JPH0297686A - Production of enameled substrate - Google Patents
Production of enameled substrateInfo
- Publication number
- JPH0297686A JPH0297686A JP24975988A JP24975988A JPH0297686A JP H0297686 A JPH0297686 A JP H0297686A JP 24975988 A JP24975988 A JP 24975988A JP 24975988 A JP24975988 A JP 24975988A JP H0297686 A JPH0297686 A JP H0297686A
- Authority
- JP
- Japan
- Prior art keywords
- metal core
- frit
- core
- coating film
- oxide coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 210000003298 dental enamel Anatomy 0.000 claims abstract description 10
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- 238000004070 electrodeposition Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 2
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002320 enamel (paints) Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は金属基板の表面にホウロウがけを行った印刷回
路基板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing a printed circuit board in which the surface of a metal substrate is enameled.
〈従来の技術〉
ホウロウ基板は特に大型化が容易であると共に、セラミ
ック基板より低価格で、加工成形が簡単で、通常のセラ
ミック基板(アルミナ)に比べて放熱性が良いなどの特
徴を有することから近年各方面に用いられてきている。<Conventional technology> Enamel substrates are particularly easy to increase in size, are less expensive than ceramic substrates, are easier to process and mold, and have better heat dissipation than ordinary ceramic substrates (alumina). Since then, it has been used in various fields in recent years.
従来一般に行なわれているホウロウ基板は鉄、銅、アル
ミニウムの如き金属芯の表面に結晶質ガラスなどを被覆
し、この上にメタルグレーズ抵抗体を印刷焼成し、回路
パターンを形成していた。Conventional enamel substrates are made by coating the surface of a metal core such as iron, copper, or aluminum with crystalline glass or the like, and then printing and firing a metal glaze resistor to form a circuit pattern.
〈発明が解決すべき課題〉
しかし、このような従来のホウロウ基板に於ては半導体
素子を搭載したICパッケージ等を表面実装したり、ベ
アー(裸)のICチップを直接搭載すると、金属芯とし
て用いられている鉄、アルミ、銅等の熱膨張係数が大き
いために、加熱冷却に伴なう熱応力によって、ICパッ
ケージとの半田接合部やICチップ自体が剥離を生じた
り、割れを発生することが避けられなかった。<Problems to be solved by the invention> However, when an IC package with a semiconductor element is mounted on the surface of such a conventional enamel substrate, or a bare IC chip is directly mounted, the metal core Because the coefficients of thermal expansion of the materials used, such as iron, aluminum, and copper, are large, the solder joints with the IC package and the IC chip itself may peel or crack due to thermal stress caused by heating and cooling. It was inevitable.
そこで、このような熱膨張係数(α)の違いによる問題
を解決するために金属芯にICパッケージや″ベアのI
Cチップのαに合ったαの小さなPe−Ni系合金を用
いることが試みられている。Therefore, in order to solve the problem caused by the difference in thermal expansion coefficient (α), an IC package or a ``bare IC'' is attached to the metal core.
Attempts have been made to use a Pe--Ni alloy with a small α that matches the α of the C chip.
しかしこのようなFe−Ni系合金は高温の耐酸化性に
優れるため、焼成温度でホウロウ被覆層と金属芯との間
に強固な密着力が得られないという問題を有している。However, since such Fe-Ni alloys have excellent high-temperature oxidation resistance, they have a problem in that strong adhesion cannot be obtained between the enamel coating layer and the metal core at the firing temperature.
このため、この欠点を除く方法として、その表面を酸洗
やプラスト処理して粗面化し、密着性を向上することが
試みられている。しかしこの方法は、酸洗、ブラスト処
理で手数もかかる他、金属芯の平滑性が失われたり、大
型の基板ではそりを生じ易い問題がある。Therefore, as a method to eliminate this drawback, attempts have been made to roughen the surface by pickling or blasting to improve adhesion. However, this method requires a lot of effort due to pickling and blasting, and also has the problem that the smoothness of the metal core may be lost, and large substrates are likely to warp.
本発明はこのような従来の技術の課題を解決したホウロ
ウ基板の製造方法を提供するものである。The present invention provides a method for manufacturing an enamel substrate that solves the problems of the conventional techniques.
