JPH0119470B2 - - Google Patents
Info
- Publication number
- JPH0119470B2 JPH0119470B2 JP30577586A JP30577586A JPH0119470B2 JP H0119470 B2 JPH0119470 B2 JP H0119470B2 JP 30577586 A JP30577586 A JP 30577586A JP 30577586 A JP30577586 A JP 30577586A JP H0119470 B2 JPH0119470 B2 JP H0119470B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- priority information
- substrate
- film growth
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 81
- 239000010409 thin film Substances 0.000 claims description 27
- 238000001947 vapour-phase growth Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30577586A JPS63157875A (ja) | 1986-12-22 | 1986-12-22 | 薄膜成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30577586A JPS63157875A (ja) | 1986-12-22 | 1986-12-22 | 薄膜成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63157875A JPS63157875A (ja) | 1988-06-30 |
| JPH0119470B2 true JPH0119470B2 (ko) | 1989-04-11 |
Family
ID=17949197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30577586A Granted JPS63157875A (ja) | 1986-12-22 | 1986-12-22 | 薄膜成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63157875A (ko) |
-
1986
- 1986-12-22 JP JP30577586A patent/JPS63157875A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63157875A (ja) | 1988-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR880001438B1 (ko) | 반도체 기상성장장치 | |
| JP5040213B2 (ja) | 熱処理装置、熱処理方法及び記憶媒体 | |
| CN107230654B (zh) | 控制装置、基板处理系统、基板处理方法以及存储介质 | |
| CN101807515A (zh) | 多区域电阻加热器 | |
| US5121531A (en) | Refractory susceptors for epitaxial deposition apparatus | |
| JP4731755B2 (ja) | 移載装置の制御方法および熱処理方法並びに熱処理装置 | |
| JP5049303B2 (ja) | 熱処理装置、熱処理装置の温度調整方法、及び、プログラム | |
| KR100809768B1 (ko) | 열처리방법 및 열처리장치 | |
| WO2021059492A1 (ja) | 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム | |
| US20170278714A1 (en) | Control device, substrate processing system, substrate processing method, and program | |
| US20050124084A1 (en) | Substrate processing apparatus, control method for the apparatus, and program for implementing the method | |
| JPH05152215A (ja) | 成膜装置 | |
| JPH0119470B2 (ko) | ||
| JPH098098A (ja) | 移載アームのティーチング方法 | |
| JP2857097B2 (ja) | 真空処理装置 | |
| EP2341163A1 (en) | Method of forming a film | |
| JP2729266B2 (ja) | 熱処理装置 | |
| JP2511845B2 (ja) | 気相成長などの処理装置 | |
| KR100781417B1 (ko) | 열처리장치 및 열처리방법 | |
| JPH07520B2 (ja) | 気相成長装置 | |
| JP7257998B2 (ja) | 基板処理装置、半導体装置の製造方法、及びプログラム | |
| JPH09181060A (ja) | 薄膜成膜装置 | |
| JP2001102424A (ja) | マルチチャンバ型処理装置 | |
| JP3449707B2 (ja) | 半導体製造装置及び半導体製造装置に於けるウェーハ移載方法及び半導体素子の製造方法 | |
| JPS62130515A (ja) | 半導体製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |