JPH01183176A - Manufacture of thin superconducting film - Google Patents
Manufacture of thin superconducting filmInfo
- Publication number
- JPH01183176A JPH01183176A JP63007332A JP733288A JPH01183176A JP H01183176 A JPH01183176 A JP H01183176A JP 63007332 A JP63007332 A JP 63007332A JP 733288 A JP733288 A JP 733288A JP H01183176 A JPH01183176 A JP H01183176A
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal
- copper
- oxygen
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 20
- 239000010408 film Substances 0.000 abstract description 10
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 7
- 230000001747 exhibiting effect Effects 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、Ｉ［ａ族−ＩＩａ族−銅一酸素からなる超
電導薄膜の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing a superconducting thin film consisting of I[group a-group IIa-copper-oxygen.
超電導材料をジョセフソン素子や５ＱＵＩＤセンサなど
の各種クライオエレクトロニクス材料として利用する場
合には、その薄膜化が必要であるため、従来より種々の
超電導薄膜の製造方法が提案されている。代表的な製造
方法としては、イオンビームスパッタリング法、イオン
アシスト蒸着法、クラスタイオンビーム蒸着法、分子線
エピタキシー法等のＰＶＤ法があげられる。When using superconducting materials as various cryoelectronic materials such as Josephson elements and 5QUID sensors, it is necessary to reduce the thickness of the superconducting materials, so various methods for manufacturing superconducting thin films have been proposed. Typical manufacturing methods include PVD methods such as ion beam sputtering, ion assisted deposition, cluster ion beam deposition, and molecular beam epitaxy.
また、超電導薄膜の種類では、主としてｌ１ｌａ族−Ｉ
Ｉａ族−銅−酸素（または稀土類元素−ＩＩａ族−銅一
酸素）から組成の薄膜が液体窒素温度７７にで超電導特
性を示している。このような超電導薄膜としては、ＹＢ
ａ ２Ｃｕ ３０ ｂ ＋。、 ＥｒＢａｚＣｕ３０６
＋、。In addition, among the types of superconducting thin films, mainly l1la group-I
A thin film having a composition of group Ia-copper-oxygen (or rare earth element-group IIa-copper-oxygen) exhibits superconducting properties at a liquid nitrogen temperature of 77°C. As such a superconducting thin film, YB
a 2Cu 30 b +. , ErBazCu306
+,.
ＨｏＢａ２ＣｕＪ６＋＋＋ （式中、Ｘは１．０〜０．
４である）などが知られている。HoBa2CuJ6+++ (wherein, X is 1.0 to 0.
4) are known.
たとえばスパッタリング法においては、ターゲット組成
とこれをスパッタして得られる薄膜組成との間に大幅な
組成ずれが生じ、薄膜の組成を超電導特性を示す化学量
論的な組成、たとえばＹ−Ｂａ−Ｃｕ−０薄膜ではＹ：
Ｂａ：Ｃｕが１＝２：３の組成にならず、超電導膜を安
定して得られない。For example, in the sputtering method, a large compositional deviation occurs between the target composition and the thin film composition obtained by sputtering the target composition, and the composition of the thin film is changed to a stoichiometric composition exhibiting superconducting properties, such as Y-Ba-Cu. -0 thin film Y:
The composition of Ba:Cu is not 1=2:3, and a superconducting film cannot be stably obtained.
この発明の超電導薄膜の製造方法は、ｎｌａ族金属：Ｉ
Ｉａ族族金属：銅酸酸素割合が１：２〜４：５〜７：０
〜７であるＩＩＩａ族金属および／またはその酸化物と
、ＩＩＩａ族金属および／またはその酸化物と、銅およ
び／またはその酸化物とを、酸素分圧比（０□／不活性
ガス）が１０〜２００％の雰囲気中にて基板上に付着さ
せ、ＩＩＩａ族−Ｔｌａ族−銅一酸素・薄膜を作成する
ものである。The method for producing a superconducting thin film of the present invention includes: NLA group metal: I
Group Ia group metal: cuprate oxygen ratio of 1:2 to 4:5 to 7:0
Group IIIa metal and/or its oxide having an oxygen concentration of ~7, Group IIIa metal and/or its oxide, and copper and/or its oxide having an oxygen partial pressure ratio (0□/inert gas) of 10 to It is deposited on a substrate in a 200% atmosphere to create a IIIa group-Tla group-copper-oxygen thin film.
前記ＩＩＩａＩＩＩａ族金属ては、たとえばＹ、Ｓｃ。The IIIa group metals include, for example, Y and Sc.
Ｈｏ、Ｅｒ等があげられる。また、前記ＩＴａ族金属と
しては、たとえばＢａ、Ｓｒ等があげられる。Examples include Ho and Er. Furthermore, examples of the ITa group metals include Ba, Sr, and the like.
