JPH01120328U - - Google Patents

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Publication number
JPH01120328U
JPH01120328U JP1532488U JP1532488U JPH01120328U JP H01120328 U JPH01120328 U JP H01120328U JP 1532488 U JP1532488 U JP 1532488U JP 1532488 U JP1532488 U JP 1532488U JP H01120328 U JPH01120328 U JP H01120328U
Authority
JP
Japan
Prior art keywords
processing space
processing
thermal spray
samples
faces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1532488U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1532488U priority Critical patent/JPH01120328U/ja
Publication of JPH01120328U publication Critical patent/JPH01120328U/ja
Pending legal-status Critical Current

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Landscapes

  • Drying Of Semiconductors (AREA)
JP1532488U 1988-02-08 1988-02-08 Pending JPH01120328U (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1532488U JPH01120328U (ko) 1988-02-08 1988-02-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1532488U JPH01120328U (ko) 1988-02-08 1988-02-08

Publications (1)

Publication Number Publication Date
JPH01120328U true JPH01120328U (ko) 1989-08-15

Family

ID=31227276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1532488U Pending JPH01120328U (ko) 1988-02-08 1988-02-08

Country Status (1)

Country Link
JP (1) JPH01120328U (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04363021A (ja) * 1991-02-08 1992-12-15 Sumitomo Metal Ind Ltd プラズマプロセス装置
JP2007332462A (ja) * 2000-12-12 2007-12-27 Tokyo Electron Ltd プラズマ処理装置の再生方法，プラズマ処理容器内部材，プラズマ処理容器内部材の製造方法及びプラズマ処理装置
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63281430A (ja) * 1987-05-14 1988-11-17 Matsushita Electric Ind Co Ltd ドライエッチング装置の電極構造
JPS6439728A (en) * 1987-08-05 1989-02-10 Mitsubishi Electric Corp Manufacture of semiconductor by plasma reaction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63281430A (ja) * 1987-05-14 1988-11-17 Matsushita Electric Ind Co Ltd ドライエッチング装置の電極構造
JPS6439728A (en) * 1987-08-05 1989-02-10 Mitsubishi Electric Corp Manufacture of semiconductor by plasma reaction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04363021A (ja) * 1991-02-08 1992-12-15 Sumitomo Metal Ind Ltd プラズマプロセス装置
JP2007332462A (ja) * 2000-12-12 2007-12-27 Tokyo Electron Ltd プラズマ処理装置の再生方法，プラズマ処理容器内部材，プラズマ処理容器内部材の製造方法及びプラズマ処理装置
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel

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