JPH01149379A - Lead mounting mechanism for ceramic base substance - Google Patents

Lead mounting mechanism for ceramic base substance

Info

Publication number
JPH01149379A
JPH01149379A JP62308090A JP30809087A JPH01149379A JP H01149379 A JPH01149379 A JP H01149379A JP 62308090 A JP62308090 A JP 62308090A JP 30809087 A JP30809087 A JP 30809087A JP H01149379 A JPH01149379 A JP H01149379A
Authority
JP
Japan
Prior art keywords
ceramic substrate
lead
terminal
thermal expansion
ceramic base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62308090A
Other languages
Japanese (ja)
Other versions
JP2587014B2 (en
Inventor
Yukiharu Takeuchi
之治 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP62308090A priority Critical patent/JP2587014B2/en
Publication of JPH01149379A publication Critical patent/JPH01149379A/en
Application granted granted Critical
Publication of JP2587014B2 publication Critical patent/JP2587014B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3421Leaded components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof

Landscapes

  • Multi-Conductor Connections (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

PURPOSE:To see that cracks do not occur in a ceramic base substance by arranging the constitution that the major part of a solder material may be replaced with a member which exists inside the solder material and has a thermal expansion coefficient smaller than that of the solder material. CONSTITUTION:The major part of a solder material 4 to solder a lead 3 terminal directly to the terminal 2 of a circuit pattern on the surface of a ceramic base substance 1 is replaced with a member which is put between the lead 2 lower end and the terminal 2 inside the solder material 4 and is smaller in thermal expansion coefficient than the solder material 4 and has the same outside diameter as that of the terminal 2 or a little smaller outside diameter than that outside diameter. Accordingly, when soldered to the terminal 2, the shrinkage stress which acts directly on the ceramic base substance, of the solder material 4 which cools and solidifies at the surface of the ceramic base substance 1 can be sharply weakened. Hereby, it can be soldered without causing cracks in the ceramic base substance 1.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、セラミックパッケージ、セラミック基板等の
セラミック基体表面の回路パターンのターミナルにリー
ド端部を銀ろう等のろう材を用いてろう付け接続する際
のリード取り付け構造に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention connects lead ends to terminals of circuit patterns on the surface of ceramic substrates such as ceramic packages and ceramic substrates by brazing using a brazing material such as silver solder. Regarding the lead attachment structure when

[従来の技術] 第3図に示したように、半導体素子等の電子部品を収容
、搭載するセラミックパッケージ、セラミック基板等の
セラミック基体1表面のメタライズ層等からなる回路パ
ターンのターミナル2には、該回路パターンのターミナ
ル2と外部装置の電気回路とを電気的に接続する42ア
ロイ(鉄−ニッケル合金)、コバール(鉄−ニッケルー
コバルト合金)等の金属製のリード3端部を銀ろう等の
ろう材4を用いて接続する。
[Prior Art] As shown in FIG. 3, a terminal 2 of a circuit pattern consisting of a metallized layer on the surface of a ceramic substrate 1 such as a ceramic package or a ceramic substrate that houses and mounts electronic components such as semiconductor elements, The ends of the metal leads 3 made of 42 alloy (iron-nickel alloy), Kovar (iron-nickel-cobalt alloy), etc., which electrically connect the terminal 2 of the circuit pattern and the electric circuit of the external device, are soldered with silver solder, etc. Connect using brazing material 4.

ところで、近時、上記セラミック基体iに収容、搭載す
るシリコンチップからなる半導体素子の高集積化が一段
と進んで、該素子が大きくなるにつれて、セラミック基
体lと該基体に収容、搭載する半導体素子との熱膨張率
の差により半導体素子が破壊する等、セラミック基体l
と半導体素子との熱膨張率の差に基づく半導体素子への
悪影響が問題となってきた。
Incidentally, in recent years, as the integration of semiconductor elements made of silicon chips housed and mounted on the ceramic base i has progressed further, and as the size of these elements has increased, the difference between the ceramic base l and the semiconductor elements housed and mounted on the base has increased. Ceramic substrate l
Adverse effects on semiconductor devices due to the difference in coefficient of thermal expansion between semiconductor devices and semiconductor devices have become a problem.

そこで、上記セラミック基体Iと半導体素子との熱膨張
率の差に基づく半導体素子への悪影響を除去するために
、近時は、通常の高温焼成により形成される熱膨張率の
大きいアルミナセラミック基体に代わって、熱膨張率が
3xto−@/℃のシリコンチップからなる半導体素子
の熱膨張率に近い、熱膨張率の小さい低温焼成により形
成されるセラミック基体、ムライトセラミック基体等の
セラミック基体(以下、単に熱膨張率の小さいセラミッ
ク基体という。)が開発され、該基体を用いた半導体装
置が実用化されつつある。
Therefore, in order to eliminate the adverse effect on semiconductor elements due to the difference in thermal expansion coefficient between the ceramic substrate I and the semiconductor element, recently, alumina ceramic substrates with a large thermal expansion coefficient formed by ordinary high temperature firing have been used. Instead, ceramic substrates (hereinafter referred to as A ceramic substrate (simply referred to as a ceramic substrate with a small coefficient of thermal expansion) has been developed, and semiconductor devices using this substrate are being put into practical use.

