JPH01115685A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH01115685A JPH01115685A JP62274332A JP27433287A JPH01115685A JP H01115685 A JPH01115685 A JP H01115685A JP 62274332 A JP62274332 A JP 62274332A JP 27433287 A JP27433287 A JP 27433287A JP H01115685 A JPH01115685 A JP H01115685A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording layer
- recording medium
- optical
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 10
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000037430 deletion Effects 0.000 abstract 4
- 238000012217 deletion Methods 0.000 abstract 4
- 239000000470 constituent Substances 0.000 abstract 1
- 230000001988 toxicity Effects 0.000 abstract 1
- 231100000419 toxicity Toxicity 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 56
- 239000004065 semiconductor Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910001215 Te alloy Inorganic materials 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光によって情報を記録、再生および消去可能
な光ディスク、光カードなどの書き換え可能型光記録媒
体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a rewritable optical recording medium, such as an optical disk or an optical card, on which information can be recorded, reproduced, and erased using light.
従来、非晶質状態と結晶状態あるいは、複数の結晶状態
間の光学的変化を利用して情報の記録、消去を行なう光
記録媒体としては、次のものがある。Conventionally, there are the following optical recording media that record and erase information by utilizing optical changes between an amorphous state and a crystalline state, or a plurality of crystalline states.
非晶質状態と結晶状態の２つの状態間の可逆的な転移に
より記録、消去を行なうものとしては、Ｔｅを主成分と
するＴ ｅ ８１Ｇ ｅ １５８ ｂ２３２ ＩＩ膜を
記録層としたもの（特公昭４７−２６８９７＞ 、Ｔ
ｅ ＧｅＳｎ合金薄膜を記録層としたもの（特開昭６１
−３３２４など）、’Ｔｅを主成分とするＴ ｅ ８０
Ｓ ｂ ｌ０３ｅ１０膜を記録層としたもの（特開昭６
１−１４５７３７など）、５ｂ２Ｓｅなどの組成の３ｂ
−３ｅ合金を記録層とするものく特開昭６０−１５５４
９など）、Ｉｎ５ｂ化合物半導体に少量のＴｅを添加し
記録層としたもの（ＳＰＩＥ Ｖｏｌ、 ５２９ Ｐ５
１ ） 、Ｔｅ−３ｂ２元合金を記録層としたもの（８
６年応用物理学会学術講演集 ２９ａ−ＺＥ−３，４）
、Ｔ ｅ低酸化物を主成分とする薄膜を記録層とする
もの（特開昭５９−１８５０４８） 、また丁ｅ−Ｇｅ
合金を主成分とするＨｅ−０−３ｎ−Ｇｅ−ＡＵ （特
開昭６１−２５９５＞ 、丁ｅ−０−Ｉｎ−Ｇｅ−Ａｕ
（特開昭６ｌ−２５９２）、Ｔｅ−０−Ｂ ｉ −Ｇ
ｅ−Ａｕ （特開昭６ｌ−２５９３）、Ｔｅ−０−８ｂ
−Ｇｅ−Ａｕ （特開昭６１−２５９５ ）を記録層と
したものがある。As a device that performs recording and erasing by reversible transition between two states, an amorphous state and a crystalline state, there is a device whose recording layer is a Te 81G e 158 b232 II film whose main component is Te (Tokuko Showa). 47-26897>, T
e GeSn alloy thin film as a recording layer (Unexamined Japanese Patent Publication No. 1983-1999)
-3324, etc.), 'Te 80 with Te as the main component
Sb l03e10 film as recording layer (Unexamined Japanese Patent Publication No. 6
1-145737, etc.), 3b with compositions such as 5b2Se, etc.
-3e alloy as recording layer JP-A-60-1554
9), a recording layer made by adding a small amount of Te to an In5b compound semiconductor (SPIE Vol, 529 P5)
1), a recording layer made of Te-3b binary alloy (8
6th Year Academic Lectures of Japan Society of Applied Physics 29a-ZE-3, 4)
, one whose recording layer is a thin film mainly composed of Te-low oxide (Japanese Patent Application Laid-Open No. 59-185048), and Te-Ge
He-0-3n-Ge-AU (JP-A-61-2595>, which has alloy as main component)
(Unexamined Japanese Patent Publication No. 61-2592), Te-0-B i-G
e-Au (JP 61-2593), Te-0-8b
-Ge-Au (Japanese Unexamined Patent Publication No. 61-2595) is used as a recording layer.
また、可逆的に転移可能な異なる結晶状態間の光学的変
化により記録、消去を行なうものとしては、Ｉｎ−８ｂ
などの２元合金を主成分とする薄膜を記録層としたもの
（特開昭６１−２２７２３８ ”）がある。Furthermore, In-8b is a device that performs recording and erasing by optical changes between different crystal states that can be reversibly transitioned.
There is a recording layer made of a thin film mainly composed of a binary alloy such as (JP-A-61-227238'').
