JPH01136338A - Apparatus and method for manufacturing semiconductor element - Google Patents

Abstract

PURPOSE:To decrease steps to a large extent and to save manufacturing time and cost, by projecting an energy beam on a semiconductor substrate, on which a film body is formed, in a reacting gas atmosphere for etching, and etching the film body at the projected part. CONSTITUTION:An SiO2 film 2 to be patterned is formed on an Si substrate 1. The substrate 1 is introduced into an etching box 7 and mounted on a plate shaped cooling device 11, whose temperature is set at a specified temperature. HF gas is introduced through a port (1) 9 and discharged through a port (2) 9a. Thus, a dynamic or static HF gas atmosphere 10 is formed in the etching box 7. Then a halogen lamp 12 is lit and infrared rays (a) are emitted and made to pass through a lens 13. Then parallel infrared rays (b) are formed. The parallel infrared rays (b) are made to pass through a pattern 14, which is provided in a mask 15. Only the infrared rays (c), which are the part of (b), are projected on the surface of the SiO2 film 2 through a quartz plate 8 of the etching box 7. The partial etching of the SiO2 film 2 is made to progress by this operation, and the SiO2 film at this part is removed. Patterning having the same size as the pattern 14 is performed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an apparatus and method for manufacturing semiconductor elements manufactured by applying photographic technology.

[Prior Art] Various photoetching methods have been used to apply photolithography to achieve high integration in the manufacture of semiconductor devices, such as MO8LSIs.
The technology is widely used.

Here, Sl
A conventional example of photoetching used to remove O□ will be sequentially explained with reference to process flow diagrams ① to ② shown in cross-sectional explanatory views in Fig. 3.

■ A photosensitive layer made of photoresist 3 is applied onto the 810° film 2 formed on the 81 substrate 1, and the photoresist 3
coating.

(2) After a mask 4 having a pattern 5 necessary for impurity diffusion is brought into close contact with the photoresist 3, the entire surface is irradiated with ultraviolet rays to expose the photoresist 3.

■ When the resist 3 on the 81 substrate 1 is developed, only the exposed portion 6 of the photoresist 3 remains, and the unexposed portion of the photoresist 3 is melted away, leaving the photoresist 3 with 8102
Opening portions 5a of the pattern 5 are formed where the film 2 is exposed.

■ Next, photoresist 3 and 81 are insoluble in substrate 1.
10□2 is treated with a soluble chemical to etch and remove the 5IO2 film in the opening portion 5a, forming pattern 5.
form b.

■ Finally, the SI substrate 1 and the SiO2 film 2 are treated with a chemical that is insoluble and the photoresist 3 is soluble, and the remaining photoresist film 4 is
is removed to form an SiO2 film 2 having openings in a pattern 5b on the 81 substrate 1.

The above is the photo-etching process of the 5102 film by the conventional method, and the subsequent device manufacturing process is omitted, but the process of diffusing impurities into the 81 substrate under the opening 5b using the 810° film 2 as a mask in the normal manufacturing process and the subsequent process are omitted. This process goes into the process.

[Problems to be solved by the invention] In the conventional photoetching method as described above, there are five steps: resist coating, exposure, development, etching, and resist film removal, which requires a lot of time and many types of equipment. There was a problem.

This invention was made to solve the above-mentioned problems, and in particular, it aims to provide a manufacturing method and apparatus that are excellent in simplifying the process by omitting the step of attaching and detaching the photoresist film. .

[Means for Solving the Problems] A semiconductor device manufacturing apparatus according to the present invention is a sealed device having a plate-shaped cooling device at the inner bottom on which a substrate having a film body such as an insulating film, a semiconductor film, or a metal film is mounted. An energy beam irradiation means consisting of a mold etching box, an energy source, a lens that emits the energy beam emitted from the energy source in parallel toward the substrate, and a mask for forming a pattern on the film body is arranged above the etching box. A window made of an energy beam transmission plate is provided on the top surface of the etching box, and a port is provided for introducing and discharging at least one type of gas into and out of the etching box for etching the portion of the film body irradiated with the energy beam. It is prepared.

Further, a method of manufacturing a semiconductor element according to another aspect of the present invention is carried out using the above-mentioned manufacturing apparatus, in which a substrate having a film body is placed on a plate-shaped cooling device in a closed etching box. After introducing a reactive gas for film etching into the etching box to form a reactive gas atmosphere, an energy beam is irradiated onto the substrate through the mask of the energy irradiation means and the energy transmission window provided on the top surface of the etching box. The above problems can be solved by forming a pattern by etching the film, using a process in which the film is etched, and when etching, a plate-type cooling device is operated as necessary to cool the substrate and the etching is completed. This is the solution.

