JP2587014B2 - Lead mounting structure of ceramic substrate - Google Patents

Lead mounting structure of ceramic substrate

Info

Publication number
JP2587014B2
JP2587014B2 JP62308090A JP30809087A JP2587014B2 JP 2587014 B2 JP2587014 B2 JP 2587014B2 JP 62308090 A JP62308090 A JP 62308090A JP 30809087 A JP30809087 A JP 30809087A JP 2587014 B2 JP2587014 B2 JP 2587014B2
Authority
JP
Japan
Prior art keywords
base
lead
terminal
brazing material
thermal expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62308090A
Other languages
Japanese (ja)
Other versions
JPH01149379A (en
Inventor
之治 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP62308090A priority Critical patent/JP2587014B2/en
Publication of JPH01149379A publication Critical patent/JPH01149379A/en
Application granted granted Critical
Publication of JP2587014B2 publication Critical patent/JP2587014B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3421Leaded components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof

Landscapes

  • Multi-Conductor Connections (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、セラミックパッケージ、セラミック基体等
のセラミック基体表面の回路パターンのターミナルにリ
ード端部にろう付け接続する際のリード取り付け構造に
関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead mounting structure for connecting a terminal of a circuit pattern on a surface of a ceramic base such as a ceramic package or a ceramic base to a lead end by brazing.

[従来の技術] 従来のリード取り付け構造では、第2図に示したよう
に、セラミック基体1表面のメタライズ等からなる回路
パターンのターミナル2に、該ターミナルと外部装置の
電気回路とを電気的に接続するための42アロイ(鉄−ニ
ッケル合金)、コバール(鉄−ニッケル−コバルト合
金)等からなる金属製の細棒状のリード3端部を銀ろう
等のろう材4を用いて直接にろう付け接続している。
[Prior Art] In a conventional lead mounting structure, as shown in FIG. 2, a terminal 2 of a circuit pattern made of metallization on the surface of a ceramic substrate 1 is electrically connected to a terminal 2 and an electric circuit of an external device. A metal thin rod-shaped lead 3 made of 42 alloy (iron-nickel alloy) or kovar (iron-nickel-cobalt alloy) for connection is directly brazed using a brazing material 4 such as silver brazing. Connected.

ところで、近時は、半導体素子の高集積化が一段と進
んで、セラミック基体1に搭載したり収容したりした半
導体素子が大型化しつつある。それに伴って、半導体素
子とセラミック基体1との熱膨張率の差により、セラミ
ック基体1から大型化した半導体素子に過大な熱応力が
加わって、半導体素子が破損する等の影響が問題化しつ
つある。
By the way, in recent years, the integration of the semiconductor element has been further advanced, and the semiconductor element mounted or housed in the ceramic base 1 has been increasing in size. Along with this, due to the difference in the coefficient of thermal expansion between the semiconductor element and the ceramic base 1, an excessive thermal stress is applied to the semiconductor element which has been increased in size from the ceramic base 1, and the influence of breakage of the semiconductor element is becoming a problem. .

そのため、近時は、セラミック基体1に、通常の高温
焼成により形成される熱膨張率の大きいアルミナセラミ
ックからなる基体に代わって、熱膨張率が3×10-6/℃
のシリコンからなる半導体素子の熱膨張率に近い、熱膨
張率の小さい低温焼成により形成されるムライトセラミ
ック等からなる基体(以下、小熱膨張率の基体という)
が開発され、該基体を用いた半導体装置が実用化されつ
つある。
Therefore, in recent years, the ceramic base 1 has a thermal expansion coefficient of 3 × 10 −6 / ° C. instead of a base made of alumina ceramic having a high thermal expansion coefficient formed by ordinary high-temperature firing.
A base made of mullite ceramic or the like formed by low-temperature baking with a low coefficient of thermal expansion, which is close to the coefficient of thermal expansion of a semiconductor element made of silicon (hereinafter referred to as a base having a small coefficient of thermal expansion)
Has been developed, and semiconductor devices using the base are being put into practical use.

