JPH01124856A - マスクの欠陥修正方法 - Google Patents

マスクの欠陥修正方法

Info

Publication number
JPH01124856A
JPH01124856A JP63244067A JP24406788A JPH01124856A JP H01124856 A JPH01124856 A JP H01124856A JP 63244067 A JP63244067 A JP 63244067A JP 24406788 A JP24406788 A JP 24406788A JP H01124856 A JPH01124856 A JP H01124856A
Authority
JP
Japan
Prior art keywords
sample
ion beam
mask
spot
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63244067A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427540B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Yamaguchi
博司 山口
Takeoki Miyauchi
宮内　健興
Akira Shimase
朗 嶋瀬
Mikio Hongo
幹雄 本郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63244067A priority Critical patent/JPH01124856A/ja
Publication of JPH01124856A publication Critical patent/JPH01124856A/ja
Publication of JPH0427540B2 publication Critical patent/JPH0427540B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP63244067A 1988-09-30 1988-09-30 マスクの欠陥修正方法 Granted JPH01124856A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63244067A JPH01124856A (ja) 1988-09-30 1988-09-30 マスクの欠陥修正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63244067A JPH01124856A (ja) 1988-09-30 1988-09-30 マスクの欠陥修正方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56153806A Division JPS5856332A (ja) 1981-09-30 1981-09-30 マスクの欠陥修正方法

Publications (2)

Publication Number Publication Date
JPH01124856A true JPH01124856A (ja) 1989-05-17
JPH0427540B2 JPH0427540B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=17113243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63244067A Granted JPH01124856A (ja) 1988-09-30 1988-09-30 マスクの欠陥修正方法

Country Status (1)

Country Link
JP (1) JPH01124856A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283455A (ja) * 2008-04-24 2009-12-03 Semiconductor Energy Lab Co Ltd 蒸着用基板の作製方法、および発光装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487479A (en) * 1977-12-23 1979-07-11 Nec Corp Photo mask blank substrate
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487479A (en) * 1977-12-23 1979-07-11 Nec Corp Photo mask blank substrate
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283455A (ja) * 2008-04-24 2009-12-03 Semiconductor Energy Lab Co Ltd 蒸着用基板の作製方法、および発光装置の作製方法

Also Published As

Publication number Publication date
JPH0427540B2 (enrdf_load_stackoverflow) 1992-05-12

Similar Documents

Publication Publication Date Title
JPH0425531B2 (enrdf_load_stackoverflow)
USRE33193E (en) Ion beam processing apparatus and method of correcting mask defects
JPS59168652A (ja) 素子修正方法及びその装置
US6949756B2 (en) Shaped and low density focused ion beams
TWI803572B (zh) 帶電粒子束裝置、試料加工觀察方法
JP2008112999A (ja) 荷電粒子露光装置
US20240170248A1 (en) Particle beam system
JPH02229418A (ja) 集束されたイオンビームコラム
US4924104A (en) Ion beam apparatus and method of modifying substrate
JPH11213934A (ja) 集束イオンビームによる二次イオン像観察方法
US10651005B2 (en) Innovative source assembly for ion beam production
JPH10162769A (ja) イオンビーム加工装置
JPH0428097B2 (enrdf_load_stackoverflow)
JPH01124856A (ja) マスクの欠陥修正方法
JPH01124857A (ja) イオンビーム加工装置
JP7697666B2 (ja) 集束イオンビーム装置
JPH08222175A (ja) 荷電粒子を用いた微細加工方法及び装置
JP2022182527A (ja) 集束イオンビーム装置
JPH09186138A (ja) イオンビーム加工装置
JPS63170940A (ja) Ｉｃ素子の修正方法
JP2829231B2 (ja) Ｉｃ素子の修正方法
JP2829232B2 (ja) Ｉｃ素子の加工装置
JPH0429052B2 (enrdf_load_stackoverflow)
JPH06244179A (ja) Ｉｃ素子の修正方法
JPH09162098A (ja) イオンビーム加工方法および装置