[Function] In the present invention, dry etching is performed using only a mask without using a photoresist used in photolithography in a normal etching process, and a semiconductor substrate having a film is subjected to an etching reaction. When exposed to a gas atmosphere, when an energy beam such as light is irradiated through a mask to excite the part of the film to be etched, the chemical reaction between the reactant gas and the film substance is more likely to occur in the parts that are hit by the light than in the parts that are not hit. This difference in etching rate promotes the partial etching reaction of the membrane as the reaction rate increases. In this case, when infrared rays are used as an energy beam, by cooling the board with a cooling device, a temperature gradient is created from the boundary between the area that is exposed to the light (high temperature area) and the area that is not illuminated (low temperature area) to the outside of the area that is not illuminated. Therefore, even weak etching in the areas that do not touch the area is uniformly etched without sagging in the vicinity of the above-mentioned boundary.

[Embodiments Embodiment 1] FIG. 1 is an explanatory diagram showing an embodiment of a semiconductor device manufacturing apparatus constituting an etching apparatus for carrying out the manufacturing method of the present invention. In this embodiment, a case will be described in which a 5102 film is patterned.

In FIG. 1, reference numeral 7 denotes a closed type etching box made of resin, and a transparent window made of a quartz plate 8 without distortion is attached to a part or all of the upper surface of the etching box 7. Furthermore, this etching box 7 contains H as a reaction gas for etching.
A port equipped with a valve for introducing or inflowing F gas (
1) A port 9 and an outlet or outflow port (2) 9a are attached to the wall. In this way, the work, Tsuching box 7
HF gas is introduced or flowed into the port (1) 9 and is led out or discharged through the port (2) 9a, so that an HF atmosphere 1O is formed.

A plate-type cooling device 11 is installed horizontally at the inner bottom of the etching box 7, and an 81 substrate 1 on which an S f O2 film 2 to be patterned is formed is placed at a predetermined position. It has become so.

On the other hand, above the etching box 7, there are, for example, halogen lamps 12 that emit infrared rays as energy sources in order from the top.
A lens 13 that emits the energy beam, that is, infrared rays (arrow a) from the halogen lamp 12 downward in parallel as shown by the arrow, and a mask 15 having a transparent pattern 14 for forming a pattern form an optical arrangement. The energy beam irradiation means is arranged to form an energy beam irradiation means.

As mentioned above, this device consists of an energy beam irradiation means and an etching box 7, and parallel infrared rays emitted from a lens 12 are applied to a mask 81 placed in the etching box 7 as shown by an arrow C. 15, the pattern forming part of the 5IO2 film 2 on the St substrate 1 becomes H
An etching apparatus for pattern formation is constructed by arranging the entire system so as to be exposed under an F gas atmosphere 10.

Embodiment 2: Hereinafter, a method of manufacturing a semiconductor element using the apparatus shown in the embodiment of FIG. 1 will be sequentially explained.

■ First, the 81 substrate 1 on which the 5102 film 2 to be patterned has been formed is introduced into the etching box 7 by opening a lid (not shown) provided on the etching box 1, and then placed in the plate type cooling device 11 set at a predetermined temperature. After placing the etching box 7 at a predetermined position, the lid is closed to seal the etching box 7.

■ Next, HF gas is introduced into the etching box from a gas cylinder (not shown) through port (1) 9, and the boat (2)
9a, a dynamic or static HF gas atmosphere 10 is formed in the etching box 7. (In this case, Beau) (1)
When the valves 9 and port (2) 9a remain open, a dynamic atmosphere is created, and when the valves are closed, a static atmosphere is created, but either state may be used. ) After that, the halogen lamp 12 is turned on to emit infrared rays a, and the infrared rays a are passed through the lens 13 to create a parallel infrared ray. Only C is irradiated onto the surface of S 102 H2 through the quartz plate 8 of the etching box 7.

(2) Through the above operations, partial etching of the 5IO2 film 2 proceeds by the parallel infrared C irradiated onto the 5102 film 2, and this portion of the 8102 film 2 is removed to form a pattern of the same size as the pattern 14. With the above, one patterning process with one exposure is completed.
Then move on to the subsequent steps.

