JPH01176299A - Ga↓1↓−↓xAl↓xAsの結晶成長方法 - Google Patents

Ga↓1↓−↓xAl↓xAsの結晶成長方法

Info

Publication number
JPH01176299A
JPH01176299A JP15088A JP15088A JPH01176299A JP H01176299 A JPH01176299 A JP H01176299A JP 15088 A JP15088 A JP 15088A JP 15088 A JP15088 A JP 15088A JP H01176299 A JPH01176299 A JP H01176299A
Authority
JP
Japan
Prior art keywords
layer
growth
time
crystal
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15088A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0477714B2 (enrdf_load_stackoverflow
Inventor
Ko Takahashi
高橋 香
Sumio Ishimatsu
石松 純男
Masaaki Sakata
雅昭 坂田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP15088A priority Critical patent/JPH01176299A/ja
Publication of JPH01176299A publication Critical patent/JPH01176299A/ja
Publication of JPH0477714B2 publication Critical patent/JPH0477714B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15088A 1988-01-05 1988-01-05 Ga↓1↓−↓xAl↓xAsの結晶成長方法 Granted JPH01176299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15088A JPH01176299A (ja) 1988-01-05 1988-01-05 Ga↓1↓−↓xAl↓xAsの結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15088A JPH01176299A (ja) 1988-01-05 1988-01-05 Ga↓1↓−↓xAl↓xAsの結晶成長方法

Publications (2)

Publication Number Publication Date
JPH01176299A true JPH01176299A (ja) 1989-07-12
JPH0477714B2 JPH0477714B2 (enrdf_load_stackoverflow) 1992-12-09

Family

ID=11466009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15088A Granted JPH01176299A (ja) 1988-01-05 1988-01-05 Ga↓1↓−↓xAl↓xAsの結晶成長方法

Country Status (1)

Country Link
JP (1) JPH01176299A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0477714B2 (enrdf_load_stackoverflow) 1992-12-09

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