JPH0297687A - Production of enameled substrate - Google Patents
Production of enameled substrateInfo
- Publication number
- JPH0297687A JPH0297687A JP24976088A JP24976088A JPH0297687A JP H0297687 A JPH0297687 A JP H0297687A JP 24976088 A JP24976088 A JP 24976088A JP 24976088 A JP24976088 A JP 24976088A JP H0297687 A JPH0297687 A JP H0297687A
- Authority
- JP
- Japan
- Prior art keywords
- metal core
- frit
- core
- coating film
- oxide coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract description 17
- 238000004519 manufacturing process Methods 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000002002 slurry Substances 0.000 claims abstract description 6
- 238000004070 electrodeposition Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002320 enamel (paints) Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業−トの利用分野〉
本発明は金属基板の表面にホウロウがけを行った印刷回
路基板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Field of Industrial Application> The present invention relates to a method of manufacturing a printed circuit board in which the surface of a metal substrate is enameled.
〈従来の技術〉
ホウロウ基板は特に大型化が容易であると共に、セラミ
ック基板より低価格で、加工成形が簡単で、通常のセラ
ミック基板(アルミナ)に比べて放熱性が良いなどの特
徴を有することから近年各方面に用いられてきている。<Conventional technology> Enamel substrates are particularly easy to increase in size, are less expensive than ceramic substrates, are easier to process and mold, and have better heat dissipation than ordinary ceramic substrates (alumina). Since then, it has been used in various fields in recent years.
従来一般に行なわれているホウロウ基板は鉄、銅、アル
ミニウムの如き金属芯の表面に結晶質ガラスなどを被覆
し、この上にメタルグレーズ抵抗体を印刷焼成し、回路
パターンを形成していた。Conventional enamel substrates are made by coating the surface of a metal core such as iron, copper, or aluminum with crystalline glass or the like, and then printing and firing a metal glaze resistor to form a circuit pattern.
〈発明が解決すべき課題〉
しかし、このような従来のホウロウ基板に於ては半導体
素子を搭載したICパッケージ等を表面実装したり、ベ
アー(裸)のICチップを直接搭載すると、金属芯とし
て用いられている鉄、アルミ、銅等の熱膨張係数が大き
いために、加熱冷却に伴なう熱応力によって、ICパッ
ケージとの半田接合部やICチップ自体が剥離を生じた
り、割れを発生することが避けられなかった。<Problems to be solved by the invention> However, when an IC package with a semiconductor element is mounted on the surface of such a conventional enamel substrate, or a bare IC chip is directly mounted, the metal core Because the coefficients of thermal expansion of the materials used, such as iron, aluminum, and copper, are large, the solder joints with the IC package and the IC chip itself may peel or crack due to thermal stress caused by heating and cooling. It was inevitable.
そこで、このような熱膨張係数(α)の違いによる問題
を解決するために金属芯にICパッケージやベアのIC
チップのαに合ったαの小さなFe Ni−Cr系合
金を用いることが試みられている。Therefore, in order to solve the problem caused by the difference in the coefficient of thermal expansion (α), IC packages or bare ICs are attached to the metal core.
Attempts have been made to use a FeNi-Cr alloy with a small α that matches the α of the chip.
しかしこのようなFe−Ni −Cr系合金は高温の耐
酸化性に優れるため、焼成温度でホウロウ被覆層と金属
芯との間に強固な密着力が得られないという問題を有し
ている。However, since such Fe-Ni-Cr alloys have excellent high-temperature oxidation resistance, they have a problem in that strong adhesion between the enamel coating layer and the metal core cannot be obtained at the firing temperature.
このため、この欠点を除く方法として、その表面を酸洗
やブラスト処理して粗面化し、密着性を向上することが
試みられている。しかしこの方法は、酸洗、プラスト処
理で手数もかかる他、金属芯の平滑性が失われたり、大
型の基板ではそりを生じ易い問題がある。Therefore, as a method to eliminate this drawback, attempts have been made to roughen the surface by pickling or blasting to improve adhesion. However, this method requires a lot of effort due to pickling and blasting, and also has the problem that the smoothness of the metal core is lost and that large substrates are prone to warping.
