JPH01161719A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPH01161719A JPH01161719A JP31848187A JP31848187A JPH01161719A JP H01161719 A JPH01161719 A JP H01161719A JP 31848187 A JP31848187 A JP 31848187A JP 31848187 A JP31848187 A JP 31848187A JP H01161719 A JPH01161719 A JP H01161719A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas supply
- substrate
- chamber
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010453 quartz Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 79
- 239000012495 reaction gas Substances 0.000 abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
Abstract
Description
【発明の詳細な説明】
〔概要〕
ランプ加熱方式の気相成長装置に関し、特にガスの供給
方式を改良し、均一な膜生成に適した気相成長装置に関
し、
ランプ光の透過率を安定化することができ、均一な膜の
形成ができる気相成長装置を提供することを目的とし、
基板を収納したチャンバ内にガスを供給し、このチャン
バの石英透過窓を通してランプ加熱する気相成長装置に
おいて、前記チャンバ内に、多数の吹出口を有するリン
グ状のガス供給部を配設し、前記ガス供給部は、前記基
板側に反応ガスを吹き出す第１のガス供給管と、前記石
英透過窓側に反応しないガスを吹き出す第２のガス供給
管とを有することを特徴とする気相成長装置を含み構成
する−０
（産業上の利用分野）
本発明は、ランプ加熱方式の気相成長装置に関し、特に
ガスの供給方式を改良し、均一な膜生成に適した気相成
長装置に関する。[Detailed Description of the Invention] [Summary] The present invention relates to a vapor phase growth apparatus using a lamp heating method, and in particular to a vapor phase growth apparatus suitable for uniform film formation by improving the gas supply method, and stabilizing the transmittance of lamp light. The purpose of this device is to provide a vapor phase growth apparatus that can form a uniform film by supplying gas into a chamber containing a substrate and heating it with a lamp through a quartz transmission window in this chamber. A ring-shaped gas supply section having a large number of blow-off ports is disposed in the chamber, and the gas supply section includes a first gas supply pipe that blows out a reaction gas toward the substrate side, and a first gas supply tube that blows out a reaction gas toward the substrate side, and a ring-shaped gas supply section having a plurality of blow-off ports. Field of the Invention The present invention relates to a lamp-heating type vapor-phase growth apparatus, comprising a vapor-phase growth apparatus characterized by having a second gas supply pipe for blowing out a gas that does not react with the vapor-phase growth apparatus. In particular, the present invention relates to a vapor phase growth apparatus that has an improved gas supply system and is suitable for producing uniform films.
従来、半導体プロセスにおいて、一種またはそれ以上の
化合物ガスを基板上に供給し、基板表面での化学反応に
より所望の薄膜を形成させる化学気相成長（ＣＶＤ）装
置が広（用いられている。このような気相成長装置にお
いて、水平型でランプ加熱方式のものはガスを横方向か
ら供給する方式が一般的である。Conventionally, chemical vapor deposition (CVD) equipment has been widely used in semiconductor processes to supply one or more compound gases onto a substrate and form a desired thin film through a chemical reaction on the substrate surface. Among such vapor phase growth apparatuses, horizontal lamp heating type apparatuses generally supply gas from the side.
第４図は従来のランプ加熱方式によるＣＶＤ装置の断面
図で、同図において、ＣＶＤ装置は水平に載置された基
板１を収容するチャンバ２の上部に石英板３透過窓が設
けられている。FIG. 4 is a cross-sectional view of a conventional CVD apparatus using a lamp heating method. In the figure, the CVD apparatus is equipped with a quartz plate 3 and a transmission window at the top of a chamber 2 that accommodates a horizontally placed substrate 1. .
この石英板３の透過窓の上部には赤外線（ＩＲ）ランプ
４が配置され、チャンバ２には横方向から内部にガスが
供給され、下部にガスを排気する排気口５が設けられて
いる。このＣＶＤ装置では、ＩＲクランプの赤外光が石
英板３を透過しチャンバ２内を加熱し、所定のガスがチ
ャンバ２内に供給されることにより、基板１表面上に化
学気相反応により薄膜が生成される。An infrared (IR) lamp 4 is placed above the transmission window of the quartz plate 3, gas is supplied into the chamber 2 from the lateral direction, and an exhaust port 5 is provided at the bottom to exhaust the gas. In this CVD apparatus, infrared light from an IR clamp passes through a quartz plate 3 and heats the inside of a chamber 2. By supplying a predetermined gas into the chamber 2, a thin film is formed on the surface of a substrate 1 through a chemical vapor phase reaction. is generated.