〈課題を解決するための手段〉
本発明者らは上述の問題を解決するため、鋭意研究を重
ねた結果高温の耐酸化性に優れた、熱膨張率の小さなF
e−Ni系合金の金属芯に、予め100Å〜5μmの酸
化被膜を設け、それをBaO、SiO2MgO、B、O
,を含む結晶化ガラスのフリットを分散したスラリー中
に浸漬し、泳動電着法にて電着し、その後高温で焼成す
ることにより、電着上の問題を生ずることなく、金属芯
との間に強固な密着力を有するホウロウ基板が得られる
ことを見出し、本発明を完成したものである。<Means for Solving the Problems> In order to solve the above-mentioned problems, the present inventors have conducted intensive research and found that F has excellent high-temperature oxidation resistance and has a small coefficient of thermal expansion.
An oxide film of 100 Å to 5 μm is provided in advance on the metal core of the e-Ni alloy, and it is coated with BaO, SiO2MgO, B, O.
By immersing a frit of crystallized glass containing . The present invention was completed based on the discovery that an enamel substrate with strong adhesion can be obtained.
く作 用〉
本発明に用いる金属芯は高温酸化性に優れるとともに、
表面実装するICパッケージや、ICチップなどとの熱
膨張係数との差が極めて小さなPe−Ni(35〜50
重量%)の組成を有する合金であり、その酸化被膜の形
成方法としては水素(ト)と水蒸気とからなる雰囲気中
で形成するなど種々の方法で形成することが出来るが、
一般にこのような雰囲気調整を行う方法では、コスト高
になる問題があるため、通常は大気中で酸化被膜厚さが
100Å〜IOμmとなるように形成する方法が好適に
用いられる。Function> The metal core used in the present invention has excellent high-temperature oxidation properties, and
Pe-Ni (35-50
It is an alloy with a composition of
Generally, such a method of adjusting the atmosphere has the problem of high cost, so a method of forming the oxide film in the atmosphere to a thickness of 100 Å to IO μm is usually preferably used.
ここで酸化被膜の厚さを100Å〜5μmに限定する理
由は100人未満では密着性の改善効果が薄く、5μm
を越えると浮き錆が発生し易くなり、逆に密着力が低下
し、剥離を生じ易くなるからである。Here, the reason why the thickness of the oxide film is limited to 100 Å to 5 μm is that if there are fewer than 100 people, the effect of improving adhesion will be weak;
This is because if it exceeds this, floating rust is likely to occur, and on the contrary, adhesion is reduced and peeling is likely to occur.
このようにしてFe−Ni(35〜50重量%)の金属
芯の表面に、厚さ100Å〜5μmに形成させた酸化被
膜は基材の金属芯に対する密着性に優れるとともに、こ
れを被替物としてBaO、SiO2,MgO。The oxide film formed in this way to a thickness of 100 Å to 5 μm on the surface of the Fe-Ni (35 to 50% by weight) metal core has excellent adhesion to the metal core of the base material, and can be used as a substitute. As BaO, SiO2, MgO.
B、0.を含む結晶化ガラスをイソ−プロパツールなど
の有機溶媒中に分散したスラリー中に浸漬し、泳動電着
を行うと電着上の問題を生ずることなく均一に電着され
る。B, 0. When electrophoretic electrodeposition is performed by immersing a crystallized glass containing a mixture in a slurry dispersed in an organic solvent such as iso-propanol, uniform electrodeposition can be achieved without causing any electrodeposition problems.
又、電着後の被塗物は通常の方法で焼成することにより
、金属芯の表面に形成された密着性の良い酸化被膜を介
してホウロウ被覆層との間に強固な結合が得られるから
、密着性に優れた熱膨張、率の小さなホウロウ基板が得
られる。In addition, by firing the object to be coated after electrodeposition using the usual method, a strong bond can be obtained between the coated material and the enamel coating layer through the highly adhesive oxide film formed on the surface of the metal core. , an enamel substrate with excellent adhesion and a small coefficient of thermal expansion can be obtained.
