JPH01189553A - ガスセンサー用酸化スズ半導体およびその製造方法 - Google Patents

ガスセンサー用酸化スズ半導体およびその製造方法

Info

Publication number
JPH01189553A
JPH01189553A JP1261088A JP1261088A JPH01189553A JP H01189553 A JPH01189553 A JP H01189553A JP 1261088 A JP1261088 A JP 1261088A JP 1261088 A JP1261088 A JP 1261088A JP H01189553 A JPH01189553 A JP H01189553A
Authority
JP
Japan
Prior art keywords
tin oxide
gas
sno2
gas sensor
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1261088A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0532697B2 (OSRAM
Inventor
Yukio Nakanouchi
中野内　幸雄
Yasutarou Tawara
田原　靖太郎
Wataru Sato
亘 佐藤
Kazuhiro Takahashi
高橋　一洋
Takeshi Masumoto
健 増本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Riken Keiki KK
Riken Corp
Japan Science and Technology Agency
Original Assignee
Riken Keiki KK
Riken Corp
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Riken Keiki KK, Riken Corp, Research Development Corp of Japan filed Critical Riken Keiki KK
Priority to JP1261088A priority Critical patent/JPH01189553A/ja
Publication of JPH01189553A publication Critical patent/JPH01189553A/ja
Publication of JPH0532697B2 publication Critical patent/JPH0532697B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP1261088A 1988-01-25 1988-01-25 ガスセンサー用酸化スズ半導体およびその製造方法 Granted JPH01189553A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1261088A JPH01189553A (ja) 1988-01-25 1988-01-25 ガスセンサー用酸化スズ半導体およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1261088A JPH01189553A (ja) 1988-01-25 1988-01-25 ガスセンサー用酸化スズ半導体およびその製造方法

Publications (2)

Publication Number Publication Date
JPH01189553A true JPH01189553A (ja) 1989-07-28
JPH0532697B2 JPH0532697B2 (OSRAM) 1993-05-17

Family

ID=11810133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1261088A Granted JPH01189553A (ja) 1988-01-25 1988-01-25 ガスセンサー用酸化スズ半導体およびその製造方法

Country Status (1)

Country Link
JP (1) JPH01189553A (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07198646A (ja) * 1993-12-04 1995-08-01 Lg Electron Inc 低消費電力型薄膜ガスセンサ及びその製造方法
US6311545B1 (en) 1998-03-11 2001-11-06 Nissan Chemical Industries, Ltd. Anhydrous zinc antimonate semiconductor gas sensor and method for producing the same
KR100477422B1 (ko) * 2002-01-11 2005-03-23 동양물산기업 주식회사 암모니아 가스 검지용 반도체식 박막 가스 센서의 제조방법 및 센서 소자
WO2009130884A1 (ja) * 2008-04-22 2009-10-29 日本特殊陶業株式会社 ガスセンサ
JPWO2008081921A1 (ja) * 2006-12-28 2010-04-30 株式会社ミクニ 水素センサ及びその製造方法
CN101368930B (zh) 2008-09-02 2011-10-12 徐州市精英电器技术有限公司 卤素制冷剂检测传感器敏感材料及气敏元件的制造方法
CN101329294B (zh) 2007-06-22 2012-05-23 郑州炜盛电子科技有限公司 一种抗干扰性强的气体传感器
CN101329293B (zh) 2007-06-22 2012-05-23 郑州炜盛电子科技有限公司 一种用于酒精蒸汽和呼气酒精检测的半导体气体传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889792A (OSRAM) * 1972-02-28 1973-11-22
JPS5774648A (en) * 1980-08-28 1982-05-10 Siemens Ag Selective thin film gas sensor and manufacture thereof
JPS607353A (ja) * 1983-06-27 1985-01-16 Toshiba Corp 感ガス素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889792A (OSRAM) * 1972-02-28 1973-11-22
JPS5774648A (en) * 1980-08-28 1982-05-10 Siemens Ag Selective thin film gas sensor and manufacture thereof
JPS607353A (ja) * 1983-06-27 1985-01-16 Toshiba Corp 感ガス素子

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07198646A (ja) * 1993-12-04 1995-08-01 Lg Electron Inc 低消費電力型薄膜ガスセンサ及びその製造方法
US6311545B1 (en) 1998-03-11 2001-11-06 Nissan Chemical Industries, Ltd. Anhydrous zinc antimonate semiconductor gas sensor and method for producing the same
KR100477422B1 (ko) * 2002-01-11 2005-03-23 동양물산기업 주식회사 암모니아 가스 검지용 반도체식 박막 가스 센서의 제조방법 및 센서 소자
JPWO2008081921A1 (ja) * 2006-12-28 2010-04-30 株式会社ミクニ 水素センサ及びその製造方法
JP5184375B2 (ja) * 2006-12-28 2013-04-17 株式会社ミクニ 水素センサ及びその製造方法
CN101329294B (zh) 2007-06-22 2012-05-23 郑州炜盛电子科技有限公司 一种抗干扰性强的气体传感器
CN101329293B (zh) 2007-06-22 2012-05-23 郑州炜盛电子科技有限公司 一种用于酒精蒸汽和呼气酒精检测的半导体气体传感器
WO2009130884A1 (ja) * 2008-04-22 2009-10-29 日本特殊陶業株式会社 ガスセンサ
JP4921556B2 (ja) * 2008-04-22 2012-04-25 日本特殊陶業株式会社 ガスセンサ
CN101368930B (zh) 2008-09-02 2011-10-12 徐州市精英电器技术有限公司 卤素制冷剂检测传感器敏感材料及气敏元件的制造方法

Also Published As

Publication number Publication date
JPH0532697B2 (OSRAM) 1993-05-17

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