JPH01145887A - Insulating substrate for electric device and manufacture thereof - Google Patents
Insulating substrate for electric device and manufacture thereofInfo
- Publication number
- JPH01145887A JPH01145887A JP30375687A JP30375687A JPH01145887A JP H01145887 A JPH01145887 A JP H01145887A JP 30375687 A JP30375687 A JP 30375687A JP 30375687 A JP30375687 A JP 30375687A JP H01145887 A JPH01145887 A JP H01145887A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- substrate
- chromium
- iron
- electrical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 30
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000640 Fe alloy Inorganic materials 0.000 claims abstract description 19
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 19
- 239000011651 chromium Substances 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 3
- QEFDIAQGSDRHQW-UHFFFAOYSA-N [O-2].[Cr+3].[Fe+2] Chemical compound [O-2].[Cr+3].[Fe+2] QEFDIAQGSDRHQW-UHFFFAOYSA-N 0.000 claims 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims 3
- 150000002431 hydrogen Chemical class 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 235000013980 iron oxide Nutrition 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、たとえば混成集積回路のような電気装置用絶
縁基板の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an insulating substrate for an electrical device, such as a hybrid integrated circuit.
［従来技術］
従来混成集積回路用基板のような電気装置用絶縁基板に
は電気絶縁性に優れたセラミック基板が主として用いら
れている。しかしセラミックは礪械的強度、特に抗折力
が弱く、加工することができない。またセラミック基板
は、基板が大きくなるにしたがって平坦度が悪くなり、
このためセラミックで大形の基板を作ることは困難であ
る。[Prior Art] Conventionally, ceramic substrates with excellent electrical insulation properties have been mainly used as insulating substrates for electrical devices such as substrates for hybrid integrated circuits. However, ceramics have low mechanical strength, especially transverse rupture strength, and cannot be processed. Additionally, as the size of the ceramic substrate increases, its flatness deteriorates.
For this reason, it is difficult to make large-sized ceramic substrates.
このためセラミック基板に代えて金属基体を用いること
が考えられている。金属基体の場合は、この上に形成す
る電子回路を金属基体から絶縁する必要があり、各種方
法が提案されている。例えば鉄を主成分とする金属基体
を用いる場合、この表面にガラス層を形成した基板が提
案されており、更に金属基体上に酸化物層を形成し、そ
の上にガラス層を形成して、ガラス層が金属表面に密着
するようにした基板も提案されている。For this reason, it has been considered to use a metal substrate instead of a ceramic substrate. In the case of a metal substrate, it is necessary to insulate the electronic circuit formed thereon from the metal substrate, and various methods have been proposed. For example, when using a metal substrate whose main component is iron, a substrate with a glass layer formed on the surface of the substrate has been proposed, and an oxide layer is further formed on the metal substrate, and a glass layer is formed on top of the oxide layer. A substrate in which a glass layer is in close contact with a metal surface has also been proposed.
［従来技術の問題点］
しかしこの基板を厚膜用の混成集積回路用基板として用
いた場合、次のような問題がある。叩ち厚膜用の場合、
基板上にガラス質絶縁物層を形成する時、又は基板上に
電子回路を形成する時、いずれも８００℃以上の高温で
焼く工程が繰返されるが、この繰返しにより、初期の状
態での密着性が良好でも、密着性が劣化し、ガラス層が
金属表面から剥離することがある。[Problems with the Prior Art] However, when this substrate is used as a thick film hybrid integrated circuit substrate, the following problems arise. For pounded thick film,
When forming a glassy insulator layer on a substrate or when forming an electronic circuit on a substrate, the baking process is repeated at high temperatures of 800°C or higher, and this repetition improves the adhesion in the initial state. Even if the glass layer is good, the adhesion may deteriorate and the glass layer may peel off from the metal surface.