［発明が解決しようとする問題点］
しかしながら、上記従来技術の場合、次のような問題が
あった。[Problems to be Solved by the Invention] However, in the case of the above-mentioned prior art, there were the following problems.
すなわち、Ｔｅ８１Ｇｅ１５Ｓｂ２３２ 薄膜を記録層
としたもの、および１’−ｅ−Ｇｅ−３ｎを記録層とし
たものでは、記録の高速消去機能と半導体し一ザで記録
可能な実用的記録感度を両立させることができず実用性
に乏しかった。またＴ ｅ ８０Ｓ ｂ１０３ ｅ １
０膜を記録層としたもの、および５ｂ２Ｓｅ等の組成の
５ｂ−３ｅ合金を記録層とするもの、Ｉｎ−３ｂ化合物
半導体に１０膜程度の少量のＴｅを添加し記録層とした
もの、Ｔｅ−８６２元合金を記録層としたものなどでは
、耐酸化性の点では、比較的優れているが、以下の問題
があった。That is, in the case where the recording layer is made of Te81Ge15Sb232 thin film and the case where 1'-e-Ge-3n is used as the recording layer, it is necessary to achieve both a high-speed erasing function and practical recording sensitivity that allows recording in one pass using a semiconductor. It was not practical because it could not be done. Also T e 80S b103 e 1
0 film as a recording layer, 5b-3e alloy of composition such as 5b2Se as a recording layer, In-3b compound semiconductor with a small amount of about 10 films added with Te, and Te- A recording layer made of an 862 element alloy is relatively excellent in terms of oxidation resistance, but has the following problems.
すなわち、Ｔｅ８０ＳｂｌＯ３ｅ１０膜などのＴｅ−３
ｂ−ｓｅ合金膜では、レーザービームによる記録消去に
２０μｓｅｃ程度の時間を要し、消去速度が遅く実用性
に欠りていた。一方、５ｂ２Ｓｅ等の組成の５ｂ−３ｅ
合金を記録層とするものは、記録、消去を繰り返すとノ
イズが急激に増加し記録信号の品位が低下する問題があ
った。ざらにＩｎ−８ｂ化合物半導体に少量のＴｅを添
加し記録層としたものでは、非晶化に要する記録レーザ
パワーが大きく、また、記録時の反射率変化が小さく実
用的でばなかった。さらに、この組成の記録層は、−旦
結晶化した後は非晶化することが著しく困難であるとい
う欠点がある。また、５ｂ２Ｔｅａ合金を記録層とする
場合には、結晶化温度が低く信頼性に乏しく、また消去
に要する時間が長く実用的でなかった。That is, Te-3 such as Te80SblO3e10 film
With the b-se alloy film, it takes about 20 μsec to erase records with a laser beam, so the erasing speed is slow and impractical. On the other hand, 5b-3e with a composition such as 5b2Se
A recording layer made of an alloy has a problem in that when recording and erasing are repeated, noise increases rapidly and the quality of recorded signals deteriorates. A recording layer made by adding a small amount of Te to an In-8b compound semiconductor required a large recording laser power for amorphization, and the change in reflectance during recording was small, making it impractical. Furthermore, a recording layer having this composition has the disadvantage that it is extremely difficult to amorphize it once it has been crystallized. Furthermore, when a 5b2Tea alloy is used as a recording layer, the crystallization temperature is low and reliability is poor, and the time required for erasing is long, making it impractical.
丁ｅ低酸化物を主成分とする薄膜を記録層とするもの（
特開昭５９−１８５０４８＞ 、Ｔ ｅ −Ｇ ｅ合金
を主成分とするＴｅ−０−８ｎ−Ｇｅ−Ａｕ （特開昭
６１−２５９５＞ 、Ｔｅ−Ｃ）−Ｉ、ｎ−ＧＩＡｕ
（特開昭６１−２５９２＞ 、Ｔｅ−０−Ｂ ｉ −Ｇ
ｅ−Ａｕ（特開昭６１−２５９３＞ 、Ｔｅ−０−３ｂ
、−Ｇｅ−ＡＵ（特開昭６１−２５９５＞を記録層とし
たものでは、記録の消去に要する時間が長いという欠点
があった。また、異なる結晶状態間の転移に伴なう光学
的性質の差異を利用して記録を行なう、Ｉｎ−８ｂなど
の２元合金を主成分とする記録層の場合には、記録層を
予めオーブンなどで結晶状態に初期化する必要があるこ
と、記録時の光ビーム走査速度が速い場合、記録状態が
悪くなることなどの実用上の欠点があった。Those whose recording layer is a thin film mainly composed of low oxides (
JP-A-59-185048>, Te-0-8n-Ge-Au whose main component is Te-Ge alloy (JP-A-61-2595>, Te-C)-I, n-GIAu
(Unexamined Japanese Patent Publication No. 61-2592>, Te-0-B i-G
e-Au (JP-A-61-2593>, Te-0-3b
, -Ge-AU (Japanese Unexamined Patent Publication No. 61-2595) as a recording layer has the disadvantage that it takes a long time to erase records.In addition, optical properties due to transitions between different crystal states In the case of a recording layer mainly composed of a binary alloy such as In-8b, which performs recording by utilizing the difference between When the light beam scanning speed is high, there are practical drawbacks such as poor recording conditions.