[発明が解決しようとする問題点] しかしながら、上記低温焼成により形成されるムライ
トセラミック等からなる小熱、膨張率の基体は、通常の
高温焼成により形成されるアルミナセラミックからなる
基体に比べて、機械的強度がなく、脆弱であった。
[Problems to be Solved by the Invention] However, a substrate having a low heat and an expansion coefficient made of mullite ceramic or the like formed by the above-described low-temperature sintering is, compared with a substrate made of alumina ceramic formed by ordinary high-temperature sintering, There was no mechanical strength and it was brittle.

即ち、アルミナセラミックからなる基体は、その抗折
力が30〜40kg/cm2であるのに対して、ムライトセラミッ
ク等からなる小熱膨張率の基体は、その抗折力が20kg/c
m2しかない。
That is, a substrate made of alumina ceramic has a transverse rupture strength of 30 to 40 kg / cm 2 , whereas a base body made of mullite ceramic or the like having a low coefficient of thermal expansion has a transverse rupture force of 20 kg / c.
m 2 only.

また、ムライトセラミック等からなる小熱膨張率の基
体の熱膨張率が、4〜7×10-6/℃であるのに対して、
銀ろうの熱膨張率は、18〜20×10-6/℃であって、銀ろ
うの熱膨張率が、小熱膨張率の基体の熱膨張率の4〜5
倍程度大きい。
In addition, while the coefficient of thermal expansion of a substrate having a small coefficient of thermal expansion such as mullite ceramic is 4 to 7 × 10 −6 / ° C.,
The coefficient of thermal expansion of the silver solder is 18 to 20 × 10 −6 / ° C., and the coefficient of thermal expansion of the silver solder is 4 to 5 times the coefficient of thermal expansion of the substrate having a small coefficient of thermal expansion.
About twice as large.

そのため、小熱膨張率の基体1表面に形成された回路
パターンのターミナル2に、第2図に示したように、リ
ード3端部を銀ろう等のろう材4を用いてろう付け接続
した場合に、熱膨張率の大きい銀ろう等のろう材4が、
既述のムライトセラミック等からなる小熱膨張率の基体
1表面で、基体1に対して、大きく収縮しながら冷却、
固化した。そして、その基体1表面で大きく収縮しなが
ら冷却、固化する銀ろう等のろう材4から基体1に過大
な熱収縮応力が加わって、ムライトセラミック等からな
る脆弱な基体1にクラックが生じてしまった。そして、
基体1の気密性が損なわれたり、基体1に生じたクラッ
クで、基体1表面のターミナル2にろう付け接続したリ
ード3端部の接続強度が不安定となったりした。
Therefore, as shown in FIG. 2, when the ends of the leads 3 are brazed to the terminals 2 of the circuit pattern formed on the surface of the substrate 1 having a low coefficient of thermal expansion using a brazing material 4 such as silver brazing. In addition, a brazing filler metal 4 having a large coefficient of thermal expansion, such as silver brazing,
On the surface of the base 1 having a low coefficient of thermal expansion made of the mullite ceramic or the like described above, the base 1 is cooled while greatly shrinking.
Solidified. Excessive heat shrinkage stress is applied to the base 1 from the brazing material 4 such as silver brazing, which cools and solidifies while largely shrinking on the surface of the base 1, causing cracks in the fragile base 1 made of mullite ceramic or the like. Was. And
The airtightness of the base 1 was impaired, and cracks formed in the base 1 made the connection strength of the ends of the leads 3 brazed to the terminals 2 on the surface of the base 1 unstable.

本発明は、このような問題点を解決するためになされ
たもので、小熱膨張率の基体表面の回路パターンのター
ミナルに、銀ろう等のろう材を用いてリード端部を、ろ
う材から基体に過大な熱収縮応力を加えずに、ろう付け
接続できる、セラミック基体のリード取り付け構造(以
下、リード取り付け構造という)を提供することを目的
としている。
The present invention has been made in order to solve such a problem, and a lead end portion is formed from a brazing material such as a silver brazing material on a terminal of a circuit pattern on a substrate surface having a low coefficient of thermal expansion. It is an object of the present invention to provide a ceramic substrate lead mounting structure (hereinafter referred to as a lead mounting structure) that can be brazed and connected without applying excessive heat shrinkage stress to the substrate.

[問題点を解決するための手段] 上記目的を達成するために、本発明のリード取り付け
構造は、セラミック基体に備えられた回路パターンの前
記基体表面に設けられたターミナルにリード端部がろう
材を用いてろう付け接続されたセラミック基体におい
て、前記リード端部とターミナルとの間のろう材内部
に、前記リードと別体に形成された部材であって、前記
ターミナルの外径と同一かまたはターミナルの外径より
若干小さい外径を持ち、前記ろう材より熱膨張率が小さ
い部材を介在させたことを特徴としている。
Means for Solving the Problems In order to achieve the above object, a lead mounting structure according to the present invention provides a circuit pattern provided on a ceramic substrate, in which a terminal provided on the surface of the substrate has a brazing filler metal terminal. A member formed separately from the lead inside the brazing material between the end of the lead and the terminal, wherein the outer diameter of the terminal is equal to or A member having an outer diameter slightly smaller than the outer diameter of the terminal and having a smaller coefficient of thermal expansion than the brazing material is interposed.

本発明のリード取り付け構造においては、部材が、そ
の表面に金属めっきが施されたモリブデン、タングステ
ンまたは酸化チタンからなることを好適としている。
In the lead mounting structure of the present invention, it is preferable that the member is made of molybdenum, tungsten or titanium oxide whose surface is plated with metal.

[作用] 本発明のリード取り付け構造においては、リード端部
をセラミック基体表面の回路パターンのターミナルに銀
ろう等のろう材を用いてろう付け接続した際に、その熱
膨張率の大きいろう材の多くの部分を、リード端部とタ
ーミナルとの間のろう材内部に介在させた部材であっ
て、ろう材より熱膨張率が小さい部材で置き換えること
ができる。
[Function] In the lead mounting structure of the present invention, when the lead end is brazed to the terminal of the circuit pattern on the surface of the ceramic base using a brazing material such as silver brazing material, the brazing material having a large coefficient of thermal expansion is used. Many parts can be replaced by members interposed inside the brazing material between the lead ends and the terminals and having a smaller coefficient of thermal expansion than the brazing material.

また、リード端部とターミナルとの間に介在させた上
記部材を、ターミナルの外径と同一かまたはターミナル
の外径より若干小さい外径としたため、上記部材周囲と
ターミナルとの間に亙ってメニスカス形状を描いて付着
するろう材の量を極めて少なく抑えることができる。
Further, since the member interposed between the lead end and the terminal has the same outer diameter as the terminal or slightly smaller than the outer diameter of the terminal, the member extends between the periphery of the member and the terminal. The amount of brazing material adhered in a meniscus shape can be extremely reduced.

そのため、リード端部をターミナルにろう付け接続し
た際に、セラミック基体表面で冷却、固化するろう材の
量を極めて少なく抑えて、そのろう材からセラミック基
体に加わる熱収縮応力を大幅に弱めることができる。
Therefore, when the lead ends are brazed to the terminals, the amount of brazing material that cools and solidifies on the surface of the ceramic base is extremely small, and the heat shrinkage stress applied to the ceramic base from the brazing material is greatly reduced. it can.