上記各元素を基板上に付着させる手段としては、イオン
ビームスパッタリング法があげられる。Ion beam sputtering can be cited as a means for depositing each of the above elements onto the substrate.
基板としては、たとえばＣ軸に垂直カットしたＭｇＦｚ
＋ ＣａＦｚ＋ サファイア、 ｙｓｚなどがあげられ
る。As a substrate, for example, MgFz cut perpendicular to the C axis
+CaFz+ Sapphire, ysz, etc.
イオンビームスパッタリング法により超電導薄膜を作成
する場合、真空容器内に上記組成のターゲットを装着し
、イオン源より引き出した不活性ガス（Ｎｅ、 Ａｒ＋
Ｋｒ、 Ｘｅ等）のイオンビームをターゲットに照射
してターゲットよりスパッタし、このスパッタ粒子を基
板上に堆積させて薄膜を作成する。このとき、真空容器
内に酸素ガスを導入して０□／不活性ガスの酸素分圧比
が１０〜２００％になるように設定する。When creating a superconducting thin film using the ion beam sputtering method, a target with the above composition is placed in a vacuum container, and an inert gas (Ne, Ar+
A thin film is created by irradiating a target with an ion beam of Kr, Xe, etc., causing sputtering from the target, and depositing the sputtered particles on a substrate. At this time, oxygen gas is introduced into the vacuum container and the oxygen partial pressure ratio of 0□/inert gas is set to be 10 to 200%.
このように、この発明では、ＩＩＩａ族金属：ＩＩａ族
族金属：銅酸酸素割合が１：２〜４：５〜７：０〜７の
ものを用いて、酸素分圧比が１０〜２００％の雰囲気中
にてこれらの元素を基板上に付着させることにより、■
ａ族金属：ＩＩａ族金属：銅の組成比がｌ：２：３で超
電導特性を示す化学量論的組成の超電導薄膜を得ること
が可能になる。Thus, in this invention, a group IIIa metal: group IIa metal: cuprate oxygen ratio of 1:2 to 4:5 to 7:0 to 7 is used, and an oxygen partial pressure ratio of 10 to 200% is used. By depositing these elements on the substrate in an atmosphere, ■
When the composition ratio of group a metal: group IIa metal: copper is 1:2:3, it becomes possible to obtain a superconducting thin film with a stoichiometric composition exhibiting superconducting properties.
このとき、前記Ｉ［［ａ族金属：ＩＩａ族金属：銅の割
合が上記範囲をはずれるときは上記組成比の超電導薄膜
が得られない。また、酸素分圧比が前記範囲より小なる
ときも、大なるときも、ｌ１ｌａ族金属：ＩＩａ族金属
：銅の組成比が１：２：３で安定した超電導特性を示す
薄膜を得ることができない。At this time, when the ratio of I[[a group metal: IIa group metal: copper] is out of the above range, a superconducting thin film having the above composition ratio cannot be obtained. Furthermore, when the oxygen partial pressure ratio is smaller than or larger than the above range, it is not possible to obtain a thin film exhibiting stable superconducting properties with a composition ratio of I1la group metal: IIa group metal: copper of 1:2:3. .
この発明の一実施例を第１図および第２図に基づいて説
明する。第１回はこの発明を実施するためのイオンビー
ムスパッタリング装置を示す説明回である。このスパッ
タリング装置は、直空容器１内に、スパッタ用イオン源
２とターゲット３と基板ヒータ４と酸素ガス導入パイプ
７とを備え、基板ヒータ４には基板５が取付けられ、一
定温度に加熱される。また、イオン源２にはＫｒガス導
入バイブロが接続され、イオン源２からＫｒイオンビー
ム８を引き出すように構成される。このときのＫｒガス
圧は約Ｉ Ｘ １０−’〜４ Ｘ １０−’ｔｏｒｒで
あるのが適当である。An embodiment of the present invention will be described based on FIGS. 1 and 2. The first session is an explanation session showing an ion beam sputtering apparatus for implementing the present invention. This sputtering apparatus includes an ion source 2 for sputtering, a target 3, a substrate heater 4, and an oxygen gas introduction pipe 7 in a direct air container 1. A substrate 5 is attached to the substrate heater 4 and heated to a constant temperature. Ru. Further, a Kr gas introducing vibro is connected to the ion source 2 and configured to extract a Kr ion beam 8 from the ion source 2. Appropriately, the Kr gas pressure at this time is about I x 10-' to 4 x 10-' torr.