本発明はこのような従来の技術の課題を解決したホウロ
ウ基板の製造方法を提供するものである。The present invention provides a method for manufacturing an enamel substrate that solves the problems of the conventional techniques.
〈課題を解決するための手段〉
本発明者らは上述の問題を解決するため、鋭意研究を重
ねた結果高温の耐酸化性に優れた、熱膨張率の小さなF
e−Nt−Cr系合金の金属芯に、予め100Å〜5μ
mの酸化被膜を設け、それをBaO。<Means for Solving the Problems> In order to solve the above-mentioned problems, the present inventors have conducted intensive research and found that F has excellent high-temperature oxidation resistance and has a small coefficient of thermal expansion.
A metal core of e-Nt-Cr alloy is coated with a metal core of 100 Å to 5 μ in advance.
An oxide film of m is provided, and it is coated with BaO.
5in2. MgO、B201を含む結晶化ガラスのフ
リットを分散したスラリー中に浸漬し、泳動電着法にて
電着し、その後高温で焼成することにより、電着上の問
題を生ずることなく、金属芯との間に強固な密着力を有
するホウロウ基板が得られることを見出し、本発明を完
成したものである。5in2. A frit of crystallized glass containing MgO and B201 is immersed in a dispersed slurry, electrophoretically deposited using electrophoretic electrodeposition, and then fired at a high temperature. The present invention was completed based on the discovery that an enameled enamel substrate having strong adhesion between the two layers can be obtained.
く作 用〉
本発明に用いる金属芯は高温酸化性に優れるとともに、
表面実装するICパッケージや、ICチップなどとの熱
膨張係数との差が極めて小さなFe−N1(35〜50
重量%) −Cr(4〜10重量%)の組成を有する合
金であり、その酸化被膜の形成方法としては水素(H2
)と水蒸気とからなる雰囲気中で形成するなど種々の方
法で形成することが出来るが、一般にこのような雰囲気
調整を行う方法では、コスト高になる問題があるため、
通常は大気中で酸化被膜厚さが100Å〜5μmとなる
ように形成する方法が好適に用いられる。Function> The metal core used in the present invention has excellent high-temperature oxidation properties, and
Fe-N1 (35 to 50
-Cr (4 to 10% by weight), and the method for forming the oxide film is hydrogen (H2
) and water vapor, but generally, methods that involve adjusting the atmosphere have the problem of high costs.
Usually, a method is preferably used in which the oxide film is formed in the atmosphere to a thickness of 100 Å to 5 μm.
ここで酸化被膜の厚さを100Å〜5μmに限定する理
由は100人未満では密着性の改善効果が薄く、5μm
を越えると浮き錆が発生し易くなり、逆に密着力が低下
し、剥離を生じ易くなるからである。Here, the reason why the thickness of the oxide film is limited to 100 Å to 5 μm is that if there are fewer than 100 people, the effect of improving adhesion will be weak;
This is because if it exceeds this, floating rust is likely to occur, and on the contrary, adhesion is reduced and peeling is likely to occur.
このようにしてFe−N1(35〜50重量%) −C
r(4〜10重量%)の金属芯の表面に、厚さ100Å
〜5μmに形成させた酸化被膜は基材の金属芯に対する
密着性に優れるとともに゛、これを被塗物としてBaO
、Stow、 MgO、B2O3を含む結晶化ガラスを
イソプロパツールなどの有機溶媒中に分散したスラリー
中に浸漬し、泳動電着を行うと電着上の問題を生ずるこ
となく均一に電着される。In this way, Fe-N1 (35-50% by weight) -C
r (4 to 10% by weight) on the surface of a metal core with a thickness of 100 Å.
The oxide film formed to a thickness of ~5 μm has excellent adhesion to the metal core of the base material.
, Stow, When crystallized glass containing MgO and B2O3 is immersed in a slurry dispersed in an organic solvent such as isopropanol and subjected to electrophoretic electrodeposition, it can be uniformly electrodeposited without causing any electrodeposition problems. .
