JPH0116511Y2 - - Google Patents
Info
- Publication number
- JPH0116511Y2 JPH0116511Y2 JP1983053186U JP5318683U JPH0116511Y2 JP H0116511 Y2 JPH0116511 Y2 JP H0116511Y2 JP 1983053186 U JP1983053186 U JP 1983053186U JP 5318683 U JP5318683 U JP 5318683U JP H0116511 Y2 JPH0116511 Y2 JP H0116511Y2
- Authority
- JP
- Japan
- Prior art keywords
- heating coil
- frequency heating
- reaction tube
- tube
- fixation frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5318683U JPS59158437U (ja) | 1983-04-08 | 1983-04-08 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5318683U JPS59158437U (ja) | 1983-04-08 | 1983-04-08 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59158437U JPS59158437U (ja) | 1984-10-24 |
| JPH0116511Y2 true JPH0116511Y2 (es) | 1989-05-16 |
Family
ID=30183530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5318683U Granted JPS59158437U (ja) | 1983-04-08 | 1983-04-08 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158437U (es) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319181A (en) * | 1976-08-06 | 1978-02-22 | Hitachi Ltd | Low pressure reaction apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443650Y2 (es) * | 1974-03-14 | 1979-12-17 |
-
1983
- 1983-04-08 JP JP5318683U patent/JPS59158437U/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319181A (en) * | 1976-08-06 | 1978-02-22 | Hitachi Ltd | Low pressure reaction apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59158437U (ja) | 1984-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100435119B1 (ko) | 매엽식처리장치 | |
| JPH0834187B2 (ja) | サセプタ | |
| US6301434B1 (en) | Apparatus and method for CVD and thermal processing of semiconductor substrates | |
| TW202230491A (zh) | 用於半導體晶圓反應器中的預熱環之系統及方法 | |
| JPH0116511Y2 (es) | ||
| JP3693739B2 (ja) | 高周波誘導加熱炉 | |
| JP7392440B2 (ja) | 結晶成長装置 | |
| KR100375396B1 (ko) | 준고온벽을갖춘반응챔버 | |
| JP2004214283A (ja) | 半導体製造装置 | |
| JPH07118466B2 (ja) | サセプタ | |
| JPS59207622A (ja) | 半導体薄膜気相成長装置 | |
| JPS58169906A (ja) | 気相成長装置 | |
| JP2764416B2 (ja) | サセプタ | |
| US20180002809A1 (en) | Cvd reactor with a multi-zone heated process chamber | |
| JPS636833A (ja) | 気相成長装置 | |
| JPS6058613A (ja) | エピタキシャル装置 | |
| JP2848416B2 (ja) | 気相成長装置 | |
| JPH07118465B2 (ja) | 縦型エピタキシャル装置用サセプター | |
| JPS6445767U (es) | ||
| JPS6159279B2 (es) | ||
| JPH0350325U (es) | ||
| JPH03164688A (ja) | 縦型熱処理装置 | |
| JPH03291916A (ja) | サセプタ | |
| JPS6329744Y2 (es) | ||
| JPS624314A (ja) | 気相成長装置用サセプタ |