[発明が解決しようとする問題点] しかしながら、上記低温焼成により形成されるセラミッ
ク基体、ムライトセラミック基体等の熱膨張率の小さい
セラミック基体は、通常の高温焼成により形成されるア
ルミナセラミック基体に比べて、脆弱である。
[Problems to be Solved by the Invention] However, ceramic substrates with a small coefficient of thermal expansion, such as ceramic substrates and mullite ceramic substrates formed by low-temperature firing, have a lower thermal expansion coefficient than alumina ceramic substrates formed by ordinary high-temperature firing. , vulnerable.

即ち、通常の高温焼成により形成されるアルミナセラミ
ック基体は、その抗折力が30〜40kg/cm’ある
のに対して、上記熱膨張率の小さいセラミック基体は、
その抗折力が20kg/cm鵞しかない。
That is, an alumina ceramic substrate formed by ordinary high-temperature firing has a transverse rupture strength of 30 to 40 kg/cm', whereas a ceramic substrate with a small coefficient of thermal expansion has a transverse rupture strength of 30 to 40 kg/cm'.
Its transverse rupture strength is only 20kg/cm.

また、上記熱膨張率の小さいセラミック基体の熱膨張率
が4〜7X10−@/℃であるのに対して、銀ろう材の
熱膨張率は18〜20Xl(I@/℃とその熱膨張率が
上記熱膨張率の小さいセラミック基体の熱膨張率の4〜
5倍程度大きい。
In addition, while the thermal expansion coefficient of the ceramic substrate with a small thermal expansion coefficient is 4 to 7X10-@/℃, the thermal expansion coefficient of the silver brazing material is 18 to 20Xl (I@/℃ and its thermal expansion coefficient is 4 to 4 of the thermal expansion coefficient of the ceramic substrate with a small thermal expansion coefficient.
About 5 times larger.

そのため、上記熱膨張率の小さいセラミック基体表面の
メタライズ層等からなる回路パターンのターミナル2に
、第3図に示したように、リード3端部を銀ろう等のろ
う材4を用いてろう付け接続した際には、熱膨張率の小
さいセラミック基体lに対して、熱膨張率の大きい銀ろ
う等のろう材4が上記脆弱な熱膨張率の小さいセラミッ
ク基体1表面で大きく収縮しながら冷却固化することと
なって、該熱膨張率の小さいセラミック基体1に上記冷
却固化しつつある銀ろう等のろう材4の大きい収縮応力
が掛かり、該応力で上記熱膨張率の小さいセラミック基
体lにクラックが生じて、該基体Iの気密性が損なわれ
るとともに、セラミック基体1表面のメタライズ層等か
らなる回路パターンのターミナル2にろう付け接続した
リード3端部の接続強度が不安定となる等した。
Therefore, as shown in FIG. 3, the ends of the leads 3 are brazed to the terminals 2 of the circuit pattern made of the metallized layer etc. on the surface of the ceramic substrate with a small coefficient of thermal expansion using a brazing material 4 such as silver solder. When connected, the brazing material 4, such as silver solder, which has a large coefficient of thermal expansion, shrinks greatly on the surface of the fragile ceramic base 1, which has a small coefficient of thermal expansion, and solidifies by cooling. As a result, a large shrinkage stress of the brazing material 4 such as silver solder which is cooling and solidifying is applied to the ceramic base 1 having a small coefficient of thermal expansion, and this stress causes the ceramic base 1 having a low coefficient of thermal expansion to crack. As a result, the airtightness of the substrate I was impaired, and the connection strength of the ends of the leads 3 brazed to the terminals 2 of the circuit pattern made of the metallized layer on the surface of the ceramic substrate 1 became unstable.

本発明は、かかる問題点を解決するためになされたもの
で、その目的は、上記熱膨張率の小さいセラミック基体
1表面の回路パターンのターミナル2に、銀ろう等のろ
う材4を用いてリード3端部を、上記セラミック基体l
にクラックを生じさせずにろう付け接続できる、セラミ
ック基体のリード取り付け構造を提供することにある。
The present invention has been made to solve such problems, and its purpose is to provide leads using a brazing material 4 such as silver solder to the terminals 2 of the circuit pattern on the surface of the ceramic substrate 1 having a small coefficient of thermal expansion. The third end is attached to the ceramic substrate l.
An object of the present invention is to provide a lead attachment structure for a ceramic base that can be connected by brazing without causing cracks.

r問題点を解決するための手段] 上記目的を達成するために、本発明のセラミック基体の
リード取り付け構造は、第1図や第2図にその構成例を
示したように、セラミックパッケージ、セラミック基板
等のセラミック基体1表面の回路パターンのターミナル
2に、リード3端部をろう材4を用いてろう付け接続し
たセラミック基体において、上記リード3下端とターミ
ナル2との間のろう材4内部に、上記ろう材4より熱膨
張率の小さい、上記ターミナル2の外径と同一かまたは
該外径より若干小さい外径を持った部材5を介在させた
ことを特徴とする。
[Means for Solving Problems] In order to achieve the above object, the lead attachment structure of the ceramic base of the present invention, as shown in FIG. 1 and FIG. In a ceramic substrate in which the ends of the leads 3 are brazed and connected to the terminals 2 of the circuit pattern on the surface of the ceramic substrate 1 such as a substrate using the brazing material 4, the brazing material 4 between the lower end of the lead 3 and the terminal 2 is The present invention is characterized in that a member 5 having a coefficient of thermal expansion smaller than that of the brazing filler metal 4 and having an outer diameter that is the same as or slightly smaller than the outer diameter of the terminal 2 is interposed.

本発明の電子部品用基体においては、部材5が、リード
3と別体構造のものと、リード3と一体構造のものとが
考えられる。
In the electronic component substrate of the present invention, the member 5 may be constructed separately from the leads 3 or may be constructed integrally with the leads 3.

[作用] 本発明のセラミック基体のリード取り付け構造において
は、リード3端部をセラミック基体1表面の回路パター
ンのターミナル2に直接にろう付け接続するろう材4の
多くの部分が、該ろう材4内部の上記リード3下端とタ
ーミナル2との間に介在させた、該ろう材4より熱膨張
率の小さい、」二足ターミナル2の外径と同一かまたは
該外径より若干小さい外径を持った部材5に置き換えら
れて、セラミック基体1表面の回路パターンのターミナ
ル2にリード3端部がろう付け接続されることとなる。
[Function] In the ceramic substrate lead attachment structure of the present invention, a large portion of the brazing material 4 that directly connects the ends of the leads 3 to the terminals 2 of the circuit pattern on the surface of the ceramic substrate 1 is connected to the brazing material 4. A wire having a lower coefficient of thermal expansion than the brazing filler metal 4 and having an outer diameter that is the same as or slightly smaller than the outer diameter of the two-legged terminal 2 is interposed between the lower end of the lead 3 and the terminal 2. The ends of the leads 3 are connected to the terminals 2 of the circuit pattern on the surface of the ceramic substrate 1 by brazing.

また、上記ろう材4内部に介在させた部材5の外径を上
記ターミナル2の外径と同一かまたは該外径より若干小
さい大きさとしたため、上記円盤状の部材5周囲とセラ
ミック基体1表面のターミナル2との間に亙ってメニス
カス形状を描いて付着するろう材4の量を極めて少なく
できる。
Furthermore, since the outer diameter of the member 5 interposed inside the brazing filler metal 4 is set to be the same as or slightly smaller than the outer diameter of the terminal 2, the periphery of the disc-shaped member 5 and the surface of the ceramic base 1 are The amount of brazing filler metal 4 that forms a meniscus shape and adheres to the terminal 2 can be extremely reduced.

そのため、リード3端部をセラミック基体1表面の回路
パターンのターミナル2にろう付け接続した際に、セラ
ミック基体1表面で冷却固化するろう材4のセラミック
基体lに直接に掛かる収縮応力を大幅に弱めることがで
きる。
Therefore, when the ends of the leads 3 are brazed and connected to the terminals 2 of the circuit pattern on the surface of the ceramic substrate 1, the shrinkage stress of the brazing filler metal 4 that cools and solidifies on the surface of the ceramic substrate 1 directly applied to the ceramic substrate 1 is greatly weakened. be able to.

さらに、ろう材4内部に介在させた部材5をリード3と
別体構造としたものにあっては、部材5がリード3形成
用の金属素材と同一素材に限定されずに、部材5に、各
種状況に応じた最適な熱膨張率を持った部材を選択でき
る。
Furthermore, in the case where the member 5 interposed inside the brazing filler metal 4 is structured separately from the lead 3, the member 5 is not limited to the same material as the metal material for forming the lead 3; You can select materials with the optimal coefficient of thermal expansion according to various situations.

また、ろう材4内部に介在させた部材5をり−ド3と一
体構造としたものにあっては、リード3と部材5を一体
化して、リード3端部をセラミック基体1表面の回路パ
ターンのターミナル2にろう付け接続する際の部品点数
を減らしたため、手数をかけずにリード3端部を上記タ
ーミナル2にろう材4を用いてろう付け接続できる。
In addition, in the case where the member 5 interposed inside the brazing material 4 is integrated with the lead 3, the lead 3 and the member 5 are integrated, and the ends of the lead 3 are connected to the circuit pattern on the surface of the ceramic substrate 1. Since the number of parts for brazing connection to the terminal 2 is reduced, the end of the lead 3 can be brazed to the terminal 2 using the brazing material 4 without any trouble.

し実施例] 次に、本発明の実施例を図面に従い説明する。Examples] Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明のセラミック基体のリード取り付け構造
の好適な実施例を示し、詳しくは該リード取り付け構造
を用いたムライトセラミック基板の一部破新正面図を示
す。以下、上記図中の実施例を説明する。
FIG. 1 shows a preferred embodiment of the lead attachment structure for a ceramic substrate according to the present invention, and in detail is a partially broken front view of a mullite ceramic substrate using the lead attachment structure. The embodiment shown in the above figure will be described below.

図において、lは、熱膨張率の小さいセラミック基体で
ある、熱膨張率が約4.5xlO−’/℃のムライトセ
ラミック基板である。
In the figure, l is a mullite ceramic substrate having a coefficient of thermal expansion of about 4.5xlO-'/°C, which is a ceramic substrate with a small coefficient of thermal expansion.

このムライトセラミック基板1表面に、該基板l内部や
その表面に備えたタングステンメタライズ層からなる回
路パターン(図示せず。)に一連に連続する、リード3
端部をろう付け接続するタングステンメタライズ層から
なる円形状をした回路パターンのターミナル2を一体に
備えた。
Leads 3 are formed on the surface of this mullite ceramic substrate 1 and are connected in series to a circuit pattern (not shown) made of a tungsten metallized layer provided inside the substrate 1 or on its surface.
It is integrally equipped with a terminal 2 having a circular circuit pattern made of a tungsten metallized layer whose ends are connected by brazing.

そして、上記タングステンメタライズ層からなるターミ
ナル2表面に、無電解めっき法によりニッケルめっき6
を施した。
Then, the surface of the terminal 2 made of the tungsten metallized layer is plated with nickel 6 by electroless plating.
was applied.

そして、このニッケルめっき6を施した上記タングステ
ンメタライズ層からなるターミナル2上面に、第1図に
示したように、後述の銀ろうの熱膨張率より小さいムラ
イトセラミック基板lの熱膨張率に近い熱膨張率を持っ
た、上記銀ろうが的確に密着する、その表面にニッケル
めっき、金めつき等の金属めっきを施したモリブデンか
らなる円盤状の部材5を搭載した。
Then, as shown in FIG. 1, the top surface of the terminal 2 made of the tungsten metallized layer with the nickel plating 6 is heated to a temperature close to the thermal expansion coefficient of the mullite ceramic substrate l, which is smaller than the thermal expansion coefficient of silver solder (described later). A disc-shaped member 5 made of molybdenum having a coefficient of expansion and having a metal plating such as nickel plating or gold plating on the surface to which the silver solder is accurately adhered is mounted.

ここで、上記モリブデンからなる円盤状の部材5は、上
記ムライトセラミック基板1表面の円形状をしたターミ
ナル2の外径と同一かまたは該外径より若干小さな外径
を持った大きさのものとした。
Here, the disk-shaped member 5 made of molybdenum has an outer diameter that is the same as or slightly smaller than the outer diameter of the circular terminal 2 on the surface of the mullite ceramic substrate 1. did.

そして、上記ターミナル2上面に搭載したモリブデンか
らなる部材5上面に、既述のコバールからなる細い円柱
状をしたリード3下端を当接させて、該リード3を上記
部材5上方に起立させた。
Then, the lower end of the thin cylindrical lead 3 made of Kovar mentioned above was brought into contact with the upper surface of the member 5 made of molybdenum mounted on the upper surface of the terminal 2, and the lead 3 was made to stand above the member 5.

そして、上記リード3をモリブデンからなる部材5上方
に起立させた状態で、リード3下部、リード3下端を当
接させたモリブデンからなる部材5、該部材5を搭載し
たタングステンメタライズ層からなるターミナル2、該
ターミナル周辺のムライトセラミック基板lを800℃
前後に予備加熱するとともに、銀ろう4aを加熱して溶
融させた状態にして上記リード3下部周囲、モリブデン
からなる部材5周囲、ムライトセラミック基板1表面の
ターミナル2に亙って付着させた後、該銀ろう4aを上
記リード3下部、モリブデンからなる部材5、ムライト
セラミック基板1表面のターミナル2、該ターミナル周
辺のムライトセラミック基板1とともに冷却して固化さ
せた。
With the lead 3 standing above the member 5 made of molybdenum, the lower part of the lead 3, the member 5 made of molybdenum with which the lower end of the lead 3 is brought into contact, and the terminal 2 made of a tungsten metallized layer on which the member 5 is mounted. , the mullite ceramic substrate around the terminal is heated to 800°C.
After preheating back and forth, the silver solder 4a is heated and molten and adhered around the lower part of the lead 3, around the molybdenum member 5, and over the terminal 2 on the surface of the mullite ceramic substrate 1, The silver solder 4a was cooled and solidified together with the lower part of the lead 3, the member 5 made of molybdenum, the terminal 2 on the surface of the mullite ceramic substrate 1, and the mullite ceramic substrate 1 around the terminal.

第1図に示したムライトセラミック基板のリード取り付
け構造は、以上のように構成した。
The lead attachment structure for the mullite ceramic substrate shown in FIG. 1 was constructed as described above.

第2図は本発明のもう一つのセラミック基体のリード取
り付け構造を示し、詳しくは該リード取り付け構造を用
いたムライトセラミック基板の一部破断正面図を示す。
FIG. 2 shows another lead attachment structure for a ceramic substrate according to the present invention, and in detail is a partially cutaway front view of a mullite ceramic substrate using the lead attachment structure.

以下、上記図中の実施例を説明する。第2図において、
既述の第1図に示したムライトセラミック基板と同一部
材には同一符号を付してその説明を省略する。
The embodiment shown in the above figure will be described below. In Figure 2,
The same members as those of the mullite ceramic substrate shown in FIG. 1 described above are given the same reference numerals, and their explanations will be omitted.

第2図には、第1図と同様なその表面に円形状をしたタ
ングステンメタライズ層からなる回路パターンのターミ
ナル2を一体に備え、該ターミナル2表面にニッケルめ
っき6を施したムライトセラミック基板lが示されてい
る。
FIG. 2 shows a mullite ceramic substrate l which is integrally equipped with a terminal 2 having a circuit pattern made of a circular tungsten metallized layer on its surface similar to that shown in FIG. 1, and whose surface is nickel plated 6. It is shown.

このムライトセラミック基板1表面のターミナル2にろ
う付け接続するリード3下端に、該リードと同一素材の
熱膨張率が4〜7X10−@/”Cのムライトセラミッ
ク基板lに近い熱膨張率を持った後述の銀ろうが的確に
密着する既述のコバールまたは42アロイからなる薄い
円盤状をした部材5を一体に突設し、該リード3下端に
突設した部材5を上記ムライトセラミック基板1表面の
ターミナル2上面に当接させて、リード3を上記ターミ
ナル2上方に起立させた。
The lower end of the lead 3 which is brazed and connected to the terminal 2 on the surface of the mullite ceramic substrate 1 is made of the same material as the lead and has a coefficient of thermal expansion close to that of the mullite ceramic substrate l, which has a coefficient of thermal expansion of 4 to 7X10-@/''C. A thin disk-shaped member 5 made of the aforementioned Kovar or 42 alloy to which silver solder (described later) is adhered accurately is integrally provided, and the member 5 protruding from the lower end of the lead 3 is attached to the surface of the mullite ceramic substrate 1. The lead 3 was brought into contact with the upper surface of the terminal 2 and erected above the terminal 2.

ここで、上記リード3下端に一体に突設した薄い円盤状
をした部材5は、その外径を上記ムライトセラミック基
板1表面の円形状をしたターミナル2の外径と同一かま
たは該外径より若干率さな大きさのものとした。
Here, the thin disk-shaped member 5 integrally provided at the lower end of the lead 3 has an outer diameter that is the same as or greater than the outer diameter of the circular terminal 2 on the surface of the mullite ceramic substrate 1. It was made a little smaller in size.

そして、上記リード3をターミナル2上方に起立させた
状態で、リード3下端の円盤状の部材5、該部材5を当
接させたターミナル2、該ターミナル周辺のムライトセ
ラミック基板lを800℃前後に予備加熱するとともに
、銀ろう4aを加熱して溶融させた状態にして上記リー
ド3下部、り一ド3下端の部材5、ムライトセラミック
基板1表面のターミナル2に亙って付着させた後、該銀
ろう4aを上記リード3下部、リード3下端の部材5、
ムライトセラミック基板1表面のターミナル2、該ター
ミナル周辺のムライトセラミック基板1とともに冷却し
て固化させた。
Then, with the lead 3 standing above the terminal 2, the disc-shaped member 5 at the lower end of the lead 3, the terminal 2 in contact with the member 5, and the mullite ceramic substrate l around the terminal are heated to around 800°C. At the same time as preheating, the silver solder 4a is heated and melted and applied to the lower part of the lead 3, the member 5 at the lower end of the lead 3, and the terminal 2 on the surface of the mullite ceramic substrate 1. Silver solder 4a is attached to the lower part of the lead 3, the member 5 at the lower end of the lead 3,
The terminal 2 on the surface of the mullite ceramic substrate 1 and the mullite ceramic substrate 1 around the terminal were cooled and solidified.

第2図に示したムライトセラミック基板のリード取り付
け構造は、以上のように構成した。
The lead attachment structure for the mullite ceramic substrate shown in FIG. 2 was constructed as described above.

次に、上述各実施例の作用を説明する。Next, the operation of each of the above-mentioned embodiments will be explained.

上述各実施例のリード取り付け構造においては、リード
3端部をムライトセラミック基板1表面のターミナル2
に直接にろう付け接続する銀ろう4aの多くの部分が、
該銀ろう4a内部の上記り−ド3下端とターミナル2と
の間に介在させた、該銀ろう4aの熱膨張率より小さい
、ムライトセラミック基板lに近い熱膨張率を持った、
その外径が上記円形状をしたターミナル2の外径と同一
かまたは該外径より若干率さい、リード3と別体構造を
したその表面に金属めっきを施したモリブデンからなる
円盤状の部材5、またはリード3と一体構造をしたリー
ド3と同一素材の4270イからなるリード3下端の円
盤状の部材5に置き換えられて、ムライトセラミック基
板1表面のターミナル2にリード3端部がろう付け接続
されることとなる。
In the lead attachment structure of each of the above embodiments, the ends of the leads 3 are attached to the terminals 2 on the surface of the mullite ceramic substrate 1.
Many parts of the silver solder 4a that are directly soldered to the
Interposed between the lower end of the board 3 and the terminal 2 inside the silver solder 4a, it has a coefficient of thermal expansion smaller than that of the silver solder 4a and close to that of the mullite ceramic substrate l;
A disc-shaped member 5 made of molybdenum whose outer diameter is the same as or slightly larger than the outer diameter of the circular terminal 2, and whose surface is metal-plated and has a separate structure from the lead 3. , or is replaced with a disc-shaped member 5 at the lower end of the lead 3 made of 4270I, which is the same material as the lead 3 and has an integral structure, and the end of the lead 3 is brazed and connected to the terminal 2 on the surface of the mullite ceramic substrate 1. It will be done.

また、上記銀ろう4a内部に介在させたモリブデンから
なる円盤状の部材5またはり−ド3と同一素材の42ア
ロイからなる円盤状の部材5の外径を、ムライトセラミ
ック基板1表面の円形状をしたターミナル2の外径と同
一かまたは該外径より若干率さな大きさとしたため、第
1図や第2図に示したように、リード3端部を上記円盤
状の部材5を介してムライトセラミック基板1表面のタ
ーミナル2にろう付け接続する銀ろう4aのうちの、上
記円盤状の部材5周囲とムライトセラミック基板1表面
のターミナル2との間に亙ってメニスカス形状を描いて
付着する銀ろう4aの量を極めて少なくできる。
In addition, the outer diameter of the disc-shaped member 5 made of molybdenum interposed inside the silver solder 4a or the disc-shaped member 5 made of 42 alloy made of the same material as the board 3 is determined by the circular shape of the surface of the mullite ceramic substrate 1. Since the outer diameter of the terminal 2 is the same as or slightly smaller than the outer diameter of the terminal 2, the end of the lead 3 is inserted through the disc-shaped member 5 as shown in FIGS. Of the silver solder 4a to be brazed and connected to the terminal 2 on the surface of the mullite ceramic substrate 1, it is attached in a meniscus shape between the periphery of the disk-shaped member 5 and the terminal 2 on the surface of the mullite ceramic substrate 1. The amount of silver solder 4a can be extremely reduced.

そのため、ムライトセラミック基板1表面のターミナル
2上面に直接に付着する銀ろう4aの大部分が上記円盤
状の部材5で置き換えられることとなって、銀ろう4a
を用いてリード3端部をムライトセラミック基板1表面
のターミナル2(ころう付け接続した際に、ムライトセ
ラミック基板1表面で冷却固化する上記銀ろう4aのム
ライトセラミック基板lに掛かる収縮応力を大幅に弱め
ることができる。
Therefore, most of the silver solder 4a directly attached to the upper surface of the terminal 2 on the surface of the mullite ceramic substrate 1 is replaced with the disc-shaped member 5, and the silver solder 4a is replaced with the disc-shaped member 5.
When connecting the ends of the leads 3 to the terminals 2 on the surface of the mullite ceramic substrate 1 by using the It can be weakened.

また、ろう材4内部に該ろう材が的確に密着する部材5
を介在させたため、リード3端部をムライトセラミック
基板1表面のターミナル2にろう付け接続したろう材4
の接続強度が、ろう材4内部に介在させた上記部材5に
より大幅に弱められることがない。
In addition, a member 5 with which the brazing filler metal is tightly adhered to the inside of the brazing filler metal 4 is also provided.
As a result, the ends of the leads 3 are brazed and connected to the terminals 2 on the surface of the mullite ceramic substrate 1.
The connection strength is not significantly weakened by the member 5 interposed inside the brazing filler metal 4.

さらに、第1図に示したような、銀ろう4a内部に介在
させた部材5をリード3と別体構造としたものにあって
は、部材5に、各種状況に応じた最適な熱膨張率を持っ
た部材5を選択できる。
Furthermore, in the case where the member 5 interposed inside the silver solder 4a has a separate structure from the lead 3 as shown in FIG. You can select the member 5 that has .

また、第2図に示したような、銀ろう4a内部に介在さ
せた部材5をリード3と一体構造をしたものにあっては
、手数をかけずにリード3端部をムライトセラミック基
板1表面のターミナル2に銀ろう4aを用いてろう付け
接続できる。
In addition, in the case where the member 5 interposed inside the silver solder 4a is integrated with the lead 3 as shown in FIG. 2, the end of the lead 3 can be easily connected to the surface of the mullite ceramic substrate 1. It can be connected by brazing to the terminal 2 of the terminal 2 using silver solder 4a.

実験結果によれば、上述各実施例のリード取り付け構造
によりリード3端部をムライトセラミック基板1表面の
タングステンメタライズ層からなる回路パターンのター
ミナル2に銀ろう4aを用いてろう付け接続したところ
、ムライトセラミック基板lに、該基板lの気密性を損
ねたり、該基板1表面の上記ターミナル2にろう付け接
続したリード3端部の接続強度を不安定とする、クラッ
クが生じないことが確認された。
According to the experimental results, when the lead 3 ends were brazed and connected to the terminal 2 of the circuit pattern made of the tungsten metallized layer on the surface of the mullite ceramic substrate 1 using silver solder 4a using the lead attachment structure of each of the above-mentioned examples, the mullite It was confirmed that no cracks were formed on the ceramic substrate 1 that would impair the airtightness of the substrate 1 or destabilize the connection strength of the ends of the leads 3 brazed to the terminal 2 on the surface of the substrate 1. .

また、上述各実施例のリード取り付け構造によりリード
3端部をムライトセラミック基板1表面のターミナル2
に銀ろう4aを用いてろう付け接続したリード3の引張
り強度を測定したところ、6kg以上あり、該リード3
の上記ターミナル2に対する接続強度が実用上十分ある
ことが確認された。
Furthermore, with the lead attachment structure of each of the above embodiments, the ends of the leads 3 can be connected to the terminals 2 on the surface of the mullite ceramic substrate 1.
When the tensile strength of the lead 3, which was connected by brazing using silver solder 4a, was measured, it was found to be over 6 kg.
It was confirmed that the connection strength to the terminal 2 was sufficient for practical use.

なお、上述各実施例において、ろう材4に銀と銅の共晶
ろう、金ゲルマニウムろう等を用いたり、セラミック基
板lに低温焼成アルミナセラミック基板を用いたり、リ
ード3をろう付け接続する回路パターンのターミナル2
に表面にめっきを施さない銀メタライズ層等からなるタ
ーミナル2を用いたりしても良く、上述各実施例とほぼ
同様な作用、効果のあるリード取り付け構造が得られる
In each of the above-mentioned embodiments, a silver-copper eutectic solder, a gold-germanium solder, or the like is used as the brazing material 4, a low-temperature fired alumina ceramic substrate is used as the ceramic substrate 1, and the circuit pattern in which the leads 3 are connected by brazing is used. terminal 2 of
Alternatively, a terminal 2 made of a silver metallized layer or the like whose surface is not plated may be used, and a lead attachment structure having substantially the same functions and effects as those of the above-mentioned embodiments can be obtained.

