JPH01125870A - Gallium arsenide schottky barrier semiconductor device - Google Patents
Gallium arsenide schottky barrier semiconductor deviceInfo
- Publication number
- JPH01125870A JPH01125870A JP28355687A JP28355687A JPH01125870A JP H01125870 A JPH01125870 A JP H01125870A JP 28355687 A JP28355687 A JP 28355687A JP 28355687 A JP28355687 A JP 28355687A JP H01125870 A JPH01125870 A JP H01125870A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- gaas
- type semiconductor
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 229910018575 Al—Ti Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はｎ型砒化ガリウム（以下ｎ−ＧａムＳと略す）
を用いたショットキ障壁型半導体装置、特に電界効果ト
ランジスタ（以下ＦＩＴと略す）に関する。[Detailed Description of the Invention] Industrial Field of Application The present invention relates to n-type gallium arsenide (hereinafter abbreviated as n-GaM S).
The present invention relates to a Schottky barrier type semiconductor device using a Schottky barrier type semiconductor device, particularly a field effect transistor (hereinafter abbreviated as FIT).
従来の技術
ＧａＡｇシヲットキ障壁型電界効果トランジスタ（以下
ＧａＡｓ −Ｆ ｇ Ｔと略す）は、ｎ−ＧａＡＳが材
料的に飽和速度が大きいので、高速、高周波半導体装置
として広く用いられている。ＧａＡｓ −ＦＥＴのショ
ットキ障壁となるゲートａ極材料としては、種々の材料
が用いられている。例えばアルミニウム（以下ｈｌと略
す） 、 Ａｄ−チタン（以下Ｔｉと略す）、Ｔ１−白
金（以下ｐｔと略す）−金（以下ムＵと略す）、タング
ステン（以下Ｗと略す）等多くの材料がある。単体のＧ
ａ Ａｓ−ＦＩＣＴのゲート電極としてはＡ、５−Ｔｉ
が多く用いられている。2. Description of the Related Art GaAg Schottky barrier field effect transistors (hereinafter abbreviated as GaAs-F g T) are widely used as high-speed, high-frequency semiconductor devices because n-GaAS has a high saturation speed as a material. Various materials are used as gate a-electrode materials that serve as Schottky barriers in GaAs-FETs. For example, there are many materials such as aluminum (hereinafter abbreviated as HL), Ad-titanium (hereinafter abbreviated as Ti), T1-platinum (hereinafter abbreviated as PT)-gold (hereinafter abbreviated as U), tungsten (hereinafter abbreviated as W), etc. be. Single G
a As the gate electrode of As-FICT, A, 5-Ti
is often used.
発明が解決しようとする問題点
このゲート成極材料はＡ４でショットキ障壁をｎ−Ｇａ
ＡＳと形成し、Ｔｉでムｅのエレクトロマイグレーショ
ンを防止している。ｋｅ−Ｔｉ からなるゲート電極
はゲート抵抗が低い、電画の加工が容易である等の多く
の長所を有しているが、ショットキ界面にトラップ準位
を形成しゃすぐ、ＧａＡｓ −Ｆ Ｅ Ｔの特性が経時
変化するという問題がある。Problems to be Solved by the Invention This gate polarization material is A4 with a Schottky barrier of n-Ga.
It is formed with AS, and Ti prevents electromigration of mu. Although the gate electrode made of ke-Ti has many advantages such as low gate resistance and easy processing of electrolytic images, it is difficult to form trap levels at the Schottky interface, making it difficult to use in GaAs-FET. There is a problem that the characteristics change over time.
本発明は上記の問題に鑑み、ＧａＡｓ −Ｆ Ｅ Ｔの
ゲート電極としてＡβ−Ｔｉのゲー［極を改良し、経時
変化のないショットキ障壁用材料を提供することを目的
とする。In view of the above problems, an object of the present invention is to improve a gate electrode of Aβ-Ti as a gate electrode of a GaAs-FET, and to provide a material for a Schottky barrier that does not change over time.
問題点を解決するための手段
本発明はＩ’ｍ−ＧＩＬＡｓに用いるショットキ障壁用
材料として、Ｔ１−ム１−Ｔｉからなる金属を用いる。Means for Solving the Problems The present invention uses a metal consisting of T1-Ti as the Schottky barrier material used in I'm-GILAs.
作用
本発明により、経時変化がなく、良好なＦＥＴ特性を有
するｎ−ＧａＡｓショア）キ障壁型半導体装置を提供す
る。Effect of the Invention The present invention provides an n-GaAs shore barrier type semiconductor device which does not change over time and has good FET characteristics.