〈実施例〉
以下に本発明の内容を実施例により、具体的に説明する
。<Example> The content of the present invention will be specifically explained below with reference to Examples.
熱膨脹率係数の小さな第1表に示した実施例1〜4の組
成のFe−Ni系合金の金属芯を用いて、大気中で90
0℃に加熱し、Fe、10.と仮定した酸化被膜の厚さ
が200Å〜3μmとなる様に表面を酸化させた。Using a metal core made of an Fe-Ni alloy having a composition of Examples 1 to 4 shown in Table 1 with a small coefficient of thermal expansion,
Heating to 0°C, Fe, 10. The surface was oxidized so that the thickness of the oxide film was assumed to be 200 Å to 3 μm.
次いでBaO−Mg0−BzOs−SiOx系の結晶化
ガラスのフリット(最大粒子径30μm以下)を分散さ
せたスラリー中で焼成後厚さが約200.17mとなる
様に電着させたところ、肌荒れのない平滑な表面を有す
る塗覆層が得られた。次にこれを最高温度850℃の連
続炉に入れ焼成したところ表面欠陥のない平滑な表面の
ホウロウ基板が得られた。Next, electrodeposition was performed in a slurry in which BaO-Mg0-BzOs-SiOx-based crystallized glass frits (maximum particle size of 30 μm or less) were dispersed to a thickness of about 200.17 m after firing, and no rough skin was observed. A coating layer with a smooth surface was obtained. Next, this was fired in a continuous furnace at a maximum temperature of 850°C, and an enameled substrate with a smooth surface without surface defects was obtained.
これらについてJIS R4301による電着性テスト
を行うと共に、ICパッケージを実装した後−55℃〜
150℃の温度範囲で熱サイクルテストを1000回行
い、接続部の割れの有無を調べた。これらの結果とホウ
ロウ層の形成前後の熱膨張係数について調べた結果をま
とめて示すと第1表の通りである。又これとは別に比較
のため、第1表の比□較例1〜4の金属芯について本発
明の適正範囲からはずれる100Å以下と5μm以上に
酸化被膜を形成し、実施例と同様に電着焼成し、得られ
た基板について実施例と同様の特性評価を行った。得ら
れた結果は第1表の通りである。We conducted an electrodeposition test on these according to JIS R4301, and after mounting the IC package, we tested them at -55℃~
A thermal cycle test was conducted 1,000 times in a temperature range of 150°C to check for cracks in the joints. Table 1 summarizes these results and the results of examining the thermal expansion coefficients before and after the formation of the enamel layer. Separately, for comparison, oxide films were formed on the metal cores of Comparative Examples 1 to 4 in Table 1 below 100 Å and above 5 μm, which are outside the appropriate range of the present invention, and then electrodeposited in the same manner as in the examples. After firing, the obtained substrate was evaluated for characteristics in the same manner as in the examples. The results obtained are shown in Table 1.
これらの結果から明らかな様に本発明の実施例1〜4に
於ける熱膨脹率の小さな金属芯に予め200Å〜3μm
の酸化被膜を設け、この表面にBaO−MgO−820
,1−3i02系の結晶化ガラスフリットを電着し、焼
成した基板は密着性に優れると共に全体の熱膨張係数が
小さいから、この上にICパッケージを実装した場合に
も、ヒートサイクルによってICパッケージとの半田接
合部に割れを生じたりして剥離する様な問題が出ないこ
とが分る。As is clear from these results, in Examples 1 to 4 of the present invention, the metal core with a small coefficient of thermal expansion had a thickness of 200 Å to 3 μm.
An oxide film of BaO-MgO-820 is provided on this surface.
, 1-3i02 series crystallized glass frit is electrodeposited and fired, and the substrate has excellent adhesion and a small overall coefficient of thermal expansion, so even when an IC package is mounted on it, the IC package will shrink due to heat cycles. It can be seen that there are no problems such as cracking or peeling of the solder joints.
