JPH01176299A - Ga↓1↓−↓xAl↓xAsの結晶成長方法 - Google Patents
Ga↓1↓−↓xAl↓xAsの結晶成長方法Info
- Publication number
- JPH01176299A JPH01176299A JP15088A JP15088A JPH01176299A JP H01176299 A JPH01176299 A JP H01176299A JP 15088 A JP15088 A JP 15088A JP 15088 A JP15088 A JP 15088A JP H01176299 A JPH01176299 A JP H01176299A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- growth
- time
- crystal
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15088A JPH01176299A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAsの結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15088A JPH01176299A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAsの結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01176299A true JPH01176299A (ja) | 1989-07-12 |
JPH0477714B2 JPH0477714B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Family
ID=11466009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15088A Granted JPH01176299A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAsの結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01176299A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-05 JP JP15088A patent/JPH01176299A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0477714B2 (enrdf_load_stackoverflow) | 1992-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |