JPH01111355A - Structure of electrode termianl of semiconductor device - Google Patents
Structure of electrode termianl of semiconductor deviceInfo
- Publication number
- JPH01111355A JPH01111355A JP27081087A JP27081087A JPH01111355A JP H01111355 A JPH01111355 A JP H01111355A JP 27081087 A JP27081087 A JP 27081087A JP 27081087 A JP27081087 A JP 27081087A JP H01111355 A JPH01111355 A JP H01111355A
- Authority
- JP
- Japan
- Prior art keywords
- electrode terminal
- bump
- wiring conductor
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 238000005452 bending Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000035882 stress Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、多数の外部導出用リードを取り付ける半導体
装置の電極端子、特にバンプ構造の電極端子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrode terminal of a semiconductor device to which a large number of external leads are attached, and particularly to an electrode terminal having a bump structure.
従来、半導体素子の電極と容器の外側のリード線との間
の接続は、細い導線を使用して相互に接続接着するワイ
ヤボンディング方式が主流である。しかし、近年、ワイ
ヤポンディング方式に代わって、容器の内側のリード線
を延長するか、又は、可撓性の電気絶縁材料で形成され
たテープ面に金属材料で連続的に形成した金属箔から多
数のリード線を形成し、かつ、その端部を先細に形成し
て、半導体装置の電気端子に直接接着する接着端となし
、電極端子に同時に接続するリードフレーム方式が実用
化されている。Conventionally, the mainstream method for connecting the electrodes of a semiconductor element and lead wires on the outside of a container is a wire bonding method in which thin conductive wires are used to connect and bond them together. However, in recent years, the wire bonding method has been replaced by extending the lead wire inside the container, or by using a metal foil continuously formed with a metal material on a tape surface made of a flexible electrically insulating material. A lead frame method has been put into practical use in which a large number of lead wires are formed and their ends are tapered to serve as adhesive ends that are directly bonded to electrical terminals of a semiconductor device and simultaneously connected to electrode terminals.
上記のリードフレーム方式においてはリード線の接着端
を接続する半導体素子の電極端子は、通常、金属で構成
された突起電極（以下、単にバンプという）になってい
る、このバンプは、基板の周縁に設け、内部素子から半
導体素子面の絶縁膜上に引きまわされた配線に接続され
ている。バンプはこの配線に金を盛上げて形成されてい
る。バンプとリード線との接続は、銅を基体とするリー
ド線に錫を被せ金バンプとの間で熱によって金−錫の共
晶合金を形成し、接続する合金接続法と、銅を基本とす
るリード線に金を被せ、金バンプとの間で熱と圧力によ
って接続する熱圧着法とがある。金−錫の合金接続法は
、錫の単結晶によるウィスカーがリード間の電気的短絡
を発生させるという問題があり、信頼性を要求される半
導体装置では、金−金の熱圧着法が用いられる傾向にあ
る。ところで従来の半導体装置の電極端子と内部素子と
の配線導体は、配線抵抗、配線容量が最小になるように
、配線導体パターン長を最短にするため、第３１Ｎに示
すように電極端子１の配線導体２への引き出し部３に屈
折部４を有する構造になっている。In the above lead frame method, the electrode terminal of the semiconductor element to which the adhesive end of the lead wire is connected is usually a protruding electrode (hereinafter simply referred to as a bump) made of metal. It is connected to the wiring routed from the internal element to the insulating film on the surface of the semiconductor element. The bump is formed by applying gold to this wiring. The bumps and lead wires are connected using an alloy connection method, in which a copper-based lead wire is coated with tin, and a gold-tin eutectic alloy is formed between it and the gold bump, and the connection is made using copper as the base. There is a thermocompression bonding method in which lead wires are coated with gold and connected to gold bumps using heat and pressure. The gold-tin alloy bonding method has the problem that tin single-crystal whiskers cause electrical shorts between leads, so gold-gold thermocompression bonding is used in semiconductor devices that require reliability. There is a tendency. By the way, the wiring conductors between the electrode terminals and internal elements of conventional semiconductor devices are arranged as shown in No. 31N in order to minimize the wiring conductor pattern length so that the wiring resistance and wiring capacitance are minimized. It has a structure in which a lead-out portion 3 to the conductor 2 has a bent portion 4.
