JPH01171236A - Prober apparatus - Google Patents

Prober apparatus

Info

Publication number
JPH01171236A
JPH01171236A JP62328291A JP32829187A JPH01171236A JP H01171236 A JPH01171236 A JP H01171236A JP 62328291 A JP62328291 A JP 62328291A JP 32829187 A JP32829187 A JP 32829187A JP H01171236 A JPH01171236 A JP H01171236A
Authority
JP
Japan
Prior art keywords
wafer
probes
probe
ultrasonic
supersonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62328291A
Other languages
Japanese (ja)
Inventor
Mikio Kiyono
清野 幹雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62328291A priority Critical patent/JPH01171236A/en
Publication of JPH01171236A publication Critical patent/JPH01171236A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06794Devices for sensing when probes are in contact, or in position to contact, with measured object

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To ensure contact between a plurality of probes and a wafer to be tested, by giving suttle supersonic vibration to the wafer to be tested, detecting the vibration by means of pickups mounted on the probes and obtaining a logical product of a plurality of outputs detected by the probes by means of an AND circuit. CONSTITUTION:A supersonic oscillator 4 is actuated and a supersonic vibrator 3 is excited to give suttle supersonic vibration to a wafer to be tested 1. A pair of probes 5, 6 are put close to pads on the wafer 1. When the probe 5 is contacted with the wafer 1, the supersonic vibration of the wafer 1 is transmitted to the probes 5, 6. The supersonic vibration is converted into electrical signals by supersonic pickups 7, 8, and amplified so that detecting circuits 9, 10 detect supersonic vibration on the probes. Logical product of the outputs from the detecting circuits 9 and 10 is obtained by an AND circuit 11. Output from the AND circuit 11 is obtained when both the probes 5 and 6 are contacted with the wafer 1. Accordingly, nondefective wafers 1 can be selected correctly by operating a measuring device only when output is obtained from the AND circuit 11.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、LSIの試験装置に関し、特にP/Wテスト
つまり、半導体ウェハーを試験するために使用するプロ
ーバ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an LSI testing device, and more particularly to a P/W test, that is, a prober device used for testing a semiconductor wafer.

〔従来の技術〕[Conventional technology]

一般に、L S I (Large 5cale In
tegration  )の製造工程において半導体ウ
ェハー上に多数形成されたLSIチップは、まずカット
されるまえのウェハーの状態で良品選別が行われる。こ
のP/Wテスト(Probing by Wefer 
)ではプローツクを用いて被試験チップをLSIテスタ
ーに接続する。
Generally, LSI (Large 5cale In
A large number of LSI chips are formed on a semiconductor wafer in the manufacturing process (tegration), and the wafer is first sorted to be non-defective before it is cut. This P/W test (Probing by Wefer
), the chip under test is connected to the LSI tester using a probe.

すなわち、プローバの探針をLSIチップの人出力パッ
ドに立てることによってLSIテスターと被試験チップ
とを電気的に接続することによって行っていた。
That is, this was done by electrically connecting the LSI tester and the chip under test by placing the probe of the prober on the human output pad of the LSI chip.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、上述した従来のブローバ装置にあっては、P
/Wテストを行うに先だって被試験半導体ウェハーを乗
せるステージの位置ぎめをまず行う。このステージは、
水平および垂直両方向に微動可能であり、被試験ウェハ
ーと同じ厚さのダミー・ウェハーを用いて探針が確実に
被試験ウェハーと接触する垂直方向の位置を決定する。
By the way, in the conventional blower device mentioned above, P
/W Before performing the test, the stage on which the semiconductor wafer to be tested is placed is first positioned. This stage is
A dummy wafer that is movable both horizontally and vertically and has the same thickness as the wafer under test is used to determine the vertical position where the probe reliably contacts the wafer under test.

この位置ぎめ操作ではダミー・ウェハーと探針との接触
は探針とダミー・ウェハーの導通の有無により確認され
る。実際のP/Wテストでは被試験ウェハーをステージ
に乗せ、上述の手順で予め定められた位置にステージを
移動させて探針をたてる。。
In this positioning operation, contact between the dummy wafer and the probe is confirmed by the presence or absence of electrical continuity between the probe and the dummy wafer. In an actual P/W test, a wafer to be tested is placed on a stage, and the stage is moved to a predetermined position according to the above-described procedure to set up a probe. .

このとき、ウェハーと探針との接触は、直接確認するこ
とはできない。従って、従来のP/Wテストではウェハ
ーに異常がなくとも探針の接触不良が原因でテストが不
成功になるおそれがあった。
At this time, contact between the wafer and the probe cannot be directly confirmed. Therefore, in the conventional P/W test, even if there is no abnormality in the wafer, the test may fail due to poor contact of the probe.