本発明は、この問題を解決すべくなされたもので、その
目的とするところは、厚膜用重子回路の焼成を繰返して
も絶縁層と金属基体表面との密着性が低下せず、両者間
での密着性に優れた電気装置用絶縁基板を得んとするも
のである。The present invention has been made to solve this problem, and its purpose is to prevent the adhesion between the insulating layer and the metal substrate surface from decreasing even after repeated firing of the thick film heavy element circuit, and to prevent the bond between the two from decreasing. An object of the present invention is to obtain an insulating substrate for electrical devices that has excellent adhesion.
［問題点を解決する手段及び作用］
すなわちこの発明は、クロム１０〜３０重量％を含む鉄
合金からなる金属基体を水素を含む還元雰囲気中で加熱
処理し、次いで前記基体表面の一部又は全面にガラス絶
縁層を形成する電気装置用絶縁基板の製造方法、および
この方法で得られる絶縁基板である。[Means and effects for solving the problem] That is, the present invention heat-treats a metal substrate made of an iron alloy containing 10 to 30% by weight of chromium in a reducing atmosphere containing hydrogen, and then heat-treats a part or the entire surface of the substrate. The present invention discloses a method for manufacturing an insulating substrate for an electrical device in which a glass insulating layer is formed on the substrate, and an insulating substrate obtained by this method.
本発明方法では、まず金属基体１を胴Ｉる。In the method of the present invention, the metal substrate 1 is first heated.
この基体は基本的にはクロム１０〜３０重量％を含む鉄
合金であり、これにアルミニウム０．０５〜７重量％又
は、シリコン０．０５〜５％を含む合金でもよい。This substrate is basically an iron alloy containing 10 to 30% by weight of chromium, and may also be an alloy containing 0.05 to 7% by weight of aluminum or 0.05 to 5% of silicon.
さらにクロム１０〜３０重量％、アルミニウム０．０５
〜７重量％、チタン０．１〜３重量％を含む鉄合金など
が使用可能である。In addition, chromium 10-30% by weight, aluminum 0.05%
An iron alloy containing ~7% by weight and 0.1-3% by weight of titanium can be used.
この種の鉄合金は、アルミニウムや鉄と異なり、加工性
、耐食性、耐熱性がいずれも優れ、金属基体として最適
なものである。クロムの添加範囲を上記範囲に限定した
理由は、含有量が少ないと上記効果が発揮されず、また
多すぎると材料の加工性が悪くなるためである。アルミ
ニウム、シリコン、チタンについても同様である。加熱
処理に供される金属基体は、その金属学的組織が異なっ
ていても本発明の効果にほとんど影響を及ぼさず、従っ
て、圧延組織のものでも、焼鈍組織のものでも有効であ
る。Unlike aluminum and iron, this type of iron alloy has excellent workability, corrosion resistance, and heat resistance, making it ideal as a metal substrate. The reason why the addition range of chromium is limited to the above range is that if the content is too small, the above effects will not be exhibited, and if the content is too large, the workability of the material will deteriorate. The same applies to aluminum, silicon, and titanium. Even if the metal substrate to be subjected to heat treatment has a different metallographic structure, the effect of the present invention is hardly affected, and therefore, both rolled structure and annealed structure are effective.