また、部材をリードと別体に形成したため、ろう材内
部に介在させる部材に、リードと同一素材からなる部材
でない、セラミック基体の熱膨張率に近い熱膨張率を持
つ部材、またはろう材が冷却、固化する際の熱収縮応力
を減殺することのできる零に近い熱膨張率を持つ部材を
選択できる。そして、リード端部をターミナルにろう付
け接続した際に、ろう材内部に介在させた部材からセラ
ミック基体に加わる熱収縮応力を的確に弱めたり、ろう
材内部に介在させた部材で、ろう材が冷却、固化する際
の熱収縮応力を減殺したりできる。
In addition, since the member is formed separately from the lead, the member interposed inside the brazing material is not a member made of the same material as the lead, but a member having a thermal expansion coefficient close to that of the ceramic base or a brazing material is cooled. A member having a coefficient of thermal expansion close to zero that can reduce the heat shrinkage stress during solidification can be selected. Then, when the lead end is connected to the terminal by brazing, the heat shrinkage stress applied to the ceramic base from the member interposed inside the brazing material is appropriately reduced, or the brazing material is interposed inside the brazing material. Heat shrinkage stress during cooling and solidification can be reduced.

[実施例] 次に、本発明の実施例を図面に従い説明する。Example Next, an example of the present invention will be described with reference to the drawings.

第1図は本発明のリード取り付け構造の好適な実施例
を示し、詳しくはその一部破断正面図である。以下に、
このリード取り付け構造を説明する。
FIG. 1 shows a preferred embodiment of the lead mounting structure of the present invention, and is a partially broken front view thereof. less than,
This lead mounting structure will be described.

図のリード取り付け構造においては、小熱膨張率のセ
ラミック基体1を、熱膨張率が4.5×10-6/℃のムライト
セラミックで形成した。
In the lead mounting structure shown in the figure, a ceramic substrate 1 having a low coefficient of thermal expansion was formed of mullite ceramic having a coefficient of thermal expansion of 4.5 × 10 −6 / ° C.

基体1表面には、タングステンメタライズからなる円
形状のターミナル2を、基体1の内部やその表面に備え
たタングステンメタライズからなる回路パターン(図示
せず)に一連に連続させて備えた。
On the surface of the base 1, a circular terminal 2 made of tungsten metallized was provided in series with a circuit pattern (not shown) made of tungsten metallized provided inside or on the surface of the base 1.

ターミナル2表面には、ニッケルめっき6を無電解め
っき法により施した。そして、ターミナル2表面のろう
材4の濡れ性を向上させた。
Nickel plating 6 was applied to the surface of the terminal 2 by an electroless plating method. And the wettability of the brazing material 4 on the surface of the terminal 2 was improved.

ニッケルめっき6が施されたターミナル2上面には、
第1図に示したように、銀ろうの熱膨張率より小さい熱
膨張率を持ち、ムライトセラミックからなる基体1の熱
膨張率に近い熱膨張率を持った、モリブデンからなる部
材5を搭載した。
On the upper surface of the terminal 2 on which the nickel plating 6 is applied,
As shown in FIG. 1, a member 5 made of molybdenum having a coefficient of thermal expansion smaller than the coefficient of thermal expansion of silver braze and having a coefficient of thermal expansion close to the coefficient of thermal expansion of the substrate 1 made of mullite ceramic is mounted. .

部材5の表面には、ニッケルめっき6、金めっき等の
金属めっきを施した。そして、部材5表面のろう材4の
濡れ性を向上させて、その部材5表面に銀ろう等のろう
材4を的確に密着させることができるようにした。
The surface of the member 5 was subjected to metal plating such as nickel plating 6 and gold plating. Then, the wettability of the brazing material 4 on the surface of the member 5 is improved so that the brazing material 4 such as silver brazing can be accurately adhered to the surface of the member 5.

部材5は、円形状をしたターミナル2の外径と同一か
またはターミナル2の外径より若干小さい外径を持っ
た、円盤状に形成した。そして、その部材5を、ターミ
ナル2上面に搭載した。
The member 5 was formed in a disk shape having an outer diameter equal to or slightly smaller than the outer diameter of the terminal 2 having a circular shape. Then, the member 5 was mounted on the upper surface of the terminal 2.

ターミナル2上面に搭載した部材5上面には、既述の
コバールからなる細い円柱状をしたリード3を、その下
端を部材5上面に当接させた状態で、部材5上方に起立
させて搭載した。
On the upper surface of the member 5 mounted on the upper surface of the terminal 2, the thin columnar lead 3 made of Kovar described above was mounted so as to rise above the member 5 with its lower end abutting on the upper surface of the member 5. .