このような危険性は、LSIのピンの数が増えれば増え
るほど増加するものである。また、この探針の接触不良
によるテスト不成功はその原因をつきとめる事が困難で
ありP/Wテストに多大の時間を要するという欠点があ
った。
Such a risk increases as the number of pins on an LSI increases. Furthermore, it is difficult to determine the cause of a test failure due to poor contact of the probe, and the P/W test requires a large amount of time.

本発明の目的は、上述した従来の欠点に鑑みなされたも
ので、被試験ウェハーと探針との接触を確実なものとし
、半導体ウェハーの欠陥のみを検出することの出来るプ
ローバ装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention has been made in view of the above-mentioned drawbacks of the conventional art, and it is an object of the present invention to provide a prober device that can ensure the contact between a wafer under test and a probe, and can detect only defects in a semiconductor wafer. It is in.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に係るブローバ装置は、水平・垂直方向に微動可
能で被試験半導体ウェハーを固定するステージと、この
ステージに装着された超音波振動子と、これを励振する
超音波発振器と、探針と、探針に装着した超音波ピック
・アップと、このビック・アップからの出力信号を増幅
し超音波信号を検出する検出回路と、複数の検出回路の
出力信号の論理積を得るアンド回路とを有し、それぞれ
の探針に確実にウェハーを接触させる。このため、探針
の接触不良に起因するテストの不成功を未然に防止する
ことができる。
The blower device according to the present invention includes a stage that is movable horizontally and vertically and that fixes a semiconductor wafer under test, an ultrasonic vibrator attached to this stage, an ultrasonic oscillator that excites the same, and a probe. , an ultrasonic pickup attached to the probe, a detection circuit that amplifies the output signal from the pickup and detects the ultrasonic signal, and an AND circuit that performs the logical product of the output signals of the plurality of detection circuits. to ensure that the wafer is in contact with each probe. Therefore, failure of the test due to poor contact of the probe can be prevented.

〔実施例〕〔Example〕

以下本発明の一実施例を添付図面を参照しながら説明す
る。
An embodiment of the present invention will be described below with reference to the accompanying drawings.

第1図は本発明の一実施例を示す構成図である。FIG. 1 is a block diagram showing an embodiment of the present invention.

同図において、ブローバ装置は、被試験ウェハー1の載
置されるステージ2と、このステージ2を振動させる超
音波振動子3とこの超音波振動子3を励振する超音波発
振器4と、探針5.6と、この探針にそれぞれ装着され
た超音波ピックアップ8.9と、この超音波ピックアッ
プと接続された検出回路9,10と、検出回路と接続さ
れた論理量の1つであるアンド回路11等から構成され
ている。また、探針7,8は図示しない測定装置あるい
はICテスタ等に接続されておりLSIチップの特性を
測定する。一方、アンド回路11は図外の測定装置ある
いはICテスタ等に接続され全ての探針が被試験ウェハ
ー1に正しく接触しているか否かを検出し、正しく接触
している場合のみ信号を発生する。
In the figure, the blower device includes a stage 2 on which a wafer under test 1 is placed, an ultrasonic vibrator 3 that vibrates the stage 2, an ultrasonic oscillator 4 that excites the ultrasonic vibrator 3, and a probe. 5.6, an ultrasonic pickup 8.9 attached to each probe, detection circuits 9 and 10 connected to the ultrasonic pickup, and an AND which is one of the logical quantities connected to the detection circuit. It is composed of a circuit 11 and the like. Further, the probes 7 and 8 are connected to a measuring device or an IC tester (not shown) to measure the characteristics of the LSI chip. On the other hand, the AND circuit 11 is connected to a measuring device or an IC tester (not shown), and detects whether all the probes are in proper contact with the wafer under test 1, and generates a signal only when the probes are in proper contact with the wafer under test 1. .

次に本実施例のプローバ装置の使用手順について説明す
る。まず、ステージ2の位置を探針5゜6の先端高さよ
り下げた状態で被試験ウェハー1をステージ2に図外の
クランプで固定する。この状態で超音波発振器4を起動
し超音波振動子3を励振して被試験ウェハー1に微妙な
超音波振動を与える。次にステージ2を上方向に移動さ
せ、予め位置ぎめされている被試験ウェハー1のパッド
に2本の探針5,6を近づけていく。ここで被試験ウェ
ハー1と探針5とが接触すると被試験ウェハー1の超音
波振動が探針5,6に伝わる。この超音波振動は探針5
.6に装着された超音波ピックアップ7.8によって電
気信号に変換されたのち増幅され検出回路9,10によ
って探針の超音波振動の有無が判別される。
Next, the procedure for using the prober device of this embodiment will be explained. First, the wafer 1 to be tested is fixed to the stage 2 with a clamp (not shown) with the stage 2 positioned lower than the height of the tip of the probe 5.6. In this state, the ultrasonic oscillator 4 is activated and the ultrasonic vibrator 3 is excited to apply subtle ultrasonic vibrations to the wafer 1 under test. Next, the stage 2 is moved upward, and the two probes 5 and 6 are brought close to the pads of the wafer 1 to be tested that have been positioned in advance. When the wafer under test 1 and the probe 5 come into contact here, the ultrasonic vibrations of the wafer under test 1 are transmitted to the probes 5 and 6. This ultrasonic vibration is caused by the probe 5
.. The signal is converted into an electric signal by an ultrasonic pickup 7.8 mounted on the probe 6, and then amplified, and the presence or absence of ultrasonic vibration of the probe is determined by detection circuits 9 and 10.