また、銀ろう等のろう材4内部に介在させる部材5は、
ろう材4より熱膨張率の小さい上述金属部材のタングス
テン、酸化チタン等の外に、ろう材4より熱膨張率の小
さいその表面を金属化したろう材4が的確に密着する無
機部材を用いて(良く、上述各実施例と同様な作用、効
果のあるリード取り付け構造が得られる。
Moreover, the member 5 interposed inside the brazing material 4 such as silver solder is
In addition to the above-mentioned metal members such as tungsten and titanium oxide, which have a coefficient of thermal expansion smaller than that of the brazing filler metal 4, an inorganic member whose surface is metallized and which has a coefficient of thermal expansion smaller than that of the brazing filler metal 4, to which the brazing filler metal 4 adheres precisely, is used. (It is possible to obtain a lead attachment structure that has the same functions and effects as those of the above-mentioned embodiments.

さらに、ろう材4内部に介在させる該ろう材より熱膨張
率の小さい部材5は、セラミック基板lに近い熱膨張率
を持った部材5が最適であるが、場合によっては、セラ
ミック基体lより小さい零に近い熱膨張率を持った部材
5でも良く、該部材5を上記ろう材4内部に介在させる
ことにより、ろう材4が冷却固化する際の収縮応力を上
記部材5で減殺して、ろう材4の冷却固化する際のセラ
ミック基体lに掛かる収縮応力を大幅に弱めることがで
きる。
Furthermore, the member 5 having a coefficient of thermal expansion smaller than that of the brazing filler metal to be interposed inside the brazing filler metal 4 is optimally a member 5 having a coefficient of thermal expansion close to that of the ceramic substrate l; The member 5 having a coefficient of thermal expansion close to zero may be used, and by interposing the member 5 inside the brazing filler metal 4, the shrinkage stress when the brazing filler metal 4 is cooled and solidified is reduced by the member 5, and the solder The shrinkage stress applied to the ceramic substrate 1 when the material 4 is cooled and solidified can be significantly weakened.

また、セラミック基板lに、アルミナセラミック基板よ
りも強靭なものの、ろう材4との熱膨張率の差がアルミ
ナセラミック基板よりも大きな、窒化アルミニウム基板
を用いたセラミック基板1表面の回路パターンのターミ
ナル2にリード3をろう付け接続した際にも、該窒化ア
ルミニウム基板にろう材4との熱膨張率の差によるクラ
ックが発生する場合があり、このような窒化アルミニウ
ム基板表面の回路パターンのターミナル2にも本発明の
リード取り付け構造を用いてリード3をろう付け接続す
れば、該窒化アルミニウム基板のクラックの発生防止の
有効な解決手段となる。
In addition, the terminal 2 of the circuit pattern on the surface of the ceramic substrate 1 is made of an aluminum nitride substrate, which is stronger than the alumina ceramic substrate but has a larger difference in coefficient of thermal expansion with the brazing filler metal 4 than the alumina ceramic substrate. Even when the leads 3 are brazed and connected to the aluminum nitride substrate, cracks may occur in the aluminum nitride substrate due to the difference in thermal expansion coefficient with the brazing material 4. If the leads 3 are connected by brazing using the lead attachment structure of the present invention, it becomes an effective solution to preventing the occurrence of cracks in the aluminum nitride substrate.

さらに、上述各実施例においては、いずれもセラミック
基体1であるセラミック基板lのリード取り付け構造に
ついて述べたが、脆弱なセラミック基体lであるセラミ
ックパッケージ表面の入出力用の回路パターンのターミ
ナルにリード端部をろう材を用いてろう付け接続する際
のリード取り付け構造に上述各実施例と同様なリード取
り付け構造を用いても良く、そうすれば上述各実施例と
同様な作用、効果が得られることは言うまでもない。
Furthermore, in each of the above-mentioned embodiments, the lead attachment structure of the ceramic substrate 1, which is the ceramic substrate 1, has been described. The same lead attachment structure as in each of the above-mentioned embodiments may be used for the lead attachment structure when the parts are brazed and connected using a brazing material, and in this case, the same functions and effects as in each of the above-mentioned embodiments can be obtained. Needless to say.

[発明の効果コ 以上説明したように、本発明のセラミック基体のリード
取り付け構造においては、セラミック基体表面の回路パ
ターンのターミナルにリード端部を直接にろう付け接続
する銀ろう等のろう材の多くの部分が、上記リード下端
とターミナルとの間のろう柱内部に介在させた、該ろう
材より熱膨張率の小さい、上記ターミナルの外径と同一
かまたは該外径より若干小さい外径を持った部材に置き
換えられることとなる。
[Effects of the Invention] As explained above, in the ceramic substrate lead attachment structure of the present invention, many brazing materials such as silver solder are used to connect the lead ends directly to the terminals of the circuit pattern on the surface of the ceramic substrate. The part is interposed inside the brazing column between the lower end of the lead and the terminal, has a coefficient of thermal expansion smaller than that of the brazing filler metal, and has an outer diameter that is the same as or slightly smaller than the outer diameter of the terminal. It will be replaced with a new member.