上述の如きＣＶＤ装置では、ＩＲクランプにより石英板
３が加熱されて温度が上昇し、チャンバ２内に横方向か
ら供給されたガスの反応生成物が石英板３に付着しゴミ
の原因となることがあった。また、石英板３に付着した
反応生成物によりＩＲの透過率が変化し、そのため温度
が不均一化し、基板１上の生成膜が不均一に形成される
問題点があった。In the above-mentioned CVD apparatus, the quartz plate 3 is heated by the IR clamp and the temperature rises, and reaction products of the gas supplied laterally into the chamber 2 adhere to the quartz plate 3 and cause dust. was there. Further, there is a problem in that the IR transmittance changes due to reaction products adhering to the quartz plate 3, resulting in non-uniform temperature and non-uniform formation of the produced film on the substrate 1.
そこで本発明は、ランプ光の透過率を安定化することが
でき、均一な膜の形成ができる気相成長装置を提供する
ことを目的とする。Therefore, an object of the present invention is to provide a vapor phase growth apparatus that can stabilize the transmittance of lamp light and form a uniform film.
上記問題点は、基板を収納したチャンバ内にガスを供給
し、このチャンバの石英透過窓を通してランプ加熱する
気相成長装置において、前記チャンバ内に、多数の吹出
口を有するリング状のガス供給部を配設し、前記ガス供
給部は、前記基板側に反応ガスを吹き出す第１のガス供
給管と、前記石英透過窓側に反応しないガスを吹き出す
第２のガス供給管とを有することを特徴とする気相成長
装置によって解決される。The above problem is solved by a gas phase growth apparatus that supplies gas into a chamber containing a substrate and heats it with a lamp through a quartz transmission window in the chamber. The gas supply section is characterized in that it has a first gas supply pipe that blows out a reactive gas toward the substrate, and a second gas supply pipe that blows out a non-reactive gas toward the quartz transmission window. This problem can be solved by using a vapor phase growth device.
本発明では、気相成長装置のチャンバ内に、多数の吸出
口を有するリング状のガス供給部を配設しているため、
このガス供給部により少なくとも反応ガスを基板側に向
けて吹き出すようにすることができ、これにより石英板
にガスの反応生成物が付着しにくくなり、ゴミの原因と
なったり透過率が変化することが防止され、基板上に均
一な生成膜を形成することができる。In the present invention, since a ring-shaped gas supply section having a large number of suction ports is disposed in the chamber of the vapor phase growth apparatus,
This gas supply section allows at least the reaction gas to be blown out toward the substrate, which makes it difficult for gas reaction products to adhere to the quartz plate, causing dust or changing the transmittance. This prevents the formation of a uniform film on the substrate.
以下、図面を参照して本発明の実施例を具体的に説明す
る。Embodiments of the present invention will be specifically described below with reference to the drawings.
第１図は本発明の一実施例に係わるランプ加熱方式によ
るＣＶＤ装置の断面図、第２図は第１図の装置のガス供
給部の平面図、第３図は第２図のＡ部分の拡大図で、こ
れらの図において、ＣＶＤ装置は基板１１を水平に載置
して収納するチャンバ１２を有し、そのチャンバ１２の
上部は開口され、その開口部に外側より円形で１０ｍｍ
程度の厚さの石英板１３がシール材１４を介して当接し
石英透過窓１５を形成している。この石英透過窓１５の
上部にはＩＲクランプ６が配置されている。チャンバ１
２下部にはガス排気口１７が設けられている。FIG. 1 is a sectional view of a CVD apparatus using a lamp heating method according to an embodiment of the present invention, FIG. 2 is a plan view of the gas supply section of the apparatus of FIG. 1, and FIG. These are enlarged views. In these figures, the CVD apparatus has a chamber 12 in which a substrate 11 is horizontally placed and housed.
