JPH01165626U - - Google Patents

Info

Publication number
JPH01165626U
JPH01165626U JP6248988U JP6248988U JPH01165626U JP H01165626 U JPH01165626 U JP H01165626U JP 6248988 U JP6248988 U JP 6248988U JP 6248988 U JP6248988 U JP 6248988U JP H01165626 U JPH01165626 U JP H01165626U
Authority
JP
Japan
Prior art keywords
chamber
plasma
ashing device
wafer
plasma ashing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6248988U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6248988U priority Critical patent/JPH01165626U/ja
Publication of JPH01165626U publication Critical patent/JPH01165626U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは、本考案の一実施例を示す図で
、aは縦断面図、bはその平面図、第2図a,b
は、従来のものを示す図で、aは縦断面図、bは
その平面図である。 尚、図中10はチヤンバー、11はプラズマ室
、12はガス導入口である。
Figures 1a and b are views showing one embodiment of the present invention, in which a is a longitudinal sectional view, b is a plan view thereof, and Figures 2a and b are
1 is a diagram showing a conventional device, in which a is a vertical sectional view and b is a plan view thereof. In the figure, 10 is a chamber, 11 is a plasma chamber, and 12 is a gas inlet.

Claims (1)

【実用新案登録請求の範囲】 チヤンバー内に反応ガスを導入し、これに高周
波電界を加え、プラズマを発生させてレジスト膜
を除去する枚葉式プラズマアツシング装置におい
て、 前記チヤンバーへのガス導入口をプラズマ室の
円筒部に接線方向に設けたことを特徴とする枚葉
式プラズマアツシング装置用チヤンバー。
[Scope of Claim for Utility Model Registration] In a single-wafer plasma ashing device that introduces a reactive gas into a chamber and applies a high-frequency electric field to it to generate plasma and remove a resist film, a gas inlet to the chamber. A chamber for a single-wafer plasma ashing device, characterized in that a chamber is provided in a tangential direction to a cylindrical portion of a plasma chamber.
JP6248988U 1988-05-12 1988-05-12 Pending JPH01165626U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6248988U JPH01165626U (en) 1988-05-12 1988-05-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6248988U JPH01165626U (en) 1988-05-12 1988-05-12

Publications (1)

Publication Number Publication Date
JPH01165626U true JPH01165626U (en) 1989-11-20

Family

ID=31288097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6248988U Pending JPH01165626U (en) 1988-05-12 1988-05-12

Country Status (1)

Country Link
JP (1) JPH01165626U (en)

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