次いで金属基体を水素を含む雰囲気、例えばアンモニア
の分解によって形成される水素と窒素との混合雰囲気中
で、かつ鉄酸化物が鉄と酸素とに分解する露点以下で加
熱処理して基体表面に被膜を形成する。この被膜は、ガ
ラス質絶縁物層に対して金属基体よりも密着性が良く、
金属基体とガラス質絶縁物層の密着性を向上させること
ができる。この被膜は、金属基体が鉄−クロム系合金で
あるにもかかわらず、鉄酸化物を含まず、場合によって
はクロム酸化物も含まず、主にアルミニウム酸化物など
、酸素分圧の解離圧の低い酸化物からなる。このような
組成の被膜を設けることにより密着性、とくに高温での
加熱を繰返した時の密着性が向上するのは、上記酸化物
のち密性が優れ、金属基体から鉄分がガラス内に拡散す
ることがないためと、発明者は推定している。逆に従来
公知の絶縁基板は、強制的に酸化層を形成するので、こ
の層に鉄酸化物が含まれている。このため、発明者は、
従来の絶縁基板は鉄酸化物層を通して鉄分が拡散し、こ
の結果密着性が劣化すると、推定している。鉄酸化物を
鉄と酸素とに分解するための還元雰囲気の露点は好まし
くは−２０’Ｃ以下、特に好ましくは一４０℃とするの
がよい。このように低い露点で加熱処理することにより
、形成される被膜をアモルファスが多く結晶質の少ない
構造とすることができ、好適である。なお被膜のアモル
ファス化は、基板の成分、被膜形成時の雰囲気、被膜形
成後の冷却速度、および加熱処理温度をコントロールす
ることより行われる。加熱処理温度は、５００ ’Ｃ〜
１２ｏＯ℃、とくに好ましくは８００℃〜９００℃とす
るのがよい。処理時間は短時間でもよく、所定の温度に
達していることが重要である。しかし金属基体を＾温、
例えば９００℃以上の温度で長時間さらすと、材料の加
工性が劣化するので、この点に注意する必要がある。こ
のように還元雰囲気で生成された被膜は、その膜厚が極
めて薄くて透明度があり、通常０．００２〜０．０３μ
ｍである。Next, the metal substrate is heat-treated in an atmosphere containing hydrogen, for example, a mixed atmosphere of hydrogen and nitrogen formed by decomposition of ammonia, and below the dew point at which iron oxide decomposes into iron and oxygen to form a coating on the surface of the substrate. form. This coating has better adhesion to the glassy insulating layer than the metal substrate,
Adhesion between the metal substrate and the glassy insulating layer can be improved. Although the metal base is an iron-chromium alloy, this film does not contain iron oxides, and in some cases does not contain chromium oxides, but mainly contains aluminum oxides, etc. Consists of low oxides. Providing a film with such a composition improves adhesion, especially when repeatedly heated at high temperatures, because the oxide has excellent tightness and iron diffuses from the metal base into the glass. The inventor estimates that this is because there is no such thing. On the contrary, in conventionally known insulating substrates, an oxidized layer is forcibly formed, so that this layer contains iron oxide. For this reason, the inventor
It is estimated that in conventional insulating substrates, iron diffuses through the iron oxide layer, resulting in poor adhesion. The dew point of the reducing atmosphere for decomposing iron oxide into iron and oxygen is preferably -20'C or lower, particularly preferably -40C. Heat treatment at such a low dew point allows the formed film to have a structure that is largely amorphous and has little crystallinity, which is preferable. Note that the film is made amorphous by controlling the components of the substrate, the atmosphere during film formation, the cooling rate after film formation, and the heat treatment temperature. Heat treatment temperature is 500'C ~
The temperature is preferably 120°C, particularly preferably 800°C to 900°C. The treatment time may be short, and it is important that a predetermined temperature is reached. However, when the metal substrate is heated to
For example, if the material is exposed to temperatures of 900° C. or higher for a long period of time, the workability of the material will deteriorate, so care must be taken in this regard. The film produced in this reducing atmosphere is extremely thin and transparent, and usually has a thickness of 0.002 to 0.03μ.
It is m.
次にこの被膜の上にペースト化、あるいはスラリー化し
たガラス質物質を塗布して、ガラス質絶縁物層２、例え
ばホウケイ酸鉛を主成分とする結晶化ガラスを形成する
。次いでこれを乾燥後焼成づる。焼成に使用するガラス
の組成は特に限定することなく、いずれの組成でも同様
の効果を秦する。Next, a pasted or slurried vitreous substance is applied onto this film to form a vitreous insulating layer 2, for example, crystallized glass containing lead borosilicate as a main component. This is then dried and fired. The composition of the glass used for firing is not particularly limited, and any composition produces the same effect.