A quartz plate 13 having a certain thickness is brought into contact with a sealing material 14 to form a quartz transparent window 15. An IR clamp 6 is placed above the quartz transmission window 15. chamber 1
A gas exhaust port 17 is provided at the bottom of 2.
一方、チャンバ１２内の基板１１と石英透過窓１５との
間には、第１及び第２のガス供給管１８．１９が配設さ
れている。これら第１及び第２のガス供給管１８、１９
は、石英等の材料からなる円形（リング状）に形成され
た円管部１８ａ、１９ａと、該円管部１８ａ、１９ａの
外周をほぼ４等分した位置においてガス供給口を有する
Ｙ字状に形成された供給管部１８ｂ、 １８ｂ。On the other hand, first and second gas supply pipes 18 and 19 are arranged between the substrate 11 and the quartz transmission window 15 in the chamber 12. These first and second gas supply pipes 18, 19
is a Y-shaped pipe having circular pipe parts 18a and 19a formed in a circular shape (ring shape) made of a material such as quartz, and a gas supply port at a position where the outer periphery of the circular pipe parts 18a and 19a is divided into approximately four equal parts. Supply pipe portions 18b, 18b formed in.
１９ｂ、１９ｂとから形成されている。上記円管部１８
ａ。19b, 19b. Said circular tube part 18
a.
１９ａには、ガス供給口に対向する部分を除いて、それ
ぞれ多数の小孔からなる吹出口１８ｃ、・・・・、１９
ｃ。19a has air outlets 18c, . . . , 19 each consisting of a large number of small holes, except for the portion facing the gas supply port.
c.
・・・・が形成され、一方（第１のガス供給管１８）の
吹出口１８ｃ、・・・・は基板ｌｌ側にガスが吹き出す
よう形成され、他方（第２のガス供給管１９）の吹出口
１９ｃ、・・・・は石英板１３側にガスが吹き出すよう
形成されている。上記第１のガス供給管１８には、例え
ばタングステン薄膜の成長の場合には反応ガスとして畦
、ガスが導入され、他方の第２のガス供給管１９には、
無反応ガスとしてＨ２ガスが導入される。... are formed, one (the first gas supply pipe 18) of the blow-off port 18c, ... is formed so as to blow out the gas toward the substrate ll side, and the other (the second gas supply pipe 19) The blow-off ports 19c, . . . are formed so as to blow gas toward the quartz plate 13 side. For example, in the case of growing a tungsten thin film, gas is introduced into the first gas supply pipe 18 as a reaction gas, and into the other second gas supply pipe 19,
H2 gas is introduced as a non-reactive gas.
上記構成のＣＶＤ装置では、チャンバ１２内に外部から
−Ｆ、ガスが第１のガス供給管１８に導入され、吹出口
１８ｃを通して円形のシャワー状に基板１１側に吹き出
し、他方Ｈ２ガスが第２のガス供給管１９に導入され、
吹出口１９ｃを通して円形のシャワー状に石英板１３側
に吹き出し、ＩＲシラン１６により加熱され、還元反応
で基板１１にタングステン（Ｗ）の薄膜が形成される。In the CVD apparatus with the above configuration, -F gas is introduced into the chamber 12 from the outside into the first gas supply pipe 18, and is blown out to the substrate 11 side in a circular shower shape through the blow-off port 18c, while H2 gas is introduced into the second gas supply pipe 18. is introduced into the gas supply pipe 19 of
It is blown out in a circular shower shape toward the quartz plate 13 through the outlet 19c, heated by the IR silane 16, and a thin film of tungsten (W) is formed on the substrate 11 by a reduction reaction.
このときＩＲクランプ６により石英板１３が加熱されて
も、この石英板１３には無反応ガスとしてＨ２ガスが供
給されているだけであるため、訃、の反応生成物が付着
する機会が少なくなる。At this time, even if the quartz plate 13 is heated by the IR clamp 6, only H2 gas is supplied to the quartz plate 13 as a non-reactive gas, so there is less opportunity for reaction products of the deceased to adhere. .
