JPH0116019B2 - - Google Patents

Info

Publication number
JPH0116019B2
JPH0116019B2 JP56026964A JP2696481A JPH0116019B2 JP H0116019 B2 JPH0116019 B2 JP H0116019B2 JP 56026964 A JP56026964 A JP 56026964A JP 2696481 A JP2696481 A JP 2696481A JP H0116019 B2 JPH0116019 B2 JP H0116019B2
Authority
JP
Japan
Prior art keywords
current amplification
amplification rate
heat treatment
transistor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56026964A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57141958A (en
Inventor
Kazuo Hagimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56026964A priority Critical patent/JPS57141958A/ja
Publication of JPS57141958A publication Critical patent/JPS57141958A/ja
Publication of JPH0116019B2 publication Critical patent/JPH0116019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56026964A 1981-02-27 1981-02-27 Manufacture of lateral type transistor Granted JPS57141958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56026964A JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56026964A JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Publications (2)

Publication Number Publication Date
JPS57141958A JPS57141958A (en) 1982-09-02
JPH0116019B2 true JPH0116019B2 (enrdf_load_stackoverflow) 1989-03-22

Family

ID=12207834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56026964A Granted JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Country Status (1)

Country Link
JP (1) JPS57141958A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817668A (ja) * 1981-07-23 1983-02-01 Nippon Denso Co Ltd 半導体装置の製造方法
JP2693566B2 (ja) * 1989-04-13 1997-12-24 関西電力株式会社 パルス発生装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312156B2 (enrdf_load_stackoverflow) * 1971-09-27 1978-04-27
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5617062A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS57141958A (en) 1982-09-02

Similar Documents

Publication Publication Date Title
US3611067A (en) Complementary npn/pnp structure for monolithic integrated circuits
US3933540A (en) Method of manufacturing semiconductor device
US5198692A (en) Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions
US3484309A (en) Semiconductor device with a portion having a varying lateral resistivity
KR940008566B1 (ko) 반도체장치의 제조방법
US3730786A (en) Performance matched complementary pair transistors
US3713908A (en) Method of fabricating lateral transistors and complementary transistors
US4755487A (en) Method for making bipolar transistors using rapid thermal annealing
US3575742A (en) Method of making a semiconductor device
JPH0116019B2 (enrdf_load_stackoverflow)
US3988759A (en) Thermally balanced PN junction
US4058825A (en) Complementary transistor structure having two epitaxial layers and method of manufacturing same
JP3209443B2 (ja) バイポーラトランジスタの製造方法
US3959810A (en) Method for manufacturing a semiconductor device and the same
JPH0477459B2 (enrdf_load_stackoverflow)
JPS5850411B2 (ja) 不純物拡散法
JPH05326857A (ja) 半導体装置の製造方法
JP2007242650A (ja) 縦型バイポーラトランジスタおよびその製造方法
JPH022287B2 (enrdf_load_stackoverflow)
JPS608624B2 (ja) 半導体装置の製造方法
JPH0650740B2 (ja) 半導体装置
JP2004273772A (ja) 半導体装置の製造方法
JPH0332027A (ja) 半導体装置の製造方法
JPH0845953A (ja) 半導体装置
JPH0138378B2 (enrdf_load_stackoverflow)