JPH01153367U - - Google Patents

Info

Publication number
JPH01153367U
JPH01153367U JP5039688U JP5039688U JPH01153367U JP H01153367 U JPH01153367 U JP H01153367U JP 5039688 U JP5039688 U JP 5039688U JP 5039688 U JP5039688 U JP 5039688U JP H01153367 U JPH01153367 U JP H01153367U
Authority
JP
Japan
Prior art keywords
shutter
wafer
molecular beam
beam epitaxy
showing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5039688U
Other languages
English (en)
Japanese (ja)
Other versions
JPH077329Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988050396U priority Critical patent/JPH077329Y2/ja
Publication of JPH01153367U publication Critical patent/JPH01153367U/ja
Application granted granted Critical
Publication of JPH077329Y2 publication Critical patent/JPH077329Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP1988050396U 1988-04-13 1988-04-13 分子線エピタキシー装置 Expired - Lifetime JPH077329Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988050396U JPH077329Y2 (ja) 1988-04-13 1988-04-13 分子線エピタキシー装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988050396U JPH077329Y2 (ja) 1988-04-13 1988-04-13 分子線エピタキシー装置

Publications (2)

Publication Number Publication Date
JPH01153367U true JPH01153367U (enExample) 1989-10-23
JPH077329Y2 JPH077329Y2 (ja) 1995-02-22

Family

ID=31276448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988050396U Expired - Lifetime JPH077329Y2 (ja) 1988-04-13 1988-04-13 分子線エピタキシー装置

Country Status (1)

Country Link
JP (1) JPH077329Y2 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116511A (ja) * 1984-07-03 1986-01-24 Nec Corp 分子線結晶成長装置
JPS61121322A (ja) * 1984-11-19 1986-06-09 Hitachi Ltd 薄膜形成装置
JPH01138194A (ja) * 1987-11-20 1989-05-31 Matsushita Electric Ind Co Ltd 分子線エピタキシャル成長装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116511A (ja) * 1984-07-03 1986-01-24 Nec Corp 分子線結晶成長装置
JPS61121322A (ja) * 1984-11-19 1986-06-09 Hitachi Ltd 薄膜形成装置
JPH01138194A (ja) * 1987-11-20 1989-05-31 Matsushita Electric Ind Co Ltd 分子線エピタキシャル成長装置

Also Published As

Publication number Publication date
JPH077329Y2 (ja) 1995-02-22

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