［発明の効果１
この発明によれば、鉄、鉄酸化物のない被膜を介して金
属基体にガラス絶縁層を設けているので、金属基体とガ
ラス絶縁層とが従来のものに比べて強固に接着した電気
装置用絶縁基板を作ることが可能である。そしてこの基
体は、繰返し焼成を行っても金属基体、ガラス絶縁層の
間の密着性が劣化せず熱的安定性があるため、特に厚膜
回路を使用した電気装置用絶縁基板として優れたもので
ある。[Effect of the invention 1] According to the present invention, since the glass insulating layer is provided on the metal base via a film free of iron or iron oxide, the metal base and the glass insulating layer are stronger than in the conventional case. It is possible to create bonded insulating substrates for electrical devices. This substrate is thermally stable, with no deterioration in the adhesion between the metal substrate and the glass insulating layer even after repeated firing, making it particularly suitable as an insulating substrate for electrical devices using thick film circuits. It is.
このことは以下の実施例により確認された。This was confirmed by the following examples.
［実施例コ
クロム１５重量％、アルミニウム４重量％を含有する０
、４ ｍｉ厚さの金属基体（２５，４ｍｍｘ ２５．４
ｎ＋ｍ）を水素７５容量％−窒素２５容凹％の混合雰囲
気中、露点−４０℃、温度８７０℃で３０秒間加熱処理
した。この処理で得られた金属基体上の被膜は、鉄およ
び鉄酸化物がなく、アルミニウム酸化物を主体とする厚
さ０．０１μｍのち密なアモルファス構造の被膜であっ
た。つぎにペースト化したホウケイ酸鉛ガラスを上記基
体の上にスクリーン印刷法を用いて塗布し、大気中１５
０℃で１０分間乾燥し、その後大気中８５０℃で１０分
間の焼成をおこなった。このようにして得られた絶縁基
板のガラス絶縁層と金ａ基体との密着強度を調べるため
に、ガラス絶縁層形成面を凸面とし、絶縁基板を３ ｍ
ｍの曲げ半径で角度９０度に曲げ加工した。曲げ加工部
のガラス層にはクラックが入ったが、ガラス層は金属表
面から剥離せず、金属基体とガラス絶縁層とが良い密着
強度を持っていることがわかった。また金属基体とガラ
ス絶縁層との密着強度を垂直引張り強度によって評価し
たところ、６３ｋｇ／ ５１ＩＩｌφと高い強度がでた
。また９００℃、６０分の加熱を１０回繰返したところ
、金属基体と絶縁層との剥離は生じなかった。[Example 0 containing 15% by weight of cochrome and 4% by weight of aluminum]
, 4 mi thick metal substrate (25,4 mm x 25,4
n+m) was heat-treated for 30 seconds at a dew point of -40°C and a temperature of 870°C in a mixed atmosphere of 75% hydrogen by volume and 25% nitrogen by volume. The film on the metal substrate obtained by this treatment was free of iron and iron oxide and had a dense amorphous structure with a thickness of 0.01 μm and mainly composed of aluminum oxide. Next, paste-formed lead borosilicate glass was applied onto the above substrate using a screen printing method, and then exposed to air for 15 minutes.
It was dried at 0°C for 10 minutes, and then fired in the air at 850°C for 10 minutes. In order to examine the adhesion strength between the glass insulating layer of the thus obtained insulating substrate and the gold a substrate, the glass insulating layer forming surface was made a convex surface, and the insulating substrate was placed at a height of 3 m.
It was bent at an angle of 90 degrees with a bending radius of m. Although cracks appeared in the glass layer at the bent portion, the glass layer did not peel off from the metal surface, indicating that the metal base and the glass insulating layer had good adhesion strength. Furthermore, when the adhesion strength between the metal substrate and the glass insulating layer was evaluated by vertical tensile strength, a high strength of 63 kg/51 IIlφ was obtained. Further, when heating at 900° C. for 60 minutes was repeated 10 times, no peeling occurred between the metal base and the insulating layer.