次いで、リード3端部と部材5とターミナル2とを、
ターミナル2周辺の基体1と共に、800℃前後に予備加
熱した。それと共に、銀ろう4aを加熱して溶融させた状
態とした。そして、その溶融された銀ろう4aを、リード
3端部の周囲の部材5の周囲とターミナル2とに亙って
付着させた。そして、その銀ろう4aを、ターミナル2周
辺の基体1表面で冷却して固化させた。
Next, the end of the lead 3, the member 5 and the terminal 2 are
Preheating was performed at about 800 ° C. together with the substrate 1 around the terminal 2. At the same time, the silver solder 4a was heated and melted. Then, the molten silver solder 4a was attached to the periphery of the member 5 around the end of the lead 3 and the terminal 2. Then, the silver solder 4a was cooled and solidified on the surface of the base 1 around the terminal 2.

第1図に示したリード取り付け構造は、以上のように
して、構成した。
The lead mounting structure shown in FIG. 1 was configured as described above.

次に、このリード取り付け構造の作用を説明する。 Next, the operation of the lead mounting structure will be described.

上述リード取り付け構造においては、第1図に示した
ように、リード3端部を基体1表面のターミナル2にろ
う付け接続した銀ろう4aの多くの部分を、リード3端部
とターミナル2との間の銀ろう4a内部に介在させた部材
5であって、銀ろう4aの熱膨張率より小さい熱膨張率を
持った部材5で置き換えることができた。
In the above-described lead mounting structure, as shown in FIG. 1, many parts of the silver solder 4a in which the ends of the leads 3 are brazed and connected to the terminals 2 on the surface of the base 1 are connected to the ends of the leads 3 and the terminals 2. The member 5 interposed between the silver brazes 4a and having a coefficient of thermal expansion smaller than that of the silver solder 4a could be replaced.

また、リード3端部とターミナル2との間に介在させ
た部材5を、ターミナル2の外径と同一かまたはターミ
ナル2の外径より若干小さい外径としたため、第1図に
示したように、部材5周囲とターミナル2との間に亙っ
てメニスカス形状を描いて付着する銀ろう4aの量を極め
て少なく抑えることができた。
Also, since the member 5 interposed between the end of the lead 3 and the terminal 2 has the same outer diameter as the terminal 2 or slightly smaller than the outer diameter of the terminal 2, as shown in FIG. The amount of the silver solder 4a adhered in a meniscus shape between the periphery of the member 5 and the terminal 2 could be extremely reduced.

そして、リード3端部をターミナル2にろう付け接続
するための銀ろう4aであって、基体1表面で冷却、固化
させる銀ろう4aの量を極めて少なく抑えて、その銀ろう
4aから基体1に加わる熱収縮応力を大幅に弱めることが
できた。
A silver solder 4a for brazing and connecting the end of the lead 3 to the terminal 2 is used. The amount of the silver solder 4a to be cooled and solidified on the surface of the substrate 1 is extremely small, and the silver solder is used.
From 4a, the heat shrinkage stress applied to the base 1 was significantly reduced.

また、部材5をリード3と別体に形成して、銀ろう4a
内部に介在させた部材5に、ムライトセラミックからな
る基体1に近い熱膨張率を持った、42アロイ、コバール
等からなるリード3を構成している素材と異なる素材
の、モリブデンからなる部材5を選択したため、リード
3端部をターミナル2にろう付け接続した際に、銀ろう
4a内部に介在させた部材5から基体1に加わる熱収縮応
力を的確に弱めることができた。
Also, the member 5 is formed separately from the lead 3, and the silver solder 4a is formed.
A member 5 made of molybdenum having a thermal expansion coefficient close to that of the base 1 made of mullite ceramic and having a material different from the material constituting the lead 3 made of 42 alloy, Kovar, etc. Because of the selection, when the end of lead 3 was soldered to terminal 2
4a, the heat shrinkage stress applied to the base 1 from the member 5 interposed in the inside 4a was able to be appropriately reduced.