実施例
本発明の一実施例としてＧａＡｓ −Ｆ Ｅ Ｔについ
て図を用いて説明する。図は本発明の一実施例のショッ
トキ障壁型ＧＬＡ５− ＦｇＴの構造を示す断面図であ
る。EXAMPLE As an example of the present invention, a GaAs-FET will be explained with reference to the drawings. The figure is a sectional view showing the structure of a Schottky barrier type GLA5-FgT according to an embodiment of the present invention.
半絶縁Ｇａ Ａｓ基板１にエピタキシャル法を用いて、
高抵抗バッファ層２、キャＪ ヤｌ１１度４ Ｘ １０
”１、厚み０．１μｍのｎ型半導体層３、キャリヤ濃度
２ Ｘ １０１８ｄ 、厚み０．１５１１ｍのｎ＋型半
導体４を形成する。欠いて化学エツチングを用いて、メ
サ部６、リセス部６を形成する。通常の写真食刻法とリ
フトオフ法を用いて、オーミックｔｉを形成し、ソース
電極７、ドレイン電極８を形成する。次にゲート電極９
として、Ｔｉ５００人、ｈ１３０００人、Ｔｉ５００人
を連続真空蒸着法を用いて形成する。表面保護膜として
窒化シリコンを３０００人堆積する。（図示せず）しか
る後、３６０°Ｃで３０分間水素雰囲気中で安定化のた
めの熱処理をして、ＦＥＴの製作が終る。製作したＦＥ
Ｔのゲート長は０．３１１ｍ 、ゲート巾は２００μｍ
である。Using an epitaxial method on a semi-insulating GaAs substrate 1,
High resistance buffer layer 2, layer 11 degrees 4 x 10
1. Form an n-type semiconductor layer 3 with a thickness of 0.1 μm, a carrier concentration of 2×1018d, and an n+-type semiconductor 4 with a thickness of 0.1511 m. Mesa portion 6 and recess portion 6 are formed using chemical etching. An ohmic Ti is formed using a normal photolithography method and a lift-off method, and a source electrode 7 and a drain electrode 8 are formed.Next, a gate electrode 9 is formed.
As a result, 500 Ti, 13000 H, and 500 Ti are formed using a continuous vacuum deposition method. 3,000 silicon nitride layers are deposited as a surface protection film. (Not shown) Thereafter, a heat treatment is performed for stabilization at 360° C. for 30 minutes in a hydrogen atmosphere, and the fabrication of the FET is completed. The manufactured FE
T gate length is 0.311m, gate width is 200μm
It is.
上記と同一方法でゲート電極として、Ａ４３ｏ００人、
Ｔｉ５ｏｏ入のＦＥＴを製作し、本発明と信頼性の比較
をした。信頼性の条件としては１２０″Ｃでドレイン電
流２５ｍＡ条件に試料を５００時間、１０００時間放置
した後、試作の雑音指数を測定した。雑音指数の測定条
件としては、１２ ＧＨｚ で、ドレイン電流１０ｍ
ムで測定した。A43o00 person as a gate electrode in the same method as above,
A FET containing Ti5oo was manufactured and its reliability was compared with that of the present invention. The reliability conditions were 120"C and a drain current of 25mA, after which the sample was left for 500 and 1000 hours, and then the noise figure of the prototype was measured.The noise figure measurement conditions were 12 GHz and a drain current of 10mA.
Measured using
試料は本発明、従来例とも５０ット試作し、各ロフトか
ら任意に１００ケ選別し、６ｏ○ケずつ信頼性試験を行
った。本発明、従来例とも初期値の雑音指数は１．２±
ｏ、２ｄＢの試料を用いた。信頼性試験に於ける良否の
判定は雑音指数が１．６ｄＢ以北を不良とした。次表に
信頼性試験に於ける累積不良の個数を示す。50 samples were produced for both the present invention and the conventional example, 100 samples were arbitrarily selected from each loft, and a reliability test was conducted on 60 samples each. The initial noise figure for both the present invention and the conventional example is 1.2±
A sample of 2 dB was used. In the reliability test, a product with a noise figure of 1.6 dB or higher was judged to be defective. The following table shows the cumulative number of defects in reliability tests.
この表から本発明の劣化が極端に少ないことは明白であ
る。不良の原因を検討した結果、本発明の不良の１ケは
オーミック電極の劣化に伴う、ソース抵抗の増大であっ
た。一方従来例の１０００時間での不良の２３ケの内２
ヶがオーミ、、り電極の劣化に伴う、ソース抵抗の増大
であり、他の２１ケはＳパラメータの測定から相互コン
ダクタンスの減少、ゲート抵抗の増大が見られた。From this table, it is clear that the deterioration of the present invention is extremely small. As a result of examining the causes of defects, one defect in the present invention was found to be an increase in source resistance due to deterioration of the ohmic electrode. On the other hand, 2 out of 23 defects in the conventional example after 1000 hours
In one case, the source resistance increased due to deterioration of the ohmic and diode electrodes, and in the other 21 cases, S-parameter measurements showed a decrease in mutual conductance and an increase in gate resistance.