本発明はかかる問題点を改善し、記録層の毒性が低く、
記録に要するパワーが低く、かつ記録の高速消去が可能
な、信頼性の高い光記録媒体を提供することを目的とす
る。The present invention improves these problems and has a recording layer with low toxicity.
It is an object of the present invention to provide a highly reliable optical recording medium that requires low power for recording and can erase records at high speed.
かかる本発明の目的は、基板上に記録層を備え、該記録
層に光を照射することによって、情報の記録、再生およ
び消去が可能である光記録媒体において、上記記録層の
組成が、下記の一般式で表わされる範囲にあることを特
徴とする光記録媒体により達成される。The object of the present invention is to provide an optical recording medium that includes a recording layer on a substrate and allows information to be recorded, reproduced, and erased by irradiating the recording layer with light, wherein the composition of the recording layer is as follows: This is achieved by an optical recording medium characterized by being within the range represented by the general formula.
（ＳｂＸ Ｔｅ１００−Ｘ ） １００−Ｙ （Ｔｅ
５０Ｇｅ５０） ＹここでＸは、７５＞Ｘ＞７０゜
Ｙは、２５≧Ｙ≧１ 。(SbX Te100-X) 100-Y (Te
50Ge50) Y where X is 75>X>70°Y is 25≧Y≧1.
括弧内のＸ、１００−Ｘ、５０および５０は、それぞれ
、括弧内の成分であるアンチモン（Ｓｂ）、テルル（Ｔ
ｅ＞、テルル（Ｔｅ）およびゲルマニウム（Ｇｅ）の原
子数比を示す。また、括弧外の１００−ＹとＹは、それ
ぞれ、ＴｅとＳｂの原子％の合計（すなわち、括弧内の
（ＳｂＸＴｅ１００−Ｘ ） ）と、テルルとグムマニ
ウム、すなわち括弧内の（Ｔｅ５０Ｇｅ５０）の合計の
原子％を示す。X, 100-X, 50 and 50 in parentheses are the components in parentheses, antimony (Sb) and tellurium (T
e> indicates the atomic ratio of tellurium (Te) and germanium (Ge). In addition, 100-Y and Y outside the parentheses are the sum of the atomic percent of Te and Sb (that is, (SbXTe100-X) in the parentheses) and the sum of tellurium and gummanium, that is, (Te50Ge50) in the parentheses, respectively. Indicates atomic percent.
原子％は式で示した全組成の原子数を１００原子％とし
たときの各々の括弧内の元素の原子数の合計の割合を％
で示したものである。Atomic % is the percentage of the total number of atoms of each element in parentheses when the number of atoms in the total composition shown in the formula is 100 atomic %.
This is shown in .
上記組成範囲においては、おおよそ５００ｎＳｅｃ〜４
０ｎｓｅｃの光パルスによって、結晶状態の記録層に非
晶化マークを形成し情報を記録することができる。また
、−旦形成した前記の非晶化マークを、おおよそ１００
０ｎＳｅＣ〜２００ｎｓｅｃの光照射により結晶状態に
復帰させ、記録を消去することができる。In the above composition range, approximately 500 nSec to 4
Information can be recorded by forming an amorphous mark on a crystalline recording layer using a 0 nsec optical pulse. In addition, the amorphous mark formed once is approximately 100
It is possible to return to the crystalline state by irradiating light for 0 nSeC to 200 nsec and erase the record.
本発明の記録層の主成分は一般式の括弧内に示した、Ｓ
ｂを主とする５ｂ−Ｔｅ合金である。この５ｂ−Ｔｅ合
金は、Ｓｂ、Ｓｂ２ Ｔｅ３化合物に比べても融点が低
く、非晶化による記録が容易である。The main component of the recording layer of the present invention is S shown in parentheses of the general formula.
It is a 5b-Te alloy mainly composed of b. This 5b-Te alloy has a lower melting point than Sb and Sb2Te3 compounds, and can be easily recorded by amorphization.
本発明の記録層に含まれるＳｂは、記録層の組成を示す
一般式において３ｂを示す×（原子％）が、７５＞Ｘ＞
７０の範囲であることが好ましい。Sb contained in the recording layer of the present invention has a general formula representing the composition of the recording layer, where x (atomic %) representing 3b is 75>X>
A range of 70 is preferred.