従って、ゴミ発生の原因となることがな（、また反応生
成物の付着による石英板１３の透過率が変化することが
なくなり温度が一定に保たれ、基板１１表面に均一な膜
を生成することができる。また、第１及び第２のガス供
給管１８．１９は石英で形成されているため、ＩＲクラ
ンプ６の透過に影響を与えない。さらに、円管部１８ａ
、 １９ａには、ガス供給口に対向する部分を除いて吹
出口１８Ｇ、・・・・、 １９ｃ、・・・・が形成され
ているため、供給管部１８ｂ、 １８ｂ、 １９ｂ、
１９ｂから送られるガスが均一に円形シャワー状に吹き
出す。Therefore, no dust is generated (also, the transmittance of the quartz plate 13 does not change due to the adhesion of reaction products, the temperature is kept constant, and a uniform film is formed on the surface of the substrate 11). In addition, since the first and second gas supply pipes 18 and 19 are made of quartz, they do not affect the transmission of the IR clamp 6.Furthermore, the circular pipe portion 18a
, 19a are formed with blow-off ports 18G, . . . , 19c, .
The gas sent from 19b is uniformly blown out in a circular shower shape.
上記実施例ではタングステン（−）の膜を生成している
が、他の膜として、例えば酸化シリコン（Ｓｉ（ｈ）膜
を生成するときには、第１のガス供給管１８にシラン（
ＳｉＨａ）ガスを導入し、第２のガス供給管１９に０□
ガスを導入すればよい。これにより、酸化反応でＳｉ０
ｇ膜が基板１１に生成される。石英板１３には、０□ガ
スが吹き出しているため、反応生成物が直接付着するこ
とがなく上記と同様に作用する。In the above embodiment, a tungsten (-) film is produced, but when producing another film, for example, a silicon oxide (Si(h) film), the first gas supply pipe 18 is filled with silane (
SiHa) gas is introduced into the second gas supply pipe 19 and 0□
Just introduce gas. As a result, the oxidation reaction causes Si0
A g film is produced on the substrate 11. Since the 0□ gas is blown onto the quartz plate 13, the reaction products do not directly adhere to it, and it acts in the same manner as described above.
すなわち、本発明では、少なくとも反応ガスを基板１１
側に向けて吹き出すようにし、無反応ガスは石英板１３
側に向けて吹き出すようにするものである。That is, in the present invention, at least the reactive gas is supplied to the substrate 11.
The non-reactive gas is blown out to the side, and the quartz plate 13
It blows out towards the side.
なお、上記実施例において、円形の円管部１８ａ。In addition, in the above embodiment, the circular tube portion 18a.
１９ａに多数の小孔からなる吹出口１８ｃ、・・・・＋
１９ｃ。Air outlet 18c consisting of a large number of small holes in 19a,...+
19c.
・・・・を形成しているが、少なくとも基板１１側また
は石英板１３側に円状に多数の吹出口を有するガス供給
部であればよく、実施例の第１及び第２のガス供給管１
８．１９の形状は上記したものに限定されない。. . . However, it is sufficient that the gas supply section has a large number of circular outlets at least on the substrate 11 side or the quartz plate 13 side, and the first and second gas supply pipes of the embodiment 1
The shape of 8.19 is not limited to those described above.
また、上記の実施例では、２つのガス供給管１８゜１９
でガスを供給しているが、生成膜の種類に応じては多数
のガス供給管を用いることができるものである。In addition, in the above embodiment, two gas supply pipes 18°19
However, depending on the type of film to be produced, a large number of gas supply pipes can be used.
以上のように本発明によれば、チャンバ内に、円状に多
数の吹出口を有するガス供給部を配設するようにしてい
るため、少なくとも反応ガスを基板側に向けて吹き出す
ようにでき、石英板にガスの反応生成物が付着しにくく
なり、ゴミの原因となったり透過率が変化することがな
くなり、基板に均一な生成膜が形成できるようになる。As described above, according to the present invention, since the gas supply section having a large number of circular blow-off ports is arranged in the chamber, at least the reaction gas can be blown out toward the substrate side. Gas reaction products are less likely to adhere to the quartz plate, causing no dust or changing transmittance, and making it possible to form a uniform film on the substrate.