また、上記ろう柱内部に介在させた部材の外径を上記タ
ーミナルの外径と同一かまたは該外径より若干小さい大
きさとしたため、上記部材周囲とセラミック基体表面の
ターミナルとの間に亙って付着するろう材の量を極めて
少なくできる。
In addition, since the outer diameter of the member interposed inside the solder pillar is the same as or slightly smaller than the outer diameter of the terminal, the area between the periphery of the member and the terminal on the surface of the ceramic substrate is The amount of brazing filler metal attached can be extremely reduced.

従って、リード端部をセラミック基体表面の回路パター
ンのターミナルにろう付け接続した際に、セラミック基
体表面で冷却固化する銀ろう等のろう材のセラミック基
体に直接に掛かる収縮応力を大幅に弱めることができる
Therefore, when the lead ends are brazed and connected to the terminals of the circuit pattern on the surface of the ceramic substrate, the shrinkage stress directly applied to the ceramic substrate by the brazing material such as silver solder that cools and solidifies on the surface of the ceramic substrate can be significantly weakened. can.

そのため、リード端部をセラミック基体表面の回路パタ
ーンのターミナルにろう付け接続した際に、セラミック
基体にゲラツクが生じて、セラミック基体の気密性が損
なわれたり、セラミック基体表面の回路パターンのター
ミナルとリード端部との接続強度が不安定となることが
ない。
Therefore, when the lead ends are brazed and connected to the terminals of the circuit pattern on the surface of the ceramic substrate, gel may form on the ceramic substrate, which may impair the airtightness of the ceramic substrate, or connect the terminals of the circuit pattern on the surface of the ceramic substrate with the leads. The connection strength with the end portions will not become unstable.

また、ろう柱内部に介在させた部材をリードと別体構造
としたものにあっては、部材に、各種状況に応じた最適
な熱膨張率を持った部材を選択できる。
Further, in the case where the member interposed inside the solder column is constructed separately from the lead, a member having an optimal coefficient of thermal expansion depending on various situations can be selected as the member.

さらに、ろう柱内部に介在させた部材をリードと一体構
造としたものにあっては、手数をかけずにリード端部を
セラミック基体表面のターミナルにろう材を用いてろう
付け接続できる。
Furthermore, if the member interposed inside the solder pillar is integrally structured with the lead, the end of the lead can be brazed to the terminal on the surface of the ceramic substrate using a brazing material without any trouble.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のリード取り付け構造を用いたムライト
セラミック基板の一部破断正面図、第2図は本発明のリ
ード取り付け構造を用いたもう一つのムライトセラミッ
ク基板の一部破断正面図、第3図は従来のリード取り付
け構造を用いたセラミック基体の一部破断正面図である
。 l・・セラミック基体、  2・・ターミナル、3・・
リード、  4・・ろう材、 4a・・銀ろう、  5・・部材。 特許出願人 新光電気工業株式会社
FIG. 1 is a partially cutaway front view of a mullite ceramic substrate using the lead attachment structure of the present invention, and FIG. 2 is a partially cutaway front view of another mullite ceramic substrate using the lead attachment structure of the present invention. FIG. 3 is a partially cutaway front view of a ceramic substrate using a conventional lead attachment structure. l... Ceramic base, 2... Terminal, 3...
Lead, 4. Brazing metal, 4a. Silver solder, 5. Component. Patent applicant Shinko Electric Industry Co., Ltd.

Claims (1)

【特許請求の範囲】 1、セラミックパッケージ、セラミック基板等のセラミ
ック基体表面の回路パターンのターミナルに、リード端
部をろう材を用いてろう付け接続したセラミック基体に
おいて、上記リード下端とターミナルとの間のろう材内
部に、上記ろう材より熱膨張率の小さい、上記ターミナ
ルの外径と同一かまたは該外径より若干小さい外径を持
った部材を介在させたことを特徴とするセラミック基体
のリード取り付け構造。 2、部材が、リードと別体構造のものである特許請求の
範囲第1項記載のセラミック基体のリード取り付け構造
。 3、部材が、リードと一体構造のものである特許請求の
範囲第1項記載のセラミック基体のリード取り付け構造
[Claims] 1. In a ceramic substrate in which a lead end is brazed and connected to a terminal of a circuit pattern on the surface of a ceramic substrate such as a ceramic package or a ceramic substrate using a brazing material, between the lower end of the lead and the terminal. A ceramic-based lead characterized in that a member having an outer diameter equal to or slightly smaller than the outer diameter of the terminal, which has a lower coefficient of thermal expansion than the brazing filler metal, is interposed inside the brazing filler metal. Mounting structure. 2. A lead attachment structure for a ceramic substrate according to claim 1, wherein the member is of a separate structure from the lead. 3. A lead attachment structure for a ceramic substrate according to claim 1, wherein the member is integrally constructed with the lead.
JP62308090A 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate Expired - Lifetime JP2587014B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62308090A JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62308090A JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

Publications (2)

Publication Number Publication Date
JPH01149379A true JPH01149379A (en) 1989-06-12
JP2587014B2 JP2587014B2 (en) 1997-03-05

Family

ID=17976745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62308090A Expired - Lifetime JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100848A (en) * 2000-09-22 2002-04-05 Toshiba Corp Ceramic circuit board with terminal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63116379A (en) * 1986-10-28 1988-05-20 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Connector pin

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63116379A (en) * 1986-10-28 1988-05-20 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Connector pin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100848A (en) * 2000-09-22 2002-04-05 Toshiba Corp Ceramic circuit board with terminal

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