第３図に示すような従来の半導体装置の電極端子構造は
、外部リード線とバンプとの接続時に加わる圧力で生じ
る応力以外に、熱による熱応力が発生し１両者の応力の
相乗衿用によって、バンプの低部の基板にクラックが生
じるという問題があった。特に、大規模集積回路では、
電極端子の数が数十本になると、近年、益々大規模化し
ている集積回路では、電極端子の数がさらに増加する傾
向にあり、個々の電極端子であるバンプの厚さおよび外
部リード線の厚さにバラツキが発生し、接続の際の圧力
および熱が各々のバンプに平均して加わらず、大きな応
力が生じたバンプ低部の基板を破壊するという問題があ
った。In the conventional electrode terminal structure of a semiconductor device as shown in Fig. 3, in addition to the stress caused by the pressure applied when connecting the external lead wire and the bump, thermal stress is generated due to heat. However, there was a problem in that cracks occurred in the substrate at the bottom of the bump. Especially in large-scale integrated circuits,
As the number of electrode terminals increases to several tens, the number of electrode terminals tends to increase further in integrated circuits that have become larger and larger in recent years. There was a problem that variations in thickness occurred, and pressure and heat during connection were not evenly applied to each bump, resulting in destruction of the substrate at the bottom of the bump where large stress was generated.
本発明の目的は上記の問題に鑑み、外部リード線と電極
端子の接続時に加わる熱による応力の防止が可能な半導
体装置の電極端子構造を提供するものである。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide an electrode terminal structure for a semiconductor device that can prevent stress due to heat applied when connecting an external lead wire and an electrode terminal.
本発明では、外部リードが熱圧着手段により接続される
バンプ構造の電極端子を有する半導体装置において、前
記電極端子と内部素子とを結ぶ配線導体が、屈折角がな
いように前記電極端子から引出しであるよゲにしている
。In the present invention, in a semiconductor device having a bump-structured electrode terminal to which an external lead is connected by thermocompression bonding means, a wiring conductor connecting the electrode terminal and an internal element can be drawn out from the electrode terminal so that there is no bending angle. Yes, I'm gay.
バンプに加わる熱応力は主として配線導体により拘束さ
れることにより生ずるが、配線導体がバンプ近傍で屈折
していると、この屈折部分の膨張率が屈折しないで引出
された場合に対して著しくなる０本発明では、このバン
プ近傍の屈折部がないようにしているので、熱応力を軽
減できる。Thermal stress applied to the bump is mainly caused by being restrained by the wiring conductor, but if the wiring conductor is bent near the bump, the coefficient of expansion of this bent part becomes significantly higher than when it is pulled out without bending. In the present invention, since there is no bent portion near the bump, thermal stress can be reduced.
以下に１本発明の実施例を図面を参照して説明する。第
１図（ａ）は１本発明の第１実施例であり、電極端子と
内部素子が図示したＹ軸と平行に直線上に位置する場合
であり、同図（ｂ）は、電極端子と内部端子がＹ軸と平
行に直線上に位置しない場合である。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1(a) shows a first embodiment of the present invention, in which the electrode terminal and the internal element are located on a straight line parallel to the illustrated Y axis, and FIG. 1(b) shows the electrode terminal and internal element. This is a case where the internal terminals are not located on a straight line parallel to the Y axis.
図において、ｌはバンプ構造の電極端子で、２は配線導
体で、３は電極端子ｌの配線導体２への引き出し部で、
４は屈折部である。In the figure, l is an electrode terminal with a bump structure, 2 is a wiring conductor, 3 is a lead-out part of the electrode terminal l to the wiring conductor 2,
4 is a refracting section.
第１実施例のうち第１図（ａ）では引き出し部３が直線
形状となっていて、屈折部が形成されていない、そのた
めに電極端子１と外部リード線との接続時に熱による応
力が発生しない。In the first embodiment, in FIG. 1(a), the lead-out portion 3 has a straight shape and no bent portion is formed. Therefore, stress due to heat occurs when the electrode terminal 1 is connected to the external lead wire. do not.
