JPH01119596A - Ａｓ分子線源 - Google Patents
Ａｓ分子線源Info
- Publication number
- JPH01119596A JPH01119596A JP27800687A JP27800687A JPH01119596A JP H01119596 A JPH01119596 A JP H01119596A JP 27800687 A JP27800687 A JP 27800687A JP 27800687 A JP27800687 A JP 27800687A JP H01119596 A JPH01119596 A JP H01119596A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- raw material
- chamber
- beam source
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002994 raw material Substances 0.000 claims description 30
- 230000012010 growth Effects 0.000 claims description 27
- 239000007787 solid Substances 0.000 claims description 15
- 238000000859 sublimation Methods 0.000 claims description 15
- 230000008022 sublimation Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800687A JPH01119596A (ja) | 1987-11-02 | 1987-11-02 | Ａｓ分子線源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800687A JPH01119596A (ja) | 1987-11-02 | 1987-11-02 | Ａｓ分子線源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01119596A true JPH01119596A (ja) | 1989-05-11 |
| JPH0550479B2 JPH0550479B2 (enrdf_load_stackoverflow) | 1993-07-29 |
Family
ID=17591318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27800687A Granted JPH01119596A (ja) | 1987-11-02 | 1987-11-02 | Ａｓ分子線源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01119596A (enrdf_load_stackoverflow) |
-
1987
- 1987-11-02 JP JP27800687A patent/JPH01119596A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550479B2 (enrdf_load_stackoverflow) | 1993-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080729 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080729 Year of fee payment: 15 |