Ｘか７５原子％以上の場合には、記録層に不可逆的な相
分離が起き易く、記録再生時のノイズが著しく大きくな
ると共に、記録、消去の繰返しが困難になる。加えて、
記録信号のコントラストも低下し実用的ではない。一方
、Ｘが７０原子％以下の場合には、記録の消去に要する
光の照射時間が長くなること、記録マークの熱安定性が
低くなることなどの欠点が生じる。If X is 75 atomic % or more, irreversible phase separation is likely to occur in the recording layer, noise during recording and reproduction becomes significantly large, and it becomes difficult to repeat recording and erasing. In addition,
The contrast of the recorded signal also decreases, making it impractical. On the other hand, when X is 70 atomic % or less, disadvantages arise such as a longer light irradiation time required to erase records and a lower thermal stability of recorded marks.
また記録層に添加したＴ ｅ ５０Ｇ ｅ ５０の組成
の成分は、前記の５ｂ−Ｔｅ合金に２５≧Ｙ≧１の範囲
で添加することが好ましく、これにより、結晶化による
消去に要する時間を低減し、非晶化された記録マークの
高速消去を可能とする効果を有すると共に、記録マーク
消去後の消し残りを低減する効果がある。さらに記録層
の結晶化温度を高め、熱的安定性を改善する効果がある
。７− ｅ ５０Ｇ ｅ ５０成分を含まない場合には
、非晶化した記録マークの消去性が悪く、また再生信号
のコントラストも低いため、実用性がない。このＴ ｅ
５０Ｇ ｅ ５０の原子％の合計Ｙが、２５原子％よ
り多い場合には、記録の消去に要する光の照射時間が長
くなると共に、記録感度が低下し、比較的低出力の安価
な半導体レーザーを利用できないため実用的でない。Furthermore, it is preferable that the composition of Te 50G e 50 added to the recording layer is added to the 5b-Te alloy in the range of 25≧Y≧1, thereby reducing the time required for erasing by crystallization. However, it has the effect of enabling high-speed erasure of amorphized recording marks, and also has the effect of reducing unerased residue after erasing the recording marks. Furthermore, it has the effect of increasing the crystallization temperature of the recording layer and improving its thermal stability. 7-e50G If the e50 component is not included, the erasability of amorphized recording marks is poor and the contrast of the reproduced signal is also low, so that it is not practical. This Te
If the total Y of 50G e 50 atomic% is more than 25 atomic%, the light irradiation time required to erase the record becomes longer and the recording sensitivity decreases, making it difficult to use an inexpensive semiconductor laser with relatively low output. It is not practical because it is not available.
また、Ｙが１原子％未満の場合には、消去速度の向上、
消し残り低減の効果が認められない。In addition, when Y is less than 1 atomic %, the erasing speed can be improved,
No effect on reducing unerased areas was observed.
記録の高速消去が可能であり、記録再生時の信号強度が
大きく、良好なキャリア対ノイズ比の得られる良好な組
成は、Ｘが７５〜７０原子％であり、かつ、Ｙが１０〜
２５原子％である。A good composition that enables high-speed erasing of records, has a high signal strength during recording and reproduction, and provides a good carrier-to-noise ratio is one in which X is 75 to 70 atomic % and Y is 10 to 10 atomic %.
It is 25 atom%.
本発明の記録層は、厚さ１０〜１１０００ｎとして基板
上に形成されている。特に光ディスクとして高い感度を
得るためには、１００ｍ以上５０ｎｍ以下とすることが
好ましく、さらに良好な記録再生信号のキャリア対ノイ
ズ比を得るためには、６０ｎｍ〜１５０ｎｍとすること
が好ましい。The recording layer of the present invention is formed on a substrate with a thickness of 10 to 11000 nm. In particular, in order to obtain high sensitivity as an optical disc, it is preferably 100 m or more and 50 nm or less, and in order to obtain an even better carrier-to-noise ratio of recording and reproduction signals, it is preferably 60 nm to 150 nm.
また、本発明の記録層に隣接して、保護層を積層しても
よい。この場合には、記録時の記録層のに変形が起りに
くく、記録の消去、書き換えの回数を改善することがで
きる。前記の保護層としては、８１０２などの無機薄膜
、ポリイミド樹脂などの耐熱性高分子薄膜などが好まし
い。特に、Ｓｉ。Further, a protective layer may be laminated adjacent to the recording layer of the present invention. In this case, deformation of the recording layer during recording is less likely to occur, and the number of times recording can be erased and rewritten can be improved. As the protective layer, an inorganic thin film such as 8102, a heat-resistant polymer thin film such as polyimide resin, etc. are preferable. In particular, Si.
Ｇｅ、Ｔ ｉ、Ｚｒ、丁ｅなどの金属酸化物薄膜が、耐
熱性が高いこと、記録層の酸化を防止できることから好
ましい。Metal oxide thin films such as Ge, Ti, Zr, and Te are preferable because they have high heat resistance and can prevent oxidation of the recording layer.
