-type LSI having a selective diffusion layer. CONSTITUTION:On a semiconductor substrate 1, an oxide film and an Si3N4 film are deposited to form a selective diffusion area pattern. After formation of a field oxide film 3, the oxide film and the Si3N4 film are removed to deposit a gate oxide film 4 and polysilicon 6. At this time, a contact hole is made on the gate oxide film 4 between the selective oxide area and the polysilicon layer 6. Then, a polysilicon pattern and a source.drain layer 2 are formed. By making a contact hole, the polysilicon layer 6 and the source.drain layer 2 are electrically connected and the polysilicon 6 makes an electrode terminal. The gate-source-drain-substrate current can be measured by applying voltage to this electrode terminal.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor device, specifically a semiconductor device having a selective diffusion layer.
This paper relates to the structure of an O8 type large-scale integrated circuit.

Conventional technology The structure of a conventional MOS will be explained below.

FIG. 3 is a cross-sectional view of a conventional MO3 structure. In the figure, 1 is a semiconductor substrate, 2 is a selective diffusion region, 3 is a field oxide film, 4 is a gate oxide film, 5 is an interlayer insulating film, 6 is a polysilicon gate, and 7 is an aluminum wiring. In the MO8 type large-scale integrated circuit, first, a thin oxide film and a Si3N4 film are grown in layers on a semiconductor substrate 1, and a selective diffusion region pattern is formed in these layers. Next, field oxide film 3
After forming the oxide film and the Si3N4 film, a gate oxide film 4 and a gate polysilicon film are grown. Here, a polysilicon pattern is formed, a source train 2 is formed, and after an interlayer insulating oxide film 5 is grown, a contact window is formed. Next, aluminum evaporation and electrode 7
Form a pattern. Finally, a protective film is formed,
Finally, bonding pads are formed.

According to this conventional MO3 structure, in order to control the manufacturing process and measure transistor characteristics during the manufacturing process, all of the gate, source, drain, and substrate are
Electrode terminals are required to apply voltage. However, according to the above structure, the lead-out of each electrode terminal is formed at the time of aluminum wiring. Therefore, transistor characteristics must be measured after the aluminum wiring pattern is formed.

Problems to be Solved by the Invention According to the conventional MOS transistor structure, semiconductor substrate - oxide film growth - Si3N4 growth - field oxidation - gate oxide film growth - polysilicon growth - source train formation - 3i02 growth - contact window formation - Since transistor characteristics must be measured after going through many steps of forming an aluminum wiring pattern, it takes time to measure.

In addition, there is a problem that the process is long and the cost is high.

The present invention solves the above problems by forming a structure in which transistor characteristics and other electrical characteristics can be measured at an earlier process stage, that is, at the stage where polysilicon is grown and a polysilicon pattern is formed. The purpose is to

Means for Solving the Problems In order to achieve this object, the semiconductor device of the present invention includes a source/drain diffusion layer and a polysilicon layer formed on the diffusion layer with an oxide film sandwiched therebetween on a semiconductor substrate. By providing contact holes between them and electrically connecting them, all electrode terminals of devices that electrically control the manufacturing process can be connected.
It is formed of the above-mentioned polysilicon and has a structure that allows the characteristics of the above-mentioned device to be electrically measured.

Effect: With this structure, transistor characteristics and other electrical characteristics can be measured at the stage of forming a polysilicon pattern, and the time and cost required for measurement can be reduced.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.

FIG. 1 shows the structure of a MOS transistor according to the present invention. In FIG. 1, 1 is a semiconductor substrate, 2 is a source/train diffusion layer, 3 is a field oxide film, 4 is a gate oxide film, and 6 is a polysilicon film.

Here, the manufacturing process of the MOS transistor of the embodiment will be described. First, an oxide film is grown on the semiconductor substrate 1, a Si3N4 film is grown, and a selective diffusion region pattern is formed. Next, after forming the field oxide film 3, the oxide film/Si3N4 film is removed, and the gate oxide film 4 and polysilicon film are grown. At this time, a contact hole is provided in the gate oxide film 4 between the selective oxidation region and the polysilicon layer 6 (and a polysilicon pattern is formed and a source train 2 is formed).

By providing the contact holes as described above, it is possible to electrically connect between the polysilicon layer 6 and the source/drain layer 2, and the polysilicon layer can be used as an electrode for electrically controlling the manufacturing process. It can be a terminal. By applying a voltage to this electrode terminal, it becomes possible to measure the current between the gate, source, train, and substrate.

FIG. 2 shows the structure of a resistor using a diffusion layer according to another embodiment of the present invention.

In FIG. 2, ■ represents an N-type silicon substrate, 2 represents a P-type wave diffusion layer resistance region, 3 represents a field oxide film, and 6 represents a polysilicon.

To explain the manufacturing process of this example, first, N
An oxide film is grown on a shaped silicon substrate 1, a Si3N4 film is grown, a contact hole is formed after field oxidation, and a P water diffusion layer 2 is formed. Here, the Si3N4 film is removed and a polysilicon layer is formed.

By using this polysilicon electrode as an electrode terminal, a voltage can be applied and the value of the current flowing through the resistor can be measured.

As described above, according to this embodiment, by forming a contact window between the diffusion layer and the polysilicon layer, the current value of the resistor is measured at the stage of polysilicon formation, and the manufacturing process is managed. be able to.

Effects of the Invention According to the present invention, by forming a contact hole on the source-train diffusion layer, polysilicon is formed extending from the contact hole onto the field oxide film to electrically connect them. Transistor characteristics and other electrical characteristics can be measured at the stage of polysilicon pattern formation using the polysilicon as an electrode. Therefore, it is possible to reduce the time and cost required to measure the characteristics.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of the structure of a MOS transistor according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a resistor according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional MOS transistor. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Selected diffusion region (source train), 3... Field oxide film, 4... Gate oxide film, 5... ...Insulating film, 6...Polysilicon.

Claims (1)

[Claims] 1. A semiconductor device comprising a diffusion layer in a semiconductor substrate and a polysilicon electrode terminal electrically connected through a contact hole formed in an oxide film on the diffusion layer.