また、部材5表面に金属めっきを施して、部材5表面
に銀ろう4aが的確に密着するようにしたため、リード3
端部をターミナル2にろう付け接続した際に、部材5表
面に銀ろう4aが的確に密着した状態となって、リード3
端部をターミナル2に接続強度高く高信頼性を持たせて
ろう付け接続できた。
In addition, the surface of the member 5 is plated with metal so that the silver solder 4a is in close contact with the surface of the member 5 accurately.
When the end is soldered to the terminal 2, the silver solder 4 a comes into close contact with the surface of the member 5, and the lead 3
The end was brazed to the terminal 2 with high connection strength and high reliability.

その結果、リード3端部をターミナル2に銀ろう4aを
用いてろう付け接続した際に、ターミナル2周辺の基体
1表面で冷却、固化する銀ろう4aから基体1に加わる熱
収縮応力で、ムライトセラミックからなる脆弱な基体1
にクラックが生ずるのを、確実に防ぐことができた。そ
して、基体1の気密性が損なわれたり、基体1に生じた
クラックで、基体1表面のターミナル2にろう付け接続
したリード3端部の接続強度が不安定となったりするの
を、確実に防ぐことができた。
As a result, when the ends of the leads 3 are brazed to the terminal 2 using the silver solder 4a, the heat shrinkage stress applied to the base 1 from the silver solder 4a that cools and solidifies on the surface of the base 1 around the terminal 2 causes mullite. Fragile substrate 1 made of ceramic
The generation of cracks was surely prevented. Then, it is ensured that the airtightness of the base 1 is impaired and that the cracks formed in the base 1 make the connection strength of the ends of the leads 3 brazed to the terminals 2 on the surface of the base 1 unstable. Could be prevented.

また、上述リード取り付け構造により、ターミナル2
にろう付け接続したリード3の引張り強度を測定したと
ころ、6kg以上あって、ターミナル2に対するリード3
の接続強度が、実用上充分あることが確認された。
Also, the terminal 2
When the tensile strength of the lead 3 brazed to the terminal 2 was measured, the lead 3
It was confirmed that the connection strength was sufficiently high for practical use.

なお、上述リード取り付け構造においては、ろう材4
に、銀ろう4aに代えて、銀と銅の共晶ろう、金ゲルマニ
ウムろうを用いても良い。また、基体1には、ムライト
セラミックに代えて、低温焼成アルミナセラミックから
なる基体を用いても良い。また、ターミナル2は、その
表面にろう材4の濡れ性を良くするための金属めっきを
施す必要のない、銀メタライズで形成しても良い。そし
て、そのようにしても、上述リード取り付け構造とほぼ
同様な作用を持つリード取り付け構造を達成できる。
In the lead mounting structure, the brazing material 4
Instead of the silver solder 4a, a eutectic solder of silver and copper or a gold germanium solder may be used. Further, as the base 1, a base made of low-temperature fired alumina ceramic may be used instead of the mullite ceramic. Further, the terminal 2 may be formed by silver metallization which does not require metal plating for improving the wettability of the brazing material 4 on its surface. And even in such a case, a lead mounting structure having substantially the same operation as the above-described lead mounting structure can be achieved.

また、部材5は、モリブデンの他に、基体1に近い熱
膨張率を持つタングステンまたは酸化チタンを用いて形
成しても良い。または、部材5を、銀ろう4aより熱膨張
率の小さい表面が金属化された無機部材であって、その
表面にろう材4が的確に密着する無機部材を用いても良
い。そして、そのようにしても、上述リード取り付け構
造とほぼ同様な作用を持つリード取り付け構造を構成で
きる。
Further, the member 5 may be formed using tungsten or titanium oxide having a coefficient of thermal expansion close to that of the base 1, in addition to molybdenum. Alternatively, the member 5 may be an inorganic member whose surface having a smaller coefficient of thermal expansion than that of the silver solder 4a is metallized, and the brazing material 4 is accurately adhered to the surface. And even in such a case, a lead mounting structure having substantially the same operation as the above-described lead mounting structure can be configured.