本発明に用いられる基板としては、プラスチック、ガラ
ス、アルミニウムなど従来の記録媒体と同様なものでよ
い。収束光により基板側から記録することによってごみ
の影響を避ける目的からは、基板として透明材お１を用
いることが好ましい。上記のような材料としては、ポリ
エチレンテレフタレート、ポリメチルメタクリレート、
ポリカーボネイト、エポキシ樹脂、ポリオレフィン樹脂
、ガラスが好ましい。さらに好ましくは、複屈折が小さ
いこと、形成が容易であることから、ポリメチルメタク
リレート、ポリカーボネイト、エポキシ樹脂がよい。基
板の厚さは、特に限定するものではないが、１０ミクロ
ン以上、５ミリメートル以下が実用的である。１０ミク
ロン未満では基板側から収束光で記録する場合でもごみ
の影響を受けやすくなり、５ミリメートルを越える場合
には、収束光で記録する場合、対物レンズの開口数を大
きくすることかできなくなり、ピットサイズが大きくな
るため記録密度を上げることが内勤になる。The substrate used in the present invention may be the same as conventional recording media, such as plastic, glass, or aluminum. For the purpose of avoiding the influence of dust by recording from the substrate side using convergent light, it is preferable to use a transparent material 1 as the substrate. The above materials include polyethylene terephthalate, polymethyl methacrylate,
Polycarbonate, epoxy resin, polyolefin resin, and glass are preferred. More preferably, polymethyl methacrylate, polycarbonate, and epoxy resin are used because they have low birefringence and are easy to form. Although the thickness of the substrate is not particularly limited, it is practically 10 microns or more and 5 mm or less. If it is less than 10 microns, it will be susceptible to dust even when recording with convergent light from the substrate side, and if it exceeds 5 mm, it will be impossible to do anything other than increasing the numerical aperture of the objective lens when recording with convergent light. As the pit size increases, increasing the recording density becomes an office job.
基板はフレキシブルなものであっても良いし、リジッド
なものであっても良い。フレキシブルな基板は、テープ
状、あるいはシート状で用いることができる。リジット
な基板は、カード状、あるいは円形ディスク状で用いる
ことができる。また必要に応じて、２枚の基板を用いて
エアーザンドイツチ構造、エアーインシデント構造、密
着張り合わせ構造などとすることもできる。The substrate may be flexible or rigid. The flexible substrate can be used in the form of a tape or a sheet. The rigid substrate can be used in the form of a card or a circular disk. Further, if necessary, two substrates may be used to form an Air Sanderch structure, an Air Incident structure, a closely bonded structure, or the like.
本発明の光記録媒体の記録に用いる光としては、レーザ
光やスト目示光のごとき光であり、とりわけ、半導体レ
ーザを用いることは、光源が小型でかつ消費電力が小さ
く、変調が容易であることから好ましい。The light used for recording on the optical recording medium of the present invention is light such as a laser beam or an indicator light. In particular, the use of a semiconductor laser is advantageous because the light source is small, has low power consumption, and can be easily modulated. It is preferable for certain reasons.
記録層および保護層は、スパッタ法、抵抗加熱蒸着法、
電子ビーム加熱蒸着法およびイオンブレーティング法な
どの真空中での薄膜形成法により形成することができる
。特に、スパッタ法は、欠陥の少ない記録層、保護層を
形成できることから好ましい。The recording layer and the protective layer are formed by sputtering, resistance heating vapor deposition,
It can be formed by a thin film forming method in vacuum, such as an electron beam heating evaporation method or an ion blating method. In particular, the sputtering method is preferable because it allows formation of a recording layer and a protective layer with few defects.
記録は、結晶状態の記録層をレーザ光照射により非晶化
マークを形成して行なうことができる。Recording can be performed by forming amorphous marks on the crystalline recording layer by irradiating the recording layer with laser light.
また、記録速度が遅くなる場合があるが、非晶質状態の
記録層にレーザ光を照射することによって、非晶質マー
クを結晶化するが、結晶化マークを非晶化して行なうこ
とができる。Also, although the recording speed may be slower, amorphous marks can be crystallized by irradiating the recording layer in an amorphous state with a laser beam; .
結晶状態の記録層にレーザ光を照射し、非晶化マークを
形成して記録を行ない、消去の場合には、レーザ光照射
により非晶化マークを結晶化して行なう方法が、記録速
度を高くできること、記録層の変形が起り難いことから
好ましい。A method in which recording is performed by irradiating a crystalline recording layer with a laser beam to form an amorphous mark, and in the case of erasing, crystallizing the amorphous mark by irradiating a laser beam increases the recording speed. This is preferable because it is possible to do this and deformation of the recording layer is less likely to occur.
結晶状態の記録層に非晶化マークを形成して記録を行な
う場合には、記録層を予め、レーザ光などの光照射、あ
るいは、温風などにより加熱し、結晶化しておくくこと
が好ましい。When recording by forming amorphous marks on a crystalline recording layer, it is preferable to crystallize the recording layer in advance by irradiating it with light such as a laser beam or heating it with hot air. .