又、電着後の被塗物は通常の方法で達成することにより
、金属芯の表面に形成された密着性の良い酸化被膜を介
してホウロウ被覆層との間に強固な結合が得られるから
、密着性に優れた熱膨張率の小さなホウロウ基板が得ら
れる。In addition, by applying the conventional method to the coated object after electrodeposition, a strong bond can be obtained with the enamel coating layer through the highly adhesive oxide film formed on the surface of the metal core. , an enamel substrate with excellent adhesion and a small coefficient of thermal expansion can be obtained.
〈実施例〉
以下に本発明の内容を実施例により、具体的に説明する
。<Example> The content of the present invention will be specifically explained below with reference to Examples.
熱膨張率係数の小さな第1表に示した実施例1〜4の組
成のFe−Ni−Cr系合金の金属芯を用いて、大気中
で900℃に加熱し、Fe2O,と仮定した酸化被膜の
厚さが200Å〜3μmとなる様に表面を酸化させた。Using a metal core of Fe-Ni-Cr alloy having a small coefficient of thermal expansion and having the composition of Examples 1 to 4 shown in Table 1, it was heated to 900°C in the atmosphere to form an oxide film, which was assumed to be Fe2O. The surface was oxidized to a thickness of 200 Å to 3 μm.
次いでBaO−Mg0−B、0l−5iOz系の結晶化
ガラスのフリット(最大粒子径30μm以下)を分散さ
せたスラリー中で焼成後厚さが約200 μmとなるよ
うに電着させたところ、肌荒れのない平滑な表面を有す
る塗覆層が得られた。次にこれを最高温度850°Cの
連続炉に入れ焼成したところ表面欠陥のない平滑な表面
のホウロウ基板が得られた。Next, when electrodeposition was performed in a slurry in which BaO-Mg0-B, 0l-5iOz-based crystallized glass frits (maximum particle size 30 μm or less) were dispersed to a thickness of about 200 μm after firing, the surface was rough. A coating layer with a smooth surface free of cracks was obtained. Next, this was fired in a continuous furnace at a maximum temperature of 850°C, and an enameled substrate with a smooth surface without surface defects was obtained.
これらについてJIS R4301による電着性テスト
を行うとともに、ICパッケージを実装した後−15℃
〜150℃の温度範囲で熱サイクルテストを1000回
行い、接続部の割れの有無を調べた。これらの結果とホ
ウロウ層の形成前後の熱膨張係数について調べた結果を
まとめて示すと第1表の通りである。又これとは別に比
較のため、第1表の比較例1〜5の金属芯について本発
明の適正範囲からはずれる100Å以下と10μm以上
に酸化被膜を形成し、実施例と同様に電着焼成し、得ら
れた基板について実施例と同様の特性評価を行った。得
られた結果は第1表の通りである。We conducted an electrodeposition test on these according to JIS R4301, and after mounting the IC package, we tested them at -15°C.
A thermal cycle test was conducted 1,000 times in a temperature range of ~150°C to check for cracks in the joints. Table 1 summarizes these results and the results of examining the thermal expansion coefficients before and after the formation of the enamel layer. Separately, for comparison, oxide films were formed on the metal cores of Comparative Examples 1 to 5 in Table 1 at a thickness of 100 Å or less and 10 μm or more, which are outside the appropriate range of the present invention, and electrodeposited and fired in the same manner as in the examples. The characteristics of the obtained substrate were evaluated in the same manner as in the examples. The results obtained are shown in Table 1.
これらの結果から明らかな様に本発明の実施例1〜4に
於ける熱膨張率の小さな金属芯に予め200Å〜3μm
の酸化被膜を設け、この表面にBaO−MgO−820
3−3i02系の結晶化ガラスフリフトを電着し、焼成
した基板は密着性、に優れるとともに全体の熱膨張係数
が小さいから、この上にICパッケージを実装した場合
にも、ヒートサイクルによってICパッケージとの半田
接合部に割れを生じたりして剥離する様な問題が出ない
ことが分る。As is clear from these results, in Examples 1 to 4 of the present invention, the metal core with a small coefficient of thermal expansion had a thickness of 200 Å to 3 μm.
An oxide film of BaO-MgO-820 is provided on the surface.