また、部材5を、基体1よりも小さい零に近い熱膨張
率を持つ部材を用いて形成しても良い。そして、該部材
5をろう材4内部に介在させることにより、ろう材4が
冷却、固化する際の熱収縮応力を、上記部材5で減殺で
きるようにしても良い。そして、ろう材4から基体1に
加わる熱収縮応力を、上記部材5で弱めることができる
ようにしても良い。
Further, the member 5 may be formed using a member having a thermal expansion coefficient smaller than the base 1 and close to zero. By interposing the member 5 inside the brazing material 4, the heat shrinkage stress when the brazing material 4 is cooled and solidified may be reduced by the member 5. Then, the heat shrinkage stress applied to the base 1 from the brazing material 4 may be reduced by the member 5.

また、アルミナセラミックより強靭なものの、ろう材
4との熱膨張率の差がアルミナセラミックよりも大き
な、窒化アルミニウムからなる基体1表面のターミナル
2にリード3をろう付け接続した場合にも、該基体1と
ろう材4との熱膨張率の差により、ろう材4から基体1
に過大な熱収縮応力が加わって、基体1にクラックが生
ずる場合がある。そのため、このような基体1において
も、本発明のリード取り付け構造を用いて、リード3を
基体1表面のターミナル2にろう付け接続することによ
り、ろう材4から基体1に過大な熱収縮応力が加わっ
て、基体1にクラックが生ずるのを確実に防ぐことがで
きる。
Also, when the lead 3 is brazed and connected to the terminal 2 on the surface of the base 1 made of aluminum nitride, which is tougher than the alumina ceramic but has a larger difference in thermal expansion coefficient from the brazing material 4 than the alumina ceramic, 1 and the brazing material 4, the difference in the coefficient of thermal expansion between the brazing material 4 and the base 1
In some cases, excessive heat shrinkage stress may be applied to the substrate 1 to cause cracks. Therefore, even in such a substrate 1, an excessive heat shrinkage stress is applied to the substrate 1 from the brazing material 4 by brazing and connecting the leads 3 to the terminals 2 on the surface of the substrate 1 using the lead mounting structure of the present invention. In addition, the occurrence of cracks in the base 1 can be reliably prevented.

また、第1図では、基板状をした基体1表面のターミ
ナル2にリード3をろう付け接続したリード取り付け構
造を示しているが、本発明のリード取り付け構造は、パ
ッケージ状をなす基体1表面の入出力用の回路パターン
のターミナルにリード端部にろう付け接続する場合にも
利用可能である。そして、そのようなパッケージ状をな
す基体1にも、本発明のリード取り付け構造を用いて、
そのパケージ状をなす基体1表面のターミナル2にリー
ド3をろう付け接続することにより、その基体1にクラ
ックが生ずるのを確実に防ぐことができる。
FIG. 1 shows a lead mounting structure in which leads 3 are brazed and connected to terminals 2 on the surface of a substrate 1 in the form of a substrate. The present invention is also applicable to a case where the terminal of the input / output circuit pattern is brazed to the lead end. Then, the base 1 having such a package shape is also provided with the lead mounting structure of the present invention,
By connecting the leads 3 to the terminals 2 on the surface of the packaged base 1 by brazing, it is possible to reliably prevent the base 1 from being cracked.

[発明の効果] 以上説明したように、本発明のリード取り付け構造に
よれば、基体表面のターミナルにリード端部をろう付け
接続するためのろう材の量を、極めて少なく抑えること
ができる。
[Effects of the Invention] As described above, according to the lead mounting structure of the present invention, the amount of brazing material for brazing the lead end to the terminal on the surface of the base can be extremely reduced.