これに対し、比較例2,4の様に酸化被膜の形成厚さが
100Å以下の場合や比較例1.3の様に適正厚さの5
μm以上に酸化被膜を形成された場合には充分な密着性
が得られないことが分る。On the other hand, when the thickness of the oxide film is 100 Å or less as in Comparative Examples 2 and 4, or when the appropriate thickness is 5 Å as in Comparative Example 1.3,
It can be seen that sufficient adhesion cannot be obtained when the oxide film is formed to a thickness of μm or more.
〈発明の効果〉
以上詳述した様に本発明の方法によれば、極めて簡単な
方法で電着上の問題を生ずることなく高温酸化性に優れ
た低膨脹率の金属芯に対し、BaO。<Effects of the Invention> As detailed above, according to the method of the present invention, BaO can be deposited on a metal core with a low expansion coefficient and excellent high-temperature oxidation properties using an extremely simple method without causing any electrodeposition problems.
MgO、Bz(h、 SiO□を含む、結晶化ガラスの
被覆層を優れた密着状態で形成させることが出来るから
、基板上にICパッケージを実装したり、ICチップを
直接搭載して用いることが出来るなど、極めて利用価値
の高いものである。Since it is possible to form a coating layer of crystallized glass containing MgO, Bz(h, SiO□) with excellent adhesion, it is possible to mount an IC package on a substrate or use it by directly mounting an IC chip. It is extremely useful.
代理人 弁理士 竹 内 守Agent Patent Attorney Mamoru Takeuchi
Claims (1)
の表面に厚さ100Å〜5μmの酸化被膜を設けた後、
BaO,SiO_2,MgO,B_2O_3を含む結晶
化ガラスのフリットを分散したスラリー中に浸漬し、泳
動電着法にて電着し、焼成することを特徴とするホウロ
ウ基板の製造方法。(1) After providing an oxide film with a thickness of 100 Å to 5 μm on the surface of a metal core made of Fe-Ni (35 to 50% by weight),
A method for manufacturing an enamel substrate, which comprises immersing a frit of crystallized glass containing BaO, SiO_2, MgO, and B_2O_3 in a slurry in which the frit is dispersed, electrodepositing it by electrophoretic electrodeposition, and firing it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24975988A JPH0297686A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24975988A JPH0297686A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0297686A true JPH0297686A (en) | 1990-04-10 |
Family
ID=17197807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24975988A Pending JPH0297686A (en) | 1988-10-05 | 1988-10-05 | Production of enameled substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0297686A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990260A (en) * | 1988-01-28 | 1991-02-05 | The Water Group, Inc. | Method and apparatus for removing oxidizable contaminants in water to achieve high purity water for industrial use |
WO1996027694A1 (en) * | 1995-03-08 | 1996-09-12 | Tocalo Co., Ltd. | Member having composite coating and process for producing the same |
US5679464A (en) * | 1992-03-31 | 1997-10-21 | Nippon Steel Corporation | Joined product of heat-resisting alloys and method for joining heat-resisting alloys |
JP2011003841A (en) * | 2009-06-22 | 2011-01-06 | Kyocera Corp | Method of manufacturing wiring board, and wiring board |
-
1988
- 1988-10-05 JP JP24975988A patent/JPH0297686A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990260A (en) * | 1988-01-28 | 1991-02-05 | The Water Group, Inc. | Method and apparatus for removing oxidizable contaminants in water to achieve high purity water for industrial use |
US5679464A (en) * | 1992-03-31 | 1997-10-21 | Nippon Steel Corporation | Joined product of heat-resisting alloys and method for joining heat-resisting alloys |
WO1996027694A1 (en) * | 1995-03-08 | 1996-09-12 | Tocalo Co., Ltd. | Member having composite coating and process for producing the same |
GB2313847A (en) * | 1995-03-08 | 1997-12-10 | Tocalo Co Limited | Member having composite coating and process for producing the same |
GB2313847B (en) * | 1995-03-08 | 1998-12-09 | Tocalo Co Ltd | Member having composite coating and process for producing the same |
US6129994A (en) * | 1995-03-08 | 2000-10-10 | Tocalo Co., Ltd. | Member having composite coating and process for producing the same |
JP2011003841A (en) * | 2009-06-22 | 2011-01-06 | Kyocera Corp | Method of manufacturing wiring board, and wiring board |
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