［実施例］ 以下、本発明を実施例に基づいて説明する。[Example] Hereinafter, the present invention will be explained based on examples.
なお実施例中の特性は以下の方法で評価したものである
。Note that the properties in the examples were evaluated by the following method.
記録層の組成
形成した記録層の組成はＩＣＰ発光分析（セイコー電子
工業（株）製ＦＴＳ−１１００型）によって確認した。Composition of Recording Layer The composition of the formed recording layer was confirmed by ICP emission spectrometry (model FTS-1100, manufactured by Seiko Electronic Industries, Ltd.).
また、記録再生信号のキャリア対ノイズ比は、スペクト
ル・アナライザを用いて測定した。Further, the carrier-to-noise ratio of the recording/reproduction signal was measured using a spectrum analyzer.
実施例１
厚さ１．２ｍｍ、直径１３ｃｍ、１．６μｍピッチのス
パイラル状のグループ付きポリカーボネイト製基板を毎
分３０回転させながら、スパッタ法により保護層と記録
層を形成した。Example 1 A protective layer and a recording layer were formed by sputtering on a polycarbonate substrate with spiral groups having a thickness of 1.2 mm, a diameter of 13 cm, and a pitch of 1.6 μm while rotating at 30 revolutions per minute.
まず、基板上に１１００ｎの５ｉＯｚ保護層を形成し、
さらに真空度５Ｘ１０−３↑ｏｒｒの条件下で、ｌ’−
ｅ、３ｂおよびＴ ｅ ５０Ｇ ｅ ５０合金を水晶振
動子膜厚計でモニターしながら、同時スパッタして、（
Ｓｂ７３Ｔｅ２７） ７７ （Ｔｅ５０Ｇｅ５０） ２
３の元素組成比の厚さ９Ｑｎｍの記録層を形成した。さ
らにこの記録層上に厚さ１１００ｎのＳｉＯ２保護層を
形成し、本発明の光記録媒体を構成した。First, a 5iOz protective layer of 1100n was formed on the substrate,
Furthermore, under the condition of vacuum degree 5X10-3↑orr, l'-
e, 3b and T e 50G e 50 alloys were simultaneously sputtered while monitoring them with a crystal resonator film thickness meter.
Sb73Te27) 77 (Te50Ge50) 2
A recording layer having an elemental composition ratio of 3 and a thickness of 9 Q nm was formed. Further, a SiO2 protective layer having a thickness of 1100 nm was formed on this recording layer to constitute an optical recording medium of the present invention.
この光記録媒体を線速度１．５ｍ／秒で回転させ、基板
側から開口数０．５の対物レンズで集光した波長８３０
ｎｍの半導体レーザ光を膜面強度３．０ｍＷの条件で照
射しながらトラック上走査し記録層を結晶化した。この
とき結晶化によって記録層の反射率は、上昇した。その
後、同一の光学系を使用して、線速度４ｍ／ｓｅｃの条
件で、周波数１．７５ＭＨｚ、デユーティ比５０％に変
調した１０ｍＷの半導体レーザ光により記録を行なった
。This optical recording medium was rotated at a linear velocity of 1.5 m/sec, and light was focused at a wavelength of 830 from the substrate side using an objective lens with a numerical aperture of 0.5.
The recording layer was crystallized by scanning the track while irradiating it with a nm semiconductor laser beam at a film surface intensity of 3.0 mW. At this time, the reflectance of the recording layer increased due to crystallization. Thereafter, using the same optical system, recording was performed with a 10 mW semiconductor laser beam modulated at a frequency of 1.75 MHz and a duty ratio of 50% at a linear velocity of 4 m/sec.
記録後、半導体レーザの強度を０．９ｍＷとじとて、記
録部分を走査し、記録の再生を行なったところ記録マー
ク部分の反射率が低下し記録が行なわれていることが確
認できた。この再生信号のＣ／Ｎ比をバンド幅３０ｋＨ
７の条件で、測定したところ、デジタル記録が可能な４
２ｄＢの値が得られた。さらに記録部分を５．５ｍＷの
半導体レーザ光により１回走査したところ、記録が消去
された。このときの消去率は一３５ｄＢであった。After recording, the intensity of the semiconductor laser was set to 0.9 mW, the recorded area was scanned, and the recording was reproduced. As a result, the reflectance of the recorded mark area decreased, and it was confirmed that recording was being performed. The C/N ratio of this reproduced signal has a bandwidth of 30kHz.
When measured under the conditions of 7, it was found that digital recording is possible.
A value of 2 dB was obtained. Furthermore, when the recorded portion was scanned once with a 5.5 mW semiconductor laser beam, the recording was erased. The erasure rate at this time was -35 dB.
さらに、この消去部分に記録、消去を繰返し行なうこと
が可能であった。Furthermore, it was possible to repeatedly perform recording and erasing on this erased portion.