A substrate made by electrodepositing and firing 3-3i02 series crystallized glass lift has excellent adhesion and has a small overall coefficient of thermal expansion, so even when an IC package is mounted on it, the IC can be easily removed by heat cycles. It can be seen that there are no problems such as cracking or peeling at the solder joint with the package.
これに対し、比較例1.2のように酸化被膜の形成厚さ
が100Å以下の場合や比較例3の様に適正厚さの5μ
m以上に酸化被膜を形成された場合には充分な密着性が
得られないことが分る。On the other hand, when the thickness of the oxide film is 100 Å or less as in Comparative Example 1.2, or when the appropriate thickness is 5 μ as in Comparative Example 3,
It can be seen that sufficient adhesion cannot be obtained when the oxide film is formed in a thickness greater than m.
〈発明の効果〉
以上詳述した様に本発明の方法によれば、極めて簡単な
方法で電着上の問題を生ずることなく高温酸化性に優れ
た低膨脹率の金属芯に対し、Bad。<Effects of the Invention> As detailed above, according to the method of the present invention, a metal core having a low expansion coefficient and excellent high-temperature oxidation property can be produced using an extremely simple method without causing any electrodeposition problems.
MgO、B!ot、 SiO□を含む、結晶化ガラスの
被覆層を優れた密着状態で形成させることが出来るから
、基板上にICパッケージを実装したり、ICチップを
直接搭載して用いることが出来るなど、極めて利用価値
の高いものである。MgO, B! Since it is possible to form a coating layer of crystallized glass containing SiO□ with excellent adhesion, it is possible to mount an IC package on a substrate or use it by directly mounting an IC chip. It has high utility value.
代理人 弁理士 竹 内 守Agent Patent Attorney Mamoru Takeuchi
Claims (1)
0重量%)からなる金属芯の表面に厚さ100Å〜5μ
mの酸化被膜を設けた後、BaO,SiO_2,MgO
,B_2O_3を含む結晶化ガラスのフリットを分散し
たスラリー中に浸漬し、泳動電着法にて電着し、焼成す
ることを特徴とするホウロウ基板の製造方法。(1) Fe-Ni (35-50% by weight)-Cr (4-1
0% by weight) on the surface of a metal core with a thickness of 100 Å to 5 μ
After forming an oxide film of m, BaO, SiO_2, MgO
, B_2O_3 is immersed in a slurry in which a frit of crystallized glass containing B_2O_3 is dispersed, electrodeposited by electrophoretic electrodeposition, and fired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24976088A JPH0297687A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24976088A JPH0297687A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0297687A true JPH0297687A (en) | 1990-04-10 |
Family
ID=17197822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24976088A Pending JPH0297687A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0297687A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990260A (en) * | 1988-01-28 | 1991-02-05 | The Water Group, Inc. | Method and apparatus for removing oxidizable contaminants in water to achieve high purity water for industrial use |
JPH0436499A (en) * | 1990-05-31 | 1992-02-06 | Nippon Kinzoku Co Ltd | Production of electrical insulating substrate for insulating device |
US5679464A (en) * | 1992-03-31 | 1997-10-21 | Nippon Steel Corporation | Joined product of heat-resisting alloys and method for joining heat-resisting alloys |
EP1003695A1 (en) * | 1997-08-11 | 2000-05-31 | Colorobbia Italia S.p.a. | Glass-ceramics process for their preparation and use |
-
1988
- 1988-10-05 JP JP24976088A patent/JPH0297687A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990260A (en) * | 1988-01-28 | 1991-02-05 | The Water Group, Inc. | Method and apparatus for removing oxidizable contaminants in water to achieve high purity water for industrial use |
JPH0436499A (en) * | 1990-05-31 | 1992-02-06 | Nippon Kinzoku Co Ltd | Production of electrical insulating substrate for insulating device |
US5679464A (en) * | 1992-03-31 | 1997-10-21 | Nippon Steel Corporation | Joined product of heat-resisting alloys and method for joining heat-resisting alloys |
EP1003695A1 (en) * | 1997-08-11 | 2000-05-31 | Colorobbia Italia S.p.a. | Glass-ceramics process for their preparation and use |
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