基板５への成膜にあたっては、スパッタ用イオン源２か
ら引き出された５００〜２０００ｅＶ程度のエネルギを
もったＫｒイオンビーム８がターゲット３に衝突してス
パッタする。このスパッタによりターゲット３から放出
されたスパッタ粒子が基板５の表面に付着して成膜され
る。ががる成膜の間、ガス導入パイプ７より酸素ガスが
特定の酸素分圧比Ｏｚ／Ｋｒとなるように導入され、前
記スパッタ粒子と反応して基板５上にＩＩＩａ−Ｉ［ａ
−銅−酸素からなる薄膜が形成される。In forming a film on the substrate 5, a Kr ion beam 8 extracted from the sputtering ion source 2 and having an energy of about 500 to 2000 eV collides with the target 3 to cause sputtering. Sputter particles emitted from the target 3 by this sputtering adhere to the surface of the substrate 5 to form a film. During the film formation, oxygen gas is introduced from the gas introduction pipe 7 so as to have a specific oxygen partial pressure ratio Oz/Kr, reacts with the sputtered particles, and forms IIIa-I[a
- A thin film of copper-oxygen is formed.
成膜後、薄膜を酸素ガス雰囲気下（１０〜７６０ ｔｏ
ｒｒ）で６００〜１０００°Ｃで熱処理し、超電導性を
示す斜方晶系の結晶化を促進させる。熱処理温度が前記
範囲よりも高いときは超電導性を示さない正方晶系とな
るため好ましくない。熱処理の時間は０．５〜１０時間
、より好ましくは１〜４時間程度が適当である。熱処理
後、自然放冷等により室温まで冷却させる。After film formation, the thin film is exposed to an oxygen gas atmosphere (10 to 760 to
rr) at 600 to 1000°C to promote orthorhombic crystallization that exhibits superconductivity. When the heat treatment temperature is higher than the above range, it is not preferable because it becomes a tetragonal system that does not exhibit superconductivity. The heat treatment time is suitably 0.5 to 10 hours, more preferably about 1 to 4 hours. After the heat treatment, it is cooled to room temperature by natural cooling or the like.
なお、基板５として線状のものを使用し、これにｎＩａ
族−１１ａ属−銅一酸素からなる超電導薄膜を被覆する
こともでき、これをコイルとして使用すれば超電導コイ
ルを得ることができる。Note that a linear substrate is used as the substrate 5, and nIa is applied to this.
A superconducting thin film made of group-11a-copper-oxygen can also be coated, and if this is used as a coil, a superconducting coil can be obtained.
次に本発明者らが第１図に示すイオンビームスパッタリ
ング装置を用いて行った成膜実験について説明する。Next, a film forming experiment conducted by the present inventors using the ion beam sputtering apparatus shown in FIG. 1 will be described.
ターゲット３としてＹ ： Ｂａ ： Ｃｕの組成比が
１：３：６であるＹ−Ｂａ−Ｃｕ−０の合金を使用し、
これにＫｒイオンビームを照射してスパッタリングを行
った。このとき、真空容器１内に酸素ガスを噴出させ、
酸素分圧比（０□／ Ｋ ｒ ）を０〜２５０％の範囲
で変化させてＹ−Ｂａ−Ｃｕ−０・薄膜を基板５（ＹＳ
Ｚ基板）の表面に堆積させた。スパッタリング条件は以
下の通りである。A Y-Ba-Cu-0 alloy with a Y:Ba:Cu composition ratio of 1:3:6 was used as the target 3,
This was irradiated with a Kr ion beam to perform sputtering. At this time, oxygen gas is ejected into the vacuum container 1,
The Y-Ba-Cu-0 thin film was deposited on the substrate 5 (YS
Z substrate). The sputtering conditions are as follows.
加速電圧： １５００Ｖ
イオン電流： ４０ｍＡ
基板温度： ３００℃
膜厚：１．２μｍ
成膜速度＝ ２５０人／分
基板上に形成された薄膜の組成をＥＳＣＡにより分析し
た。その結果を第２図に示す。第２図から、酸素分圧比
（酸素ガス／Ｋｒガス）が１０〜２００％において、イ
ツトリウムに対するバリウムと銅の割合はほとんど変化
がなく、超電導特性を示す割合、すなわちＹ：Ｂａ：Ｃ
ｕが１：２：３にあるのに対して、酸素分圧比力月０％
より小なるときはＢａ量が増加しＣｕ量が減少し、また
２００％より大なるときはＢａ量が減少しＣｕ量が増加
した。Accelerating voltage: 1500 V Ion current: 40 mA Substrate temperature: 300° C. Film thickness: 1.2 μm Film forming rate = 250 persons/min The composition of the thin film formed on the substrate was analyzed by ESCA. The results are shown in FIG. From Figure 2, when the oxygen partial pressure ratio (oxygen gas/Kr gas) is 10 to 200%, the ratio of barium and copper to yttrium hardly changes, and the ratio exhibiting superconducting properties, that is, Y:Ba:C
While u is 1:2:3, oxygen partial pressure specific force is 0%
When it was smaller, the Ba amount increased and the Cu amount decreased, and when it was more than 200%, the Ba amount decreased and the Cu amount increased.