比較例１
クロム１５重量％、アルミニウム４重量％を含有する鉄
合金からなる厚さｏ、４ｍｍの金属基体（２５，４ｗａ
ｘ ２５゜４ｍｍ）表面に、本発明の加熱処理を施すこ
となく、実施例と同じ方法でガラス絶縁層を形成した。Comparative Example 1 A metal substrate (25.4 mm thick) made of an iron alloy containing 15% by weight of chromium and 4% by weight of aluminum
A glass insulating layer was formed on the surface (25° x 4 mm) in the same manner as in the example without applying the heat treatment of the present invention.
このようにして得られた基板に実施例１と同じ曲げ加工
試験をおこなって、ガラス絶縁層と金属基体との密着性
を調べた、この結果、曲げ加工部のガラス層は金属基体
表面から剥離し、金属面が露出した。このことからガラ
ス層と金属基体表面の密着性が極めて弱いことがわかる
。The thus obtained substrate was subjected to the same bending test as in Example 1 to examine the adhesion between the glass insulating layer and the metal substrate. As a result, the glass layer in the bent portion peeled off from the surface of the metal substrate. The metal surface was exposed. This shows that the adhesion between the glass layer and the surface of the metal substrate is extremely weak.
比較例２
クロム１５重量％、アルミニウム４重量％を含有する鉄
合金からなる厚さ０．４ ｍｍの金属基体（２５，４ｍ
ｍｘ ２５．４ｎ＋ｍ）表面に、酸化雰囲気で８５０℃
の加熱処理を施こした後、実施例１と同じ方法でガラス
絶縁層を形成した。このようにして得られた基板に実施
例１と同じ曲げ加工試験をおこなって、ガラス絶縁層と
金属基体との密着性を調べた、この結果、曲げ加工部の
ガラス層は金属基体表面から剥離し、金属面が露出した
。このことからガラス層と金属基体表面の密着性が極め
て弱いことがわかる。また実施例１と同様に加熱を繰返
したところ金属基板と絶縁層との間に剥離が生じた。Comparative Example 2 A 0.4 mm thick metal substrate (25.4 m
mx 25.4n+m) surface at 850°C in an oxidizing atmosphere.
After the heat treatment, a glass insulating layer was formed in the same manner as in Example 1. The thus obtained substrate was subjected to the same bending test as in Example 1 to examine the adhesion between the glass insulating layer and the metal substrate. As a result, the glass layer in the bent portion peeled off from the surface of the metal substrate. The metal surface was exposed. This shows that the adhesion between the glass layer and the surface of the metal substrate is extremely weak. Further, when heating was repeated in the same manner as in Example 1, peeling occurred between the metal substrate and the insulating layer.
実施例２
実施例１と同様な方法で作製した絶縁基板を９００℃の
大気中に３ＦＲ間放置し、空冷した。この基板の密着強
度を垂直引張り強度で評価したところ６０Ｋ Ｏ１５ｍ
ｍφと良好であった。Example 2 An insulating substrate produced in the same manner as in Example 1 was left in the atmosphere at 900° C. for 3 FR and air-cooled. When the adhesion strength of this substrate was evaluated by vertical tensile strength, it was 60K O15m.
It was good with mφ.
実施例３
実施例１と同様な方法で作製した絶縁基板を１０００℃
の大気中に１０分間放置し、空冷した。この基板の密着
強度を垂直引張り強度で評価したところ、６０ｋｇ１５
ｍ１φと良好であった。Example 3 An insulating substrate prepared in the same manner as Example 1 was heated to 1000°C.
It was left in the atmosphere for 10 minutes and cooled in the air. When the adhesion strength of this board was evaluated by vertical tensile strength, it was found to be 60kg15
It was good with m1φ.
［比較例３］
比較例１と同様な方法で作製した絶縁基板を９００℃の
大気中に３時間放置し、空冷した。この結果ガラス絶縁
層は金属基体表面から剥がれ落ち、密着強度を垂直引張
り強度で評価することができなかった。このことは、密
着強度が極めて弱いことを示している。[Comparative Example 3] An insulating substrate produced in the same manner as Comparative Example 1 was left in the atmosphere at 900° C. for 3 hours and cooled in air. As a result, the glass insulating layer peeled off from the surface of the metal substrate, making it impossible to evaluate adhesion strength in terms of vertical tensile strength. This shows that the adhesion strength is extremely weak.