第１図は本発明実施例のＣＶＤ装置の断面図、第２図は
第１図のガス供給部の平面図、第３図は第２図のＡ部分
の拡大図、
第４図は従来のＣＶＯ装置の断面図
である。
図中、
１１は基板、
１２はチャンバ、
１３は石英板、
１４はシール材、
１５は石英透過窓、
１６はＩＲクランプ
１７はガス排気口、
１８．１９は第１及び第２のガス供給管、１８ａ 、
１９ａは円管部、
１８ｂ 、１９ｂは供給管部、
１８ｃ 、 １９ｃは小孔
を示す。
ＩＲう〉７１６
本洲陳ハ実ｍ仔りのＣＶＯ徳ｌの断１旧２第１図
％１品の力゛スイ共給部の平面図
第２図
葛２図のＡ部非の花火図Fig. 1 is a sectional view of the CVD apparatus according to the embodiment of the present invention, Fig. 2 is a plan view of the gas supply section of Fig. 1, Fig. 3 is an enlarged view of part A in Fig. 2, and Fig. 4 is a conventional FIG. 2 is a cross-sectional view of a CVO device. In the figure, 11 is a substrate, 12 is a chamber, 13 is a quartz plate, 14 is a sealing material, 15 is a quartz transmission window, 16 is an IR clamp 17 is a gas exhaust port, 18 and 19 are first and second gas supply pipes , 18a,
19a is a circular tube part, 18b and 19b are supply pipe parts, and 18c and 19c are small holes. IR〉716 Motoshu Chen's fruit and child's CVO virtue l section 1 old 2 Figure 1 % 1 product power Sui plan view of common supply section Figure 2 Katsu 2 Figure A section non-fireworks diagram
Claims (1)
供給し、このチャンバ（１２）の石英透過窓（１５）を
通してランプ加熱する気相成長装置において、 前記チャンバ（１２）内に、多数の吹出口を有するリン
グ状のガス供給部を配設し、 前記ガス供給部は、前記基板（１１）側に反応ガスを吹
き出す第１のガス供給管（１８）と、前記石英透過窓（
１５）側に反応しないガスを吹き出す第２のガス供給管
（１９）とを有することを特徴とする気相成長装置。[Scope of Claims] A vapor phase growth apparatus in which a gas is supplied into a chamber (12) containing a substrate (11) and heated with a lamp through a quartz transmission window (15) of this chamber (12), comprising: ) is provided with a ring-shaped gas supply section having a large number of blow-off ports; Quartz transparent window (
15) A vapor phase growth apparatus characterized by having a second gas supply pipe (19) for blowing out a non-reactive gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31848187A JPH01161719A (en) | 1987-12-18 | 1987-12-18 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31848187A JPH01161719A (en) | 1987-12-18 | 1987-12-18 | Vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01161719A true JPH01161719A (en) | 1989-06-26 |
Family
ID=18099594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31848187A Pending JPH01161719A (en) | 1987-12-18 | 1987-12-18 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01161719A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5503678A (en) * | 1993-11-04 | 1996-04-02 | Nec Corporation | Vertical low pressure CVD apparatus with an adjustable nozzle |
| FR2816519A1 (en) * | 2000-11-15 | 2002-05-17 | Joint Industrial Processors For Electronics | Device for injecting gas into a reactor providing multi-zone injection without masking the radiation directed on a substrate from electromagnetic radiation lamps |
-
1987
- 1987-12-18 JP JP31848187A patent/JPH01161719A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5503678A (en) * | 1993-11-04 | 1996-04-02 | Nec Corporation | Vertical low pressure CVD apparatus with an adjustable nozzle |
| FR2816519A1 (en) * | 2000-11-15 | 2002-05-17 | Joint Industrial Processors For Electronics | Device for injecting gas into a reactor providing multi-zone injection without masking the radiation directed on a substrate from electromagnetic radiation lamps |
| WO2002040741A1 (en) * | 2000-11-15 | 2002-05-23 | Joint Industrial Processors For Electronics | Gas injection device and treatment furnace equipped with same |
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