また、記録部分の非晶質マークは、通風オーブン中でこ
の光記録媒体を７０’Ｃに３０分間加熱した後も安定に
存在した。Further, the amorphous mark in the recorded portion remained stable even after the optical recording medium was heated to 70'C for 30 minutes in a ventilated oven.
実施例２
実施例１の記録層を（Ｓｂ７３１ｅ２７＞ ８０ （Ｔ
ｅ５０Ｇｅ５０ ）２０の組成の記録層とした他は、実
施例１と同様にして光記録媒体を製作した。この光記録
媒体の記録、再生を実施例１と同様の装置で行なったと
ころ、記録再生信号のＣ／Ｎ比は４０ｄＢであった。Example 2 The recording layer of Example 1 was (Sb731e27>80 (T
An optical recording medium was produced in the same manner as in Example 1, except that the recording layer had a composition of e50Ge50)20. When this optical recording medium was recorded and reproduced using the same apparatus as in Example 1, the C/N ratio of the recorded and reproduced signal was 40 dB.
また、この記録部分を線速度３ｍ／ｓｅｃ、レーザ光パ
ワー４．０ｍＷの条件でトラックあたり１回の照射によ
り消去することが可能であった。消去後のＣ／Ｎ比は１
０ｄＢであった。Furthermore, it was possible to erase this recorded portion by irradiating the track once under the conditions of a linear velocity of 3 m/sec and a laser beam power of 4.0 mW. C/N ratio after erasing is 1
It was 0dB.
比較例１
実施例１において、記録層の組成を下記（イ）〜（ニ）
に変更した以外は実施例１と同様にして光記録媒体をそ
れぞれ作製した。Comparative Example 1 In Example 1, the composition of the recording layer was as follows (a) to (d).
Optical recording media were produced in the same manner as in Example 1 except that the following was changed.
（イ） （Ｓｂ５０Ｔｅ５０） ９８ （Ｔｅ５０Ｇ
ｅ５０） ２（口） （５ｂ８０Ｔｅ２０） ９８ （
Ｔｅ５０Ｇｅ５０） ２（ハ） ５ｂ６６Ｔｅ３４
（ニ） （Ｓｂ６５Ｔｅ３５） ２０ （Ｔｅ５０Ｇｅ
５０） ８０組成（イ）の光記録媒体の場合には、記録
後非晶化マークの消去に要する時間が長く、線速度１゜
５／Ｓ ｅ Ｃで回転させた状態では、１回の半導体レ
ーザ光照射では、消去が困難であった。(A) (Sb50Te50) 98 (Te50G
e50) 2 (mouth) (5b80Te20) 98 (
Te50Ge50) 2 (c) 5b66Te34 (d) (Sb65Te35) 20 (Te50Ge
50) In the case of the optical recording medium of 80 composition (a), it takes a long time to erase the amorphous mark after recording, and when the medium is rotated at a linear velocity of 1°5/S e C, one semiconductor It was difficult to erase with laser light irradiation.
（ロ）の組成の場合には、非晶化マーク形成に要する記
録パワーが大きく、１０ｍＷの半導体レーザ光では、記
録が困難であった。In the case of the composition (b), the recording power required to form the amorphous mark was large, and recording was difficult with a 10 mW semiconductor laser beam.
（ハ）の組成の場合には、記録、消去は可能であるが、
実施例１と同様の記録条件でテストしたところ、Ｃ／Ｎ
比は３６ｄＢと低く実用的な水準に達しなかった。また
非晶質部分の結晶化温度も実施例１に比べ約１０’Ｃ低
く熱安定性も劣っていた。In the case of composition (c), recording and erasing is possible, but
When tested under the same recording conditions as in Example 1, the C/N
The ratio was as low as 36 dB, which did not reach a practical level. Furthermore, the crystallization temperature of the amorphous portion was about 10'C lower than that of Example 1, and the thermal stability was also poor.
（ニ）の組成の場合には、記録感度が低く１０ｍｗ以下
の半導体レーザ光で記録が困難であった。In the case of composition (d), the recording sensitivity was low and recording was difficult with a semiconductor laser beam of 10 mw or less.
実施例３
実施例１の光記録媒体を、室内通常環境に６力月放置し
たのち、実施例１と同様に記録、再生、消去を行なった
が、特に劣化は認められなかった。Example 3 After the optical recording medium of Example 1 was left in a normal indoor environment for 6 months, recording, reproduction, and erasing were performed in the same manner as in Example 1, but no particular deterioration was observed.
また、６０’Ｃ１８０％相対湿度中に２０日間放置した
後も同様に異常は認められなかった。Further, no abnormality was similarly observed after being left in 60'C180% relative humidity for 20 days.
［発明の効果］
本発明は光記録媒体の記録層を３ｂ、ｌｅおよび（３ｅ
からなる特定の組成で構成したので、次のごとき優れた
効果を奏するものである。[Effect of the invention] The present invention provides a recording layer of an optical recording medium with 3b, le and (3e
Since it is made up of a specific composition consisting of, it has the following excellent effects.