それと共に、ろう材内部に介在させる部材に、基体の
熱膨張率に近い熱膨張率を持つ部材、またはろう材が冷
却、固化する際の熱収縮応力を減殺することのできる零
に近い熱膨張率を持つ部材を選択できる。
At the same time, a member having a coefficient of thermal expansion close to that of the base, or a thermal expansion close to zero that can reduce the thermal contraction stress when the brazing material cools and solidifies, is added to the member interposed inside the brazing material. You can select a member with a ratio.

そして、リード端部をターミナルにろう付け接続した
際に、基体表面で冷却、固化するろう材から基体に加わ
る熱収縮応力を大幅に弱めることができる。
Then, when the lead ends are connected to the terminals by brazing, the heat shrinkage stress applied to the base from the brazing material that cools and solidifies on the base surface can be greatly reduced.

その結果、リード端部をセラミック基体表面のターミ
ナルにろう付け接続した際に、基体にクラックが生ずる
のを、確実に防ぐことができる。そして、基体の気密性
が損なわれたり、基体に生じたクラックで、基体表面の
ターミナルにろう付け接続したリード端部の接続強度が
不安定となったりするのを防ぐことができる。
As a result, when the lead end is brazed to the terminal on the surface of the ceramic substrate, it is possible to reliably prevent the substrate from cracking. In addition, it is possible to prevent the airtightness of the base from being impaired, and to prevent the cracks formed in the base from destabilizing the connection strength of the ends of the leads brazed to terminals on the surface of the base.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明のリード取り付け構造の一部破断正面
図、第2図は従来のリード取り付け構造の一部破断正面
図である。 1……基体、2……ターミナル、3……リード、4……
ろう材、4a……銀ろう、5……部材。
FIG. 1 is a partially broken front view of a lead mounting structure of the present invention, and FIG. 2 is a partially broken front view of a conventional lead mounting structure. 1 ... Base, 2 ... Terminal, 3 ... Lead, 4 ...
Brazing material, 4a: silver brazing, 5: members.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】セラミック基体に備えられた回路パターン
の前記基体表面に設けられたターミナルにリード端部が
ろう材を用いてろう付け接続されたセラミック基体にお
いて、前記リード端部とターミナルとの間のろう材内部
に、前記リードと別体に形成された部材であって、前記
ターミナルの外径と同一かまたはターミナルの外径より
若干小さい外径を持ち、前記ろう材より熱膨張率が小さ
い部材を介在させたことを特徴とするセラミック基体の
リード取り付け構造。
1. A ceramic base having a lead end connected to a terminal provided on the surface of the base of a circuit pattern provided on the ceramic base by brazing using a brazing material. Inside the brazing material, a member formed separately from the lead, having an outer diameter equal to or slightly smaller than the outer diameter of the terminal, and having a smaller coefficient of thermal expansion than the brazing material. A lead mounting structure for a ceramic base, wherein a member is interposed.
【請求項2】部材が、その表面に金属めっきが施された
モリブデン、タングステンまたは酸化チタンからなる特
許請求の範囲第1項記載のセラミック基体のリード取り
付け構造。
2. The lead mounting structure for a ceramic substrate according to claim 1, wherein the member is made of molybdenum, tungsten or titanium oxide whose surface is metal-plated.
JP62308090A 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate Expired - Lifetime JP2587014B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62308090A JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62308090A JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

Publications (2)

Publication Number Publication Date
JPH01149379A JPH01149379A (en) 1989-06-12
JP2587014B2 true JP2587014B2 (en) 1997-03-05

Family

ID=17976745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62308090A Expired - Lifetime JP2587014B2 (en) 1987-12-04 1987-12-04 Lead mounting structure of ceramic substrate

Country Status (1)

Country Link
JP (1) JP2587014B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4601796B2 (en) * 2000-09-22 2010-12-22 株式会社東芝 Ceramic circuit board with terminals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118340B2 (en) * 1986-10-28 1995-12-18 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Connector assembly

Also Published As

Publication number Publication date
JPH01149379A (en) 1989-06-12

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