、 このようにして得られた薄膜を電気炉にて酸素雰
囲気中で９３０°Ｃで１時間保持し、ついで徐冷し５５
０°Ｃで４時間アニーリングを行った。このものを液体
窒素中に浸漬し、四端子法にて電気抵抗を測定したとこ
ろ、酸素分圧比が１０〜２００％の条件下で作成した薄
膜において、電気抵抗が０であった。The thin film thus obtained was held at 930°C for 1 hour in an oxygen atmosphere in an electric furnace, and then slowly cooled to 55°C.
Annealing was performed at 0°C for 4 hours. When this material was immersed in liquid nitrogen and its electrical resistance was measured by a four-terminal method, the electrical resistance was 0 for the thin film created under conditions where the oxygen partial pressure ratio was 10 to 200%.
なお、不活性ガスとして、Ｋｒに代えてＡｒ等の他の不
活性ガスを用いた場合にも同様の結果が得られた。Note that similar results were obtained when other inert gases such as Ar were used instead of Kr.
この発明によれば、Ｉ［Ｉａａ金属：ＩＩａ族族金属：
銅酸酸素比が１：２〜４：５〜７：ｏ〜７のものを用い
て、酸素分圧比が１０〜２００％の雰囲気中にてこれら
の元素を基板上に付着させることにより、Ｉ［［ａ族金
属：ＩＩａ族金属：銅の組成比が１’： ２ ： ３と
なった化学量論的組成の薄膜を得ることが可能となり、
安定した超電導特性を発現させることができる。According to this invention, I[Iaa metal: Group IIa metal:
I. [[It is now possible to obtain a thin film with a stoichiometric composition in which the composition ratio of group a metal: group IIa metal: copper is 1': 2: 3,
Stable superconducting properties can be developed.
第１図はこの発明の一実施例で使用するイオンビームス
パッタリング装置の概略図、第２図は酸素分圧比と薄膜
組成比との関係を示すグラフである。
１−真空容器、２−イオン源、３−ターゲット、５一基
板、６−・−Ｋｒガス導入パイプ、７−酸素ガス導入パ
イプFIG. 1 is a schematic diagram of an ion beam sputtering apparatus used in an embodiment of the present invention, and FIG. 2 is a graph showing the relationship between oxygen partial pressure ratio and thin film composition ratio. 1-Vacuum container, 2-Ion source, 3-Target, 5-Substrate, 6--Kr gas introduction pipe, 7-Oxygen gas introduction pipe
Claims (1)
〜４：５〜７：０〜７であるIIIａ族金属および／また
はその酸化物と、IIａ族金属および／またはその酸化物
と、銅および／またはその酸化物とを、酸素分圧比（Ｏ
＿２／不活性ガス）が１０〜２００％の雰囲気中にて基
板上に付着させ、IIIａ族−IIａ族−銅−酸素・薄膜を
作成することを特徴とする超電導薄膜の製造方法。The ratio of group IIIa metal: group IIa metal: copper: oxygen is 1:2.
The group IIIa metal and/or its oxide, the group IIa metal and/or its oxide, and the copper and/or its oxide are mixed at an oxygen partial pressure ratio (O
_2/inert gas) is deposited on a substrate in an atmosphere of 10 to 200% to form a group IIIa-group IIa-copper-oxygen thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63007332A JPH01183176A (en) | 1988-01-16 | 1988-01-16 | Manufacture of thin superconducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63007332A JPH01183176A (en) | 1988-01-16 | 1988-01-16 | Manufacture of thin superconducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01183176A true JPH01183176A (en) | 1989-07-20 |
Family
ID=11663000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63007332A Pending JPH01183176A (en) | 1988-01-16 | 1988-01-16 | Manufacture of thin superconducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01183176A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01188664A (en) * | 1988-01-22 | 1989-07-27 | Sumitomo Electric Ind Ltd | Production of superconducting thin film |
| US5747427A (en) * | 1991-11-15 | 1998-05-05 | Hokkaido Electric Power Co., Inc. | Process for forming a semiconductive thin film containing a junction |
-
1988
- 1988-01-16 JP JP63007332A patent/JPH01183176A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01188664A (en) * | 1988-01-22 | 1989-07-27 | Sumitomo Electric Ind Ltd | Production of superconducting thin film |
| US5747427A (en) * | 1991-11-15 | 1998-05-05 | Hokkaido Electric Power Co., Inc. | Process for forming a semiconductive thin film containing a junction |
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