（１） 記録に要するパワーが低く、記録の高速消去
が可能であり、かつ記録マークの熱的安定性の高い光記
録媒体とすることができた。(1) An optical recording medium that requires low power for recording, enables high-speed erasing of records, and has high thermal stability of recorded marks can be obtained.
（２）耐湿熱性に優れた光記録媒体とすることができた
。(2) An optical recording medium with excellent heat and humidity resistance could be obtained.
Claims (1)
ことによって、情報の記録、再生および消去が可能であ
る光記録媒体において、上記記録層の組成が、下記の一
般式で表わされる範囲にあることを特徴とする光記録媒
体。 （ＳｂＸＴｅ１００−Ｘ）１００−Ｙ（Ｔｅ５０Ｇｅ５
０）ＹここでＸは、７５＞Ｘ＞７０、 Ｙは、２５≧Ｙ≧１ 括弧内のＸ、１００−Ｘ、５０および５０は、それぞれ
、括弧内の成分であるアンチモン（Ｓｂ）、テルル（Ｔ
ｅ）、テルル（Ｔｅ）およびゲルマニウム（Ｇｅ）の原
子数比を示す。また、括弧外の１００−ＹとＹは、それ
ぞれ、ＴｅとＳｂの原子％の合計と、テルルとゲムマニ
ウム（Ｔｅ５０Ｇｅ５０）の合計の原子％を示す。(1) In an optical recording medium that has a recording layer on a substrate and can record, reproduce, and erase information by irradiating the recording layer with light, the composition of the recording layer is expressed by the following general formula. An optical recording medium characterized by being within the range indicated. (SbXTe100-X)100-Y(Te50Ge5
0) Y where X is 75>X>70, Y is 25≧Y≧1 (T
e) shows the atomic ratio of tellurium (Te) and germanium (Ge). Further, 100-Y and Y outside the parentheses indicate the total atomic % of Te and Sb and the total atomic % of tellurium and gemmanium (Te50Ge50), respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274332A JP2629746B2 (en) | 1987-10-29 | 1987-10-29 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274332A JP2629746B2 (en) | 1987-10-29 | 1987-10-29 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01115685A true JPH01115685A (en) | 1989-05-08 |
| JP2629746B2 JP2629746B2 (en) | 1997-07-16 |
Family
ID=17540180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62274332A Expired - Fee Related JP2629746B2 (en) | 1987-10-29 | 1987-10-29 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2629746B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0371887A (en) * | 1989-08-11 | 1991-03-27 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | Optical data recording medium |
| WO2004030919A1 (en) * | 2002-09-30 | 2004-04-15 | Matsushita Electric Industrial Co., Ltd. | Optical information recording substrate and recording/ reproducing device using it |
| US6937555B2 (en) | 1999-04-28 | 2005-08-30 | Victor Company Of Japan, Ltd. | Information recording medium and reproducing apparatus therefor |
| US7096479B2 (en) | 2003-03-27 | 2006-08-22 | Victor Company Of Japan, Ltd. | Optical information recording medium |
| EP2178086A2 (en) | 1998-09-09 | 2010-04-21 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method |
-
1987
- 1987-10-29 JP JP62274332A patent/JP2629746B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0371887A (en) * | 1989-08-11 | 1991-03-27 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | Optical data recording medium |
| EP2178086A2 (en) | 1998-09-09 | 2010-04-21 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method |
| US6937555B2 (en) | 1999-04-28 | 2005-08-30 | Victor Company Of Japan, Ltd. | Information recording medium and reproducing apparatus therefor |
| US7193958B2 (en) | 1999-04-28 | 2007-03-20 | Victor Company Of Japan, Limited | Information recording medium and reproducing apparatus therefor |
| US7447141B2 (en) | 1999-04-28 | 2008-11-04 | Victor Company Of Japan, Limited | Information recording medium and reproducing apparatus therefor |
| US7477583B2 (en) | 1999-04-28 | 2009-01-13 | Victor Company Of Japan, Limited | Information recording medium and reproducing apparatus therefor |
| US7839757B2 (en) | 1999-04-28 | 2010-11-23 | Victor Company Of Japan, Limited | Information recording medium and reproducing apparatus therefor |
| US7864655B2 (en) | 1999-04-28 | 2011-01-04 | Victor Company Of Japan, Limited | Information recording medium and reproducing apparatus therefor |
| US8264943B2 (en) | 1999-04-28 | 2012-09-11 | JVC Kenwood Corporation | Information recording medium and reproducing apparatus therefor |
| WO2004030919A1 (en) * | 2002-09-30 | 2004-04-15 | Matsushita Electric Industrial Co., Ltd. | Optical information recording substrate and recording/ reproducing device using it |
| US7096479B2 (en) | 2003-03-27 | 2006-08-22 | Victor Company Of Japan, Ltd. | Optical information recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2629746B2 (en) | 1997-07-16 |
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| LAPS | Cancellation because of no payment of annual fees |