同＠（ｂ）では、屈折部４が形成されているが、この屈
折部４は引き出し部３にはなく配線導体２の接続時の熱
の影響を受けない領域に設けであるので、電極端子ｌに
は外部リード線との接続時に熱による応力が発生するこ
とがない。In the same @ (b), the bent part 4 is formed, but since this bent part 4 is not provided in the lead-out part 3 but in an area that is not affected by heat when connecting the wiring conductor 2, the electrode terminal There is no stress caused by heat during connection with external lead wires.
次に、第２図に図示した本発明の第２実施例を説明゛す
る。Next, a second embodiment of the present invention illustrated in FIG. 2 will be described.
第２実施例においては、電極端子ｌの配線導体２への引
き出し部３がなだらかな曲線形状で形成されていて、屈
折部をなくしたものである。In the second embodiment, the lead-out portion 3 of the electrode terminal 1 to the wiring conductor 2 is formed in a gently curved shape and has no bent portion.
以上説明したように１本発明の半導体装置の電極端子構
造は、電極端子であるバンプと内部素子とを結ぶ配線導
体の引き出し部に屈折角がないように形成したので、バ
ンプに外部リード線を熱圧着で接続したときに、熱応力
は生じないで、単に機械圧力に対する応力が発生するだ
けで、電極端子低部の基板にクラックの発生を防止でき
るという優れた効果がある。特に、半導体装置の電極端
子数が増大する程その効果は高くなる。As explained above, the electrode terminal structure of the semiconductor device of the present invention is formed so that there is no bending angle in the lead-out portion of the wiring conductor that connects the bump, which is the electrode terminal, and the internal element. When the connection is made by thermocompression bonding, no thermal stress is generated, and only stress due to mechanical pressure is generated, which has the excellent effect of preventing the occurrence of cracks in the substrate at the bottom of the electrode terminal. In particular, the effect increases as the number of electrode terminals of the semiconductor device increases.
第１図・第２図は本発明の第１実施例拳第２実施例の電
極端子構造の平面図、第３図は従来例の電極端子構造の
平面図である。
ｌ・・・電極端子、
２・・・配線導体、
３・・・（電極端子の配線導体への）引き出し部。
４・・・屈折部。
特許出願人 日本電気株式会社
代理人 弁理士 内 原 音
片１図 第２図
（ａ １ ｔ ｂ）
第３因1 and 2 are plan views of an electrode terminal structure according to a first embodiment of the present invention and a second embodiment, and FIG. 3 is a plan view of a conventional electrode terminal structure. 1... Electrode terminal, 2... Wiring conductor, 3... Extraction part (from electrode terminal to wiring conductor). 4... Refraction section. Patent Applicant NEC Corporation Agent Patent Attorney Uchihara Sound Piece 1 Figure 2 (a 1 t b) 3rd cause
Claims (1)
の電極端子を有する半導体装置において、前記電極端子
と内部素子とを結ぶ配線導体が、屈折角がないように前
記電極端子から引出されていることを特徴とする半導体
装置の電極端子構造。In a semiconductor device having a bump-structured electrode terminal to which an external lead is connected by thermocompression bonding means, a wiring conductor connecting the electrode terminal and an internal element is drawn out from the electrode terminal so that there is no bending angle. Characteristic electrode terminal structure of semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27081087A JPH01111355A (en) | 1987-10-26 | 1987-10-26 | Structure of electrode termianl of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27081087A JPH01111355A (en) | 1987-10-26 | 1987-10-26 | Structure of electrode termianl of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01111355A true JPH01111355A (en) | 1989-04-28 |
Family
ID=17491332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27081087A Pending JPH01111355A (en) | 1987-10-26 | 1987-10-26 | Structure of electrode termianl of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01111355A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03266747A (en) * | 1990-03-14 | 1991-11-27 | Daifuku Co Ltd | Car washing facility |
-
1987
- 1987-10-26 JP JP27081087A patent/JPH01111355A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03266747A (en) * | 1990-03-14 | 1991-11-27 | Daifuku Co Ltd | Car washing facility |
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