図面は本発明の一実施例を示す断面図である。 １・・・金属基体、２・・・ガラス質絶縁物層。 出願人代理人 弁理士 鈴江武彦 The drawing is a sectional view showing an embodiment of the present invention. 1... Metal base, 2... Glassy insulator layer. Applicant's agent: Patent attorney Takehiko Suzue
Claims (17)
属基体の表面に、水素を含む還元雰囲気中で加熱処理し
て形成された鉄酸化物を含まない被膜を介して上記基体
表面の一部又は全部にガラス絶縁層を形成してなる電気
装置用絶縁基板。(1) An iron oxide-free coating formed by heat treatment in a reducing atmosphere containing hydrogen is applied to the surface of a metal substrate made of an iron alloy containing 10 to 30% by weight of chromium. An insulating substrate for an electrical device, which is formed with a glass insulating layer on part or all of the part.
ム０．０５〜７重量％を含む鉄合金である特許請求の範
囲第１項記載の電気装置用絶縁基板。(2) The insulating substrate for an electrical device according to claim 1, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium and 0.05 to 7% by weight of aluminum.
．０５〜５重量％を含む鉄合金である特許請求の範囲第
１項記載の電気装置用絶縁基板。(3) Metal substrate is 10-30% by weight of chromium and 0% silicon
．． The insulating substrate for an electrical device according to claim 1, which is an iron alloy containing 0.05 to 5% by weight.
ム０．０５〜７重量％、チタン０．１〜３重量％を含む
鉄合金である特許請求の範囲第１項記載の電気装置用絶
縁基板。(4) An insulating substrate for an electrical device according to claim 1, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum, and 0.1 to 3% by weight of titanium. .
範囲第１項ないし第４項のいずれか１に記載の電気装置
用絶縁基板。(5) The insulating substrate for an electrical device according to any one of claims 1 to 4, wherein the coating mainly has an amorphous structure.
属基体を水素を含む還元雰囲気中で、鉄酸化物が鉄と酸
素に分解する露点以下で加熱処理して鉄酸化物を含まな
い被膜を形成し、次いでこの基体表面の一部又は全部に
ガラス絶縁層を形成する電気装置用絶縁基板の製造方法
。(6) A metal substrate made of an iron alloy containing 10 to 30% by weight of chromium is heat-treated in a reducing atmosphere containing hydrogen at a temperature below the dew point at which iron oxide decomposes into iron and oxygen to form a coating that does not contain iron oxide. A method for manufacturing an insulating substrate for an electrical device, which comprises forming a glass insulating layer on part or all of the surface of the substrate.
範囲第６項記載の電気装置用絶縁基板の製造方法。(7) The method for manufacturing an insulating substrate for an electrical device according to claim 6, wherein the coating mainly has an amorphous structure.
ム０．０５〜７重量％を含む鉄合金である特許請求の範
囲第６項記載の電気装置用絶縁基板の製造方法。(8) The method for manufacturing an insulating substrate for an electrical device according to claim 6, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium and 0.05 to 7% by weight of aluminum.
ム０．０５〜７重量％を含む鉄合金であり、加熱処理を
鉄酸化物、クロム酸化物および鉄クロム酸化物がそれぞ
れ分解する露点以下でおこなう特許請求の範囲第６項記
載の電気装置用絶縁基板の製造方法。(9) The metal substrate is an iron alloy containing 10 to 30% by weight of chromium and 0.05 to 7% by weight of aluminum, and the heat treatment is performed at a temperature below the dew point at which iron oxide, chromium oxide, and iron chromium oxide decompose, respectively. A method of manufacturing an insulating substrate for an electrical device according to claim 6.
．０５〜５重量％を含む鉄合金である特許請求の範囲第
６項記載の電気装置用絶縁基板の製造方法。(10) Metal substrate has 10 to 30% chromium and 0 silicon
．． 7. The method of manufacturing an insulating substrate for an electrical device according to claim 6, wherein the iron alloy contains 0.05 to 5% by weight.