超音波振動が有るということは探針が被試験ウェハー1
に接触しているということである。本実施例では検出回
路9と検出回路10との論理積をアンド回路11で作成
しており、探針5と探針6の双方が被試験ウェハー1に
接触した時初めてアンド回路11からの出力を(与るこ
とができる。
The presence of ultrasonic vibration means that the probe is on the wafer under test 1.
This means that it is in contact with. In this embodiment, the AND circuit 11 generates the logical product of the detection circuit 9 and the detection circuit 10, and the output from the AND circuit 11 is not produced until both the probe 5 and the probe 6 come into contact with the wafer under test 1. (can be given.

従って、このアンド回路11からの出力があるときのみ
測定装置を操作すれば被試験ウェハーlの良品選別を正
確に行うことができる。
Therefore, by operating the measuring device only when there is an output from the AND circuit 11, it is possible to accurately select non-defective wafers I to be tested.

なお、以上の実施例においては探針が2本の場合につい
て説明したが本発明は、これに限ることなく複数の探針
、具体的には10本以上であってもよい。
Although the above embodiments have been described with reference to the case where there are two probes, the present invention is not limited to this and may include a plurality of probes, specifically 10 or more probes.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、本発明のブローバ装置は被
試験ウェハーに微少な超音波振動を与え、これを探針に
装着した超音波ピックアップを用いて検出し、複数の探
針から得られた複数の検出出力の論理積をアンド回路に
より求めることにより複数の探針と被試験ウェハーとの
接触を確実なものとすることができる。従って、ウェハ
ーの検査を能率的に行うことができる。また、ウェハー
は正常であるにもかかわらす探針との接触不良でテスト
が不成功となることもない。
As explained in detail above, the blower device of the present invention applies minute ultrasonic vibrations to the wafer under test, detects this using an ultrasonic pickup attached to a probe, and detects the ultrasonic vibrations obtained from a plurality of probes. By calculating the logical product of a plurality of detection outputs using an AND circuit, contact between the plurality of probes and the wafer under test can be ensured. Therefore, wafer inspection can be performed efficiently. Furthermore, even if the wafer is normal, the test will not fail due to poor contact with the probe.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例を示すプローバ装置の機器構成図
である。 1・・・・・・被試験ウェハー、 2・・・・・・ステージ、 3・・・・・・超音波振動子、 4・・・・・・超音波発振器、 5.6・・・・・・探針、 7.8・・・・・・超音波ピックアップ、9.10・・
・・・・検出回路、 11・・・・・・アンド回路
The figure is an equipment configuration diagram of a prober device showing an embodiment of the present invention. 1... Wafer under test, 2... Stage, 3... Ultrasonic transducer, 4... Ultrasonic oscillator, 5.6... ...Probe, 7.8...Ultrasonic pickup, 9.10...
...Detection circuit, 11...AND circuit

Claims (1)

【特許請求の範囲】[Claims]  水平および垂直方向に微動可能で被試験半導体ウェハ
ーを固定載置するステージと、このステージに装着され
た超音波振動子と、この超音波振動子を励振する超音波
発振器と、前記半導体ウェハーと接触させる複数の探針
と、これらの探針に装着された超音波ピック・アップと
、この超音波ピック・アップの検出した信号を増幅し超
音波信号を検出する検出回路と、複数の検出回路の出力
信号の論理積を得る論理回路とからなることを特徴とす
るプローバ装置。
A stage that is movable horizontally and vertically and fixedly places a semiconductor wafer under test, an ultrasonic transducer attached to this stage, an ultrasonic oscillator that excites this ultrasonic transducer, and a stage that is in contact with the semiconductor wafer. a plurality of probes, an ultrasonic pickup attached to these probes, a detection circuit that amplifies the signal detected by the ultrasonic pickup and detects the ultrasonic signal, and a plurality of detection circuits. A prober device comprising a logic circuit that obtains an AND of output signals.
JP62328291A 1987-12-26 1987-12-26 Prober apparatus Pending JPH01171236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62328291A JPH01171236A (en) 1987-12-26 1987-12-26 Prober apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62328291A JPH01171236A (en) 1987-12-26 1987-12-26 Prober apparatus

Publications (1)

Publication Number Publication Date
JPH01171236A true JPH01171236A (en) 1989-07-06

Family

ID=18208589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62328291A Pending JPH01171236A (en) 1987-12-26 1987-12-26 Prober apparatus

Country Status (1)

Country Link
JP (1) JPH01171236A (en)

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