JPH01140823U - - Google Patents
Info
- Publication number
- JPH01140823U JPH01140823U JP3751288U JP3751288U JPH01140823U JP H01140823 U JPH01140823 U JP H01140823U JP 3751288 U JP3751288 U JP 3751288U JP 3751288 U JP3751288 U JP 3751288U JP H01140823 U JPH01140823 U JP H01140823U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- temperature
- temperature sensor
- plasma etching
- heating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000000498 cooling water Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の実施例１を示す縦断面図、第
２図は実施例２の縦断面図、第３図は従来のプラ
ズマエツチング装置におけるエツチング処理室周
辺の縦断面図である。
１……エツチング処理室、２……上部電極板、
３……ステージ、４……半導体基板、５ａ，５ｂ
……温度センサー、６ａ，６ｂ……発熱体、７…
…温度コントローラ、８……冷却水源、９……冷
却リング、１０……冷却水ストツプ弁。
FIG. 1 is a vertical cross-sectional view showing a first embodiment of the present invention, FIG. 2 is a vertical cross-sectional view of a second embodiment, and FIG. 3 is a vertical cross-sectional view of the vicinity of an etching chamber in a conventional plasma etching apparatus. 1... Etching processing chamber, 2... Upper electrode plate,
3...Stage, 4...Semiconductor substrate, 5a, 5b
...Temperature sensor, 6a, 6b...Heating element, 7...
...Temperature controller, 8...Cooling water source, 9...Cooling ring, 10...Cooling water stop valve.
Claims (1)
チング装置において、半導体基板搭載用ステージ
面に、半導体基板の温度をモニターする温度セン
サと、該温度センサの出力に基いて温度調整され
る発熱体とを有することを特徴とするプラズマエ
ツチング装置。 A plasma etching apparatus for etching a semiconductor substrate is characterized by having a temperature sensor for monitoring the temperature of the semiconductor substrate on a stage surface for mounting the semiconductor substrate, and a heating element whose temperature is adjusted based on the output of the temperature sensor. Plasma etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3751288U JPH01140823U (en) | 1988-03-22 | 1988-03-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3751288U JPH01140823U (en) | 1988-03-22 | 1988-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140823U true JPH01140823U (en) | 1989-09-27 |
Family
ID=31264092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3751288U Pending JPH01140823U (en) | 1988-03-22 | 1988-03-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140823U (en) |
-
1988
- 1988-03-22 JP JP3751288U patent/JPH01140823U/ja active Pending