０．０５〜５重量％を含む鉄合金で、加熱処理を鉄酸化
物、クロム酸化物および鉄クロム酸化物がそれぞれ分解
する露点以下でおこなう特許請求の範囲第６項記載の電
気装置用絶縁基板の製造方法。(11) The metal base is an iron alloy containing 10 to 30% by weight of chromium and 0.05 to 5% by weight of silicon, and the heat treatment is performed below the dew point at which iron oxide, chromium oxide, and iron chromium oxide decompose, respectively. A method for manufacturing an insulating substrate for an electrical device according to claim 6.
ウム０．０５〜７重量％、チタン０．１〜３重％を含む
鉄合金である特許請求の範囲第６項記載の電気装置用絶
縁基板の製造方法。(12) An insulating substrate for an electrical device according to claim 6, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum, and 0.1 to 3% by weight of titanium. manufacturing method.
ム０．０５〜７重量％、チタン０．１〜３重％を含む鉄
合金で、熱処理を鉄酸化物、クロム酸化物および鉄クロ
ム酸化物がそれぞれ分解する露点以下でおこなう特許請
求の範囲第６項記載の電気装置用絶縁基板の製造方法。(13) The metal substrate is an iron alloy containing 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum, and 0.1 to 3% by weight of titanium, and the heat treatment is performed with iron oxide, chromium oxide, and iron chromium oxide. 7. The method of manufacturing an insulating substrate for an electrical device according to claim 6, wherein the manufacturing method is carried out at a temperature below the dew point at which each decomposes.
る特許請求の範囲第６項記載の電気装置用絶縁基板の製
造方法。(14) The method for manufacturing an insulating substrate for an electrical device according to claim 6, wherein the gas containing hydrogen is a mixed gas of hydrogen and nitrogen.
である特許請求の範囲第６項乃至第１４項のいずれか１
に記載の電気装置用絶縁基板の製造方法。(15) Any one of claims 6 to 14, wherein the gas in the atmosphere containing hydrogen has a dew point of -20°C or lower.
A method for manufacturing an insulating substrate for an electrical device according to .
下である特許請求の範囲第１５項記載の電気装置用絶縁
基板の製造方法。(16) The method for manufacturing an insulating substrate for an electrical device according to claim 15, wherein the hydrogen-containing gas has a dew point of -40°C or lower.
の範囲第８項ないし第１６項のいずれか１に記載の電気
装置用絶縁基板の製造方法。(17) The method for manufacturing an insulating substrate for an electrical device according to any one of claims 8 to 16, wherein the coating mainly has an amorphous structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30375687A JPH01145887A (en) | 1987-12-01 | 1987-12-01 | Insulating substrate for electric device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30375687A JPH01145887A (en) | 1987-12-01 | 1987-12-01 | Insulating substrate for electric device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01145887A true JPH01145887A (en) | 1989-06-07 |
Family
ID=17924895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30375687A Withdrawn JPH01145887A (en) | 1987-12-01 | 1987-12-01 | Insulating substrate for electric device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01145887A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0436499A (en) * | 1990-05-31 | 1992-02-06 | Nippon Kinzoku Co Ltd | Production of electrical insulating substrate for insulating device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5344871A (en) * | 1976-10-04 | 1978-04-22 | Tokyo Shibaura Electric Co | Electric device substrate |
| JPS5636597A (en) * | 1979-09-04 | 1981-04-09 | Lion Corp | Liquid detergent composition |
-
1987
- 1987-12-01 JP JP30375687A patent/JPH01145887A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5344871A (en) * | 1976-10-04 | 1978-04-22 | Tokyo Shibaura Electric Co | Electric device substrate |
| JPS5636597A (en) * | 1979-09-04 | 1981-04-09 | Lion Corp | Liquid detergent composition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0436499A (en) * | 1990-05-31 | 1992-02-06 | Nippon Kinzoku Co Ltd | Production of electrical insulating substrate for insulating device |
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