本発明のゲート電極を用いることで、雑音指数の劣化の
少ない原因は明らかではないが、本発明のゲート電極の
方がショットキ界面及びゲート電極材の変化が少ないの
ではないかと推測している。The reason why the noise figure deteriorates less when using the gate electrode of the present invention is not clear, but it is speculated that the gate electrode of the present invention causes fewer changes in the Schottky interface and gate electrode material.
実施例ｎはＧａＡｓ −Ｆ Ｅ Ｔで説明したが、Ｇａ
Ａｓショットキダイオードにも適用できることは勿論で
ある。又２次元電子ガスを用いたデバイスにも適用でき
ることは勿論である。Example n was explained using GaAs-FET, but GaAs-FET
Of course, it can also be applied to As Schottky diodes. It goes without saying that the present invention can also be applied to devices using two-dimensional electron gas.
発明の詳細
な説明したように、本発明はｎ−ＧａＡｓにＴｉ−Ａ
ｌ −Ｔ ｉからなる金属層をショットキ電極と１７で
用いることで、ＧａＡｓ −Ｆ ＲＴの雑音指数の劣化
を抑制することが出来、その工業的価匝は大なるものが
ある。As described in detail, the present invention provides Ti-A to n-GaAs.
By using a metal layer made of l-Ti as the Schottky electrode 17, it is possible to suppress the deterioration of the noise figure of the GaAs-F RT, and its industrial value is great.
図は本発明の一実施例であるシヨ・ントキ障壁型ＧａＡ
Ｓ −Ｆ Ｋ Ｔの構造を示す断面図である。
１・・・・・・半絶縁性Ｇａ Ａｓ基板、２・・・・・
・高抵抗バッファ層、３・・・・・・ｎ型半導体層、４
・・・・・・ｎ＋半導体層、５・・・・・・メサ部、６
・・・・・・リセス部、７・・・・・・ソース成嘆、８
・・・・・・ドレイン電極、９・・・・・・Ｔｉ−Ａｌ
−Ｔ１ からなるゲート４極。The figure shows a typical barrier type GaA that is an embodiment of the present invention.
It is a sectional view showing the structure of S-FKT. 1... Semi-insulating Ga As substrate, 2...
・High resistance buffer layer, 3...n-type semiconductor layer, 4
......n+ semiconductor layer, 5...Mesa part, 6
・・・Recess part, 7... Sauce admiration, 8
...Drain electrode, 9...Ti-Al
- Gate quadrupole consisting of T1.
Claims (1)
ニウム（Ａｌ）−チタン（Ｔｉ）からなる金属層を設け
、この金属層と前記ｎ型砒化ガリウム結晶との界面にシ
ョットキ障壁を形成せしめてなる砒化ガリウムショット
キ障壁型半導体装置。Arsenide formed by providing a metal layer made of titanium (Ti)-aluminum (Al)-titanium (Ti) on the surface of an n-type gallium arsenide crystal and forming a Schottky barrier at the interface between this metal layer and the n-type gallium arsenide crystal. Gallium Schottky barrier type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28355687A JPH01125870A (en) | 1987-11-10 | 1987-11-10 | Gallium arsenide schottky barrier semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28355687A JPH01125870A (en) | 1987-11-10 | 1987-11-10 | Gallium arsenide schottky barrier semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125870A true JPH01125870A (en) | 1989-05-18 |
Family
ID=17667055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28355687A Pending JPH01125870A (en) | 1987-11-10 | 1987-11-10 | Gallium arsenide schottky barrier semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01125870A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157601A (en) * | 2008-12-26 | 2010-07-15 | Sanken Electric Co Ltd | Semiconductor device, and method of manufacturing the same |
| US9605671B2 (en) | 2013-04-26 | 2017-03-28 | Kobe Steel, Ltd. | Reciprocating compressor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100480A (en) * | 1980-01-11 | 1981-08-12 | Nec Corp | Electric field effect transistor |
-
1987
- 1987-11-10 JP JP28355687A patent/JPH01125870A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100480A (en) * | 1980-01-11 | 1981-08-12 | Nec Corp | Electric field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157601A (en) * | 2008-12-26 | 2010-07-15 | Sanken Electric Co Ltd | Semiconductor device, and method of manufacturing the same |
| US9605671B2 (en) | 2013-04-26 | 2017-03-28 | Kobe Steel, Ltd. | Reciprocating compressor |
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