The above is the process procedure showing the manufacturing method in this example. Hereinafter, the etching mechanism that shows the characteristics of this invention will be supplementally explained. That is, especially in the step (2) above, the 5102 film 2 is simply exposed to the HF gas atmosphere 10, and the areas not exposed to the infrared rays C are completely etched. However, when the selected infrared C that has passed through the mask 15 is partially irradiated, a temperature difference (the temperature difference at the reaction interface is close to 100°C) occurs between the areas that are hit by the infrared rays and the areas that are not hit by the infrared rays. Therefore, the etching rate varies greatly. Therefore, from a relative point of view, partial etching has been performed, and the same effect as conventional photoetching can be obtained.

FIG. 2 is a diagram showing the temperature characteristics of the etching rate of 5102 using HF gas. In the figure, the horizontal axis represents the temperature of the S1 substrate, and the vertical axis represents the etching rate. As is clear from the figure, the etching rate at 40°C is about three times that at 15°C, indicating that the temperature difference has a large effect on the etching rate.

In Examples 1 and 2 above, the energy beam is infrared, the etching reaction gas is HF gas, and the film to be patterned is 5I02 film. However, the above conditions are as follows. A similar effect can be expected under these conditions. That is, instead of infrared rays, ultraviolet rays or The film may be a gas, and the film body may be an insulating film of Si3N4 in addition to SiO, a semiconductor film made of polysilicon,
It can also be applied to metal films such as AI.

[Effects of the Invention] As explained in detail above, according to the present invention, the photoetching process, which conventionally required five steps of photoresist coating, exposure, development, etching, and photoresist film removal, can be performed using a photoresist. It is a single process, in which the semiconductor substrate on which the film has been formed is irradiated with an energy beam in an etching reaction gas atmosphere, and the film in the irradiated area is etched. The number of steps is significantly reduced, contributing to significant savings in manufacturing time and costs. , 'Furthermore, because the conventional photoetching process that required various types of equipment can be carried out with a single apparatus according to the present invention, a reduction in labor and space can be expected.

Further, according to the present invention, since the etching process can be performed without using photoresist, it is possible to eliminate contamination of semiconductor elements by the resist, which is highly effective in improving product yield.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of a cross-sectional configuration of a semiconductor device manufacturing apparatus showing an embodiment of the present invention, and FIG. 2 is a 1% HF film of a 0° Si film.
A diagram showing the temperature dependence of etching rate by gas,
FIG. 3 is an explanatory diagram of a photoetching process in a conventional semiconductor device manufacturing process. In the figure, 1 is an 81 substrate, 2 is a 5102 film, 3 is a photoresist, 4 is a photomask, 5 is a pattern of the photomask, 5a is an opening part by pattern 5, 5b is a pattern of 5102 film 2, 6 is an exposed part of the resist, 7 is an etching box, 8 is a quartz plate forming a window, 9 is a port (1),
9a is a port (2), 10 is an HF gas atmosphere, 11 is a plate type cooling device, 12 is a halogen lamp, 13 is a lens, 14 is a mask pattern, and 15 is a mask.

Claims (2)

[Claims] (1) A sealed etching box equipped with a plate-shaped cooling device at the inner bottom on which a semiconductor substrate with a film formed on the surface is placed; an energy source provided above the etching box; The etching box includes an energy beam irradiation means consisting of a lens that emits an energy beam emitted from a source in parallel and perpendicular to the semiconductor substrate, and a mask for patterning the film body. A window made of a transparent plate for the energy beam is provided in at least a part of the upper box wall of the box, and at least one type of reaction gas for etching the energy beam irradiated portion of the film body is introduced into the etching box. Introducing and deriving at least 2
What is claimed is: 1. A semiconductor device manufacturing apparatus characterized by having a plurality of ports. (2) A semiconductor substrate having a film body having an insulating film, a semiconductor film, or a metal film formed on its surface is placed on a plate-shaped cooling device installed at the inner bottom of a closed etching box, and the above-mentioned After introducing the reaction gas for film etching into a closed type etching box and forming an atmosphere of this reaction gas, a parallel beam emitted from the energy source of the energy beam irradiation means installed at the top of the etching box is applied. irradiating the semiconductor substrate with an energy beam perpendicularly to the semiconductor substrate through a mask for pattern formation and a transmission window for the energy beam provided at the top of the etching box, etching the film body in the area irradiated with the energy beam; A method for manufacturing a semiconductor device, characterized in that during this etching, the plate type cooling device is operated as necessary to cool the substrate, and the etching process is completed, thereby patterning the film body. .